HY6264A Search Results

Contextual Info: HY6264A Series •HYUNDAI 8Kx 8-bit CMOS SRAM DESCRIPTION The HY6264A is a high-speed, low power and 8,192 x 8-bits CM O S static RAM fabricated using Hyundai’s high performance twin tub CM O S process technology. This high reliability process coupled with innovative circuit

HY6264Alj-70

Abstract: hy6264a HY6264ALP-70
Contextual Info: HY6264A-0 Series • • H Y U N D A I 8Kx8bit CM OS SRAM DESCRIPTION FEATURES The HY6264A/ HY6264A-I is a high-speed, low power and 8,192x8-bits CMOS static RAM fabricated using Hyundai's high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit

LD33

Abstract: ld33 c LD33 F LD33 V HY6264ALP70 LD33 e LD33 voltage 1DB01 HY6264ALJ-70 Hy6264alp-70
Contextual Info: HY6264A Series ‘H YU N D AI 8 K x 8-bit CMOS SRAM DESCRIPTION The HY6264A is a high-speed, low power and 8,192 x 8-bits C M O S static R A M fabricated using Hyundai's high performance twin tub C M O S process technology. This high reliability process coupled with innovative circuit

HY6264A

Abstract: HY6264A-I HY6264ALP-70 HY6264ALP HY6264AJ HY6264ALLP HY6264AP Hyundai Semiconductor HY6264A HY6264AL
Contextual Info: HY6264A- I Series 8Kx8bit CMOS SRAM FEATURES DESCRIPTION The HY6264A/ HY6264A-I is a high-speed, low power and 8,192x8-bits CMOS static RAM fabricated using Hyundai's high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit

Contextual Info: HY6264A-I Series •HYUNDAI 8K X 8-bit CMOS SRAM DESCRIPTION The HY6264A-I is a high-speed, low power and 8,192 x 8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit

Contextual Info: HY6264A-0 Series • ' H Y U N D A I 8Kx8bit CMOS SRAM DESCRIPTION FEATURES The HY6264A/ HY6264A-I is a high-speed, low power and 8,192x8-bits CMOS static RAM fabricated using Hyundai's high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit

Contextual Info: HY6264A- I Seríes -HYUNDAI 8Kx8bit CMOS SRAM DESCRIPTION FEATURES The HY6264A/ HY6264A-I is a high-speed, low power and 8,192x8-bits C M O S static R A M fabricated using Hyundai's high performance twin tub C M O S process technology. This high reliability

TC551001a

Abstract: CXK584000 Fujitsu FLL 100 SRM2264 cxk58527 uPD434000 lh5168 km6264 M5M51008 SRM20256
Contextual Info: 8K X 8 HYUNDAI MITSUBISHI MOSEL S-MOS SAMSUNG SHARP SONY TOSHIBA 32K X HY6264A M5M5165P MS6264 SRM2264 KM6264 LH5168 CXK5864B TC5565 70/85/100/120 70/100/120/150 70/100 100/120 70/100/120 80/100 70/100 100/120/150 P-## P-## L-##PC LC-## A-##P -##L P-## ALP-##

HV6264A

Abstract: hy6264a A12CE I0530
Contextual Info: HY6264A Series ••H Y U N D A I 8K x 8-bit CMOS SRAM DESCRIPTION The HY6264A is a high-speed, low power and 8,192 x 8-bits CMOS static RAM fabricated using Hyundai's high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit

Contextual Info: HY6264A Series ‘HYUNDAI 8K x 8-bit CMOS SRAM DESCRIPTION The HY6264A is a high-speed, low power and 8,192 x 8-bits CMOS static RAM fabricated using Hyundai's high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit

HY6264ALP-70

Abstract: HY6264A HY6264ALP HY6264ALJ-70 Hyundai Semiconductor HY6264A HY6264AJ HY6264ALLP HY6264AP
Contextual Info: HY6264A Series 8Kx8bit CMOS SRAM DESCRIPTION minimize current drain is unnecessary for the HY6264A Series. The HY6264A is a high-speed, low power and 8,192x8-bits CMOS static RAM fabricated using Hyundai's high performance twin tub CMOS process technology. This high reliability process

NCC 5551

Abstract: SS LSE 0530 HY6264AL ZT 5551 y626
Contextual Info: HY6264A-I Series •HYUNDAI 8K X CMOS SRAM 8 -b it DESCRIPTION The H Y 6 26 4A -I is a high-speed, low power and 8,192 x 8-bits C M O S static R A M fabricated using H yundai's high performance twin tub C M O S pro cess technology. This high reliability pro cess coupled with innovative circuit

HY628400LLG

Abstract: HY628400LG-I HY628400LLP 8K*8 sram 52-PIN
Contextual Info: •HYU N DAI QUICK REFERENCE SRAM ORGANIZATION 64K bit 8Kx8 256K bit (32Kx8) 6 PART NUMBER SPEED(ns) FEATURES HY6264AP HY6264ALP HY6264ALLP HY6264AJ HY6264ALJ HY6264ALLJ 70/85/100/120 70/85/100/120 70/85/100/120 70/85/100/120 70/85/100/120 70/85/100/120

Contextual Info: H Y 6264 A-I S e r ie s •HYUNDAI 8Kx 8-bit CMOS SRAM DESCRIPTION Tiie HY6264A-I is a high-speed, low power and 8,192 x 8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit

HY628400LG-I

Abstract: HY62U16100LLR2-I HY62U256
Contextual Info: QUICK REFERENCE GUIDE •HYUNDAI SRAM QUICK REFERENCE Org. 64K bit 8Kx 8 256K bit (32Kx 8) PART NUMBER HY6264AP HY6264ALP HY6264ALLP HY6264AJ HY6264ALJ HY6264ALLJ HY6264ALP-I HY6264ALLP-I HY6264ALJ-I HY6264ALLJ-I HY62256AP HY62256ALP HY62256ALLP HY62256AJ

8s100

Abstract: HY62U16100LLR2-I HY62U256
Contextual Info: -HYUNDAI QUICK REFERENCE GUIDE SRAM QUICK REFERENCE MODE VOLT. ORGAN. PART NO. <V HY6264AP 70/85/100 70/85/100 L-PART 28PIN PDIP HY6264ALLP 70/85/100 LL-PART 28PIN PDIP HY6264AJ 70/85/100 HY6264ALJ HY6264ALLJ 70/85/100 70/85/100 L-PART LL-PART HY6264ALP-I

HY6284A

Contextual Info: •HYUNDAI H Y 6 2 6 4 A - i 8Kx8bit CMOS SRAM DESCRIPTION FEATURES The HY6264A/ HY6264A-I is a high-speed, low power and 8,192x8-bits CMOS static RAM fabricated using Hyundai's high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit

hy6264a

Abstract: HY6264ALJ
Contextual Info: HYUNDAI HY6264A Series SEMICONDUCTOR 8Kx 8-bit CMOS SRAM DESCRIPTION The HY6264A is a hig h-speed low power, 8,192 x 8-bits CMOS static RAM fabricated using a twin tub CMOS process technology. This high reliability process coupled with innovative circuit design techniques, yields maximum access

PACKAGE-600MIL

Abstract: 8KX8-Bit CMOS SRAM 192x8
Contextual Info: HYUNDAI ELECTRONICS sie t> m a s o f i a 0001157 bse h h y n k •H yundai SEMICONDUCTOR HY6264A 8KX8-Bit C M O S SRAM M261201B-MAY92 DESCRIPTION FEATURES The HY6264A is a high speed, low power 8,192 words by 8-bit CMOS, static RAM fabrica­ ted using a twin tub CMOS process technolo­

hy6264

Contextual Info: HY6264A-I Series •{HYUNDAI 8 K x 8-bit CMOS SRAM DESCRIPTION The HY6264A-I is a high-speed, low power and 8,192 x 8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit

TMS44C256

Abstract: HY6116 CROSS REFERENCE sram mcm6264 ZMD cross reference SIMTEK cross reference HM50464 soj28 sop28 HM65664A HM6116 oki cross
Contextual Info: ZMD Cross Reference List Density Organization Store Type 4Kbit 512 x 8 HardStore 16Kbit 2K x 8 CapStore PowerStore HardStore SoftStore PowerStore PowerStore 64Kbit 8K x 8 CapStore HardStore SoftStore PowerStore PowerStore 256Kbit 32K x 8 CapStore SoftStore

35XL

Contextual Info: •HYUNDAI ORDERING INFORMATION SRAM HY XX X X XX JOM X m HYUNDAI HY : Memory Products XX- IN X TEMR BLANK Q - 70" C - 4 0 - B5'C I PRODUCT GROUP 52 : Slow SRAM* 63 : Fast SHAM 57 : Sync. SHAM POWER SUPPLY :5.0V BLANK : 3.3V/3.DV V PROCESS : CM OS BLANK B

HY62256A

Abstract: hyundai HY62256AJ55
Contextual Info: HY62256A Series • H Y U N D A I 32Kx 8-bit CMOS SRAM DESCRIPTION The HY62256A is a high-speed, low power and 32,768 x 8-bits CMOS static RAM fabricated using Hyundai's high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit

920c5

Abstract: HY6264A-10 HY6264A 4A-10 HY6264A-12 HY6264A-15 HY6264A-70 HY6264A-85 C0553
Contextual Info: HYUNDA SEMICONDUCTO 8KX 8-Bit CMOS SRAM M261201B-MAY92 DESCRIPTION FEATURES The H Y6264A is a high speed, low power 8,192 words by 8-bit CMOS static RAM fabrica­ ted using a twin tub CMOS process technolo­ gy. This high reliability process coupled with innovative circuit design techniques, yields