00Q3B Search Results

tp5950

Contextual Info: SPR AGU E/ SE MIC ON D GROUP 8 5 1 4 0 1 9 SPRAGUE, T3 D • 0513350 00Q3b01 S E M I C O N D S / ICS h M 93D 03601 J> 7 ^ ^ -Z .S - PLAST1C-CASE JUNCTION FIELD-EFFECT TRANSISTORS N-Channel JFETs ELECTRICAL CHARACTERISTICS al TA = 25°C VgS oH V(BRJGSS Limits

2N5485

Abstract: TP5668 NJ132 NJ16 TP4858A TP4859 TP4859A TP4860 TP4860A TP4861
Contextual Info: SPRAGUE/SEMICOND GROUP 8514019 SPRAGUE, T3 D • 0513350 00Q3b01 SE MI C ON DS /ICS 93D 03601 h M J> 7 ^ ^ -Z .S PLAST1C-CASE JUNCTION FIELD-EFFECT TRANSISTORS N-Channel JFETs ELECTRICAL CHARACTERISTICS al TA = 25°C VgS oH V(BRJGSS Limits Igss Min. (V) IG

Contextual Info: 00Q3bb2 IbO « X IC SEE D • XICOR INC 1M Kaan; 128K x 8 Bit X28C 010 5 Volt, Byte Alterable E2PROM ■ p A io - \s - z n D E S C R IP T IO N FEATURES 1Access Time: 120 ns 1SIMPLE Byte and Page Write — Single 5 Volt Supply — No External High Voltages or Vpp Control

MBM27C2000-15

Abstract: Fujitsu Ltd MBM27C2000
Contextual Info: FUJITSU LTD S3E D 374^7Sh D0a3bSb Ô5Ô W F C A J June 1992 Edition 1.0 FUJITSU DATA SHEET MBM27C2000 -12/-15 CMOS 2M-BIT UV EPROM CMOS 2,097,152-BIT UV ERASABLE READ ONLY MEMORY EPROM The Fujitsu MBM27C2000 EPROM is a high speed read-only static memory that is

DCM4 SMD

Contextual Info: ELH0101/883/8508901/2YX ELH0101/883/8508901/2YX hi:- ph’h-wkem jî •'tevi:. 1'»■.- P0W fT (JpCFQtiOTlttI A. TtipllfiCT F eatu res G eneral D escrip tion • 5A peak, 2A continuous o u tp u t cu rren t • 10 V /jas slew rate • 300 kH z pow er bandw idth

2SC4234

Contextual Info: H F X series Switching Power Transistor 2SC4234 3a TP3V80HFX (NPN) • Î O utline Dimensions 6 Absol ut e Maximum Ratings JS s IE n Sym bol Item ft f* C onditions « T s tg S to ra g e T e m pe ratu re « -g -s c s a « J u n c tio n T e m pe ratu re 3 1 /? ? • ^ —

Contextual Info: pMC-Sierra, Inc. PM7323 RCMP-200 P r e l im in a r y I n f o r m a t io n is su e 1 ROUTING CONTROL, MONITORING AND POUCING 200 Mbps FEA TU R ES • Monolithic single chip device which handles ATM switch Ingress VPI/VCI address translation, cell appending, cell rate policing, counting, and OAM requirements

Contextual Info: MOSEL VITEUC V 53C 404D H IG H P E R F O R M A N C E , L O W P O W E R 1 M X 4 B IT F A S T P A G E M O D E C M O S D Y N A M IC R A M HIGH PERFORMANCE V53C404D 60 70 80 10 Max. RAS Access Time, tRAC 60 ns 70 ns 80 ns 100 ns Max. Column Address Access Time, (tCAA)

Contextual Info: September 1994 MiL Micro Linear PREL,M ,N ARY ^ ML6672 ATM UTP Transceiver GENERAL DESCRIPTION The M L6672 is a complete monolithic transceiver for 155Mbps NRZ encoded data transmission over Category 5 Unshielded Twisted Pair and Shielded Twisted Pair cables.

Contextual Info: HY62256A Series •HYUNDAI 32K X 8-blt CMOS SRAM DESCRIPTION The HY62256A is a high-speed, low power and 32,768 x 8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit

Contextual Info: EPSON _ SED1530 Series Dot Matrix LCD Controller Driver • Ultra Low Power Consumption • Built-in Power Supply Circuit for LCD • 133 Driver Output • DESCRIPTION The SED 1530 series is a single-chip LCD driver for dot-m atrix liquid crystal displays LC D’s which is directly

Contextual Info: VOLTAGE REGULATORS NEGATIVE, 3 TERMINAL, ARRANGED BY OUTPUT VOLTAGE Regulated Voltage Out ±5% Volts NTE Type Number Case Style Vout -5V -5V -5V -5V -6V -6V -8V -8V -9V -12V -12V -12 V -12V -15 V -15V -15V -15V -18V -18 V -18 V -18V -24V -24V -24V -24V 961

2a6597

Abstract: TOKO 455KHz ceramic filter SCB-1320Z Ceramic filter 455khz L17D*m NE606DK NE605 SA606 NE606 Signetics SA606DK
Contextual Info: Philips Semiconductors Product specification Low-voltage high performance mixer FM IF system SA606 DESC R IPTIO N PIN C O NFIGU RATIO N The SA606 is a low-voltage high performance monolithic FM IF system incorporating a mixer/oscillator, two limiting intermediate

L66C

Abstract: C1f TRANSISTOR ECG906 transistor HJ 388 MAC15
Contextual Info: E C G INC PHILIPS 17 E D • bL.S3‘iSfl O D O a S T I ECG906 DUAL HIGH-FREQUENCY DIFFERENTIAL AMPLIFIER semiconductors For Low-Power Applications at Frequencies up to 500 MHz •32O 0 - ^ ECG906 conilsts o f two Independent differential amplifiers w ith associated constant-current tran­

Contextual Info: g C 3 Ä T E L M x -850 Precision, Higher-Speed 4-Channel, Analog Multiplexers IN NO V ATION a n d E X C E L L E N C E FEATURES • • • • • • 50ns settling time to ±0.01% 70ns settling time to ±0.003% 100ns settling time to ±0.001% 4 Channels, single-ended inputs

2SC4237

Contextual Info: H FX series Switching Power Transistor Outline Dimensions 1 0 a 2SC 4237 T10W80HFX (NPN) •IÊ$£JR:£:5Ëfë m Absolute Maximum Ratings Item g ie Junction Temperature 9 • x m i± Collector to Base Voltage □ U7 ? •x J 7 ? Collector to Emitter Voltage

Contextual Info: P r e l im in a r y I n f o r m a t io n PMC PMC-Sierra, Inc. PM6344 EQUAD QUAD E1 FRAMER ISSUE 3 FEA TU R ES • Integrates four full-featured E1 framers and transmitters in a single device for terminating duplex E1 signals. • Software and functionally compatible with the PM6341 E1XC Single E1

G5214

Contextual Info: SEMICONDUCTOR CORPORATION Data Sheet Photodetector/Transimpedance Amplifier VSC7810 Family for Optical Communication Features • Integrated Photodetector/Transimpedance Amplifier Optimized for High Speed Optical Communications Applications • High Bandwidth

Contextual Info: H Y 6264 A-I S e r ie s •HYUNDAI 8Kx 8-bit CMOS SRAM DESCRIPTION Tiie HY6264A-I is a high-speed, low power and 8,192 x 8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit

Contextual Info: QIXYS IGBT with Diode IXSN 52N60AU1 VCES I C25 vCE sat Combi Pack = 600 V = 80 A = 3V Short Circuit SOA Capability Maximum Ratings Symbol Test Conditions V CES Tj = 25°C to 150°C 600 V v CGR T, = 25°C to 150°C; RGE = 1 Mi2 600 A V GES Continuous +20 V

SC902-2

Contextual Info: SC902-2 1.0A <s I l o w l o s s s u p e r h ig h s p e e d r e c t i f i e r Outline Drawing 3ta* / * 3» i 43 I d—k > CM ÜÜ4 p 135t(M H Features • • • • 2 ML 1 _,+a* 5.1-ai L35±0* 1 1 121“ Connection Diagram Surface mount device Lo w V f

Contextual Info: WEITEK Â VIDEO POWER DATA BOOK a PRELIMINARY DATA February 28, 1994_ W EITEK’s Video Power is a video copro­ cessor th at m akes TV-quality digital video possible on desktop PC’s running Video for W indow s, and in other GUI-based multim edia environm ents. Unlike unaccelerated

HZK 219

Abstract: HA 16 Sti S.B 1-16 PM7323 SDr31 SCR 131- 6 WJ 59
Contextual Info: • " 1 ^ — ISSUE 1 PMC-Sierra, Inc. PM7323 RCMP-200 ROUTING CONTROL, MONITORING AND POUCING 200 Mbps FEATURES • Monolithic single chip device which handles ATM switch Ingress VPI/VCI address translation, cell appending, cell rate policing, counting, and OAM requirements

Contextual Info: QS6611 Preliminary Data Sheet Rev. 3.4 Q QS6611 lO/lOOBaseTX Symbol Transceiver Quality Semiconductor Inc. Preliminary Data Sheet Rev. 3.4 October 1996 DISTINCTIVE FEATURES • Low power all-CMOS design with Icc <120 mA for lOBaseT, Icc <100 mA for 100BaseT