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    BU 3150

    Abstract: No abstract text available
    Text: HY62UF8400A/ HY62QF8400A/ HY62SF8400A/ Series 512Kx8bit full CMOS SRAM FEATURES DESCRIPTION • Fully static operation and Tri-state output • TTL compatible inputs and outputs • Battery backup LL/SL-part - 1.2V(min) data retention • Standard pin configuration


    Original     		PDF HY62UF8400A/ HY62QF8400A/ HY62SF8400A/ 512Kx8bit 48ball HY62UF8400A HY62QF8400A HY62EF8400A HY62SF8400A HY62UF8400A BU 3150

    Untitled

    Abstract: No abstract text available
    Text: HY62QF8400A Series 512Kx8bit full CMOS SRAM DESCRIPTION FEATURES The HY62QF8400A is a high speed, super low power and 4Mbit full CMOS SRAM organized as 512K words by 8bits. The HY62QF8400A uses high performance full CMOS process technology and is designed for high speed and low power


    Original     		PDF HY62QF8400A 512Kx8bit 36-ball 36ball 5M-1994.

    Untitled

    Abstract: No abstract text available
    Text: HY62UF8400A/ HY62QF8400A/ HY62EF8400A/ HY62SF8400A Series 512Kx8bit full CMOS SRAM PRELIMINARY FEATURES DESCRIPTION • Fully static operation and Tri-state output • TTL compatible inputs and outputs • Battery backup LL/SL-part - 1.5V(min) data retention


    Original     		PDF HY62UF8400A/ HY62QF8400A/ HY62EF8400A/ HY62SF8400A 512Kx8bit HY62UF8400A HY62QF8400A HY62EF8400A