HYMD564M646C
Abstract: No abstract text available
Text: HYMD564M646C P 6-D43/J/K/H SERIAL PRESENCE DETECT Rev. 0.0 -D43 Byte Function described Function support Number of Bytes written into serial memory at module manufacturer 128 Bytes 1 Total Number of Bytes in SPD device 256 Bytes 2 Fundmetal Memory Type DDR SDRAM
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HYMD564M646C
6-D43/J/K/H
B27592
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Untitled
Abstract: No abstract text available
Text: 200pin DDR SDRAM SO-DIMMs based on 512Mb C ver. TSOP This Hynix unbuffered Small Outline, Dual In-Line Memory Module (DIMM) series consists of 512Mb C ver. DDR SDRAMs in 400mil TSOP II packages on a 200pin glass-epoxy substrate. This Hynix 512Mb C ver. based unbuffered
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200pin
512Mb
400mil
200-pin
DDR400,
512MB,
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Untitled
Abstract: No abstract text available
Text: 200pin DDR SDRAM SO-DIMMs based on 512Mb C ver. TSOP This Hynix unbuffered Small Outline, Dual In-Line Memory Module (DIMM) series consists of 512Mb C ver. DDR SDRAMs in 400mil TSOP II packages on a 200pin glass-epoxy substrate. This Hynix 512Mb C ver. based unbuffered
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PDF
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200pin
512Mb
400mil
200-pin
DDR400,
512MB,
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HYMP512S64CP8-Y5
Abstract: HYMP564S64CP6-Y5 H5TQ1G63BFR-H9C h5ps2g83afr-s6c H5PS1G63EFR-Y5C H5TQ1G83BFR-H9C HYMP564S64CP6-C4 HY5PS121621Cfp-y5 H5PS1G63EFR-S5C HY5PS12821CFP-Y5
Text: Q3’2009 Databook C omputing Memory DDR3 SDRAM : Component VDD DENSITY ORG. SPEED PART NUMBER PKG. FEATURE AVAIL. 1.5V 1Gb 256Mx4 DDR3 1333 H5TQ1G43AFP-H9C FBGA 78ball 8Bank, 1.5V, CL9,9-9-9 Now H5TQ1G43BFR-H9C FBGA(78ball) 8Bank, 1.5V, CL9,9-9-9 Now H5TQ1G43TFR-H9C
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256Mx4
H5TQ1G43AFP-H9C
78ball)
H5TQ1G43BFR-H9C
H5TQ1G43TFR-H9C
H5TQ1G43AFP-G7C
H5TQ1G43BFR-G7C
HYMP512S64CP8-Y5
HYMP564S64CP6-Y5
H5TQ1G63BFR-H9C
h5ps2g83afr-s6c
H5PS1G63EFR-Y5C
H5TQ1G83BFR-H9C
HYMP564S64CP6-C4
HY5PS121621Cfp-y5
H5PS1G63EFR-S5C
HY5PS12821CFP-Y5
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Untitled
Abstract: No abstract text available
Text: 200pin DDR SDRAM SO-DIMMs based on 512Mb C ver. TSOP This Hynix unbuffered Small Outline, Dual In-Line Memory Module (DIMM) series consists of 512Mb C ver. DDR SDRAMs in 400mil TSOP II packages on a 200pin glass-epoxy substrate. This Hynix 512Mb C ver. based unbuffered
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Original
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PDF
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200pin
512Mb
400mil
200-pin
DDR400,
DDR333
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HYMD564M646C
Abstract: d431 DDR266 DDR266B DDR333 DDR400 DDR400B HYMD532M646C hynix ddr hynix ddr sdram
Text: 200pin DDR SDRAM SO-DIMMs based on 512Mb C ver. TSOP This Hynix unbuffered Small Outline, Dual In-Line Memory Module (DIMM) series consists of 512Mb C ver. DDR SDRAMs in 400mil TSOP II packages on a 200pin glass-epoxy substrate. This Hynix 512Mb C ver. based unbuffered
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Original
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PDF
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200pin
512Mb
400mil
200-pin
DDR400,
DDR333
HYMD564M646C
d431
DDR266
DDR266B
DDR400
DDR400B
HYMD532M646C
hynix ddr
hynix ddr sdram
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