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    IBM0116405P Search Results

    IBM0116405P Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IBM0116405PJ1-50 IBM DRAM Chip, EDO DRAM, 2MByte, 3.3V Supply, Commercial, SOJ, 26-Pin Original PDF
    IBM0116405PJ1-60 IBM DRAM Chip, EDO DRAM, 2MByte, 3.3V Supply, Commercial, SOJ, 26-Pin Original PDF
    IBM0116405PJ1-70 IBM DRAM Original PDF
    IBM0116405PT1-50 IBM DRAM Chip, EDO DRAM, 2MByte, 3.3V Supply, Commercial, TSOP II, 26-Pin Original PDF
    IBM0116405PT1-60 IBM DRAM Chip, EDO DRAM, 2MByte, 3.3V Supply, Commercial, TSOP II, 26-Pin Original PDF
    IBM0116405PT1-70 IBM DRAM Original PDF

    IBM0116405P Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    IBM01164054M

    Abstract: IBM0116405B4M IBM0116405M4M IBM0116405P4M
    Text: IBM01164054M x 412/10, 5.0V, EDO. IBM0116405P4M x 412/10, 3.3V, EDO, LP, SR. IBM0116405M4M x 412/10, 5.0V, EDO, LP, SR. IBM0116405B4M x 412/10, 3.3V, EDO. IBM0116405 IBM0116405M IBM0116405B IBM0116405P 4M x 4 12/10 EDO DRAM Features • 4,194,304 word by 4 bit organization


    Original     		IBM01164054M IBM0116405P4M IBM0116405M4M IBM0116405B4M IBM0116405 IBM0116405M IBM0116405B IBM0116405P PDF

    IBM01164054M

    Abstract: IBM0116405B4M IBM0116405M4M IBM0116405P4M ibm0116
    Text: IBM01164054M x 412/10, 5.0V, EDO. IBM0116405P4M x 412/10, 3.3V, EDO, LP, SR. IBM0116405M4M x 412/10, 5.0V, EDO, LP, SR. IBM0116405B4M x 412/10, 3.3V, EDO. IBM0116405 IBM0116405M IBM0116405B IBM0116405P 4M x 4 12/10 EDO DRAM Features • 4,194,304 word by 4 bit organization


    Original     		IBM01164054M IBM0116405P4M IBM0116405M4M IBM0116405B4M IBM0116405 IBM0116405M IBM0116405B IBM0116405P ibm0116 PDF

    IBM01164054M

    Abstract: IBM0116405B4M IBM0116405M4M IBM0116405P4M
    Text: IBM01164054M x 412/10, 5.0V, EDO. IBM0116405P4M x 412/10, 3.3V, EDO, LP, SR. IBM0116405M4M x 412/10, 5.0V, EDO, LP, SR. IBM0116405B4M x 412/10, 3.3V, EDO. IBM0116405 IBM0116405M IBM0116405B IBM0116405P 4M x 4 12/10 EDO DRAM Features • 4,194,304 word by 4 bit organization


    Original     		IBM01164054M IBM0116405P4M IBM0116405M4M IBM0116405B4M IBM0116405 IBM0116405M IBM0116405B IBM0116405P PDF

    Untitled

    Abstract: No abstract text available
    Text: Discontinued 9/98 - last order; 3/99 last ship IBM01164054M x 412/10, 5.0V, EDOMMDD62DSU-001015231. IBM0116405P4M x 412/10, 3.3V, EDO, LP, SRMMDD62DSU-001015231. IBM0116405M4M x 412/10, 5.0V, EDO, LP, SRMMDD62DSU-001015231. IBM0116405B4M x 412/10, 3.3V, EDOMMDD62DSU-001015231.


    Original     		IBM01164054M EDOMMDD62DSU-001015231. IBM0116405P4M SRMMDD62DSU-001015231. IBM0116405M4M IBM0116405B4M IBM0116405 IBM0116405M PDF

    2m x 32 SRAM SIMM

    Abstract: IBM11M4735CB SIMM 72 IBM0116400M IBM038329P IBM025161L dimm 168
    Text: Table of Contents Index Numbering Guides Part Number Type Org A dd r Voltage IBM0116160 IBM0116160B IBM0116160M IBM0116160P IBM0116165 IBM0116165B IBM0116165M IBM0116165P IBM0116400 IBM0116400B IBM0116400M IBM0116400P IBM0116405 IBM0116405B IBM0116405M IBM0116405P


    Original     		IBM0116160 IBM0116160B IBM0116160M IBM0116160P IBM0116165 IBM0116165B IBM0116165M IBM0116165P IBM0116400 IBM0116400B 2m x 32 SRAM SIMM IBM11M4735CB SIMM 72 IBM0116400M IBM038329P IBM025161L dimm 168 PDF

    64mb edo dram simm

    Abstract: 8Mb SDRAM 5.0v memory 2mb 72-pin simm simm72 IBM11S43 ram 168 pin 8k refresh simm DIMM 72 pin out edo dram 72-pin simm
    Text: Ta ble of C o n te n t s Go To 4Mb DRAM s , V RAMs & SGRAM s Go To 16Mb DRAMs & SDRAMs & 64Mb DRAM s Go To D RAM 72 Pin Mod u l e s Go To D RAM 72 & 144 Pin Small Ou tline Mod u l e s Go To D RAM 168 Pin Mod u l e s Go To Sy n ch ronous SRAM s Go To S RAM Mod u l e s


    Original     		PDF

    IBM025161LG5D60

    Abstract: gm72v16821 MD908 KM48S2020 TC59R1809 GM72V1682 KM4232W259Q60 KM416S1120A IBM025171LG5D-70 KM44S4020AT
    Text: Fujitsu Microelectronics Inc. Hitachi America Ltd. Hyundai Electronics America Inc. IBM Microelectronics LG Semicon America Inc. formerly Goldstar Mitsubishi Electronics America Inc. NEC Electronics Inc. Micron Technology Inc. Mosel Vitelic Inc. MoSys Inc.


    Original     		MB81141621 MB81141622 MB81G8322 MB81116421 TC59R1608 2ns500MHz TC59R0808 IBM025161LG5D60 gm72v16821 MD908 KM48S2020 TC59R1809 GM72V1682 KM4232W259Q60 KM416S1120A IBM025171LG5D-70 KM44S4020AT PDF

    0116405

    Abstract: No abstract text available
    Text: IBM0116405 IBM0116405M IBM0116405B IBM0116405P 4M x 4 12/10 EDO ORAM Features • 4,194,304 word by 4 bit organization • Single 3.3V ± 0.3V or 5.0V ± 0.5V power supply • Standard Power SP and Low Power (LP) • 4096 Refresh Cycles - 64 ms Refresh Rate (SP version)


    OCR Scan     		IBM0116405 IBM0116405M IBM0116405B IBM0116405P 104ns 124ns 200nA 300nA 0116405 PDF

    0116405

    Abstract: No abstract text available
    Text: IBM0116405 IBM0116405M IBM0116405B IBM0116405P 4M x 4 12/10 EDO DRAM Features • 4,194,304 word by 4 bit organization • Single 3.3V + 0.3V or 5.0V + 0.5V power supply • Standard Power SP and Low Power (LP) • 4096 Refresh Cycles - 64 ms Refresh Rate (SP version)


    OCR Scan     		IBM0116405 IBM0116405M IBM0116405B IBM0116405P SA14-4226-06 0116405 PDF

    Untitled

    Abstract: No abstract text available
    Text: IBM0116405 IBM0116405M IBM0116405B IBM0116405P 4M x 4 12/10 EDO DRAM Features • 4,194,304 word by 4 bit organization • Single 3.3V ± 0.3V or 5.0V ± 0.5V power supply • Standard Power SP and Low Power (LP) • 4096 Refresh Cycles - 64 ms Refresh Rate (SP version)


    OCR Scan     		IBM0116405 IBM0116405M IBM0116405B IBM0116405P 200nA 100nA PDF

    Untitled

    Abstract: No abstract text available
    Text: IBM0116405 IBM0116405M IBM0116405B IBM0116405P 4M x 4 12/10 EDO DRAM Features • Low Power Dissipation - Active max - 85mA / 75 mA / 65 mA - Standby: TTL Inputs (max) - 2.0 mA - Standby: CMOS Inputs (max) - 1.0 mA (SP version) - 0.2 mA (LP version) - Self Refresh (LP version only)


    OCR Scan     		IBM0116405 IBM0116405M IBM0116405B IBM0116405P 28H4720 28H4720. 350ns) 28H4720 PDF

    Untitled

    Abstract: No abstract text available
    Text: IBM0116405 IBM0116405M IBM0116405B IBM0116405P 4M x 4 12/10 EDO DRAM Features • Low Power Dissipation - Active max - 90 mA / 75 mA / 65 mA - Standby: TTL Inputs (max) -1.0 mA - Standby: CMOS Inputs (max) - 1.0 mA (SP version) - 0.2 mA (LP version) - Self Refresh (LP version only)


    OCR Scan     		IBM0116405 IBM0116405M IBM0116405B IBM0116405P PDF

    Untitled

    Abstract: No abstract text available
    Text: IBM0116405 IBM0116405M IBM0116405B IBM0116405P 4M x 4 12/10 EDO DRAM Features Low Power Dissipation - Active max - 90 mA / 75 mA / 65 mA - Standby: TTL Inputs (max) - 1 . 0 mA - Standby: C M O S Inputs (max) - 1.0 mA (SP version) - 0.2 mA (LP version) - Self Refresh (LP version only)


    OCR Scan     		IBM0116405 IBM0116405M IBM0116405B IBM0116405P PDF

    Untitled

    Abstract: No abstract text available
    Text: Table of Contents Alphanumeric In d ex . DRAM Numbering . Quality and Reliability. Part Number Oranization . 5 . 7 . 9 Features


    OCR Scan     		IBM014400. IBM014400P. IBM014400M IBM014400B. IBM014405. IBM014405P. IBM0316809C. IBM0316169C. PDF