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    IC PT 2222 Search Results

    IC PT 2222 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MHM411-21 Murata Manufacturing Co Ltd Ionizer Module, 100-120VAC-input, Negative Ion Visit Murata Manufacturing Co Ltd
    SCL3400-D01-1 Murata Manufacturing Co Ltd 2-axis (XY) digital inclinometer Visit Murata Manufacturing Co Ltd
    D1U74T-W-1600-12-HB4AC Murata Manufacturing Co Ltd AC/DC 1600W, Titanium Efficiency, 74 MM , 12V, 12VSB, Inlet C20, Airflow Back to Front, RoHs Visit Murata Manufacturing Co Ltd
    SCC433T-K03-004 Murata Manufacturing Co Ltd 2-Axis Gyro, 3-axis Accelerometer combination sensor Visit Murata Manufacturing Co Ltd
    MRMS591P Murata Manufacturing Co Ltd Magnetic Sensor Visit Murata Manufacturing Co Ltd

    IC PT 2222 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    BEL100N

    Abstract: bel 100n transistor 41 bf BEL100 BEL100N TRANSISTOR transistor BF 245 BEL 167 transistor BEL 100N BEL BF200 BF200 transistor
    Text: Si Device No VCEO Volts mm V cB O Volts mm V ebo Volts mm hFE at bias mm /max Ic mA V ce Volts 1 CM Plot ICBO mA mW uA max max typ V ce Sat Volts typ M Hz Cob Pt- typ typ ÍT ts N ns typ dB typ toff nsec — f Package NPN SWITCHING TRANSISTORS 20. 2N2218


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    2N2218 285max 2N2219A 2N2221A 222STOR BEL100N 2N3500 2N3501 2N3501TV 20min. bel 100n transistor 41 bf BEL100 BEL100N TRANSISTOR transistor BF 245 BEL 167 transistor BEL 100N BEL BF200 BF200 transistor PDF

    ic pt 2223

    Abstract: ic pt 2222 npn 2222 transistor UN2224 UN2221 UN2222 UN2223 DSA003713 Pt 2222
    Text: Transistors with built-in Resistor UN2221/2222/2223/2224 Silicon NPN epitaxial planer transistor 0.65±0.15 1.45 0.95 1.5 –0.05 1 0.95 3 +0.1 0.4 –0.05 +0.2 Costs can be reduced through downsizing of the equipment and reduction of the number of parts.


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    UN2221/2222/2223/2224 ic pt 2223 ic pt 2222 npn 2222 transistor UN2224 UN2221 UN2222 UN2223 DSA003713 Pt 2222 PDF

    ic pt 2223

    Abstract: UNR2223 UNR2221 UNR2222 UNR2224
    Text: Transistors with built-in Resistor UNR2221/2222/2223/2224 UN2221/2222/2223/2224 Silicon NPN epitaxial planer transistor Unit: mm +0.2 2.8 –0.3 +0.25 0.65±0.15 For digital circuits 1.5 –0.05 0.65±0.15 +0.1 +0.2 1.45 3 0.4 –0.05 2.9 –0.05 1 0.95


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    UNR2221/2222/2223/2224 UN2221/2222/2223/2224) ic pt 2223 UNR2223 UNR2221 UNR2222 UNR2224 PDF

    ic pt 2223

    Abstract: ic pt 2222 UN2224 UNR2223 UN2221 UN2222 UN2223 UNR2221 UNR2222 UNR2224
    Text: Transistors with built-in Resistor UNR2221/2222/2223/2224 UN2221/2222/2223/2224 Silicon NPN epitaxial planer transistor Unit : mm 0.40+0.10 –0.05 For digital circuits 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65) • Costs can be reduced through downsizing of the equipment and


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    UNR2221/2222/2223/2224 UN2221/2222/2223/2224) UNR2221 UNR2222 UNR2223 UNR2224 ic pt 2223 ic pt 2222 UN2224 UNR2223 UN2221 UN2222 UN2223 UNR2221 UNR2222 UNR2224 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS SMBT 2907 SMBT 2907 A PNP Silicon Switching Transistors • High DC current gain: 0.1 mA to 500 mA • Low collector-emitter saturation voltage • Complementary types: SMBT 2222, SMBT 2222 A NPN Type Marking Ordering Code (tape and reel) Pin Configuration


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    Q68000-A6501 Q68000-A6474 OT-23 0535bQ5 012S531 235bQ5 D122532 PDF

    2907A

    Abstract: ZT2907A mdpv
    Text: SIEM EN S PNP Silicon Switching Transistors PZT 2907 PZT 2907 A • High DC current gain: 0.1 mA to 500 mA • Low collector-emitter saturation voltage • Complementary types: PZT 2222 N PN PZT 2222 A (NPN) Type Marking Ordering Code (tape and reel) Pin Conf igura ion


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    Q62702-Z2028 Q62702-Z2025 OT-223 2907A ZT2907A mdpv PDF

    2222A

    Abstract: O A B C sot-89 WTM2222A WTM2907A 2222A sot89 transistor 2222a transistor 2222a sot 89
    Text: WTM2222A NPN Epitaxial Planar Transistors SOT-89 P b Lead Pb -Free 1 Features: 1. BASE 2. COLLECTOR 3. EMITTER * Low Collector Saturation Voltage * High Spwwd Switching * For Complementary Use With PNP Type WTM2907A 2 3 ABSOLUTE MAXIMUM RATINGS (TA=25˚C)


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    WTM2222A OT-89 WTM2907A 100ms 06-Apr-06 OT-89 2222A O A B C sot-89 WTM2222A WTM2907A 2222A sot89 transistor 2222a transistor 2222a sot 89 PDF

    2222a

    Abstract: WTM2222A WTM2907A transistor 2222a
    Text: WTM2222A NPN Epitaxial Planar Transistors SOT-89 P b Lead Pb -Free 1 Features: 1. BASE 2. COLLECTOR 3. EMITTER * Low Collector Saturation Voltage * High Speed Switching * For Complementary Use With PNP Type WTM2907A 2 3 ABSOLUTE MAXIMUM RATINGS (TA=25˚C)


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    WTM2222A OT-89 WTM2907A 100ms 06-Apr-06 OT-89 2222a WTM2222A WTM2907A transistor 2222a PDF

    transistor 2222a

    Abstract: k019 2222A transistor M2907A 2222a tm2907 2222A transistors ip 2222A
    Text: SEC SILICON TRANSISTORS ELECTRON DEVICE N T M 2 2 2 2 A ,N T M 2 2 2 2 A R GENERAL PURPOSE AMPLIFIER, HIGH SPEED SW ITCHING NPN SILICON EPITAXIAL TRANSISTOR "M INI MOLD TYPE” DESCRIPTION The N TM 2222A , N TM 2222A R are designed fo r general purpose am p lifie r and high speed sw itching applications, especially


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    t2222

    Abstract: NT2222 NT2222A I/NT2222 NT2907 t2222a ICB01
    Text: NEC NPN SILICON TRANSISTORS NT2222,NT2222A ELECTRON DEVICE GENERAL PU RPO SE A M P L IF IE R A N D H IG H -S P E E D , M E D IU M -P O W E R S W IT C H IN G N P N S IL IC O N E P IT A X IA L T R A N S IS T O R DESCRIPTION The N T2222, N T 2222A are NPN transistors, designed fo r general purpose am plifier and high-speed, mediumpower sw itching applications, feature injection-m olded plastic package fo r high re lia b ility .


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    NT2222 NT2222A T2222, T2907, T2907A T2222A t2222 NT2222A I/NT2222 NT2907 ICB01 PDF

    G2JS

    Abstract: 2SC4550 Immo transistor t 2190 U/25/20/TN26/15/850/G2JS
    Text: ~r — $ • y — h /\°7 - Silicon Power Transistor 2SC4550 N 2 S C 455o iî , i i i i x - f P N I f c - v i - v - r m ÿ X j ' t ' L ow VcE sat Iife i ^ t L v x m T . i l ' J f i ÿ y ì i i i i r t z ' - t v - h \ - 7 7 > ' / X > m ^iO T" D C /D C ^ > /S;'— Ÿ ^?~T y7


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    2SC4550 2SC4550 PWS300 D15596JJ2V0DS00 G2JS Immo transistor t 2190 U/25/20/TN26/15/850/G2JS PDF

    PC7812AHF

    Abstract: PC7805AHF pc7815ahf IC-7983 PC7800 PC7824AHF PC7893AHF PC7805A PC7818AHF
    Text: データ・シート バイポーラアナログ集積回路 Bipolar Analog Integrated Circuit µPC7800Aシリーズ 3端子正出力電圧安定化電源回路 PC7800Aシリーズは,出力電流容量1Aの正出力電圧3端子レギュレータです。


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    PC7800A PC7800A1A PC7800 TA-30 mAPC7805AHF VPC7805AHF PC7808AHF PC7893AHF PC7812AHF PC7805AHF pc7815ahf IC-7983 PC7800 PC7824AHF PC7893AHF PC7805A PC7818AHF PDF

    transistor C017

    Abstract: D1560 transistor t 2190 2SD2164
    Text: データ・シート シリコン・パワー・トランジスタ Silicon Power Transistor 2SD2164 NPN エピタキシアル形シリコン・トランジスタ 低周波電力増幅,低速度スイッチング用 2SD2164 は,hFE が特に高くなるように設計されたシングルの


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    2SD2164 2SD2164 D15606JJ3V0DS transistor C017 D1560 transistor t 2190 PDF

    K68A

    Abstract: a1f4m A1A4M R1Ik N1A4M 2SK104 2SA1138 a1l4m n1f4m 2SD1557
    Text: QUICK REFERENCE GUIDE MINI MOLD SC-59 Q U IC K R E FE R EN C E TA B L E Switching Diodes □ m Leadless Type Q U IC K REFER EN C E TA B LE (Switching Diodes) □ \ ^ V R (V ) GENERAL P UHPO SE 30 50 70 LS53 LS 54 LS 55 LS 953 LS 954 L S 955 100 S IN G L E


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    SC-59 DO-35 SC-63) T0-220AB K68A a1f4m A1A4M R1Ik N1A4M 2SK104 2SA1138 a1l4m n1f4m 2SD1557 PDF

    31-968.24

    Abstract: 22-331.111d 22-040.001 311D 514D 22-223.011 10-5309.3205 31-968.05 Flat Plate power Resistor elements 222120
    Text: Switches and Indicators 22 22 Switches and Indicators Index Series 22 Description Page 369 Product Assembly Page 370 Product Range - pushbuttons for standard mounting - accessories / spare parts 368 01.2000 Page 371 Page 375 Technical Data Page 380 Technical Drawing / Dimension


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    2SC4226

    Abstract: pt 2399 PA810T
    Text: データ・シート(暫定) シリコントランジスタ Silicon Transistor µPA810T NPNエピタキシアル形シリコントランジスタ(2素子内蔵) 高周波低雑音増幅用 2SC4226 2個入り小形ミニモールド PA810Tは,VHF帯からUHF帯での低雑音増幅用として


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    PA810T 2SC4226 PA810TVHFUHF PA810T-T1 2SC4226 pt 2399 PA810T PDF

    transistor 5bw

    Abstract: TRANSISTOR 5DW 5dw transistor 3bw transistor 2SC1009 transistor 3bw 1bw npn NPN2SC2351 nec m nec microwave
    Text: 9. Summarized Characteristics Table 4. Bipolar Transistor« Bipolar Transistors, Field Effect Transistors and Diodes Absolute M aximum Ratings Te*25uC Type No. Structure PNP Epitaxial Package N E C M INI M O L O Regular' Electrical Characteristics Ta«25°C>


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    2SK67 2SK160 transistor 5bw TRANSISTOR 5DW 5dw transistor 3bw transistor 2SC1009 transistor 3bw 1bw npn NPN2SC2351 nec m nec microwave PDF

    2n5088 transistor

    Abstract: SL 100 NPN Transistor 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PA CK A GE D evice b v CEO T y p e @ 1 0 m A - V M in . V CE (sat) E M a x. 2N 3903 2N 3904 2N 3905 2N 3906 2N 4123 NPN NPN PNP PNP NPN 40 40 40 40 30 50 100 50 100 50 15 0 300 150 300 15 0


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    2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4400 2n5088 transistor SL 100 NPN Transistor PDF

    d1499

    Abstract: AA 6026
    Text: データ・シート 複合トランジスタ Compound Transistor FN1F4N 抵抗内蔵PNPエピタキシアル形シリコントランジスタ 中速度スイッチング用 特 徴 外形図(単位:mm) ○バイアス抵抗を内蔵しています。


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    Cycle50 D14992JJ2V0DS002 TC-6026 D14992JJ2V0DS00 d1499 AA 6026 PDF

    Untitled

    Abstract: No abstract text available
    Text: 4 T H IS DRAWING 0 RELEASED FOR P U B L I C A T IO N IS UNPUBLISHED. COPYRIGHT BY AMP INCORPORATED. 19 2 3 ,1 9 LOC DI ST CF ALL RIGHTS RESERVED. REVISIONS 39 DES C RI PT IO N DATE DWN APVD PER NPR 11-20-96 DKE RC 0G80—0 0 3 7 -0 0 1- 2 8 - 0 0 REH REH


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    0G80--0 17105-3b0 amp40989 /home/arfip40989/edmrnod PDF

    K1983

    Abstract: 2SA1129 2SC2654 MP-25 D1485 2sa112
    Text: データ・シート シリコン・パワー・トランジスタ Silicon Power Transistor 2SA1129 PNP エピタキシアル形シリコン・トランジスタ 低周波電力増幅および中速度スイッチング用 工業用 ★ 2SA1129 は,中速度スイッチング用として開発されたモール


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    2SA1129 O-220AB O-220AB) 2SC2654 D14856JJ2V0DS00 TC-5552 October2000 K1983 2SA1129 2SC2654 MP-25 D1485 2sa112 PDF

    transistor 6108

    Abstract: 2SC4342
    Text: データ・シート シリコン・パワー・トランジスタ Silicon Power Transistor 2SC4342 NPN エピタキシアル形シリコン・トランジスタ ダーリントン接続 高速度スイッチング用 工業用 ★ 2SC4342 は,高速タイプのダーリントン・パワー・トランジ


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    2SC4342 O-126 D14862JJ2V0DS00 TD-7566 June2001 D14862JJ2V0DS transistor 6108 2SC4342 PDF

    BLW90

    Abstract: fi37
    Text: bSE ]> El 7110ñSb DDb33ñ7 350 « P H I N BLW90 _ PHILIPS INTERNATIONAL _^ U.H.F. P O W E R T R A N SIST O R N-P-N silicon planar epitaxial transistor suitable for transmitting applications in class-A, B or C in the u.h.f. and v.h.f. range for a nominal supply voltage of 28 V. The transistor is resistance stabilized and


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    BLW90 BLW90 fi37 PDF

    2SB1432

    Abstract: 2SB143
    Text: データ・シート シリコン・パワー・トランジスタ Silicon Power Transistor 2SB1432 PNP エピタキシアル形シリコン・トランジスタ ダーリントン接続 低周波電力増幅,低速度スイッチング用 工業用 ★


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    2SB1432 2SB1432 O-220 O-220) D14859JJ2V0DS00 TD-7620 November2000 2SB143 PDF