Contextual Info: CMOS STATIC RAM 64K 16K x 4-BIT IDT7188S IDT7188L Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • High-speed (equal access and cycle times) — Military: 2 0 /2 5 /3 5 /4 5 /5 5 /7 0 /8 5 n s (m ax.) — Com mercial: 15/2 0 /2 5 /3 5 n s (m ax.)

Contextual Info: CM O S STATIC RAM 64K 1 6 K x 4-BIT I ? 8? IDT7188L FEATURES: DESCRIPTION: • The ID T7188 Is a 6 5 ,5 3 6 -b lt h ig h -s p e e d sta tic RAM orga n ized as 16K x 4. It is fa b rica te d u sin g ID T's h ig h -p erform a n ce, hlghre lla b lllty te c h n o lo g y —C EM O S . T h is state-of-the-art tech n olo gy,

7188L35

Abstract: IDT7188 IDT7188L IDT7188S 2989
Contextual Info: IDT7188S IDT7188L CMOS STATIC RAM 64K 16K x 4-BIT Integrated Device Technology, Inc. FEATURES: • High-speed (equal access and cycle times) — Military: 25/35/45/55/70/85ns (max.) • Low power consumption • Battery backup operation — 2V data retention (L version

2989

Abstract: 7188L70 7188S25
Contextual Info: IDT7188S IDT7188L CMOS Static RAM 64K 16K x 4-Bit Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ innovative circuit design techniques, provides a cost effective approach for memory intensive applications. Access times as fast as 25ns are available. The IDT7188 offers a

Contextual Info: IDT7188S IDT7188L CMOS STATIC RAM 64K 16Kx 4-BIT Integrated Device Technology, Inc. FEATURES: • H igh-speed (equal access and cycle times) — Military: 25 /3 5 /4 5 /5 5 /7 0 /8 5 n s (m ax.) • Low power consumption • Battery backup operation — 2V data retention (L version

IDT7188

Abstract: IDT7188L IDT7188S 7188s20 2989
Contextual Info: IDT7188S IDT7188L CMOS STATIC RAM 64K 16K x 4-BIT Integrated Device Technology, Inc. FEATURES: • High-speed (equal access and cycle times) — Military: 20/25/35/45/55/70/85ns (max.) • Low power consumption • Battery backup operation — 2V data retention (L version

S0244

Contextual Info: INTEGRATE] DEVICE 5ÖE ]> • 4Û ES7 71 DDllS'IS 0b3 M I D T CMOS STATIC RAM 64 K 1 6K x 4-BIT) IDT7188S IDT7188L FEATURES: of-th e -a rt tech nology, com bin ed w ith innovative circuit design • H ig h -sp ee d (e q u a l acc e s s and cycle tim es)

DTM03

Contextual Info: CMOS STATIC RAM 64K 16Kx 4-BIT IDT7188S IDT7188L Integrated Device Technology, Inc. FEATURES: of-the-art technology, combined with innovative c irc u it design techniques, provides a cost effective approach for memory • High-speed (equal access and cycle times)

IDT7188

Abstract: IDT7188L IDT7188S
Contextual Info: IDT7188S IDT7188L CMOS STATIC RAM 64K 16K x 4-BIT Integrated Device Technology, Inc. of-the-art technology, combined with innovative circuit design techniques, provides a cost effective approach for memory intensive applications. Access times as fast as 20ns are available. The IDT7188

Contextual Info: BflE D INTEGRATE» DEVICE • MÔ5S771 DÜGÖ31Ö □ ■ IDT -W 6-2-3-I0 CMOS STATIC RAM 64K 16K x 4-BIT IDT7188S IDT7188L FEATURES: DESCRIPTION: • High-speed (equal access and cycle times) — Military: 20/25/35/45/55/70/85ns (max.) — Commercial: 15/20/25/35ns (max.)

7188s20

Abstract: 7188L 55AC10
Contextual Info: CMOS STATIC RAM 64K 16Kx 4-BIT IDT7188S IDT7188L Integrated D evice T ech n o lo gy, Inc. of-the-art technology, combined with innovative circuit design techniques, provides a cost effective approach for memory intensive applications. Access times as fast as 20ns are available. T h e ID T 7 188

IDT7188

Abstract: IDT7188L IDT7188S 7188 dip 2989
Contextual Info: IDT7188S IDT7188L CMOS Static RAM 64K 16K x 4-Bit Features ◆ ◆ ◆ ◆ ◆ ◆ innovative circuit design techniques, provides a cost effective approach for memory intensive applications. Access times as fast as 25ns are available. The IDT7188 offers a

Contextual Info: CMOS STATIC RAM 64K 16K x 4-BIT IDT7188S IDT7188L Integrated Device T echnology, Inc. FEATURES: of-the-art technology, com bined w ith inno vative circuit design techniques, provides a cost effective ap proach for m em ory intensive applications. A ccess tim e s as fa st as 15ns are available. T h e ID T7188

Contextual Info: CMOS STATIC RAM 64K 16Kx 4-BIT IDT7188S IDT7188L Integrated D evice Technology, Inc. FEATURES: • High-speed (equal access and cycle times) — Military: 25/35/45/55/70/85ns (max.) • Low power consumption • Battery backup operation — 2V data retention (L version

Contextual Info: CMOS STATIC RAM 64K 16Kx 4-BIT IDT7188S IDT7188L Integrated D evice Technology, Inc. of-the-art technology, combined with innovative circuit design techniques, provides a cost effective approach for memory intensive applications. Access tim es as fast as 20ns are available. The IDT7188

2989

Abstract: IDT7188S 7188L70 IDT7188 IDT7188L 7188S25
Contextual Info: CMOS Static RAM 64K 16K x 4-Bit IDT7188S IDT7188L Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ innovative circuit design techniques, provides a cost effective approach for memory intensive applications. Access times as fast as 25ns are available. The IDT7188 offers a

Contextual Info: i: jW 'N I d tj CMOS STATIC RAM 64K 16K x 4-BIT IDT7188S IDT7188L Integrated Device Technology, Inc. FEATURES: techniques, provides a cost effective approach for memory intensive applications. Access times as fast as 25ns are available. The IDT7188 offers areduced power standby mode, Isbi , which is activated

Contextual Info: IDT7188S IDT7188L CMOS STATIC RAM 64K 16K x 4-BIT Integrated Device Technology, Inc. FEATURES: of-th e -a rt tech nology, c om bin ed with in novative circuit design • H ig h -sp ee d (equal a cc e s s and cycle tim es) tech niq ues, provides a cost effective app ro a c h for m em ory

Contextual Info: IDT7188S IDT7188L CMOS STATIC RAM 64K 16K x 4-BIT Integrated Device Technology, Inc. FEATURES: • High-speed (equal access and cycle times) — Military: 25/35/45/55/70/85ns (max.) • Low power consumption • Battery backup operation — 2V data retention (L version

IMS1630

Abstract: HY62256 SGS-Thomson HITACHI HM6116 DALLAS SEMICONDUCTOR Ds1235 MK4503 hm6116 cross UPD4361 SSM7188 MK4501
Contextual Info: CROSS REFERENCE AMD SGS-THOMSON Group DALLAS Semiconductor SGS-THOMSON Group AM2147 IMS1203 DS2009 MK4501/H01 AM2148/9 IMS1223 DS2010 MK45H02 AM2167 IMS1403 DS2011 MK4503/H03 AM2168 IMS1423 or MK41 H68 DS2012 MK45H04 AM9126 MK6116 DS1210 MK48Z02 AM99C68 IMS1423 or MK41 H68

toshiba 32k*8 sram

Abstract: M5M23C100 M5M5265 seeq DQ2816A M5M23C400 MB832001 HITACHI 64k DRAM TC511000 KM41C464 TC51464
Contextual Info: FUNCTION GUIDE MEMORY ICs 3. CROSS REFERENCE GUIDE 3.1 DRAM Density 64 K X 1 256K X 1 X4 1M X X 4M X X 3.2 Mode Org. 1 4 1 4 Samsung Toshiba Hitachi Fujitsu NEC MSM3764 KM4164 Page Okl F. Page KM41C256 TC51256 Nibble KM41C257 TC51257 HM51256 S. Column KM41C258

uPD23C4000

Abstract: 93c46 atmel sony Cross Reference atmel 93c66 HN62404P 93C46L rom at29c010 Hitachi SRAM cross reference x2864a UPD23C2000
Contextual Info: MEMORY ICs CROSS REFERENCE GUIDE 3. C R O S S REFEREN CE GUIDE 3.1 Video RAM Density 256K 512K Feature Minimum Organization 64Kx4 Samsung KM424C64 Minimum 64Kx8 KM428C64 Minimum 256KX4 KM424C256 Micron Hitachi Ti HM53461 2 TMS4461 HM534251 TM S44C250 TC524256A

S443

Abstract: idt71682 s448 16k nmos dynamic ram S447
Contextual Info: C M O S STATIC RAMS 1 6 K 4 K x 4-B IT IDT 71681SA/LA IDT 71682SA/LA Separate Data Inputs and Outputs FEATURES: DESCRIPTION: • Separate data inputs and outputs • IDT71681SA/LA: outputs track inputs during write mode • IDT71682/SA/LA: high impedance outputs during write mode

TCA780

Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G
Contextual Info: Industry Part Number 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP 1N4678.1N4717 1N4728A.1N4761A 1N4933GP 1N4934GP 1N4935GP 1N4936GP