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    IGBT 100A 150V Search Results

    IGBT 100A 150V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    IGBT 100A 150V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1-PACK

    Abstract: GM400S17AL
    Text: SEMICONDUCTOR GM400S17AL TECHNICAL DATA 150V/100A 1-PACK IGBT MODULE Single FEATURES ・IGBT SPT Technology ・Low VCE(SAT) ・Low turn-off loss OUTLINE DRAWING APPLICATION UNIT : mm Unit : mm ・Optimized for high current inverter 108 74 ±0.2 G E C INTERNAL CIRCUIT


    Original     		PDF GM400S17AL 50V/100A 1-PACK GM400S17AL

    MOSFET circuit welding INVERTER

    Abstract: MOSFET welding INVERTER MOSFET welding INVERTER 200A 600V igbt dc to dc buck converter 600V 30A igbt dc to dc buck converter 200v dc motor igbt dc to ac inverter by scr induction heating 600V igbt dc to dc boost converter SCR Inverter
    Text: TM Global Power-Semiconductor Solution Provider A Quick Reference Guide IGBTs ● MOSFET MODULES ● IPMs ● DIP-IPMs ● ACCESSORIES ● DISCRETE THYRISTORS ● DISCRETE RECTIFIERS ● THYRISTOR AND DIODE MODULES ● FAST RECOVERY AND THREE-PHASE DIODE MODULES


    Original     		PDF

    P-Channel mosfet 400v to220

    Abstract: IGBT DRIVE 500V 300A 400V switching transistor 0,3A mosfet forklift Microwave Oven Inverter Control IC apec CT60AM-18B igbt 100a 150v ct60am Transistor Mosfet N-Ch 30V
    Text: APEC '99 Trench-Gate Technology for The Next Generation of MOS Power Devices IEEE, APEC Conference 1999 Eric R. Motto Sr. Application Engineer Powerex Inc. Youngwood PA USA APEC '99 Introduction 1. The Trench Gate Structure, Development History and Advantages


    Original     		PDF CM600HA-5F CM450HA-5F CM350DU-5F CM200TU-5F CT60AM-18B P-Channel mosfet 400v to220 IGBT DRIVE 500V 300A 400V switching transistor 0,3A mosfet forklift Microwave Oven Inverter Control IC apec CT60AM-18B igbt 100a 150v ct60am Transistor Mosfet N-Ch 30V

    Untitled

    Abstract: No abstract text available
    Text: VCES = 300V IC25 = 400A VCE sat ≤ 1.15V IXGN400N30A3 GenX3TM 300V IGBT Ultra-Low-Vsat PT IGBT for up to 10kHz Switching E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		PDF IXGN400N30A3 10kHz OT-227B, E153432 IC110 400N30A3 1-18-08-A

    IXGN400N60A3

    Abstract: 400N30A3 IXGN400N30A3
    Text: IXGN400N30A3 GenX3TM 300V IGBT VCES = 300V IC25 = 400A VCE sat ≤ 1.15V Ultra Low Vsat PT IGBT for up to 10kHz switching E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		PDF IXGN400N30A3 10kHz OT-227B, E153432 IC110 400N30A3 1-18-08-A IXGN400N60A3 IXGN400N30A3

    IXGN400N30A3

    Abstract: Aluminium nitride
    Text: IXGN400N30A3 GenX3TM 300V IGBT Ultra-Low-Vsat PT IGBT for up to 10kHz Switching VCES = 300V IC25 = 400A VCE sat ≤ 1.15V E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		PDF IXGN400N30A3 10kHz OT-227B, E153432 IC110 400N30A3 1-18-08-A IXGN400N30A3 Aluminium nitride

    M57962L

    Abstract: IGBT DRIVER SCHEMATIC chip M57959L IGBT DRIVER SCHEMATIC M57962L MITSUBISHI HYBRID small driver igbt motorola to-220 1N6528 600v 20a IGBT driver IGBT Driver Power Schematic
    Text: MITSUBISHI SEMICONDUCTORS POWER MODULES MOS USING HYBRID GATE DRIVERS AND GATE DRIVE POWER SUPPLIES common mode noise immunity. This feature allows convenient common referencing of high and low side control signals. Mitsubishi IGBT drivers are designed to


    Original     		PDF MJD44H11 MJD45H11 D44VH10 D45VH10 O-220 MJE15030 MJE15031 MJE243 MJE253 M57962L IGBT DRIVER SCHEMATIC chip M57959L IGBT DRIVER SCHEMATIC M57962L MITSUBISHI HYBRID small driver igbt motorola to-220 1N6528 600v 20a IGBT driver IGBT Driver Power Schematic

    IGBT DRIVER SCHEMATIC

    Abstract: IGBT DRIVER SCHEMATIC chip M57962AL m57962l IGBT Driver Power Schematic IGBT DRIVE 50V 300A 600v 20a IGBT driver zener diode 18V 1.5W Mitsubishi Electric IGBT MODULES IGBT 400 amp
    Text: MITSUBISHI SEMICONDUCTORS POWER MODULES MOS USING HYBRID GATE DRIVERS AND GATE DRIVE POWER SUPPLIES 6.0 Using Hybrid Gate Drivers common mode noise immunity. This feature allows convenient common referencing of high and low side control signals. Mitsubishi


    Original     		PDF MJD44H11 D44VH10 MJD45H11 D45VH10 O-220 MJE15030 MJE243 MJE15031 MJE253 IGBT DRIVER SCHEMATIC IGBT DRIVER SCHEMATIC chip M57962AL m57962l IGBT Driver Power Schematic IGBT DRIVE 50V 300A 600v 20a IGBT driver zener diode 18V 1.5W Mitsubishi Electric IGBT MODULES IGBT 400 amp

    50w ultrasonic generator 40khz

    Abstract: igbt welding machine scheme 40KHZ ULTRASONIC CLEANER driver CIRCUIT 600V 300A igbt dc to dc boost converter 48v to 230v inverters circuit diagram 3b0565 e-bike motor controller 5V 100w unipolar STEPPER MOTOR 500w inverter pcb board circuit diagram 48V 500w 3 phase BLDC motor controller
    Text: Efficient Semiconductor Solutions for Motor Control and Drives Applications ] www.infineon.com/motorcontrol] Contents Solutions for Motor Control and Drives 04 Low-Voltage Applications 06 High-Voltage Applications 08 Choosing the right Microcontroller 10


    Original     		PDF 98/2000/XP 6ED003L06 SPD04N50C3 IDT08S60 SPA15N60C3 ICE3B0565 XC886 XC878/XE164 XC800 XC878 50w ultrasonic generator 40khz igbt welding machine scheme 40KHZ ULTRASONIC CLEANER driver CIRCUIT 600V 300A igbt dc to dc boost converter 48v to 230v inverters circuit diagram 3b0565 e-bike motor controller 5V 100w unipolar STEPPER MOTOR 500w inverter pcb board circuit diagram 48V 500w 3 phase BLDC motor controller

    IXGH100N30C3

    Abstract: 100N30 100N30C3
    Text: Preliminary Technical Information GenX3TM 300V IGBT IXGH100N30C3 VCES IC110 VCE sat tfi typ High Speed PT IGBTs for 50-150kHz switching Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 300 V VGES Continuous


    Original     		PDF IXGH100N30C3 IC110 50-150kHz O-247 100N30C3 IXGH100N30C3 100N30

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information GenX3TM 300V IGBT IXGH100N30C3 VCES IC110 VCE sat tfi typ High Speed PT IGBTs for 50-150kHz switching Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 300 V VGES Continuous


    Original     		PDF IXGH100N30C3 IC110 50-150kHz O-247 100N30C3

    GTO thyristor 1200V 50A

    Abstract: scr driving circuit for dc motor MOSFET circuit welding INVERTER SCR Gate Drive 200v dc motor MOSFET welding INVERTER MOSFET welding INVERTER 200A igbt for HIGH POWER induction heating 600V igbt dc to dc buck converter SWITCHING WELDING BY MOSFET igbt circuit for induction melting
    Text: POWEREX 2009:Layout 1 12/31/08 9:18 AM Page 2 Power Semiconductor Solutions 2009 Quick Reference Guide ● IGBTs ● MOSFET MODULES ● IPMs ● ● DIPIPM ● ● ● ACCESSORIES ● DISCRETE THYRISTORS ● DISCRETE RECTIFIERS ● THYRISTOR AND DIODE MODULES


    Original     		PDF

    half bridge converter 2kw

    Abstract: 5kw 20khz diagram induction heating 66a hall sensor TLE4209A XMC4700 ISO26262 1ED020112f TLE7183QU TLE5009 btm7752
    Text: Efficient Semiconductor Solutions for Motor Control and Drives www.infineon.com/motorcontrol Contents Solutions for Motor Control and Drives 04 Low-Voltage Applications 06 High-Voltage Applications 08 Product Families 10 Microcontrollers 10 Low-Voltage Products


    Original     		PDF

    65e9 transistor

    Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
    Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12


    Original     		PDF 1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 65e9 transistor transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note

    200N30PB

    Abstract: IXGH100N30B3 200n3 200n30
    Text: Preliminary Technical Information GenX3TM 300V IGBT VCES = IC110 = VCE sat ≤ tfi(typ) = IXGH100N30B3 Medium speed low Vsat PT IGBTs for 10-50 kHz switching Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		PDF IC110 IXGH100N30B3 200N30PB 7-05-08-D IXGH100N30B3 200n3 200n30

    200N30PB

    Abstract: 200n30
    Text: Preliminary Technical Information GenX3TM 300V IGBT VCES = IC110 = VCE sat ≤ tfi(typ) = IXGH100N30B3 Medium speed low Vsat PT IGBTs for 10-50 kHz switching Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		PDF IC110 IXGH100N30B3 100Turn-off 200N30PB 7-05-08-D 200n30

    IXGX400N30A3

    Abstract: IXGK400N30A3 PLUS247 ixgx400
    Text: IXGK400N30A3 IXGX400N30A3 GenX3TM 300V IGBT VCES = 300V IC25 = 400A VCE sat ≤ 1.15V Ultra-low Vsat PT IGBTs for up to 10kHz switching TO-264 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 300


    Original     		PDF IXGK400N30A3 IXGX400N30A3 10kHz O-264 IC110 400N30A3 1-18-08-A IXGX400N30A3 IXGK400N30A3 PLUS247 ixgx400

    3 phase bridge rectifier 400HZ

    Abstract: 3-phase bldc motor single chip 500V direct drive MTBF fit IGBT 1200 H BRIDGE inverters using igbt in matlab single phase fully controlled rectifier 110v 440V ac to 390V dc converter circuit SEN-5282-2 full wave bridge rectifier 25A 50V fast recovery zener ssr 115v 400Hz
    Text: Products and Solutions Sensitron Semiconductor • 221 West Industry Court · Deer Park, NY 11729-4681 · Phone 631 586 7600 · Fax (631) 242 9798 · World Wide Web - www.sensitron.com · E-mail - sales@sensitron.com 143-0209 Fully Integrated Motor Controllers


    Original     		PDF AS9100 MIL-PRF-19500 MIL-PRF-38534 3 phase bridge rectifier 400HZ 3-phase bldc motor single chip 500V direct drive MTBF fit IGBT 1200 H BRIDGE inverters using igbt in matlab single phase fully controlled rectifier 110v 440V ac to 390V dc converter circuit SEN-5282-2 full wave bridge rectifier 25A 50V fast recovery zener ssr 115v 400Hz

    PC817 example circuits

    Abstract: opto isolator pc817 m57962l dz4in1 pc817 circuit M57959L/M57962L optocoupler IC PC817 pin details M57962L Application Note schematic diagram inverter 12v to 24v 30a M57959L
    Text: Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 5.0 Driving IGBT Modules When using high power IGBT modules it is often desirable to completely isolate control circuits from the gate drive. A block diagram of this type of gate drive is


    Original     		PDF 6V-18V, 100ns) M57994-01 PC817 example circuits opto isolator pc817 m57962l dz4in1 pc817 circuit M57959L/M57962L optocoupler IC PC817 pin details M57962L Application Note schematic diagram inverter 12v to 24v 30a M57959L

    MITSUBISHI IGBT SPICE

    Abstract: IGBT 60A spice model n mosfet depletion pspice model parameters igbt 1200v 600a igbt spice Infineon power diffusion process IGBT Pspice TRANSISTOR 1pz igbt spice model bjt 100a
    Text: Parameter Extraction for a Physics-Based Circuit Simulator IGBT Model X. Kang, E. Santi, J.L. Hudgins, P.R. Palmer* and J.F. Donlon* Department of Electrical Engineering University of South Carolina Columbia, SC 29208, USA kang@sc.edu *Department of Engineering


    Original     		PDF

    IRF AN1001

    Abstract: IRF6218S AN1001 IRF6218L IRF6218S-l
    Text: PD - 95863A IRF6218S IRF6218L SMPS MOSFET HEXFET Power MOSFET Applications l VDSS Reset Switch for Active Clamp Reset DC-DC converters RDS on max -150V 150m:@VGS = -10V ID -27A Benefits l l l Low Gate to Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including


    Original     		PDF 5863A IRF6218S IRF6218L -150V AN1001) O-262 AN-994. IRF AN1001 IRF6218S AN1001 IRF6218L IRF6218S-l

    Untitled

    Abstract: No abstract text available
    Text: PD - 95863A IRF6218S IRF6218L SMPS MOSFET HEXFET Power MOSFET Applications l Reset Switch for Active Clamp Reset DC-DC converters VDSS RDS on max -150V 150m:@VGS = -10V ID -27A Benefits l l l Low Gate to Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including


    Original     		PDF 5863A IRF6218S IRF6218L -150V AN1001) O-262 AN-994.

    AN1001

    Abstract: IRF6218L IRF6218S
    Text: PD - 95863 IRF6218S IRF6218L SMPS MOSFET HEXFET Power MOSFET Applications l Reset Switch for Active Clamp Reset DC-DC converters VDSS RDS on max -150V 150m:@VGS = -10V ID -27A Benefits l l l Low Gate to Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including


    Original     		PDF IRF6218S IRF6218L -150V AN1001) O-262 -520A/ AN-994. AN1001 IRF6218L IRF6218S

    M57962L

    Abstract: m57959l "MITSUBISHI HYBRID" CM600HA-24H CM600HA-24 "IGBT Drivers" 57962l CM600HA24H
    Text: MITSUBISHI SEMICONDUCTORS POWER MODULES MOS USING HYBRID GATE DRIVERS AND GATE DRIVE POWER SUPPLIES 5.0 Using Hybrid Gate Drivers Mitsubishi offers four single in-line hybrid ICs for driving IGBT modules. All four drivers are high speed devices designed to convert


    OCR Scan     		PDF 00V/ms MJD44H11 D44VH10 MJE15030 MJE243 2SC4151 MJD45H11 D45VH10 MJE15031 MJE253 M57962L m57959l "MITSUBISHI HYBRID" CM600HA-24H CM600HA-24 "IGBT Drivers" 57962l CM600HA24H