FGH40N60
Abstract: No abstract text available
Text: FGH40N60SF tm 600V, 40A Field Stop IGBT Features General Description • High current capability • Low saturation voltage: VCE sat =2.3V @ IC = 40A • High input impedance • Fast switching Using Novel Field Stop IGBT Technology, Fairchild’s new sesries of Field Stop IGBTs offer the optimum performance for
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FGH40N60SF
100oC
FGH40N60
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FGH40N60SFD
Abstract: FGH40N60SFDTU
Text: FGH40N60SFD tm 600V, 40A Field Stop IGBT Features General Description • High current capability • Low saturation voltage: VCE sat =2.3V @ IC = 40A • High input impedance • Fast switching Using Novel Field Stop IGBT Technology, Fairchild’s new sesries of Field Stop IGBTs offer the optimum performance for
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FGH40N60SFD
100oC
FGH40N60SFD
FGH40N60SFDTU
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Untitled
Abstract: No abstract text available
Text: FGI40N60SF tm 600V, 40A Field Stop IGBT Features General Description • High current capability • Low saturation voltage: VCE sat =2.3V @ IC = 40A • High input impedance • Fast switching Using Novel Field Stop IGBT Technology, Fairchild’s new sesries of Field Stop IGBTs offer the optimum performance for
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FGI40N60SF
100oC
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Untitled
Abstract: No abstract text available
Text: FGH40N60UFD tm 600V, 40A Field Stop IGBT Features General Description • High current capability • Low saturation voltage: VCE sat =1.8V @ IC = 40A • High input impedance • Fast switching Using Novel Field Stop IGBT Technology, Fairchild’s new sesries of Field Stop IGBTs offer the optimum performance for
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FGH40N60UFD
100oC
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Untitled
Abstract: No abstract text available
Text: FGH40N60UF tm 600V, 40A Field Stop IGBT Features General Description • High current capability • Low saturation voltage: VCE sat =1.8V @ IC = 40A • High input impedance • Fast switching Using Novel Field Stop IGBT Technology, Fairchild’s new sesries of Field Stop IGBTs offer the optimum performance for
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FGH40N60UF
100oC
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Untitled
Abstract: No abstract text available
Text: FGH40N65UFD tm 650V, 40A Field Stop IGBT Features General Description • High current capability • Low saturation voltage: VCE sat =1.8V @ IC = 40A • High input impedance • Fast switching Using Novel Field Stop IGBT Technology, Fairchild’s new sesries of Field Stop IGBTs offer the optimum performance for
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FGH40N65UFD
100oC
40lete
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FGH40N60SMDF
Abstract: No abstract text available
Text: FGH40N60SMDF tm 600V, 40A Field Stop IGBT Features General Description • Maximum Junction Temperature : TJ =175oC • Positive Temperaure Co-efficient for easy parallel operating • High current capability • Low saturation voltage: VCE sat =1.9V(Typ.) @ IC = 40A
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FGH40N60SMDF
175oC
FGH40N60SMDF
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GW40NC60WD
Abstract: STGW40NC60WD JESD97 icl 298
Text: STGW40NC60WD N-channel 40A - 600V - TO-247 Very fast switching PowerMESH IGBT General features Type VCES STGW40NC60WD 600V IC VCE sat (Max)@ 25°C @100°C <2.5V 40A • Low CRES / CIES ratio (no cross conduction susceptibility) ■ High frequency operation
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STGW40NC60WD
O-247
GW40NC60WD
STGW40NC60WD
JESD97
icl 298
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STGW40NC60WD
Abstract: icl 298 HF IGBT GW40NC60WD ic MARKING QG JESD97
Text: STGW40NC60WD N-channel 40A - 600V - TO-247 Very fast switching PowerMESH IGBT General features Type VCES STGW40NC60WD 600V IC VCE sat (Max)@ 25°C @100°C <2.5V 40A • Low CRES / CIES ratio (no cross conduction susceptibility) ■ High frequency operation
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STGW40NC60WD
O-247
STGW40NC60WD
icl 298
HF IGBT
GW40NC60WD
ic MARKING QG
JESD97
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Untitled
Abstract: No abstract text available
Text: APT20GT60KR 600V 40A Thunderbolt IGBT TO-220 IGBT™ The Thunderbolt is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBT™ offers superior ruggedness and ultrafast switching speed. • Low Forward Voltage Drop
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APT20GT60KR
O-220
150KHz
MIL-STD-750
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Untitled
Abstract: No abstract text available
Text: APT20GT60KR 600V 40A Thunderbolt IGBT TO-220 IGBT™ The Thunderbolt is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBT™ offers superior ruggedness and ultrafast switching speed. • Low Forward Voltage Drop
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APT20GT60KR
O-220
150KHz
MIL-STD-750
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Untitled
Abstract: No abstract text available
Text: APT20GT60KR APT20GT60KR 600V 40A Thunderbolt IGBT TO-220 The Thunderbolt IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBT™ offers superior ruggedness and ultrafast switching speed. • Low Forward Voltage Drop
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APT20GT60KR
O-220
150KHz
APT20GT60KR
O-220AC
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Untitled
Abstract: No abstract text available
Text: APT20GT60BR APT20GT60BR 600V 40A Thunderbolt IGBT TO-247 The Thunderbolt IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBT™ offers superior ruggedness and ultrafast switching speed. • Low Forward Voltage Drop
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APT20GT60BR
O-247
150KHz
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Untitled
Abstract: No abstract text available
Text: APT20GT60BR 600V 40A Thunderbolt IGBT TO-247 The Thunderbolt IGBT™ is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBT™ offers superior ruggedness and ultrafast switching speed. • Low Forward Voltage Drop
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APT20GT60BR
O-247
150KHz
APT20GT60BR
66VCES
MIL-STD-750
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APT30GT60AR
Abstract: No abstract text available
Text: APT30GT60AR 600V 40A Thunderbolt IGBT TO-3 The Thunderbolt IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBT™ offers superior ruggedness and ultrafast switching speed. • Low Forward Voltage Drop
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APT30GT60AR
150KHz
O-204AE)
66VCES
MIL-STD-750
APT30GT60AR
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Untitled
Abstract: No abstract text available
Text: APT20GT60BR 600V 40A Thunderbolt IGBT TO-247 The Thunderbolt IGBT™ is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBT™ offers superior ruggedness and ultrafast switching speed. • Low Forward Voltage Drop
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APT20GT60BR
O-247
150KHz
MIL-STD-750
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GW39NC60
Abstract: No abstract text available
Text: STGW39NC60VD N-channel 40A - 600V - TO-247 Very fast switching PowerMESH IGBT Features Type VCES VCE sat (Max)@ 25°C IC @100°C <2.5V 40A STGW39NC60VD 600V • Low CRES / CIES ratio (no cross conduction susceptibility) ■ High frequency operation ■
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STGW39NC60VD
O-247
STGW39NC60VD
O-247
GW39NC60
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schematic diagram "induction heating"
Abstract: schematic diagram induction heating diagram induction schematic diagram induction
Text: STGW39NC60VD N-channel 40A - 600V - TO-247 Very fast switching PowerMESH IGBT Features Type VCES VCE sat (Max)@ 25°C IC @100°C <2.5V 40A STGW39NC60VD 600V • Low CRES / CIES ratio (no cross conduction susceptibility) ■ High frequency operation ■
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STGW39NC60VD
O-247
STGW39NC60VD
O-247
schematic diagram "induction heating"
schematic diagram induction heating
diagram induction
schematic diagram induction
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W39NC60VD
Abstract: No abstract text available
Text: STGW39NC60VD N-channel 40A - 600V - TO-247 Very fast switching PowerMESH IGBT PRELIMINARY DATA General features Type VCES VCE sat (Max)@ 25°C IC @100°C <2.5V 40A STGW39NC60VD 600V • Low CRES / CIES ratio (no cross conduction susceptibility) ■ High frequency operation
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STGW39NC60VD
O-247
STGW39NC60VD
O-247
W39NC60VD
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Untitled
Abstract: No abstract text available
Text: STGW39NC60VD N-channel 40A - 600V - TO-247 Very fast switching PowerMESH IGBT PRELIMINARY DATA General features Type VCES VCE sat (Max)@ 25°C IC @100°C <2.5V 40A STGW39NC60VD 600V • Low CRES / CIES ratio (no cross conduction susceptibility) ■ High frequency operation
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STGW39NC60VD
O-247
STGW39NC60VD
O-247
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GW39NC60
Abstract: GW39NC60VD JESD97 STGW39NC60VD
Text: STGW39NC60VD N-channel 40A - 600V - TO-247 Very fast switching PowerMESH IGBT PRELIMINARY DATA General features Type VCES VCE sat (Max)@ 25°C IC @100°C <2.5V 40A STGW39NC60VD 600V • Low CRES / CIES ratio (no cross conduction susceptibility) ■ High frequency operation
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STGW39NC60VD
O-247
STGW39NC60VD
GW39NC60
GW39NC60VD
JESD97
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20N60C3DR
Abstract: 20N60C3D HGTG20N60C3DR 20n60c3 INTEPOWER LD26 RURP1560
Text: HGTG20N60C3DR 40A, 600V, Rugged, UFS Series N-Channel IGBT with Anti-Parallel Ultrafast Diode November 1996 Features Description • 40A, 600V at TC = 25oC This family of IGBTs was designed for optimum performance in the demanding world of motor control operation as well as
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HGTG20N60C3DR
150oC
330ns
20N60C3DR
20N60C3D
HGTG20N60C3DR
20n60c3
INTEPOWER
LD26
RURP1560
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g20n60b3d
Abstract: HGTG20N60B3D MOSFET 40A 600V LD26 RHRP3060
Text: S E M I C O N D U C T O R HGTG20N60B3D 40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode January 1997 Features Package • 40A, 600V at TC = 25oC JEDEC STYLE TO-247 • Typical Fall Time . . . . . . . . . . . . . . . . . . . . . . . 140ns at 150oC
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HGTG20N60B3D
O-247
140ns
150oC
HGTG20N60B3D
150oC.
g20n60b3d
MOSFET 40A 600V
LD26
RHRP3060
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IRGPC40
Abstract: No abstract text available
Text: INTERNAT ION AL RECTIFIER 4055452 QGlübai 1 • 2bE D Data Sheet No. PD-9.665 t - 3 ^ - 0 3 INSULATED GATE BIPOLAR TRANSISTOR International Rectifier IRGPC40 600V, 40A FEATURES 600V, 40A, TO-247AC IGBT International Rectifier's IRG series of Insulated Gate
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IRGPC40
O-247AC
S54S2
0G10b2S
001Qb2y
IRGPC40
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