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    IGBT 45 F 122 Search Results

    IGBT 45 F 122 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    IGBT 45 F 122 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: CM75TX-24S Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Six IGBT NX-Series Module 75 Amperes/1200 Volts A E F Q K G K K K K AA AB C K K K M J AE AF AD M M AC DETAIL "A" Z 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31


    Original     		PDF CM75TX-24S Amperes/1200

    K3029

    Abstract: CM75TX-24S
    Text: CM75TX-24S Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Six IGBT NX-Series Module 75 Amperes/1200 Volts A E F K Q K J M AE AF AD K G K K K M K AA AB C K M AC DETAIL "A" Z 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31


    Original     		PDF CM75TX-24S Amperes/1200 CM75TX-24S K3029

    DATASHEET OF IC 741

    Abstract: INVERTER 50 kW V23990-P86 flowPACK function of igbt inverter schematic latest INVERTER DESIGN PDF DATASHEET Power INVERTER schematic circuit
    Text: V23990-P863-F49/F48-PM preliminary datasheet flowPACK 0 3rd gen 600V/20A Features flow0 housing Ɣ 2 clip housing in 12mm and 17mm height Ɣ Trench Fieldstop IGBT3 technology Ɣ Compact and low inductance design Ɣ Built-in NTC Target Applications Schematic


    Original     		PDF V23990-P863-F49/F48-PM 00V/20A V23990-P863-F49-PM: V23990-P863-F48-PM: DATASHEET OF IC 741 INVERTER 50 kW V23990-P86 flowPACK function of igbt inverter schematic latest INVERTER DESIGN PDF DATASHEET Power INVERTER schematic circuit

    ACPL-5160

    Abstract: smd transistor t1A 93 TRANSISTOR SMD MARKING CODE t2a smd transistor t1A 66 smd transistor t1A 59 TRANSISTOR SMD MARKING CODE 3K TF0123 5161 common anode 516X ion gold detector
    Text: ACPL-5160, ACPL-5161 and 5962-12236* 2.5 Amp Gate Drive Optocoupler with Integrated VCE Desaturation Detection and Fault Status Feedback Data Sheet Description Features This family of Avago 2.5 Amp Gate Drive Optocouplers provides Integrated Desaturation (VCE) Detection and Fault


    Original     		PDF ACPL-5160, ACPL-5161 MIL-PRF-38534 AV02-3964EN ACPL-5160 smd transistor t1A 93 TRANSISTOR SMD MARKING CODE t2a smd transistor t1A 66 smd transistor t1A 59 TRANSISTOR SMD MARKING CODE 3K TF0123 5161 common anode 516X ion gold detector

    Untitled

    Abstract: No abstract text available
    Text: V23990-P860-F49/F48-PM preliminary datasheet flowPACK 0 3rd gen 1200V/35A Features flow0 housing Ɣ 2 clip housing in 12mm and 17mm height Ɣ Trench Fieldstop IGBT4 technology Ɣ Compact and low inductance design Ɣ Built-in NTC Target Applications Schematic


    Original     		PDF V23990-P860-F49/F48-PM 200V/35A V23990-P860-F49-PM: V23990-P860-F48-PM:

    full bridge igbt induction heating generator

    Abstract: transistor x112 WESTCODE catalog 100-12E8 2-IAO-QMC-01001 IGBT ac switch in SSR IGBT D-Series IGCT 4.5kv ixys vuo 52 input id MITA15WB1200TMH
    Text: P R O D U C T S E L E C T O R G U I D E IGBT & Rectifier Modules M A Y 2 0 0 7 Selector Guide incl.: Product Overview Tables Application Overview Technology Overview MiniPack 2 NEW Press-Pack IGBTs POWER DEVICES Power MOSFET Discreets RF Power MOSFETs IGBT Discreets


    Original     		PDF

    FS20R06XE3

    Abstract: aeg powerblock tt bsm25gp120 b2 thyristor aeg aeg powerblock tt 32 n STR W 6856 DATA SHEET HIGH VOLTAGE ISOLATION DZ 2101 FS450R12KE3 S1 MR 4710 IC aeg powerblock dd
    Text: Power Semiconductors » Short Form Catalog » 2004 A Wide Range In Short Words. An Infineon Technologies Company go to content go to content eupec eupec European Power Semiconductors and Electronics Company – is situated in Warstein and is one of the world’s leading manufacturers of Power Semiconductors


    Original     		PDF D-59581 FS20R06XE3 aeg powerblock tt bsm25gp120 b2 thyristor aeg aeg powerblock tt 32 n STR W 6856 DATA SHEET HIGH VOLTAGE ISOLATION DZ 2101 FS450R12KE3 S1 MR 4710 IC aeg powerblock dd

    FS450R12KE3 S1

    Abstract: infineon pmb 6850 e bsm25gp120 b2 HIGH VOLTAGE ISOLATION DZ 2101 infineon pmb 6850 Thyristor eupec POWERBLOCK 2SD 1460 pmb 6850 V61-14 BSM35GP120
    Text: Power Semiconductors Shortform Catalog 2003 An Infineon Technologies Company go to content eupec eupec Inc. headquartered in Lebanon, New Jersey, provides a wide array of innovative semiconductor products, includinge IGBT high power and standard modules, thyristors and diodes.


    Original     		PDF E-103, FS450R12KE3 S1 infineon pmb 6850 e bsm25gp120 b2 HIGH VOLTAGE ISOLATION DZ 2101 infineon pmb 6850 Thyristor eupec POWERBLOCK 2SD 1460 pmb 6850 V61-14 BSM35GP120

    Untitled

    Abstract: No abstract text available
    Text: < IGBT MODULES > CM75MXA-24S HIGH POWER SWITCHING USE INSULATED TYPE Collector current I C .….… 75A Collector-emitter voltage V CES .… 1 2 0 0 V Maximum junction temperature T j m a x .


    Original     		PDF CM75MXA-24S UL1557, E323585

    kpb 307

    Abstract: KP8 500 KP9 1500 -12 KPd 1500 TEG KP5-600 THYRISTOR KP8 800 igbt types 6000v KP7 500 TBA 1240 ic teg thyristor
    Text: Contents Powerline IGBT Modules Pulsed Power Thyristors 1200V IGBT Modules Pulsed Power Thyristors Bi-directional switches, choppers, dual switches, half bridges and single switches 2 1700V IGBT Modules Bi-directional switches, choppers, dual switches, half


    Original     		PDF DS5766-4. kpb 307 KP8 500 KP9 1500 -12 KPd 1500 TEG KP5-600 THYRISTOR KP8 800 igbt types 6000v KP7 500 TBA 1240 ic teg thyristor

    DCR370T

    Abstract: DCR370T18 DCR1560F26 DCR1560F drd2960y40 alsic 105 DCR1710F18 DCR650G34 DCR2760V DRD850D34
    Text: Contents Powerline IGBT Modules Pulsed Power Thyristors 1200V IGBT Modules Pulsed Power Thyristors Choppers, dual switches, half bridges and single switches 2 1700V IGBT Modules Bi-directional switches, choppers, dual switches, half bridges and single switches


    Original     		PDF 4500Vee DS5766-4. DCR370T DCR370T18 DCR1560F26 DCR1560F drd2960y40 alsic 105 DCR1710F18 DCR650G34 DCR2760V DRD850D34

    Untitled

    Abstract: No abstract text available
    Text: Power Module 600V 100A IGBT Module MG06100S-BR1MM RoHS Features • Ultra Low Loss • P  ositive Temperature Coefficient • High Ruggedness • W  ith Fast Free-Wheeling Diodes • H  igh Short Circuit Capability Applications • SMPS and UPS • Converter


    Original     		PDF MG06100S-BR1MM E71639

    Untitled

    Abstract: No abstract text available
    Text: SKM 145GB066D Absolute Maximum Ratings Symbol Conditions IGBT  4 ,- . $ 4 +?- . $;B   ,-.!     * "22  +@- %  A2 . +-2 % :22 % C ,2  4 +-2 . " 7  ,- . +-2 %  A2 . +22 % :22 % AA2 % ,22 % 0 12 /// 3 +?-


    Original     		PDF 145GB066D 11Typ.

    Untitled

    Abstract: No abstract text available
    Text: SKM 145GB066D Absolute Maximum Ratings Symbol Conditions IGBT  4 ,- . $ 4 +?- . $;B   ,-.!     * "22  +@- %  A2 . +-2 % :22 % C ,2  4 +-2 . " 7  ,- . +-2 %  A2 . +22 % :22 % AA2 % ,22 % 0 12 /// 3 +?-


    Original     		PDF 145GB066D 11Typ.

    145GB066D

    Abstract: No abstract text available
    Text: SKM 145GB066D Absolute Maximum Ratings Symbol Conditions IGBT  4 ,- . $ 4 +?- . $;B   ,-.!     * "22  +@- %  A2 . +-2 % :22 % C ,2  4 +-2 . " 7  ,- . +-2 %  A2 . +22 % :22 % AA2 % ,22 % 0 12 /// 3 +?-


    Original     		PDF 145GB066D 11Typ. 145GB066D

    Untitled

    Abstract: No abstract text available
    Text: SKM 145GB066D Absolute Maximum Ratings Symbol Conditions IGBT  4 ,- . $ 4 +?- . $;B   ,-.!     * "22  +@- %  A2 . +-2 % :22 % C ,2  4 +-2 . " 7  ,- . +-2 %  A2 . +22 % :22 % AA2 % ,22 % 0 12 /// 3 +?-


    Original     		PDF 145GB066D 11Typ.

    Untitled

    Abstract: No abstract text available
    Text: SKM 145GB066D Absolute Maximum Ratings Symbol Conditions IGBT  4 ,- . $ 4 +?- . $;B   ,-.!     * "22  +@- %  A2 . +-2 % :22 % C ,2  4 +-2 . " 7  ,- . +-2 %  A2 . +22 % :22 % AA2 % ,22 % 0 12 /// 3 +?-


    Original     		PDF 145GB066D 11Typ.

    Untitled

    Abstract: No abstract text available
    Text: VS-ETF075Y60U www.vishay.com Vishay Semiconductors EMIPAK-2B PressFit Power Module 3-Levels Half-Bridge Inverter Stage, 75 A FEATURES • • • • • • • • • • • • EMIPAK-2B EMIPAK 2B package example PRODUCT SUMMARY Q1 - Q4 IGBT STAGE VCES


    Original     		PDF VS-ETF075Y60U 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: VS-ETF075Y60U www.vishay.com Vishay Semiconductors EMIPAK-2B PressFit Power Module 3-Levels Half-Bridge Inverter Stage, 75 A FEATURES • • • • • • • • • • • • EMIPAK-2B package example PRODUCT SUMMARY Q1 - Q4 IGBT STAGE 600 V VCES


    Original     		PDF VS-ETF075Y60U 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: VS-ETF075Y60U www.vishay.com Vishay Semiconductors EMIPAK-2B PressFit Power Module Three Levels Half-Bridge Inverter Stage, 75 A FEATURES • • • • • • • • • • • EMIPAK-2B EMIPAK 2B package example PRODUCT SUMMARY Q1 - Q4 IGBT STAGE VCES


    Original     		PDF VS-ETF075Y60U 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    145GB066D

    Abstract: SKM145GB066D Semitrans Semikron
    Text: SKM 145GB066D Absolute Maximum Ratings Symbol Conditions IGBT  4 ,- . $ 4 +?- . $;B   ,-.!     * "22  +@- %  A2 . +-2 % :22 % C ,2  4 +-2 . " 7  ,- . +-2 %  A2 . +22 % :22 % AA2 % ,22 % 0 12 /// 3 +?-


    Original     		PDF 145GB066D 145GB066D SKM145GB066D Semitrans Semikron

    RJK03P7DPA

    Abstract: NP109N055PUJ rjh60d7bdpq rjh60t04 rjp65t43 NP75N04YUG NP60N055MUK NP109N04PUK RJU6052SDPD-E0 PS2761B-1
    Text: RENESAS Electronics New Product Highlight Highlight of Discrete Devices Renesas Electronics Corporation Analog & Power Devices Marketing & Production Planning Division July 2013 2012 Renesas Electronics Corporation. All rights reserved. 00000-A RENESAS Discrete Devices Position


    Original     		PDF 0000-A PAE-AA-12-0177-1 PAE-AA-12-0049-1 RJK03P7DPA NP109N055PUJ rjh60d7bdpq rjh60t04 rjp65t43 NP75N04YUG NP60N055MUK NP109N04PUK RJU6052SDPD-E0 PS2761B-1

    145GB066D

    Abstract: SKM145GB066D
    Text: SKM 145GB066D Absolute Maximum Ratings Symbol Conditions IGBT  4 ,- . $ 4 +?- . $;B   ,-.!     * "22  +@- %  A2 . +-2 % :22 % C ,2  4 +-2 . " 7  ,- . +-2 %  A2 . +22 % :22 % AA2 % ,22 % 0 12 /// 3 +?-


    Original     		PDF 145GB066D 11Typ. 145GB066D SKM145GB066D

    torque for SELF TAPPING SCREW

    Abstract: No abstract text available
    Text: < IGBT MODULES > CM75MXA-24S HIGH POWER SWITCHING USE INSULATED TYPE Collector current I C .….… 75A Collector-emitter voltage V CES .… 1 2 0 0 V Maximum junction temperature T j m a x .


    Original     		PDF CM75MXA-24S UL1557, E323585 torque for SELF TAPPING SCREW