Insulated Gate Bipolar Transistors
Abstract: igbt
Text: SCSOA IGBT S-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode Short Circuit Current Rated
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Insulated Gate Bipolar Transistors
Abstract: igbt transistors IGBT ixys igbt
Text: HiPerFASTTM IGBT G-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode 2000 IXYS All rights reserved B2 - 1
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40n60 igbt
Abstract: 35N120u1 B1116 equivalent for 30n60 40n60 equivalent 30n60 equivalent 30n60 to-220 ixsn 35N120U1 igbt equivalent to 40n60 80n60
Text: SCSOA IGBT S-Series / D-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode Short Circuit Current Rated SCSOA IGBT S-Series Contents IGBT VCES max V High Speed Low VCE(sat) 600 IC VCE(sat) max TC = 25 °C TC = 25 °C A V TO-220 (IXSP) TO-263
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O-220
O-263
O-247
16N60
B1-10
24N60
30N60
40N60
40n60 igbt
35N120u1
B1116
equivalent for 30n60
40n60 equivalent
30n60 equivalent
30n60 to-220
ixsn 35N120U1
igbt equivalent to 40n60
80n60
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200n60
Abstract: 20N30 n60c 50N60 7N60B IC IGBT 25N120 IC600 80n60 60n60 igbt 25N120
Text: HiPerFASTTM IGBT G-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode HiPerFASTTM IGBT G-Series Contents IGBT VCES V 300 Low VCE(sat) 600 1000 TO-220 TO-263 TO-247 IC VCE(sat) (IXGP) (IXGA) (IXGH) max TC = 25 °C TC=25 °C A V 40 56 60 40
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PLUS247
20N30
28N30
30N30
40N30
31N60
38N60
41N60
60N60
O-264
200n60
20N30
n60c
50N60
7N60B
IC IGBT 25N120
IC600
80n60
60n60 igbt
25N120
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IGBT Guide
Abstract: KA3160 IGBT gate drivers igbt KA3161 DIP8
Text: Analog and Mixed Signal Products CD-ROM Selection Guide IGBT Gate Drivers Product Description Package Packing Code1 Suffix KA3160 IGBT gate driver with protection DIP-8 T KA3161 IGBT gate driver with protection DIP-8 T KA3162 IGBT gate driver with protection
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KA3160
KA3161
KA3162
IGBT Guide
IGBT gate drivers
igbt
DIP8
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4mbi400vg
Abstract: 4MBI400VG-060R-50 4mbi400vg060r50 4mbi400vg-060
Text: / 4MBI400VG-060R-50 IGBT Modules IGBT MODULE V series 600V / 400A / IGBT, RB-IGBT 4 in one package Features Higher Efficiency Optimized A (T-type) -3 level circuit Low inductance module structure Featuring Reverse Blocking IGBT (RB-IGBT)
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4MBI400VG-060R-50
4mbi400vg
4MBI400VG-060R-50
4mbi400vg060r50
4mbi400vg-060
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UA8316 Preliminary LINEAR INTEGRATED CIRCUIT IGBT GATE DRIVER DESCRIPTION Integrating IGBT gate drive circuits on a single chip, The UTC UA8316 is a dedicated IC and a high current can directly drive IGBT. FEATURES * A high current can directly drive IGBT
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UA8316
UA8316
-200mA
UA8316L-G07-T
UA8316G-G07-T
QW-R122-010
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Untitled
Abstract: No abstract text available
Text: IGBT MODULE Spec.No.IGBT-SP-13012 R0 P1/10 MBN800E33D-AX Silicon N-channel IGBT 3300V D version FEATURES High speed low loss IGBT. Low-injection punch-through IGBT. Low driving power due to low input capacitance MOS gate. High speed low recovery loss diode.
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IGBT-SP-13012
P1/10
MBN800E33D-AX
000cycles)
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IGBT FF 300
Abstract: diode 1700v eupec igbt FF400R17KF6CB2 KF6C
Text: Technische Information / Technical Information IGBT-Module IGBT-Modules FF 400 R 17 KF6C B2 1700V IGBT Modul mit low loss IGBT der 2. Generation und softer EmCon Diode 1700V IGBT Module with low loss IGBT of 2nd generation and soft EmCon Diode Höchstzulässige Werte / Maximum rated values
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FF400R17KF6CB2
Abstract: No abstract text available
Text: Technische Information / Technical Information IGBT-Module IGBT-Modules FF 400 R 17 KF6C B2 1700V IGBT Modul mit low loss IGBT der 2. Generation und softer EmCon Diode 1700V IGBT Module with low loss IGBT of 2nd generation and soft EmCon Diode Höchstzulässige Werte / Maximum rated values
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FZ800R17KF6CB2
Abstract: KF6C
Text: Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 800 R 17 KF6C B2 1700V IGBT Modul mit low loss IGBT der 2. Generation und softer EmCon Diode 1700V IGBT Module with low loss IGBT of 2nd generation and soft EmCon Diode Höchstzulässige Werte / Maximum rated values
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FF400R17KF6CB2
Abstract: IGBT FF 300 igbt ff 75 r
Text: Technische Information / Technical Information IGBT-Module IGBT-Modules FF 400 R 17 KF6C B2 1700V IGBT Modul mit low loss IGBT der 2. Generation und softer EmCon Diode 1700V IGBT Module with low loss IGBT of 2nd generation and soft EmCon Diode Höchstzulässige Werte / Maximum rated values
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FF400R17KF6CB2
FF400R17KF6CB2
IGBT FF 300
igbt ff 75 r
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FF400R17KF6CB2
Abstract: No abstract text available
Text: Technische Information / Technical Information IGBT-Module IGBT-Modules FF 400 R 17 KF6C B2 1700V IGBT Modul mit low loss IGBT der 2. Generation und softer EmCon Diode 1700V IGBT Module with low loss IGBT of 2nd generation and soft EmCon Diode Höchstzulässige Werte / Maximum rated values
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eupec igbt
Abstract: IGBT FZ 1800 FZ800R17KF6CB2 IGBT module FZ 1200 IGBT FZ 800
Text: Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 800 R 17 KF6C B2 1700V IGBT Modul mit low loss IGBT der 2. Generation und softer EmCon Diode 1700V IGBT Module with low loss IGBT of 2nd generation and soft EmCon Diode Höchstzulässige Werte / Maximum rated values
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diode 1700v
Abstract: FZ800R17KF6CB2
Text: Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 800 R 17 KF6C B2 1700V IGBT Modul mit low loss IGBT der 2. Generation und softer EmCon Diode 1700V IGBT Module with low loss IGBT of 2nd generation and soft EmCon Diode Höchstzulässige Werte / Maximum rated values
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IGBT parallel
Abstract: igbt IGBT manual IGBT TEST igbt-modules DATA SHEET OF IGBT what is fast IGBT transistor manual manual semiconductor igbtmodules
Text: N-Series IGBT-Modules / Application Manual CONTENT N-Series IGBT-Modules / Application Manual N-Series IGBT-Modules / Application Manual N-Series IGBT-Modules Application Manual page 1-1 N-Series IGBT-Modules Application Manual 1.1: Device Structure and Characterisitcs
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CHMC IC
Abstract: CHMC D8316 D8316 chmc LTAGE D831 chmc si1 chmc so2 si103
Text: Silicore IGBT GATE DRIVER D8316 DESCRIPTION Outline Drawing D8316 is a dedicated IC integrating IGBT gate drive circuit on a sing le chip . A high cu rrent directly drives IGBT . FEATURE z Can directly control fro m a micro controller. z Can directly drive the IGBT gate using a high
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D8316
D8316
-200mA
5600pF
V/50kHz
CHMC IC
CHMC D8316
chmc
LTAGE
D831
chmc si1
chmc so2
si103
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FP15R12W1T4
Abstract: No abstract text available
Text: Technische Information / technical information IGBT-Module IGBT-modules FP15R12W1T4_B11 Vorläufige Daten / preliminary data IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values Kollektor-Emitter-Sperrspannung collector-emitter voltage
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FP15R12W1T4
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FP10R12W1T4
Abstract: No abstract text available
Text: Technische Information / technical information IGBT-Module IGBT-modules FP10R12W1T4_B11 Vorläufige Daten / preliminary data IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values Kollektor-Emitter-Sperrspannung collector-emitter voltage
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FP10R12W1T4
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IGPT CIRCUIT
Abstract: IGBT Gate Drive Optocoupler IGBT desaturation IC 3160 hcpl 3160 power electronic transistor IGPT HCPL-3160
Text: H 2.0 Amp IGBT Gate Drive Optocoupler with Integrated Over-current Protection and Fault Feedback Preliminary Technical Data HCPL-3160 Features Description • Integrated IGBT Desaturation Protection • Integrated Optically Isolated IGBT Fault Status Feedback
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HCPL-3160
HCPL-3160
SO-16
IGPT CIRCUIT
IGBT Gate Drive Optocoupler
IGBT desaturation
IC 3160
hcpl 3160
power electronic transistor IGPT
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IGBT Gate Drive Optocoupler
Abstract: IGPT CIRCUIT controller for PWM with IGBT IGBT desaturation HCPL-3160 HCPL316
Text: H 2.0 Amp IGBT Gate Drive Optocoupler with Integrated Over-current Protection and Fault Feedback Preliminary Technical Data HCPL-3160 Features Description • Integrated IGBT Desaturation Protection • Integrated Optically Isolated IGBT Fault Status Feedback
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HCPL-3160
HCPL-3160
SO-16
IGBT Gate Drive Optocoupler
IGPT CIRCUIT
controller for PWM with IGBT
IGBT desaturation
HCPL316
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Insulated Gate Bipolar Transistors
Abstract: No abstract text available
Text: n ix Y S HIPerFASÎ IGBT 0-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode 1 X Ki:
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75-06A7T
Abstract: Bt 35 transistor transistor 81 110 w 85 100-12E8 MWI 15-12A7 25-12A7T 30-06A7T transistor T 044
Text: IGBT Modules - Sixpack configuration NPT IGBT Modules N P T IG B T = non-punch through insulated gate bipolar transistor; square R BSO A, short circuit rated 6-pack IG BT - Modules Fig. 81 ► New Type •W K/W Us A u T ,= 25°C IGBT mJ Tj = 125°C IGBT IGBT
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30-06A7
30-06A7T
50-06A7
50-06A7T
75-06A7
75-06A7T
15-12A7
25-12A7
50-12E7
100-06A8
Bt 35 transistor
transistor 81 110 w 85
100-12E8
MWI 15-12A7
25-12A7T
transistor T 044
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diode 12A3
Abstract: 7512a3
Text: IGBT Modules NPT IGBT Modules NPT IGBT = non-punch through insulated gate bipolar transistor square RBSOA, short circuit rated phase leg boost chopper buck chopper I single switch v*C 6Ç rt typ v œs V ► New A A Tc= 25°C IGBT Tc= 80°C IGBT 90 135 160
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page91-100
75-12A3
100-12A3
150-12A4
200-12A4
300-12A4
420-03S4
1000-03G4
40-06D
50-12E
diode 12A3
7512a3
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