40n60 igbt
Abstract: 35N120u1 B1116 equivalent for 30n60 40n60 equivalent 30n60 equivalent 30n60 to-220 ixsn 35N120U1 igbt equivalent to 40n60 80n60
Text: SCSOA IGBT S-Series / D-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode Short Circuit Current Rated SCSOA IGBT S-Series Contents IGBT VCES max V High Speed Low VCE(sat) 600 IC VCE(sat) max TC = 25 °C TC = 25 °C A V TO-220 (IXSP) TO-263
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O-220
O-263
O-247
16N60
B1-10
24N60
30N60
40N60
40n60 igbt
35N120u1
B1116
equivalent for 30n60
40n60 equivalent
30n60 equivalent
30n60 to-220
ixsn 35N120U1
igbt equivalent to 40n60
80n60
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200n60
Abstract: 20N30 n60c 50N60 7N60B IC IGBT 25N120 IC600 80n60 60n60 igbt 25N120
Text: HiPerFASTTM IGBT G-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode HiPerFASTTM IGBT G-Series Contents IGBT VCES V 300 Low VCE(sat) 600 1000 TO-220 TO-263 TO-247 IC VCE(sat) (IXGP) (IXGA) (IXGH) max TC = 25 °C TC=25 °C A V 40 56 60 40
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PLUS247
20N30
28N30
30N30
40N30
31N60
38N60
41N60
60N60
O-264
200n60
20N30
n60c
50N60
7N60B
IC IGBT 25N120
IC600
80n60
60n60 igbt
25N120
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IKW40N120H3
Abstract: IKW40N60 30100 transistor IKW25N120H3 welding inverter IKW40N120T2 Induction Heating Resonant Inverter IGW40N120H3 IKW50N60T IKW40N60H3
Text: Discrete IGBT Selection Tree YES IGBT NO Single IGBT IGBT + Anti-Parallel Diode Soft Hard Diode Commutation Frequency Range 2 – 20 kHz TRENCHSTOP 20 – 100 kHz HighSpeed 2 – 20 kHz TRENCHSTOP™ Duopack 8 – 60 kHz RC series (monolythic) 2 – 20 kHz
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IGpccN60H3
IGpccN120H2
IGpccN120H3
IGpccN60T.
IGpccN100T
IGpccT120.
IGpccN120
IHpccN60T.
IHpccT60.
IHpccN90T
IKW40N120H3
IKW40N60
30100 transistor
IKW25N120H3
welding inverter
IKW40N120T2
Induction Heating Resonant Inverter
IGW40N120H3
IKW50N60T
IKW40N60H3
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smps 500W
Abstract: smps 500w half bridge 500w half bridge smps smps 1kW IRFP450 full bridge smps 100w half bridge h bridge irf740 smps igbt HGTG30N60A4 1kW IGBT
Text: 108872 IGBT LC 0006.1 9/11/00 11:28 AM Page 1 First-Choice Power Switch IGBT Switch Mode Power Supply SMPS IGBTs SMPS IGBT Product Offering New SMPS IGBTs are now the first-choice power switch for high-frequency, off-line power conversion Intersil has developed the 600V IGBT
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100kHz
100kHz
HGTG12N60A4
O-252AA
O-220AB
T0-263AB
O-268
Breakdown/10
100ns
200ns
smps 500W
smps 500w half bridge
500w half bridge smps
smps 1kW
IRFP450 full bridge
smps 100w half bridge
h bridge irf740
smps igbt
HGTG30N60A4
1kW IGBT
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RURU8060
Abstract: 3 phase motor control FM2G75US60 1N4004 SMA smps welding machine Piezoelectric 1Mhz FFPF60B150DS INDUCTION HEATING SGS5N150UF 150 KW motor
Text: IGBT and Rectifier Selection Guide February 2002 Discrete IGBTs 1 Automotive Ignition IGBTs 6 IGBT Smart Power Modules SPM 7 IGBT Modules 8 HyperFast/UltraSoft Recovery Rectifiers (Stealth Family) 9 HyperFast Recovery Rectifiers 10 UltraFast Recovery Rectifiers
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FGS15N40L
OT-227
HGT1N30N60A4D
HGT1N40N60A4D
O-220
HGTP3N60C3
HGTP3N60C3D
SGP6N60UF
SGP6N60UFD
HGTP3N60B3
RURU8060
3 phase motor control
FM2G75US60
1N4004 SMA
smps welding machine
Piezoelectric 1Mhz
FFPF60B150DS
INDUCTION HEATING
SGS5N150UF
150 KW motor
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mosfet 10a 600v
Abstract: D-12 IRGBC20S rectifier IGBT IRGBC20S IGBT
Text: IGBT Designer’s Manual Data Sheets The IGBT devices listed in this Designer’s Manual represent International Rectifier’s IGBT line as of August, 1994. The data presented in this manual supersedes all previous specifications. C-2 PD - 9.687A IRGBC20S
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IRGBC20S
O-220AB
mosfet 10a 600v
D-12
IRGBC20S
rectifier IGBT
IRGBC20S IGBT
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APT8GT60KR
Abstract: No abstract text available
Text: APT8GT60KR 600V Thunderbolt IGBT TO-220 The Thunderbolt IGBT™ is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBT™ offers superior ruggedness and ultrafast switching speed. • Low Forward Voltage Drop
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APT8GT60KR
O-220
150KHz
APT8GT60KR
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Untitled
Abstract: No abstract text available
Text: APT8GT60KR 600V Thunderbolt IGBT TO-220 The Thunderbolt IGBT™ is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBT™ offers superior ruggedness and ultrafast switching speed. • Low Forward Voltage Drop
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APT8GT60KR
O-220
150KHz
APT8GT60KR
Continu15V
66VCES
MIL-STD-750
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SGP23N60UFD
Abstract: No abstract text available
Text: IGBT SGP23N60UFD Ultra-Fast IGBT General Description Features Fairchild's Insulated Gate Bipolar Transistor IGBT UFD series provides low conduction and switching losses. UFD series is designed for the applications such as motor control and general inverters where High Speed Switching
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SGP23N60UFD
O-220
SGP23N60UFD
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SGP13N60UFD
Abstract: No abstract text available
Text: IGBT SGP13N60UFD Ultra-Fast IGBT General Description Features Fairchild's Insulated Gate Bipolar Transistor IGBT UFD series provides low conduction and switching losses. UFD series is designed for the applications such as motor control and general inverters where High Speed Switching
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SGP13N60UFD
O-220
SGP13N60UFD
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2N120BND
Abstract: 12V 200A Relay MOSFET 1200v 3a HGT1S2N120BNDS HGT1S2N120BNDS9A HGTP2N120BND TB334
Text: HGTP2N120BND, HGT1S2N120BNDS Data Sheet January 2000 12A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTP2N120BND and HGT1S2N120BNDS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high voltage switching IGBT
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HGTP2N120BND,
HGT1S2N120BNDS
HGTP2N120BND
HGT1S2N120BNDS
TA49312.
TA49056.
2N120BND
12V 200A Relay
MOSFET 1200v 3a
HGT1S2N120BNDS9A
TB334
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2N120BND
Abstract: 12V 200A Relay TC.. 12A MOSFET Drivers HGT1S2N120BNDS HGT1S2N120BNDS9A HGTP2N120BND TB334 ZENER DIODE 12V
Text: HGTP2N120BND, HGT1S2N120BNDS Data Sheet January 2000 12A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTP2N120BND and HGT1S2N120BNDS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high voltage switching IGBT
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HGTP2N120BND,
HGT1S2N120BNDS
HGTP2N120BND
HGT1S2N120BNDS
TA49312.
TA49056.
2N120BND
12V 200A Relay
TC.. 12A MOSFET Drivers
HGT1S2N120BNDS9A
TB334
ZENER DIODE 12V
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HGT1S2N120BNDS
Abstract: HGT1S2N120BNDS9A HGTP2N120BND TB334
Text: HGTP2N120BND, HGT1S2N120BNDS Data Sheet December 2001 12A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTP2N120BND and HGT1S2N120BNDS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high voltage switching IGBT
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HGTP2N120BND,
HGT1S2N120BNDS
HGTP2N120BND
HGT1S2N120BNDS
TA49312.
TA49056.
HGT1S2N120BNDS9A
TB334
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SGP23N60UF
Abstract: No abstract text available
Text: IGBT SGP23N60UF Ultra-Fast IGBT General Description Features Fairchild's Insulated Gate Bipolar Transistor IGBT UF series provides low conduction and switching losses. UF series is designed for the applications such as motor control and general inverters where High Speed Switching
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SGP23N60UF
O-220
SGP23N60UF
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D-12
Abstract: IRGBC20S IRGBC20S IGBT
Text: IGBT Designer’s Manual Data Sheets The IGBT devices listed in this Designer’s Manual represent International Rectifier’s IGBT line as of August, 1994. The data presented in this manual supersedes all previous specifications. C-2 PD - 9.687A IRGBC20S
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IRGBC20S
O-220AB
D-12
IRGBC20S
IRGBC20S IGBT
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SGP13N60UF
Abstract: GE power transistor list
Text: IGBT SGP13N60UF Ultra-Fast IGBT General Description Features Fairchild's Insulated Gate Bipolar Transistor IGBT UF series provides low conduction and switching losses. UF series is designed for the applications such as motor control and general inverters where High Speed Switching
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SGP13N60UF
O-220
SGP13N60UF
GE power transistor list
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200v 3A ultra fast recovery diode
Abstract: SGP6N60UFD
Text: IGBT SGP6N60UFD Ultra-Fast IGBT General Description Features Fairchild's Insulated Gate Bipolar Transistor IGBT UFD series provides low conduction and switching losses. UFD series is designed for the applications such as motor control and general inverters where High Speed Switching
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SGP6N60UFD
O-220
200v 3A ultra fast recovery diode
SGP6N60UFD
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D-12
Abstract: IRGBC20S
Text: Previous Datasheet Index Next Data Sheet IGBT Designer’s Manual Data Sheets The IGBT devices listed in this Designer’s Manual represent International Rectifier’s IGBT line as of August, 1994. The data presented in this manual supersedes all previous specifications.
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IRGBC20S
O-220AB
D-12
IRGBC20S
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SGP40N60UF
Abstract: tc1612
Text: IGBT SGP40N60UF Ultra-Fast IGBT General Description Features Fairchild's Insulated Gate Bipolar Transistor IGBT UF series provides low conduction and switching losses. UF series is designed for the applications such as motor control and general inverters where High Speed Switching
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SGP40N60UF
O-220
SGP40N60UF
tc1612
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Untitled
Abstract: No abstract text available
Text: APT15GT60KR APT15GT60KR 600V 30A Thunderbolt IGBT TO-220 The Thunderbolt IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBT™ offers superior ruggedness and ultrafast switching speed. • Low Forward Voltage Drop
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APT15GT60KR
O-220
150KHz
APT15GT60KR
O-220AC
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advanced Information SMARTDISCRETES Internally Clamped, N-Channel IGBT MGP20N35CL 20 AMPERES VOLTAGE CLAMPED N-CHANNEL IGBT VCE on = 1-8 VOLTS 350 VOLTS (CLAMPED) This Logic Level Insulated Gate Bipolar Transistor (IGBT)
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MGP20N35CL
-220A
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GP20N
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advanced Information SMARTDISCRETES Internally Clamped, N-Cltannel IGBT MGP20N40CL 20 AMPERES VOLTAGE CLAMPED N-CHANNEL IGBT VCE on = 1-8 VOLTS 400 VOLTS (CLAMPED) T his Logic Level Insulated G ate Bipolar Transistor (IGBT)
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MGP20N40CL
21A-09
O-220AB
GP20N
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EM- 546 motor
Abstract: 1N120CN
Text: HGTD1N120CNS, HGTP1N120CN Semiconductor March 1999 Data Sheet 6.2A, 1200V, NPT Series N-Channel IGBT Features The HGTD1N120CNS, and the HGTP1N120CN are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high voltage switching IGBT
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HGTD1N120CNS,
HGTP1N120CN
HGTP1N120CN
O-220AB
EM- 546 motor
1N120CN
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G5N120
Abstract: No abstract text available
Text: HGTP5N120CN, HGT1S5N120CNS Semiconductor Data Sheet March 1999 25A, 1200V, NPT Series N-Channel IGBT Features The HGTP5N120CN and HGT1S5N120CNS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs
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HGTP5N120CN,
HGT1S5N120CNS
HGTP5N120CN
HGT1S5N120CNS
TA49309.
O-263AB
O-263AB
G5N120
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