GAE75BA60
Abstract: No abstract text available
Text: IGBT MODULE GAE75BA60 UL;E76102 M SanRex IGBT Module GAE75BA60 is designed for high speed, high current switching applications. This Module is electrically isolated and contains IGBT connected with clamp diode in series, soft recovery diode trr=0.1 s reverse connected across IGBT.
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GAE75BA60
E76102
GAE75BA60
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PDF
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GAE75BA60
Abstract: No abstract text available
Text: IGBT MODULE GAE75BA60 UL;E76102 （M） SanRex IGBT Module GAE75BA60 is designed for high speed, high current switching applications. This Module is electrically isolated and contains IGBT connected with clamp diode in series, soft recovery diode trr=0.1 s reverse connected across IGBT.
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GAE75BA60
E76102
GAE75BA60
3-M5depth12mm
VCES600V
31MAX
32MAX
IC75A
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PDF
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4mbi400vg
Abstract: 4MBI400VG-060R-50 4mbi400vg060r50 4mbi400vg-060
Text: / 4MBI400VG-060R-50 IGBT Modules IGBT MODULE V series 600V / 400A / IGBT, RB-IGBT 4 in one package Features Higher Efficiency Optimized A (T-type) -3 level circuit Low inductance module structure Featuring Reverse Blocking IGBT (RB-IGBT)
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4MBI400VG-060R-50
4mbi400vg
4MBI400VG-060R-50
4mbi400vg060r50
4mbi400vg-060
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PDF
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GAE100BA60
Abstract: GAE150BA60 GAE75BA60 sanrex IGBT GH-039 GH-038
Text: IGBT MODULE GAE75BA60 UL;E76102 （M） SanRex IGBT Module GAE75BA60 is designed for high speed, high current switching applications. This Module is electrically isolated and contains IGBT connected with clamp diode in series, soft recovery diode trr=0.1 s reverse connected across IGBT.
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GAE75BA60
E76102
GAE75BA60
3-M5depth12mm
VCES600V
31MAX
32MAX
IC75A
GAE100BA60
GAE150BA60
sanrex IGBT
GH-039
GH-038
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PDF
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Untitled
Abstract: No abstract text available
Text: 10-FZ06NBA084FP-M306L48 preliminary datasheet Switching Definitions INPUT BOOST MOSFET+IGBT General conditions = 125 °C Tj = 4Ω Rgon IGBT Rgoff IGBT = 4Ω INPUT BOOST MOSFET+IGBT Figure 1 MOSFET turn off delayed by 100ns INPUT BOOST MOSFET+IGBT Figure 2
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10-FZ06NBA084FP-M306L48
100ns
VGE10%
Tjmax-25Â
00V/84A
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PDF
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SCR Inverter
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR SPM1003 TECHNICAL DATA DATASHEET 5279, Rev. - Three-Phase IGBT BRIDGE BRAKE IGBT + INRUSH SCR DESCRIPTION: • 1200 VOLT, 150 AMP, THREE PHASE IGBT BRIDGE AND BRAKE IGBT. NEAR HERMETIC PACKAGE. USE OF LATEST 4TH GENERATION IGBT AND DIODE TO MINIMIZE TOTAL LOSSES.
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SPM1003
SCR Inverter
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GT60M303 application
Abstract: GT60M303
Text: GT60M303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT60M303 HIGH POWER SWITCHING APPLICATIONS Unit: mm Fourth generation IGBT FRD included between emitter and collector Enhancement mode type High speed IGBT : tf = 0.25 s TYP. FRD : trr = 0.7 s (TYP.)
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GT60M303
GT60M303 application
GT60M303
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PDF
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GSA400BA60
Abstract: jc31 welder inverter
Text: IGBT MODULE GSA400BA60 UL;E76102 M SanRex IGBT Module GSA400BA60 is designed for high speed, high current switching applications. This Module is electrically isolated and with a fast switching, soft recovery diode trr=0.1 s reverse connected across each IGBT.
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GSA400BA60
E76102
GSA400BA60
jc31
welder inverter
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PDF
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GT60M303
Abstract: GT60M303 circuit toshiba code igbt TOSHIBA IGBT TOSHIBA IGBT GT60M303
Text: GT60M303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT60M303 Unit: mm HIGH POWER SWITCHING APPLICATIONS Fourth generation IGBT FRD included between emitter and collector Enhancement mode type High speed IGBT : tf = 0.25µs TYP. FRD : trr = 0.7µs (TYP.)
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GT60M303
GT60M303
GT60M303 circuit
toshiba code igbt
TOSHIBA IGBT
TOSHIBA IGBT GT60M303
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PDF
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40n60 igbt
Abstract: 35N120u1 B1116 equivalent for 30n60 40n60 equivalent 30n60 equivalent 30n60 to-220 ixsn 35N120U1 igbt equivalent to 40n60 80n60
Text: SCSOA IGBT S-Series / D-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode Short Circuit Current Rated SCSOA IGBT S-Series Contents IGBT VCES max V High Speed Low VCE(sat) 600 IC VCE(sat) max TC = 25 °C TC = 25 °C A V TO-220 (IXSP) TO-263
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O-220
O-263
O-247
16N60
B1-10
24N60
30N60
40N60
40n60 igbt
35N120u1
B1116
equivalent for 30n60
40n60 equivalent
30n60 equivalent
30n60 to-220
ixsn 35N120U1
igbt equivalent to 40n60
80n60
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PDF
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GSA300AA120
Abstract: No abstract text available
Text: IGBT MODULE GSA300AA120 UL;E76102 （M） SanRex IGBT Module GSA300AA120 is designed for high speed, high current switching applications. This Module is electrically isolated and with a fast switching, soft recovery diode trr=0.1 s reverse connected across IGBT.
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GSA300AA120
E76102
GSA300AA120
Ic300A
VCES1200V
depth11mm
63MAX
25MAX
36MAX
109MAX
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PDF
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dc welder
Abstract: sanrex IGBT welder inverter AC welder IGBT circuit igbt ac motor speed control IGBT welder circuit GSA400AA120
Text: IGBT MODULE GSA400AA120 UL;E76102 M SanRex IGBT Module GSA400AA120 is designed for high speed, high current switching applications. This Module is electrically isolated and with a fast switching, soft recovery diode trr=0.1 s reverse connected across each IGBT.
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GSA400AA120
E76102
GSA400AA120
dc welder
sanrex IGBT
welder inverter
AC welder IGBT circuit
igbt ac motor speed control
IGBT welder circuit
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PDF
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igbt 1200v 600a
Abstract: GSA300AA120 INVERTER FOR motor Inverter Welder sanrex IGBT 30v igbt gate ratings welder inverter Soft Recovery Diode 30V 600A igbt
Text: IGBT MODULE GSA300AA120 UL;E76102 M SanRex IGBT Module GSA300AA120 is designed for high speed, high current switching applications. This Module is electrically isolated and with a fast switching, soft recovery diode trr=0.1 s reverse connected across each IGBT.
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GSA300AA120
E76102
GSA300AA120
igbt 1200v 600a
INVERTER FOR motor
Inverter Welder
sanrex IGBT
30v igbt gate ratings
welder inverter
Soft Recovery Diode
30V 600A igbt
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PDF
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GAE75AA120
Abstract: VCES1200V
Text: IGBT MODULE GAE75AA120 UL;E76102 （M） SanRex IGBT Module GAE75AA120 is designed for high speed, high current switching applications. This Module is electrically isolated and contains IGBT connected with clamp diode in series, soft recovery diode trr=0.1 s reverse connected across
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GAE75AA120
E76102
GAE75AA120
31MAX
32MAX
VCES1200V
IC75A
3-M5depth12mm
VCES1200V
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PDF
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sanrex IGBT
Abstract: GATE VOLTAGE FOR 300A ,600V IGBT diode 230 SWITCHING VOLTAGE FOR A 300A IGBT MODULE GAE300BA60 igbt 600V 300A IGBT 300A
Text: IGBT MODULE GAE300BA60 UL;E76102 M SanRex IGBT Module GAE300BA60 is designed for high speed, high current switching applications. This Module is electrically isolated and contains IGBT connected with clamp diode in series, soft recovery diode trr=0.1 s reverse connected across
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GAE300BA60
E76102
GAE300BA60
sanrex IGBT
GATE VOLTAGE FOR 300A ,600V IGBT
diode 230
SWITCHING VOLTAGE FOR A 300A IGBT MODULE
igbt 600V 300A
IGBT 300A
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GAE100BA60
Abstract: No abstract text available
Text: IGBT MODULE GAE100BA60 UL;E76102 （M） SanRex IGBT Module GAE100BA60 is designed for high speed, high current switching applications. This Module is electrically isolated and contains IGBT connected with clamp diode in series, soft recovery diode trr=0.1 s reverse connected across
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GAE100BA60
E76102
GAE100BA60
31MAX
32MAX
VCES600V
IC100A
3-M5depth12mm
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PDF
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igbt module
Abstract: sanrex IGBT GAE75AA120
Text: IGBT MODULE GAE75AA120 UL;E76102 M SanRex IGBT Module GAE75AA120 is designed for high speed, high current switching applications. This Module is electrically isolated and contains IGBT connected with clamp diode in series, soft recovery diode trr=0.1 s reverse connected across
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Original
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GAE75AA120
E76102
GAE75AA120
igbt module
sanrex IGBT
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PDF
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GAE100AA120
Abstract: No abstract text available
Text: IGBT MODULE GAE100AA120 UL;E76102 M SanRex IGBT Module GAE100AA120 is designed for high speed, high current switching applications. This Module is electrically isolated and contains IGBT connected with clamp diode in series, soft recovery diode trr=0.1 s reverse connected across
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GAE100AA120
E76102
GAE100AA120
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PDF
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4MBI300VG-120R-50
Abstract: 4MBI300VG120 4MBI300 chip Express t2 4mbi300vg 4MBI300VG-120 igbt 600V 300A
Text: / 4MBI300VG-120R-50 IGBT Modules IGBT MODULE V series 1200V / 300A / IGBT, 600V/300A/RB-IGBT, 4 in one package Features Higher Efficiency Optimized A (T-type) -3 level circuit Low inductance module structure
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4MBI300VG-120R-50
4MBI300VG-120R-50
4MBI300VG120
4MBI300
chip Express t2
4mbi300vg
4MBI300VG-120
igbt 600V 300A
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PDF
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600V 200A igbt MOTOR SPEED CONTROL
Abstract: GAE200BA60 diode 230 IGBT 600V 200A
Text: IGBT MODULE GAE200BA60 UL;E76102 M SanRex IGBT Module GAE200BA60 is designed for high speed, high current switching applications. This Module is electrically isolated and contains IGBT connected with clamp diode in series, soft recovery diode trr=0.1 s reverse connected across
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GAE200BA60
E76102
GAE200BA60
600V 200A igbt MOTOR SPEED CONTROL
diode 230
IGBT 600V 200A
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PDF
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GAE200AA120
Abstract: sanrex IGBT
Text: IGBT MODULE GAE200AA120 UL;E76102 M SanRex IGBT Module GAE200AA120 is designed for high speed, high current switching applications. This Module is electrically isolated and contains IGBT connected with clamp diode in series, soft recovery diode trr=0.1 s reverse connected across
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GAE200AA120
E76102
GAE200AA120
sanrex IGBT
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PDF
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GAE100BA60
Abstract: GATE VOLTAGE FOR 100A ,300V IGBT
Text: IGBT MODULE GAE100BA60 UL;E76102 M SanRex IGBT Module GAE100BA60 is designed for high speed, high current switching applications. This Module is electrically isolated and contains IGBT connected with clamp diode in series, soft recovery diode trr=0.1 s reverse connected across
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GAE100BA60
E76102
GAE100BA60
GATE VOLTAGE FOR 100A ,300V IGBT
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PDF
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200n60
Abstract: 20N30 n60c 50N60 7N60B IC IGBT 25N120 IC600 80n60 60n60 igbt 25N120
Text: HiPerFASTTM IGBT G-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode HiPerFASTTM IGBT G-Series Contents IGBT VCES V 300 Low VCE(sat) 600 1000 TO-220 TO-263 TO-247 IC VCE(sat) (IXGP) (IXGA) (IXGH) max TC = 25 °C TC=25 °C A V 40 56 60 40
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PLUS247
20N30
28N30
30N30
40N30
31N60
38N60
41N60
60N60
O-264
200n60
20N30
n60c
50N60
7N60B
IC IGBT 25N120
IC600
80n60
60n60 igbt
25N120
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PDF
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GAE100AA120
Abstract: diode 6-7
Text: IGBT MODULE GAE100AA120 UL;E76102 （M） SanRex IGBT Module GAE100AA120 is designed for high speed, high current switching applications. This Module is electrically isolated and contains IGBT connected with clamp diode in series, soft recovery diode trr=0.1 s reverse connected across
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Original
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GAE100AA120
E76102
GAE100AA120
31MAX
32MAX
VCES1200V
IC100A
3-M5depth12mm
diode 6-7
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PDF
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