BUSBAR calculation
Abstract: BUSBAR calculation datasheet rogers busbar Ansys led A copper busbar voltage drop i300a busbar design ansys BUSBAR Fz2400
Text: Thermal Properties of Power Terminals in High Power IGBT Modules A. Cosaert1, M. Beulque1, M. Wölz2, O. Schilling2, H. Sandmann2, R. Spanke2, K. Appelhoff2 1 2 Rogers NV, Gent, Belgium eupec GmbH, Warstein, Germany Abstract Power dissipation in the leads of IGBT modules has to be taken into account for modern inverter design. This is
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ZENERDIODEN
Abstract: AN2002-07
Text: APPLICATION NOTE Datum: 2002-06-10 Seite 1 von 2 AN-Nummer: AN2002-07 Montagehinweise für IHM & IHV Module Handhabung IGBTs sind elektrostatisch empfindliche Bauelemente. Während des Einbaus der Module sind Gate und Hilfsemitter durch eine leitende Verbindung kurzzuschließen, um eine Zerstörung durch statische
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AN2002-07
ZENERDIODEN
AN2002-07
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140X130
Abstract: AN2002-07 module RBSOA
Text: APPLICATION NOTE Date: 2002-06-10 Page 1 of 2 AN-Number: AN2002-07 Mounting instructions for IHM & IHV modules handling IGBTs are electrostatic-sensitive devices. While handling the modules, gate and auxiliary emitter terminals must be short-circuited by a metal
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AN2002-07
140X130
AN2002-07
module RBSOA
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wpc8763ldg
Abstract: RTM875T-606 CX20561 toshiba satellite l50 WPC8763 fds8884 OZ129T winbond wpce775 isl88731 CX20561-12Z
Text: 1 2 3 4 5 6 7 8 TE1 Block Diagram PCB STACK UP LAYER 1 : TOP LAYER 2 : SGND A HDMI HDMI Transmitter Sil1392 Page 21 LAYER 3 : IN1 Azalia CLOCK GENERATOR Intel CK505 ICS9LPR363 Page 21 Merom LAYER 4 : IN2 Page 2 A 35W CRT Page 20 LAYER 5 : VCC Page 3,4 LAYER 6 : BOT
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Sil1392
CK505
ICS9LPR363
667/800MHZ)
OZ129T)
RJ45/USB
CX20561)
wpc8763ldg
RTM875T-606
CX20561
toshiba satellite l50
WPC8763
fds8884
OZ129T
winbond wpce775
isl88731
CX20561-12Z
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FZ1200r16KF4
Abstract: siemens igbt IGBT FZ1200 IGBT Power Module siemens ag eupec fz1200 FZ1200R16 FZ1200R17KF6 driver igbt SIEMENS 7400A SCHEMATIC POWER SUPPLY WITH IGBTS
Text: Technical Improvements in 1700V High Power Modules with Rated Currents up to 2400A“ * O. Schilling, F. Auerbach , R. Spanke, M. Hierholzer eupec GmbH, Max Planck Str. 1, D-59581 Warstein-Belecke * Siemens AG, Semiconductor-PS, Balanstraße 73, D-81541 Munich
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D-59581
D-81541
FZ1200r16KF4
siemens igbt
IGBT FZ1200
IGBT Power Module siemens ag
eupec fz1200
FZ1200R16
FZ1200R17KF6
driver igbt SIEMENS
7400A
SCHEMATIC POWER SUPPLY WITH IGBTS
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CX20561
Abstract: cx20561-12z toshiba satellite c655 toshiba satellite c640 cx2056 wpc8763ldg 31TE1MB01N0 intel 4965AG g909 WPCE775
Text: 1 2 3 4 5 6 7 8 VER : E3D Description 31TE1MB0010 TE1M MB PM45/RB/MS WO CPU 31TE1MB0120 TE1M MB(PM45/MAIN/RB/HDMI/CIR)WO CPU 31TE1MB0130 TE1M MB(GM45/EXP/NO CIR/MS)WO CPU 31TE1MB0140 TE1M MB(GM45/GS/EXP/MS)WO CPU 31TE1MB0170 TE1M MB(GM45/GS/EXP/LC)WO CPU PENRYN
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31TE1MB0010
31TE1MB0120
31TE1MB0130
31TE1MB0140
PM45/RB/MS
PM45/MAIN/RB/HDMI/CIR
GM45/EXP/NO
GM45/GS/EXP/MS
GM45/GS/EXP/LC
GM45/HDMI/EXP/MS
CX20561
cx20561-12z
toshiba satellite c655
toshiba satellite c640
cx2056
wpc8763ldg
31TE1MB01N0
intel 4965AG
g909
WPCE775
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Eupec Power Semiconductors
Abstract: AN2002-07 module RBSOA
Text: APPLICATION NOTE Date: 02.12.13 Page 1 of 3 AN-Number: AN2002-13 replaces AN2002-07 Mounting instructions for IHM & IHV modules • handling IGBTs are electrostatic-sensitive devices. While handling the modules, gate and auxiliary emitter terminals must be short-circuited by a metal
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AN2002-13
AN2002-07)
D-59581
Eupec Power Semiconductors
AN2002-07
module RBSOA
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Untitled
Abstract: No abstract text available
Text: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules DD1000S33HE3 IHM-BModul IHM-Bmodule VCES = 3300V IC nom = 1000A / ICRM = 2000A TypischeAnwendungen • Mittelspannungsantriebe • Motorantriebe • Traktionsumrichter • USV-Systeme
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DD1000S33HE3
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Untitled
Abstract: No abstract text available
Text: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules DD500S33HE3 IHM-BModul IHM-Bmodule VCES = 3300V IC nom = 500A / ICRM = 1000A TypischeAnwendungen • Mittelspannungsantriebe • Motorantriebe • Traktionsumrichter • USV-Systeme
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DD500S33HE3
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1287-standard
Abstract: SiC IGBT High Power Modules eupec igbt 3.3kv failure analysis IGBT PCIM 96 igbt failure fit HIGH VOLTAGE DIODE 3.3kv "DATA MATRIX" EUPEC
Text: Further Improvements in the Reliability of IGBT Modules Thomas Schütze, Hermann Berg, Martin Hierholzer eupec GmbH & Co. KG Max-Planck-Straße 5 59581 Warstein, Germany Abstract- This paper gives a survey of the measures and the resulting improvements of IGBT module reliability
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DD1000S33HE3
Abstract: No abstract text available
Text: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules DD1000S33HE3 IHM-BModul IHM-Bmodule VorläufigeDaten/PreliminaryData VCES = 3300V IC nom = 1000A / ICRM = 2000A TypischeAnwendungen • Mittelspannungsantriebe • Motorantriebe
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DD1000S33HE3
DD1000S33HE3
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Untitled
Abstract: No abstract text available
Text: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules DD1000S33HE3 IHM-BModul IHM-Bmodule VCES = 3300V IC nom = 1000A / ICRM = 2000A TypischeAnwendungen • Mittelspannungsantriebe • Motorantriebe • Traktionsumrichter • USV-Systeme
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DD1000S33HE3
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Untitled
Abstract: No abstract text available
Text: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules DD1000S33HE3 IHM-BModul IHM-Bmodule VorläufigeDaten/PreliminaryData VCES = 3300V IC nom = 1000A / ICRM = 2000A TypischeAnwendungen • Mittelspannungsantriebe • Motorantriebe
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DD1000S33HE3
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Untitled
Abstract: No abstract text available
Text: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules DD500S33HE3 IHM-BModul IHM-Bmodule VCES = 3300V IC nom = 500A / ICRM = 1000A TypischeAnwendungen • Mittelspannungsantriebe • Motorantriebe • Traktionsumrichter • USV-Systeme
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DD500S33HE3
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Untitled
Abstract: No abstract text available
Text: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules DD500S33HE3 IHM-BModul IHM-Bmodule VorläufigeDaten/PreliminaryData VCES = 3300V IC nom = 500A / ICRM = 1000A TypischeAnwendungen • Mittelspannungsantriebe • Motorantriebe • Traktionsumrichter
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DD500S33HE3
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infineon power cycling igbt3
Abstract: IGBT4 snap-off diode infineon igbt3 1200v infineon power cycling curves infineon igbt4 1200v Measurement of stray inductance for IGBT 2003N igbt simulation IGBT2
Text: 1200V IGBT4 -High Power- a new Technology Generation with Optimized Characteristics for High Current Modules M. Bäßler1, P.Kanschat1, F.Umbach2, C. Schaeffer3 1 Infineon Technologies AG, Max Planck Str.5, D-59581 Warstein Germany, Tel +49-2902-764-2290,
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D-59581
200V-Trench-
1998-Kyoto
2003N
00V-IGBT³
2004-N
infineon power cycling igbt3
IGBT4
snap-off diode
infineon igbt3 1200v
infineon power cycling curves
infineon igbt4 1200v
Measurement of stray inductance for IGBT
igbt simulation
IGBT2
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Untitled
Abstract: No abstract text available
Text: co CO O 1 0 '* 00 o s 10 CM r- 10 0) 5 W 'S c C CO CD £ +w CO Ï to •c e IHM o CD * 3 * *i ? - O T- 3 00 Ü c Item Material Finish © PBT+15%GF BLACK BRASS NICKEL PLATED P-BRONZE NICKEL PLATED 2 i Tolerances REV. DATE DESCRIPTION REV. BY CHK. BY DRAWN BY
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2002/95/EC
KLDX-P-0202-B-LT
P-0202-B-LT
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ic tea 810
Abstract: MC10190
Text: MOTOROLA M E C L UK QUAD MST TO MECL 10.000 TRANSLATOR The MC101090 is a quad translator for interfacing from IBM MST-type logic signals to standard MECL 10,000 logic levels. This circuit features differential inputs fo r high noise environments or may be used w ith single ended lines by tieing one of the inputs
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MC101090
MC10190
MC10190
ic tea 810
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99V0
Abstract: vsd9a t 99v0
Text: po u ju j p e/ 5 6 9 8 £ cl iu o/ e u j O L ]/ S698£ d 0 L : 00 ; 6 0 bGÀVW GO L A3d L do 13 3 H 5 9 N I M 3 1V 0 S I 0 0 9 0 X ¥ d Q £ ¿ ¿ 0 0 o N iH v a a 3Q03 1H 9 I3 M 39V0 03dS 8A 96 3HVN AON N O U V O IId d V osds lo n a o a a s a N o a t
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66-AVN-
SS33Nn
d31VH
39V93
999NVHN9
Ad0991V9
A99H9SSV
99NV9
S330H
66-0/L0-V
99V0
vsd9a
t 99v0
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MC10190
Abstract: No abstract text available
Text: MOTOROLA MC10190 QUAD MST TO MECL 10,000 TRANSLATOR QUAD MST TO MECL 10,000 TRANSLATOR T h e M C 10109Q is a q u a d tra n s la to r fo r in te rfacing fro m IB M M S T -ty p e logic signals to stan d a rd M E C L 1 0 ,000 logic levels. This circuit fe a tu re s d iffe re n tia l inputs fo r high noise e n v iro n m e n ts or
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MC10190
10109Q
MC10190
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Untitled
Abstract: No abstract text available
Text: -7 P ° , 3P 180' 4P 210' 5P 180' 5P 240' 5P 360' 6P 240' 7P 270' 8P 270' 2 8 . 3 ± 0.1 4 .6 ± 0.1 1 _ d_. . . M r H - 10.5±0.05 i a 2.0±0.05 i . . t 3.0±0.1 1 i ♦ 13.1±0.1 1 Jtjqr1 10.7±0.0 5 in ♦ 13.10±O.15 — 1 fs 1i n CO 10.7±0.1 I— 1.25±0.0£
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46000ser
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i12500
Abstract: sonion industrial
Text: 3P 180' 4P 210' 5P 180' 5P 240' 5P 360' 6P 240' 7P 270' 8P 270' 28.3±0.1 4 .6 ± 0.1 13.1±0.1 10.5±0.05 kO 1 p.7±o.q in u n in n ru n u n DnD [u juD üM iu iu ü u iju ijij 13 .10 ± O .15 a t_ T B 2.0±0.05 o +1 & to CD 10.7±0.1 3.0±0.1 i—1.25±0.05
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46000ser
i12500
sonion industrial
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Untitled
Abstract: No abstract text available
Text: I Antorderunqsstufe Firmensiqnet Dote Code r class ' Z 3d V lim i "I 1 iß II J 1 xxxxxxx INd3 / y uüuuu 2 10 x 2 -20 EE-Zane für durchkontaktierte Lacher 0O.6±O.O5 4 x 2 - 8 com pliant za rie fo r thru ta le 0 0 .6 *0 .0 5 * 0.2 Ebene - Le ve l 3 BestückungspLon - contact la yo u t
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Untitled
Abstract: No abstract text available
Text: 13 12 11 10 -CENTERLINE OF PIN IN AREA SHOWN DIM. A NOT TO VARY FROM CENTERLINE OF PIN AT DATUM CKTS. NO. OF -D- BY • D IM .B MORE THAN .0 0 8 IN ANY DIRECTION DIM. B o - SEE D E TAIL 3 (2.54±.05 ( .I00±.002 ( TYP. BETWEEN ANY TWO CONSECUTIVE CKTS AT DATUM
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SDA-4030-002
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