ON SEMICONDUCTOR J122
Abstract: J730 512 j122 MHz-2170 EMVY500ADA221MJA0G ATC600F1R2BT250XT 8383d 146 J122
Text: Freescale Semiconductor Technical Data Document Number: MRF8HP21130H Rev. 0, 4/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA and LTE base station applications with frequencies from 2110 to 2170 MHz. Can be used in Class AB and Class C for all typical
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MRF8HP21130H
MRF8HP2113ficers,
MRF8HP21130HR3
MRF8HP21130HSR3
MRF8HP21130H
ON SEMICONDUCTOR J122
J730
512 j122
MHz-2170
EMVY500ADA221MJA0G
ATC600F1R2BT250XT
8383d
146 J122
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LTE impedance tuner
Abstract: MRF8HP21080 CW12010T0100G MRF8HP21080HR3 J952 j179 j934 CW12010T0100GBK J9-22 j922
Text: Freescale Semiconductor Technical Data Document Number: MRF8HP21080H Rev. 0, 6/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA and LTE base station applications with frequencies from 2110 to 2170 MHz. Can be used in Class AB and Class C for all typical
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MRF8HP21080H
MRF8HP21080HR3
MRF8HP21080HSR3
LTE impedance tuner
MRF8HP21080
CW12010T0100G
J952
j179
j934
CW12010T0100GBK
J9-22
j922
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF8HP21130H Rev. 0, 4/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA and LTE base station applications with frequencies from 2110 to 2170 MHz. Can be used in Class AB and Class C for all typical
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MRF8HP21130H
14mployees,
MRF8HP21130HR3
MRF8HP21130HSR3
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF8HP21080H Rev. 0, 6/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA and LTE base station applications with frequencies from 2110 to 2170 MHz. Can be used in Class AB and Class C for all typical
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MRF8HP21080H
14mployees,
MRF8HP21080HR3
MRF8HP21080HSR3
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SEMICONDUCTOR J598
Abstract: j598 ATC800B0R8BT500XT ATC800B J739
Text: Freescale Semiconductor Technical Data Document Number: MRF8S21172H Rev. 0, 3/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8S21172HR3 MRF8S21172HSR3 Designed for W-CDMA and LTE base station applications with frequencies
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MRF8S21172H
MRF8S21172HR3
MRF8S21172HSR3
MRF8S21172H
SEMICONDUCTOR J598
j598
ATC800B0R8BT500XT
ATC800B
J739
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SEMICONDUCTOR J598
Abstract: j598 j325 J280 J895 J739 Multicomp capacitor ATC800B0R8BT500XT
Text: Document Number: MRF8S21172H Rev. 1, 3/2012 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8S21172HR3 MRF8S21172HSR3 Designed for W-CDMA and LTE base station applications with frequencies
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MRF8S21172H
MRF8S21172HR3
MRF8S21172HSR3
2110-mployees,
MRF8S21172H
SEMICONDUCTOR J598
j598
j325
J280
J895
J739
Multicomp capacitor
ATC800B0R8BT500XT
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j598
Abstract: No abstract text available
Text: Document Number: MRF8S21172H Rev. 1, 3/2012 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8S21172HR3 MRF8S21172HSR3 Designed for W-CDMA and LTE base station applications with frequencies
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MRF8S21172H
MRF8S21172HR3
MRF8S21172HSR3
MRF8S21172HR3
j598
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Untitled
Abstract: No abstract text available
Text: Document Number: MRF8S21172H Rev. 1, 3/2012 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8S21172HR3 MRF8S21172HSR3 Designed for W-CDMA and LTE base station applications with frequencies
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MRF8S21172H
MRF8S21172HR3
MRF8S21172HSR3
MRF8S21172HR3
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GSC356-HYB2500
Abstract: ATC600F1R0JT250XT atc600f100jt250xt J930 MRF8P23080HR3 ATC600F0R8JT250XT
Text: Freescale Semiconductor Technical Data Document Number: MRF8P23080H Rev. 1, 11/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA and LTE base station applications with frequencies from 2300 to 2620 MHz. Can be used in Class AB and Class C for all typical
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MRF8P23080H
MRF8P23080HR3
MRF8P23080HSR3
GSC356-HYB2500
ATC600F1R0JT250XT
atc600f100jt250xt
J930
ATC600F0R8JT250XT
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GSC356-HYB2500
Abstract: GRM21BR71H105KA12 ATC600F100JT250XT MRF8P23080H J930 ATC600F5R6JT250XT J935 ATC600F180
Text: Freescale Semiconductor Technical Data Document Number: MRF8P23080H Rev. 0, 5/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA and LTE base station applications with frequencies from 2300 to 2400 MHz. Can be used in Class AB and Class C for all typical
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MRF8P23080H
MRF8P23080HR3
MRF8P23080HSR3
GSC356-HYB2500
GRM21BR71H105KA12
ATC600F100JT250XT
MRF8P23080H
J930
ATC600F5R6JT250XT
J935
ATC600F180
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF8P23080H Rev. 1, 11/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA and LTE base station applications with frequencies from 2300 to 2620 MHz. Can be used in Class AB and Class C for all typical
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MRF8P23080H
MRF8P23080HR3
MRF8P23080HSR3
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF8P26080H Rev. 0, 12/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8P26080HR3 MRF8P26080HSR3 Designed for W-CDMA and LTE base station applications with frequencies
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MRF8P26080H
MRF8P26080HR3
MRF8P26080HSR3
MRF8P26080HR3
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GSC356-HYB2500
Abstract: MRF8P26080 LTE base station GRM32DR71H335KA MRF8P26080HS AN1955 atc600f ATC600F220JT250XT 2595MHz J625
Text: Freescale Semiconductor Technical Data Document Number: MRF8P26080H Rev. 0, 12/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8P26080HR3 MRF8P26080HSR3 Designed for W-CDMA and LTE base station applications with frequencies
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MRF8P26080H
MRF8P26080HR3
MRF8P26080HSR3
MRF8P26080HR3
GSC356-HYB2500
MRF8P26080
LTE base station
GRM32DR71H335KA
MRF8P26080HS
AN1955
atc600f
ATC600F220JT250XT
2595MHz
J625
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LTE antenna design
Abstract: LTE rf front end power amplifier transceiver 4G LTE rffe LTE RF Multiband Ericsson Base Station 700mhz SP10T Peregrine Ericsson microwave antenna Ericsson 3G or LTE Module LTE impedance tuner
Text: RF & Microwave Designline October 2010 RF front end adapts for increased mobile data demand Tero Ranta, Duncan Pilgrim & Richard Whatley, Peregrine Semiconductor The industry is predicting that data volumes could reach 2.7 exabytes per year1 in 2010 and that
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700MHz
LTE antenna design
LTE rf front end
power amplifier transceiver 4G LTE
rffe
LTE RF Multiband
Ericsson Base Station 700mhz
SP10T Peregrine
Ericsson microwave antenna
Ericsson 3G or LTE Module
LTE impedance tuner
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Untitled
Abstract: No abstract text available
Text: TDA18275 Hybrid analog and digital silicon tuner for terrestrial and cable TV reception Rev. 1 — 10 July 2013 Preliminary short data sheet 1. General description The TDA18275 is a high performance silicon tuner designed for terrestrial and cable TV reception for both analog and digital broadcasts.
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TDA18275
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Untitled
Abstract: No abstract text available
Text: TDA18275 Hybrid analog and digital silicon tuner for terrestrial and cable TV reception Rev. 2 — 14 October 2013 Product short data sheet 1. General description The TDA18275 is a high performance silicon tuner designed for terrestrial and cable TV reception for both analog and digital broadcasts.
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TDA18275
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4x4 mimo
Abstract: No abstract text available
Text: Agilent N7109A Data Sheet Multi-Channel Signal Analyzer DISCOVER the Alternatives. . Agilent MODULAR Products AD APT A S M IM O T ES T IN G E V O L V E S OV ERV I EW F eatures In the development of next-generation wireless technologies, MIMO measurements are becoming an essential
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N7109A
N7109A
5990-6732EN
4x4 mimo
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DVB-T2 demodulator
Abstract: TDA18274 sot995 HLQFN48R DVB-T2 LTE impedance tuner dvb-t2 tuner DVB-T2 Tuner Demodulator
Text: TDA18274 Hybrid analog and digital silicon tuner for terrestrial and cable TV reception Rev. 1 — 11 February 2013 Product short data sheet 1. General description The TDA18274 is a high performance silicon tuner designed for terrestrial and cable TV reception for both analog and digital signals.
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TDA18274
TDA18274
DVB-T2 demodulator
sot995
HLQFN48R
DVB-T2
LTE impedance tuner
dvb-t2 tuner
DVB-T2 Tuner Demodulator
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external tv tuner
Abstract: dvb-t2 tuner
Text: TDA18214 Silicon tuner for digital terrestrial and cable TV reception Rev. 1 — 13 July 2012 Preliminary short data sheet 1. General description The TDA18214AHN and TDA18214HN are high performance silicon tuners designed for digital terrestrial and digital cable TV reception.
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TDA18214
TDA18214AHN
TDA18214HN
TDA18214
external tv tuner
dvb-t2 tuner
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external tv tuner
Abstract: DVB-T2 box DVB-T2 demodulator NXP Power Management ICs
Text: TDA18214 Silicon tuner for digital terrestrial and cable TV reception Rev. 2 — 11 February 2013 Product short data sheet 1. General description The TDA18214AHN and TDA18214HN are high performance silicon tuners designed for digital terrestrial and digital cable TV reception.
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TDA18214
TDA18214AHN
TDA18214HN
TDA18214
external tv tuner
DVB-T2 box
DVB-T2 demodulator
NXP Power Management ICs
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Untitled
Abstract: No abstract text available
Text: 19-1256: Rev J; 7/97 V M /X IA 1 Dì ree t-Con version Tim er 1C fa r D ig ita l DBS A pplications The MAX2102 d irectly tunes L-band signals to base band using a broadband IIQ downconverter. Operating fre q u e n c y ra n g e s p a n s fro m at le a s t 9 5 0 M H z to
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MAX2102f
MAX2102
2150MHz.
NS013
MS013-XX
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Untitled
Abstract: No abstract text available
Text: y k iy jx iv k i D i r e c t - C o n v e r s i o n T u n e r IC for D igital DBS A p p lic a tio n s Description direct-conversion tuner IC d ire c t-b ro a d c a s t satellite units. Its direct-conversion cost com pared to devices _F e a t u r e s
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950MHz
2150MHz
MAX2102
2150MHz.
MS013
102mm
013-XX
MAX2102
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DP 704c
Abstract: UPD1704C ppt on 14 segment display D1937 UPD1704C-011 UPD1704 PD1937C PD-1704 TUNING FM RADIO RECEIVER DEYING
Text: M O S D IG ITA L INTEGRATED C IR C U IT / i P D I 7 4 C - 0 PLL F R E Q U E N C Y S Y N T H E S IZ E R A N D C O N T R O L L E R FO R A M / F M T U N E R The /iPD1704C-011 is a single chip AM and FM band PLL frequency synthesizer plus controller for the U.S.A.,
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uPD1704C-011
24-Hour
iiPD1987C
iPD1937C
iPD1704C-011
/PD1704C-011
//PB553AC
/uPD1704C-011
//PD1986C.
DP 704c
UPD1704C
ppt on 14 segment display
D1937
UPD1704
PD1937C
PD-1704
TUNING FM RADIO RECEIVER
DEYING
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NE545SNAS1
Abstract: lm 9805
Text: INTEGRATED CIRCUITS TDA9808 Single standard VIF-PLL with QSS-IF and FM-PLL demodulator Product specification Supersedes data of 1998 May 06 File under Integrated Circuits, IC02 Philips Sem iconductors 1999 Jan 18 PHILIPS Philips Semiconductors Product specification
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TDA9808
TDA9808
DIP20)
SCA61
545004/750/05/pp36
NE545SNAS1
lm 9805
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