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    IMPEDANCE TUNER LTE Search Results

    IMPEDANCE TUNER LTE Result Highlights (1)

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    ON SEMICONDUCTOR J122

    Abstract: J730 512 j122 MHz-2170 EMVY500ADA221MJA0G ATC600F1R2BT250XT 8383d 146 J122
    Text: Freescale Semiconductor Technical Data Document Number: MRF8HP21130H Rev. 0, 4/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA and LTE base station applications with frequencies from 2110 to 2170 MHz. Can be used in Class AB and Class C for all typical


    Original     		PDF MRF8HP21130H MRF8HP2113ficers, MRF8HP21130HR3 MRF8HP21130HSR3 MRF8HP21130H ON SEMICONDUCTOR J122 J730 512 j122 MHz-2170 EMVY500ADA221MJA0G ATC600F1R2BT250XT 8383d 146 J122

    LTE impedance tuner

    Abstract: MRF8HP21080 CW12010T0100G MRF8HP21080HR3 J952 j179 j934 CW12010T0100GBK J9-22 j922
    Text: Freescale Semiconductor Technical Data Document Number: MRF8HP21080H Rev. 0, 6/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA and LTE base station applications with frequencies from 2110 to 2170 MHz. Can be used in Class AB and Class C for all typical


    Original     		PDF MRF8HP21080H MRF8HP21080HR3 MRF8HP21080HSR3 LTE impedance tuner MRF8HP21080 CW12010T0100G J952 j179 j934 CW12010T0100GBK J9-22 j922

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF8HP21130H Rev. 0, 4/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA and LTE base station applications with frequencies from 2110 to 2170 MHz. Can be used in Class AB and Class C for all typical


    Original     		PDF MRF8HP21130H 14mployees, MRF8HP21130HR3 MRF8HP21130HSR3

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF8HP21080H Rev. 0, 6/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA and LTE base station applications with frequencies from 2110 to 2170 MHz. Can be used in Class AB and Class C for all typical


    Original     		PDF MRF8HP21080H 14mployees, MRF8HP21080HR3 MRF8HP21080HSR3

    SEMICONDUCTOR J598

    Abstract: j598 ATC800B0R8BT500XT ATC800B J739
    Text: Freescale Semiconductor Technical Data Document Number: MRF8S21172H Rev. 0, 3/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8S21172HR3 MRF8S21172HSR3 Designed for W-CDMA and LTE base station applications with frequencies


    Original     		PDF MRF8S21172H MRF8S21172HR3 MRF8S21172HSR3 MRF8S21172H SEMICONDUCTOR J598 j598 ATC800B0R8BT500XT ATC800B J739

    SEMICONDUCTOR J598

    Abstract: j598 j325 J280 J895 J739 Multicomp capacitor ATC800B0R8BT500XT
    Text: Document Number: MRF8S21172H Rev. 1, 3/2012 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8S21172HR3 MRF8S21172HSR3 Designed for W-CDMA and LTE base station applications with frequencies


    Original     		PDF MRF8S21172H MRF8S21172HR3 MRF8S21172HSR3 2110-mployees, MRF8S21172H SEMICONDUCTOR J598 j598 j325 J280 J895 J739 Multicomp capacitor ATC800B0R8BT500XT

    j598

    Abstract: No abstract text available
    Text: Document Number: MRF8S21172H Rev. 1, 3/2012 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8S21172HR3 MRF8S21172HSR3 Designed for W-CDMA and LTE base station applications with frequencies


    Original     		PDF MRF8S21172H MRF8S21172HR3 MRF8S21172HSR3 MRF8S21172HR3 j598

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MRF8S21172H Rev. 1, 3/2012 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8S21172HR3 MRF8S21172HSR3 Designed for W-CDMA and LTE base station applications with frequencies


    Original     		PDF MRF8S21172H MRF8S21172HR3 MRF8S21172HSR3 MRF8S21172HR3

    GSC356-HYB2500

    Abstract: ATC600F1R0JT250XT atc600f100jt250xt J930 MRF8P23080HR3 ATC600F0R8JT250XT
    Text: Freescale Semiconductor Technical Data Document Number: MRF8P23080H Rev. 1, 11/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA and LTE base station applications with frequencies from 2300 to 2620 MHz. Can be used in Class AB and Class C for all typical


    Original     		PDF MRF8P23080H MRF8P23080HR3 MRF8P23080HSR3 GSC356-HYB2500 ATC600F1R0JT250XT atc600f100jt250xt J930 ATC600F0R8JT250XT

    GSC356-HYB2500

    Abstract: GRM21BR71H105KA12 ATC600F100JT250XT MRF8P23080H J930 ATC600F5R6JT250XT J935 ATC600F180
    Text: Freescale Semiconductor Technical Data Document Number: MRF8P23080H Rev. 0, 5/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA and LTE base station applications with frequencies from 2300 to 2400 MHz. Can be used in Class AB and Class C for all typical


    Original     		PDF MRF8P23080H MRF8P23080HR3 MRF8P23080HSR3 GSC356-HYB2500 GRM21BR71H105KA12 ATC600F100JT250XT MRF8P23080H J930 ATC600F5R6JT250XT J935 ATC600F180

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF8P23080H Rev. 1, 11/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA and LTE base station applications with frequencies from 2300 to 2620 MHz. Can be used in Class AB and Class C for all typical


    Original     		PDF MRF8P23080H MRF8P23080HR3 MRF8P23080HSR3

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF8P26080H Rev. 0, 12/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8P26080HR3 MRF8P26080HSR3 Designed for W-CDMA and LTE base station applications with frequencies


    Original     		PDF MRF8P26080H MRF8P26080HR3 MRF8P26080HSR3 MRF8P26080HR3

    GSC356-HYB2500

    Abstract: MRF8P26080 LTE base station GRM32DR71H335KA MRF8P26080HS AN1955 atc600f ATC600F220JT250XT 2595MHz J625
    Text: Freescale Semiconductor Technical Data Document Number: MRF8P26080H Rev. 0, 12/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8P26080HR3 MRF8P26080HSR3 Designed for W-CDMA and LTE base station applications with frequencies


    Original     		PDF MRF8P26080H MRF8P26080HR3 MRF8P26080HSR3 MRF8P26080HR3 GSC356-HYB2500 MRF8P26080 LTE base station GRM32DR71H335KA MRF8P26080HS AN1955 atc600f ATC600F220JT250XT 2595MHz J625

    LTE antenna design

    Abstract: LTE rf front end power amplifier transceiver 4G LTE rffe LTE RF Multiband Ericsson Base Station 700mhz SP10T Peregrine Ericsson microwave antenna Ericsson 3G or LTE Module LTE impedance tuner
    Text: RF & Microwave Designline October 2010 RF front end adapts for increased mobile data demand Tero Ranta, Duncan Pilgrim & Richard Whatley, Peregrine Semiconductor The industry is predicting that data volumes could reach 2.7 exabytes per year1 in 2010 and that


    Original     		PDF 700MHz LTE antenna design LTE rf front end power amplifier transceiver 4G LTE rffe LTE RF Multiband Ericsson Base Station 700mhz SP10T Peregrine Ericsson microwave antenna Ericsson 3G or LTE Module LTE impedance tuner

    Untitled

    Abstract: No abstract text available
    Text: TDA18275 Hybrid analog and digital silicon tuner for terrestrial and cable TV reception Rev. 1 — 10 July 2013 Preliminary short data sheet 1. General description The TDA18275 is a high performance silicon tuner designed for terrestrial and cable TV reception for both analog and digital broadcasts.


    Original     		PDF TDA18275 TDA18275

    Untitled

    Abstract: No abstract text available
    Text: TDA18275 Hybrid analog and digital silicon tuner for terrestrial and cable TV reception Rev. 2 — 14 October 2013 Product short data sheet 1. General description The TDA18275 is a high performance silicon tuner designed for terrestrial and cable TV reception for both analog and digital broadcasts.


    Original     		PDF TDA18275 TDA18275

    4x4 mimo

    Abstract: No abstract text available
    Text: Agilent N7109A Data Sheet Multi-Channel Signal Analyzer DISCOVER the Alternatives. . Agilent MODULAR Products AD APT A S M IM O T ES T IN G E V O L V E S OV ERV I EW F eatures In the development of next-generation wireless technologies, MIMO measurements are becoming an essential


    Original     		PDF N7109A N7109A 5990-6732EN 4x4 mimo

    DVB-T2 demodulator

    Abstract: TDA18274 sot995 HLQFN48R DVB-T2 LTE impedance tuner dvb-t2 tuner DVB-T2 Tuner Demodulator
    Text: TDA18274 Hybrid analog and digital silicon tuner for terrestrial and cable TV reception Rev. 1 — 11 February 2013 Product short data sheet 1. General description The TDA18274 is a high performance silicon tuner designed for terrestrial and cable TV reception for both analog and digital signals.


    Original     		PDF TDA18274 TDA18274 DVB-T2 demodulator sot995 HLQFN48R DVB-T2 LTE impedance tuner dvb-t2 tuner DVB-T2 Tuner Demodulator

    external tv tuner

    Abstract: dvb-t2 tuner
    Text: TDA18214 Silicon tuner for digital terrestrial and cable TV reception Rev. 1 — 13 July 2012 Preliminary short data sheet 1. General description The TDA18214AHN and TDA18214HN are high performance silicon tuners designed for digital terrestrial and digital cable TV reception.


    Original     		PDF TDA18214 TDA18214AHN TDA18214HN TDA18214 external tv tuner dvb-t2 tuner

    external tv tuner

    Abstract: DVB-T2 box DVB-T2 demodulator NXP Power Management ICs
    Text: TDA18214 Silicon tuner for digital terrestrial and cable TV reception Rev. 2 — 11 February 2013 Product short data sheet 1. General description The TDA18214AHN and TDA18214HN are high performance silicon tuners designed for digital terrestrial and digital cable TV reception.


    Original     		PDF TDA18214 TDA18214AHN TDA18214HN TDA18214 external tv tuner DVB-T2 box DVB-T2 demodulator NXP Power Management ICs

    Untitled

    Abstract: No abstract text available
    Text: 19-1256: Rev J; 7/97 V M /X IA 1 Dì ree t-Con version Tim er 1C fa r D ig ita l DBS A pplications The MAX2102 d irectly tunes L-band signals to base­ band using a broadband IIQ downconverter. Operating fre q u e n c y ra n g e s p a n s fro m at le a s t 9 5 0 M H z to


    OCR Scan     		PDF MAX2102f MAX2102 2150MHz. NS013 MS013-XX

    Untitled

    Abstract: No abstract text available
    Text: y k iy jx iv k i D i r e c t - C o n v e r s i o n T u n e r IC for D igital DBS A p p lic a tio n s Description direct-conversion tuner IC d ire c t-b ro a d c a s t satellite units. Its direct-conversion cost com pared to devices _F e a t u r e s


    OCR Scan     		PDF 950MHz 2150MHz MAX2102 2150MHz. MS013 102mm 013-XX MAX2102

    DP 704c

    Abstract: UPD1704C ppt on 14 segment display D1937 UPD1704C-011 UPD1704 PD1937C PD-1704 TUNING FM RADIO RECEIVER DEYING
    Text: M O S D IG ITA L INTEGRATED C IR C U IT / i P D I 7 4 C - 0 PLL F R E Q U E N C Y S Y N T H E S IZ E R A N D C O N T R O L L E R FO R A M / F M T U N E R The /iPD1704C-011 is a single chip AM and FM band PLL frequency synthesizer plus controller for the U.S.A.,


    OCR Scan     		PDF uPD1704C-011 24-Hour iiPD1987C iPD1937C iPD1704C-011 /PD1704C-011 //PB553AC /uPD1704C-011 //PD1986C. DP 704c UPD1704C ppt on 14 segment display D1937 UPD1704 PD1937C PD-1704 TUNING FM RADIO RECEIVER DEYING

    NE545SNAS1

    Abstract: lm 9805
    Text: INTEGRATED CIRCUITS TDA9808 Single standard VIF-PLL with QSS-IF and FM-PLL demodulator Product specification Supersedes data of 1998 May 06 File under Integrated Circuits, IC02 Philips Sem iconductors 1999 Jan 18 PHILIPS Philips Semiconductors Product specification


    OCR Scan     		PDF TDA9808 TDA9808 DIP20) SCA61 545004/750/05/pp36 NE545SNAS1 lm 9805