INTERNATIONAL RECTIFIER TRANSISTOR Search Results

INTERNATIONAL RECTIFIER TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

INTERNATIONAL RECTIFIER TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
IRGPC56 Abstract: No abstract text available Text: INTERNATIONAL RECTIFIER SbE D • 4fl5S45S OOlDbaT 1 ■ Data Sheet No. PD<9.662 T - 3^-63 \. INSULATED GATE BIPOLAR TRANSISTOR International Rectifier IRGPC56 600V, 7SA 600V, 75A, TO-247AC IGBT FEATURES International Rectifier’s IRG series of Insulated Gate	OCR Scan	4fl5S45S IRGPC56 O-247AC 554S2 0G10b43 IRGPC56	PDF
IRGPC46 Abstract: 10a 100v bipolar transistor mosfet induction heater S101 SS452 VQE 21 d Text: INTERNATIONAL RECTIFIER 4055452 OOlOba? 2 2bE D Data Sheet No. PD-9.663 INSULATED GATE BIPOLAR TRANSISTOR T- 3 °[ -03 International g*»]Rectifier IRGPC46 BOOV, BO A FEATURES 600V, 60A, TO-247AC IGBT International Rectifier’s IRG series of Insulated Gate	OCR Scan	O-247AC IRGPC46 10a 100v bipolar transistor mosfet induction heater S101 SS452 VQE 21 d	PDF
Q405 Abstract: vqe 24 d q405 transistor vqe 23 IRGBC26 TO220AB IGBT t303 3i03 a y8e Text: INTERNATIONAL RECTIFIER EbE D 4055455 00105=11 7 • Data Sheet No. PD-9.669 T-3Ì-03 International Usi Rectifier INSULATED GATE BIPOLAR TRANSISTOR IRGBCS6 600V, 19A FEATURES 600V, 19A, TO-220AB IGBT International Rectifier’s IR G series o f Insulated Gate	OCR Scan	Q01QS11 O-220AB Q405 vqe 24 d q405 transistor vqe 23 IRGBC26 TO220AB IGBT t303 3i03 a y8e	PDF
Untitled Abstract: No abstract text available Text: INTERNATIONAL RECTIFIER 2t>E D • HflSS4S2 QQ1DST7 S ■ Data Sheet No. PD-9.619A T-3^-03 INSULATED GATE BIPOLAR TRANSISTOR International I “ R !Rectifier IRGBC30 600V, S3A FEATURES 600V, 23A, TO-220AB IGBT International Rectifier’s IRG series of Insulated Gate	OCR Scan	IRGBC30 O-220AB 4aSS452 T-31-Ã	PDF
C528 transistors Abstract: C528 DIODE Text: INTERNATIONAL RECTIFIER 11E D \| 4ÖSS4SS 0000774 Data Sheet No. PD-9.445A INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER N-CHAIMNEL POWER MOSFETs TO-247AC PACKAGE 400 Volt, 0.30 Ohm HEXFET TO-247AC TO-3P Plastic Package R IRFP350 IRFP351 IRFP35S IRFP353	OCR Scan	075BV0SS C-527 IRFP350, IRFP351, IRFP352, IRFP353 T-39-15 C-528 C528 transistors C528 DIODE	PDF
c628 DIODE Abstract: diode c626 DIODE c629 diode c631 c632 DIODE c630 diode 3g50 irf 2030 IRFPG52 diode c630 Text: INTERNATIONAL RECTIFIER HE D I 4flSS4SE Data Sheet No. PD-9.543A INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER I 0 R REPETITIVE AVALANCHE AND dv/dt RATED HEXFETTRANSISTORS IRFPG5G IRFPG52 N-CHANNEL Product Summary 1000 Volt, 2.0 Ohm HEXFET TO-247AC TO-3P Plastic Package	OCR Scan	O-247AC C-631 IRFPG50, IRFPG52 T-39-15 C-632 c628 DIODE diode c626 DIODE c629 diode c631 c632 DIODE c630 diode 3g50 irf 2030 diode c630	PDF
irgpc50 Abstract: No abstract text available Text: INTERNATIONAL RECTIFIER 2bE D • 4655455 001Db33 fl ■ Data Sheet No. PD-9.664 T-3R-C>3 INSULATED GATE BIPOLAR TRANSISTOR International iI<?RlRectifier IRGPC50 600V, 55A 600V, 55A, TO-247AC IGBT FEATURES International Rectifier’s IRG series of Insulated Gate	OCR Scan	001Db33 IRGPC50 O-247AC 5S452 0D10b37 S54S2 0Q10b3Ã irgpc50	PDF
1117s Abstract: transistor wc 2C vqe 24 d TO220AB IGBT PHPI IRGBC36 Text: INTERNATIONAL RECTIFIER 4Ö5S4S2 00l0bQ3 T • 2t.E D Data Sheet No. PD-9.668 • 7 3*?-03 - - International ÜH Rectifier INSULATED GATE BIPOLAR TRANSISTOR BOOV, 34A FEATURES 600V, 34A, TO-220AB IGBT International R ectifier’s IR G series of Insulated G ate	OCR Scan	00l0bG3 O-220AB 1117s transistor wc 2C vqe 24 d TO220AB IGBT PHPI IRGBC36	PDF
TR C458 Abstract: transistors c458 IRFP040 IRFP042 C458 C C459 TIL 220 L740 c458 c455 Text: INTERNATIONAL RECTIFIER INTERNATIONAL H E D I 4Ö55455 T-39-13 Data Sheet No. PD-9.463A RECTIFIER INTERNATIONAL RECTIFIER HEXFET TRANSISTORS I« R IRFP040 IRFPQ42 N-CHANNEL POWER MOSFETs TO-S47AC PACKAGE Product Summary 50 Volt, 0.028 Ohm, HEXFET TO-247AC TO-3P Plastic Package	OCR Scan	T-39-13 IRFP040 O-S47AC O-247AC 05BVDSS C-459 IRFP040, IRFP042 T-39-13 C-460 TR C458 transistors c458 IRFP040 C458 C C459 TIL 220 L740 c458 c455	PDF
IRGAC50U Abstract: transistor G46 IGBT g48 ge 142 bt 34w Text: International Rectifier PD-9.726A IRGAC50U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den sities than comparable bipolar transistors, while	OCR Scan	pd926a IRGAC50U 001flb5G IRGAC50U transistor G46 IGBT g48 ge 142 bt 34w	PDF
irc30ud Abstract: IRGMC30U Text: International Ira]Rectifier PD-9.715A IRGMC30U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den sities than comparable bipolar transistors, while	OCR Scan	IRGMC30U IRGMC30UD IRGMC30UU MIL-S-19500 O-254 ir*c30ud IRGMC30U	PDF
g371 Abstract: IRFF330 IRFF331 IRFF332 IRFF333 510 MOSFET EC07 CIRCUIT g371 Text: HE D \| MöSSMSa QGCHB'ìM 0 \| INTERNATIONAL Data Sheet No. PD-9.357E _ T-39-Û9 RECTIFIER INTERNATIONAL RECTIFIER HEXFET TRANSISTORS IÖR IRFF330 IRFF331 N-CHAIUNEL POWER MOSFETs TO-39 PACKAGE IRFF33S IRFF333 400 Volt, 1.0 Ohm HEXFET Features: The HEXFET technology is the key to International	OCR Scan	T-39-Ã G-376 g371 IRFF330 IRFF331 IRFF332 IRFF333 510 MOSFET EC07 CIRCUIT g371	PDF
IRGBC-20 Abstract: No abstract text available Text: INTERNATIONAL RECTIFIER 2bE D • ^ 5 5 4 5 2 QDlOSflS 1 ■ Data Sheet No. PD-9.626A T- INSULATED GATE BIPOLAR TRANSISTOR -03 International @ ^ 3 Rectifier IR G B C SO GOOV, 1 3 A FEATURES 600V, 13A, T0-220AB IGBT International Rectifier's IRG series of Insulated Gate	OCR Scan	T0-220AB IRGBC20 IRGBC-20	PDF
Untitled Abstract: No abstract text available Text: International ! r]Rectifier PD-9.718A IRGMC50F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den sities than comparable bipolar transistors, while	OCR Scan	IRGMC50F IRGMC50FD IRGMC50FU O-254 4fiSS45S MIL-S-19500	PDF

IR 92 0151 Abstract: IRGAC40F IRGAC40 transistor g23 Text: International TOR PD-9.723A ]Rectifier IRGAC40F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den sities than comparable bipolar transistors, while	OCR Scan	IRGAC40F IR 92 0151 IRGAC40 transistor g23	PDF
2sc 1740 TRANSISTOR equivalent Abstract: 40HFL60 IRGMC40F 480V1 Text: International Hg] Rectifier PD-9.716A IRGMC40F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den sities than comparable bipolar transistors, while	OCR Scan	pd96a IRGMC40F IRGMC40FD IRGMC40FU MIL-S-19500 O-254 2sc 1740 TRANSISTOR equivalent 40HFL60 IRGMC40F 480V1	PDF
100-C Abstract: IRGMC30F 9714A Text: International ioR Rectifier PD-9.714A IRGMC30F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den sities than comparable bipolar transistors, while	OCR Scan	IRGMC30F IRGMC30FD IRGMC30FU mil-s-19500 O-254 100-C IRGMC30F 9714A	PDF
IRGAC50F Abstract: G37 IC J3060 transistor g35 ecs g41 IRGAC50 Text: International lü ] Rectifier PD-9.725A IRGAC50F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den sities than comparable bipolar transistors, while	OCR Scan	IRGAC50F 40HFL60 S54S5 lflb43 SS452 lflb44 G37 IC J3060 transistor g35 ecs g41 IRGAC50	PDF
transistor 9721 Abstract: 9721 mosfet to3 Text: International S Rectifier PD-9.721 A IRGAC30F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den sities than comparable bipolar transistors, while	OCR Scan	IRGAC30F DD10bl5 transistor 9721 9721 mosfet to3	PDF
IRGMC50F Abstract: IRGMC50FD IRGMC50FU 39AF Text: International S S Rectifier PD-9.718A IRGMC50F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den sities than comparable bipolar transistors, while	OCR Scan	IRGMC50F IRGMC50FD IRGMC50FU MIL-S-19500 O-254 IRGMC50F IRGMC50FU 39AF	PDF
T3D 87 Abstract: t3d 99 G-100 IRGMC50U Text: International [^Rectifier PD-9.719A IRGMC50U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT D escription Product Sum m ary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den sities than comparable bipolar transistors, while	OCR Scan	IRGMC50U IRGMC50U IRGMC50UD IRGMC50UU MIL-S-19500 O-254 G-105 T3D 87 t3d 99 G-100	PDF
f422 Abstract: transistor f422 tr f422 G-377 IRFF423 358E IRFF420 IRFF421 IRFF422 420 Diode 2ba Text: HE D I 4055452 INTERNATIONAL 0001400 2 \| Data Sheet No. PD-9.358E RECTIFIER INTERNATIONAL RECTIFIER TOR T-39-09 HEXFET TRANSISTORS IRFF4SQ IRFF421 N-CHANNEL POWER MOSFETs TO-3S PACKAGE Q [I IRFF4SS IRFF4S3 500 Volt, 3.0 Ohm HEXFET Features: T he HEXFET® technology is the key to International	OCR Scan	0GGci400 T-39-09 G-382 f422 transistor f422 tr f422 G-377 IRFF423 358E IRFF420 IRFF421 IRFF422 420 Diode 2ba	PDF
Untitled Abstract: No abstract text available Text: International S Rectifier PD-9.715A IRGMC30U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Description Product Summary Insulated G ate Bipolar Transistors IGBTs from International Rectifier have higher current d en sities than com parable bipolar transistors, while	OCR Scan	IRGMC30U IRGMC30UD IRGMC30UU O-254 4flS5455 001flb73	PDF
h253 Abstract: IRHM8450 T600 12 23 2N7270 IRHM7450 iA109 SN7570 Text: Data Sheet No. PD-9.673B INTERNATIONAL RECTIFIER HEXFET TRANSISTORS IRHM7450 IRHM8450 N-CHANNEL SN7S70 JANSRSN7570 JANSHSN7S70 _MEGA RAD HARD 500 Volt, 0.45Q, MEGA RAD HARD HEXFET International Rectifier’s M E G A RAD HARD Technology HEXFETs	OCR Scan	IRHM7450 IRHM8450 SN7570 JANSR2N7570 JANSHSN7S70 1x106 IRHM7450D IRHM7450U O-254 h253 IRHM8450 T600 12 23 2N7270 iA109	PDF

Privacy Settings

INTERNATIONAL RECTIFIER TRANSISTOR Search Results

INTERNATIONAL RECTIFIER TRANSISTOR Result Highlights (5)

INTERNATIONAL RECTIFIER TRANSISTOR Datasheets Context Search

IRGPC56

IRGPC46

Q405

Untitled

C528 transistors

c628 DIODE

irgpc50

1117s

TR C458

IRGAC50U

ir*c30ud

g371

IRGBC-20

Untitled

IR 92 0151

2sc 1740 TRANSISTOR equivalent

100-C

IRGAC50F

transistor 9721

IRGMC50F

T3D 87

f422

Untitled

h253