Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET_ BIPOLAR ANALOG INTEGRATED CIRCUIT |iPC2710TB 5 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The /XPC2710TB is a silicon monolithic integrated circuits designed as PA driver for 900 MHz band cellular
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iPC2710TB
/XPC2710TB
PC2710T
uPC2710T
WS60-00-1
C10535E)
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P12152E
Abstract: No abstract text available
Text: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT uPC271 OT 5 V, MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The /¿PC2710T is a silicon monolithic integrated circuits designed as PA driver for 900 MHz band cellular telephone tuners. This IC is packaged in minimold package.
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uPC2710T
PC2710T
P12152E
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Untitled
Abstract: No abstract text available
Text: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT ¿¿PC2709T 5 V, MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER D E S C R IP T IO N The /¿PC2709T is a silicon monolithic integrated circuit designed as 1st IF amplifier for DBS tuners. This IC is packaged in minimold package.
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uPC2709T
PC2709T
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BYPASS Capacitors NEC
Abstract: No abstract text available
Text: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT uPC2711T 2.9 GHz WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT FEATURES High power gain 13 dB TYP. @ f = 1 GHz Excellent frequency response 2.9 GHz TYP. @ 3 dB down below the gain at 0.1 GHz
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uPC2711T
PC2711T-E3
P12428EJ2V0DS0
WS60-00-1
VP15-00-3
IR35-00-3
C10535E)
BYPASS Capacitors NEC
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C946
Abstract: DM 0565 2SC1636 2SK43 2SC1636 equivalent C1475 1S1555 DM211 magnetic resistance element lm393 rotational speed
Text: DM-211 SO N Y. Magnetoresistance Element Description The DM -211 is a highly sensitive magneto resistance element, composed of an evaporated ferromagnetic alloy on a sillicon substrate. This element can be used for the detection of rotational speed and direction of rotation,
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DM-211
75mVp-p
iPC271
1S1555
2SA844
2SC1636,
100ft
C946
DM 0565
2SC1636
2SK43
2SC1636 equivalent
C1475
1S1555
DM211
magnetic resistance element
lm393 rotational speed
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Untitled
Abstract: No abstract text available
Text: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT ¿iPC2711T 2.9 GHz WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT FEATURES • High power gain 13 dB TYP. @ f = 1 GHz • Excellent frequency response 2.9 GHz TYP. @ 3 dB down below the gain at 0.1 GHz
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uPC2711T
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mmic a08
Abstract: t06 TRANSISTOR transistor t06 B584B B585B 544 mmic uPC1675 mmic prescaler divide by 64 UPC1668B UPC1678B
Text: Silicon MMIC Selection Guide WIDEBAND AMPLIFIERS ELECTRICAL C K M K T E m m C S 'M a O M Hz. i- ' « M l» ICC V (mA) NF (dB) Rim Gain (dB) (dB) RL oot PSAT (dB) (dBm) ISOL (dB) m tm m m n * m m MIN TYP MAX TYP MIN TYP MAX TYP TYP TYP TYP Ca* 25 5.5 16 18
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TI TTL
Abstract: PC311C 311G2 UPC271C PC271D JPC271 PC271C
Text: 25 - fiP C 21 1, //P C 3 11 HflBB 5 2 ‘m .W ,W l?f<O Ì im =‘ >s*\s— 9T',X b n « * i l :S x T V '5 . -y iS ^ , À Ì I t7 t7 h 15 OP r *3 5 , t u * l i T T L , C-M O S * f o S f n ì? y * S r itg lE K iT * # •£. /< p c 2 7 ii± a « it* ffl, /<pc3iiìì—
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/fPC311
/PC271D
IftlCttLM311
PC271D/217ED)
//PC271C/311C)
PC271G2/311G2)
500mW
pPC271D/ED)
350mW(
iPC271C/3HC)
TI TTL
PC311C
311G2
UPC271C
PC271D
JPC271
PC271C
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nec ecom 3.29
Abstract: PC2712TB RETU 3.02 2712T PC2711TB
Text: DATA SHEET_ ¿IPC2711TB, ¿IPC2712TB BIPOLAR ANALOG INTEGRATED CIRCUITS 5 V, SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER FOR DBS TUNERS DESCRIPTION The ^P C 2711TB and ^P C 2712TB are silicon monolithic integrated circuits designed as buffer am plifier for DBS
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uPC2711TB
uPC2712TB
2711TB
2712TB
/PC2711TB
/PC2712TB
tPC2711T///PC2712T
PC2711TB///PC2712TB
2711T/
2712T.
nec ecom 3.29
PC2712TB
RETU 3.02
2712T
PC2711TB
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TCA965 equivalent
Abstract: ULN2283 capacitor 473j 100n UAF771 transistor GDV 65A pbd352303 cm2716 TAA2761 TAA4761 ULN2401
Text: veryimpressivePrice. power drain. For the same low price astheTTL-compatible DG211. Very Impressive Performance. Low power, low source-drain ON resistance, low switching times, low current, low price. It all adds up to superstar performance for portable and battery-operated
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DG211.
DG300
DG308
DG211
TCA965 equivalent
ULN2283
capacitor 473j 100n
UAF771
transistor GDV 65A
pbd352303
cm2716
TAA2761
TAA4761
ULN2401
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Untitled
Abstract: No abstract text available
Text: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT ¿iPC271 OT 5 V, MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The ^¡PC2710T is a silicon monolithic integrated circuits designed as PA driver for 900 MHz band cellular telephone tuners. This IC is packaged in minimold package.
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iPC271
PC2710T
WS60-00-1
C10535E)
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MPC271
Abstract: PC271 UPC271 IIPC271EO LM311 Vo-35 UPC311
Text: MPC271 / 311 P re c isio n V o lt a g e C o m p a r a t o r s FEATURES G E N E R A L D E S C R IP T IO N The pPC271/3t1 are voltage comparators that nav* • Operate from single 5 V supply tnpct currents more than a hundred times lower than • Maximum input current 250 nA
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uPC271
uPC311
pPC271/3t1
fiPC271
jiPC311
MPC271
PC271
IIPC271EO
LM311
Vo-35
UPC311
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET_ BIPOLAR ANALOG INTEGRATED CIRCUIT juPC3210TB 5 V, SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER DESCRIPTION The ¿¿PC3210TB is a silicon monolithic integrated circuits designed as wideband amplifier. The /iPC3210TB is
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uPC3210TB
PC3210TB
/iPC3210TB
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Untitled
Abstract: No abstract text available
Text: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUITS JuPC2711TB, JuPC2712TB 5 V, SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER FOR DBS TUNERS DESCRIPTION The ¿iPC2711TB and ¿iPC2712TB are silicon monolithic integrated circuits designed as buffer amplifier for DBS
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uPC2711TB
uPC2712TB
iPC2711TB
iPC2712TB
iPC2711TB
iPC2712TB
iPC2711T/
iPC2712T
iPC2711TB/
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