23c16000w
Abstract: No abstract text available
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT 16M-BIT MASK-PROGRAMMABLE ROM 2M-WORD BY 8-BIT BYTE MODE /1 M-WORD BY 16-BIT (WORD MODE) Description The /xPD23C16000W is a 16,777,216 bits m ask-program m able ROM. The w ord organization is selectable (BYTE mode: 2,097,152 w ords by 8 bits, W ORD mode: 1,048,576 words by 16 bits).
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16M-BIT
16-BIT
uPD23C16000W
PD23C16000W
42-pin
44-pin
48-pin
23c16000w
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT ju P D 2 3 C 1 6 0 0 0 L 16M-BIT MASK-PROGRAMMABLE ROM 2M-WORD BY 8-BIT BYTE MODE / 1M-WORD BY 16-BIT(WORD MODE) Description The ^¡PD23C16000L is a 16,777,216 bits mask-programm able ROM. The word organization is selectable (BYTE
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OCR Scan
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16M-BIT
16-BIT
PD23C16000L
42-pin
44-pin
48-pin
S44G5-80-7JF5
/iPD23C16000L
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toshiba 32k*8 sram
Abstract: M5M23C100 M5M5265 seeq DQ2816A M5M23C400 MB832001 HITACHI 64k DRAM TC511000 KM41C464 TC51464
Text: FUNCTION GUIDE MEMORY ICs 3. CROSS REFERENCE GUIDE 3.1 DRAM Density 64 K X 1 256K X 1 X4 1M X X 4M X X 3.2 Mode Org. 1 4 1 4 Samsung Toshiba Hitachi Fujitsu NEC MSM3764 KM4164 Page Okl F. Page KM41C256 TC51256 Nibble KM41C257 TC51257 HM51256 S. Column KM41C258
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KM4164
KM41C256
KM41C257
KM41C258
KM41C464
KM41C466
KM41C1000
KM41C1001
KM41C1002
KM44C256
toshiba 32k*8 sram
M5M23C100
M5M5265
seeq DQ2816A
M5M23C400
MB832001
HITACHI 64k DRAM
TC511000
TC51464
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Untitled
Abstract: No abstract text available
Text: DATA SH EET MOS INTEGRATED CIRCUIT ¿iPD2 3 C 1 6 0 0 0 LW 16M-BIT MASK-PROGRAMMABLE ROM 2M-WORD BY 8-BIT BYTE MODE /1 M-WORD BY 16-BIT (WORD MODE) Description The /¿PD23C16000LW is a 16,777,216 bits mask-programmable ROM. The word organization is selectable (BYTE
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OCR Scan
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16M-BIT
16-BIT
uPD23C16000LW
PD23C16000LW
42-pin
44-pin
48-pin
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PDF
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUII / P D 2 3 C 1 6 0 0 0 A L 16M-BIT M ASK-PROGRAM MABLE ROM 2M -W ORD BY 8-BIT(BYTE MODE / 1M-W ORD BY 16-BIT(W ORD MODE) Description The ^¡PD23C16000AL is a 16,777,216 bits mask-programm able ROM. The word organization is selectable (BYTE
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OCR Scan
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16M-BIT
16-BIT
uPD23C16000AL
PD23C16000AL
44-pin
48-pin
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TC55B8128
Abstract: KM23C4000AG TC534000AF HN62308BP TC551632 hitachi cross mb83 68512U HITACHI 64k DRAM TC55B4256
Text: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 2 56 K 1M Org. x1 Toshiba F Page T C 51256 N ib b le K M 4 1C 2 5 7 T C 51257 H ita ch i H M 51 2 5 6 — F u jitsu M B 8 12 5 6 M B 8 12 5 7 NEC /P D 41256 — Oki M S M 5 1C 2 5 6
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OCR Scan
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TC511001
TC514101
514170B
514280B
TC5316200P
KM2X16100
KM23C16000G
KM23C16100G
KM23C16000FP
KM23C16100FP
TC55B8128
KM23C4000AG
TC534000AF
HN62308BP
TC551632
hitachi cross
mb83
68512U
HITACHI 64k DRAM
TC55B4256
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Untitled
Abstract: No abstract text available
Text: jL /X V * V JJPD23C16000 16,777,216-Bit Mask-Programmable CMOS ROM NEC Electronics Inc. Description Pin Configuration The ^PD23C16000 is a 16,777,216-bit ROM fabricated with CMOS silicon-gate technology. The device is static in operation and has three-state outputs and fully
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OCR Scan
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uPD23C16000
216-Bit
PD23C16000
The/JPD23C16000
IPD23C16000
42-pin
/tPD23C16000
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d23c16000
Abstract: D23C1600
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT ¿iPD23C16000L 16M-BIT MASK-PROGRAMMABLE ROM 2M-WORD BY 8-BIT BYTE MODE / 1 M-WORD BY 16-BIT(WORD MODE) Description The /¿PD23C16000L is a 16,777,216 bits mask-programmable ROM. The word organization is selectable (BYTE
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OCR Scan
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uPD23C16000L
16M-BIT
16-BIT
PD23C16000L
/xPD23C16000L
42-pin
44-pin
48-pin
d23c16000
D23C1600
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