irf234 n
Abstract: irf*234 n IRF236 IRF234 IRF237 IRF235 TB334
Text: IRF234, IRF235, IRF236, IRF237 Semiconductor 8.1A and 6.5A, 275V and 250V, 0.45 and 0.68 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 8.1A and 6.5A, 275V and 250V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power
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IRF234,
IRF235,
IRF236,
IRF237
irf234 n
irf*234 n
IRF236
IRF234
IRF237
IRF235
TB334
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Untitled
Abstract: No abstract text available
Text: IRF234 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)250 V(BR)GSS (V)20 I(D) Max. (A)8.1 I(DM) Max. (A) Pulsed I(D)5.1 @Temp (øC)100 IDM Max (@25øC Amb)32 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)75 Minimum Operating Temp (øC)-55õ
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IRF234
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irf234 n
Abstract: TA17413
Text: IRF234, IRF235, IRF236, IRF237 S E M I C O N D U C T O R 8.1A and 6.5A, 275V and 250V, 0.45 and 0.68 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 8.1A and 6.5A, 275V and 250V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power
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IRF234,
IRF235,
IRF236,
IRF237
TA17413.
irf234 n
TA17413
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IRF460
Abstract: SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065
Text: Aerospace and Defense Products Short Form Catalog 2007 Welcome to the Aerospace and Defense Products Short Form Catalog. Inside is an overview of our product line including product specific information. To learn more, visit our web site at irf.com where you will find technical documents, data sheets for all products, application notes, design tips, technical papers, application-specific information,
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30am-5
44-0-1737-2com
DB8029C
IRF460
SMD TRANSISTOR MARKING k38
smd transistor k38
we 751002 s
SMD-6C
transistor smd k45
RAD-HARD igbt
IRF3504
afl2805s manufactured by international rectifier
550-065
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Q2N4401
Abstract: D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751
Text: Analog Parts Index Digital Mixed-Signal Device Type Index Click on a device type to jump to its page Actuator Fluid Level Detector Operational Amplifier Small-Signal Mosfet Amplifier/Equilizer Ground Fault Interrupter Opto-Isolator Switch Mulitplier Analog
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RD91EB
Q2N4401
D1N3940
Q2N2907A
D1N1190
Q2SC1815
Q2N3055
Q2N1132
D1N750
D02CZ10
D1N751
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irf234 n
Abstract: irf*234 n IRF234 irf238 ir1f IRF237 IRF235 IRF236
Text: Rugged Power M O SFETs_ IRF234, IRF235, IRF236, IRF237 File Number 2208 Avalanche-Energy-Rated N-Channel Power MOSFETs 8.1 A and 6.5 A, 275 V and 250 V fDs on = 0.45 O and 0.68 n N-CHANNEL ENHANCEMENT MODE Feature*: • Single pulse avalanche energy rated
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OCR Scan
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IRF234,
IRF235,
IRF236,
IRF237
IRF236
IRF237
irf234 n
irf*234 n
IRF234
irf238
ir1f
IRF235
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Untitled
Abstract: No abstract text available
Text: IRF234, IRF235, IRF236, IRF237 h a r r is SEUIC0NDUCT0R 8.1 A and 6.5A, 275V and 250V, 0.45 and 0.68 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 8.1 A and 6.5A, 275V and 250V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power
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OCR Scan
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IRF234,
IRF235,
IRF236,
IRF237
1RF234,
RF236,
RF237
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PDF
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irf*234 n
Abstract: TA17413
Text: IRF234, IRF235, IRF236, IRF237 h a r r is 8.1 A and 6.5A, 275V and 250V, 0.45 and 0.68 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 8.1 A and 6.5A, 275V and 250V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power
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OCR Scan
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IRF234,
IRF235,
IRF236,
IRF237
TA17413.
andRF234,
RF236,
RF237
irf*234 n
TA17413
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PDF
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irf*234 n
Abstract: IRF235 sm 4205 IRF234d GE-X8
Text: IRF234, IRF235 IRF236, IRF237 21 HARRIS N-Channel Power MOSFETs Avalanche-Energy Rated May 1992 Package Features T O -2 0 4 A A • 8.1A and 6.5A, 275V - 250V B O T T O M VIEW • rD S °n = 0 -4 5 0 and 0 .6 8 ÎÎ • Single Pulse Avalanche Energy Rated
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OCR Scan
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IRF234,
IRF235
IRF236,
IRF237
IRF235,
IRF237
irf*234 n
sm 4205
IRF234d
GE-X8
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PDF
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k3226
Abstract: LD 7751 os lg washing machine control circuit lg washing machine irf234 n washing machine lg IRF234 F234
Text: HE D I MflSS4SS aOQTOlO 2 | Data Sheet No. PD-9.474B INTERNATIONAL RE CTIFIER INTERNATIONAL RECTIFIER I« R T-39-11 HEXFET TRANSISTORS IR F234 IR F235 NCHANNEL 250 Volt, 0.45 Ohm HEXFET The HEXFET® technology is the key to International Rectifier's advanced line of power MOSFET transistors.
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OCR Scan
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T-39-11
4fl5545H
IRF234,
IRF235
k3226
LD 7751 os
lg washing machine control circuit
lg washing machine
irf234 n
washing machine lg
IRF234
F234
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PDF
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irf*234 n
Abstract: No abstract text available
Text: HARRIS SEMICOND SECTOR 40E » • 430 2 2 7 1 GOBM'RQH b « H A S 33 HARRIS IR F234, IRF235 IR F236, IR F237 August 1991 N-Channel Power MOSFETs Avalanche-Energy Rated l\ Features Package T 0 -2 0 4 A A • 8.1A and 6 .SA, 2 7 5 V - 2 5 0V • rD S o n =
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OCR Scan
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IRF235
IRF234,
IRF235,
IRF236,
IRF237
RF234,
irf*234 n
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PDF
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IRF224
Abstract: irf244 THOMSON DISTRIBUTOR 58e d IRF222 IRF352 irf362 THOMSON 58E THOMSON 58E CASE OUTLINE IRF220 IRF221
Text: THOMSON/ HtXhtl S flE D ISTRIBU TOR □ □T D • TCSK International m s Rectifier Power MOSFETs Hermetic Package TO-3 N-Channel Part Number IRF223 IRF221 IRF233 IRF231 IRF243 IRF241 IRF253 IRF251 IRF222 IRF220 IRF232 2N6758 IRF230 IRF242 IRF240 IRF252 IRF250
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OCR Scan
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IRF223
IRF221
IRF233
IRF231
IRF243
IRF241
IRF253
IRF251
IRF222
IRF220
IRF224
irf244
THOMSON DISTRIBUTOR 58e d
IRF352
irf362
THOMSON 58E
THOMSON 58E CASE OUTLINE
IRF220
IRF221
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PDF
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IRFP237
Abstract: IRFP234 IRFP235 IRF246 IRF640R IRF627 irfp236 IRFP255 1RF632 IRF244
Text: TH OH SO N/ D I S T R I B U TOR 5ñE D T05t.fl73 QD D S 7 1 D 713 TCSK Power M O S F E T s R u gge d -Se rie s Power M O S F E T s — N -Channel continued 0.45 0.60 0.70 0.80 1.80 2 2.20 2.50 3 3.5 4 4.5 5 5.5 8 9 16 18 25 30 250 3.30 3.80 6.50 8.10 13
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OCR Scan
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T05tifl73
QDDS71D
IRF232R
IRF230R
IRF242R
IRF240R
IRF252R
IRF250R
IRFF212R
IRFF210R
IRFP237
IRFP234
IRFP235
IRF246
IRF640R
IRF627
irfp236
IRFP255
1RF632
IRF244
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PDF
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idm 73
Abstract: IRF244
Text: H EXFET Power MOSFETs International S<Ei R e c tifie r Hermetic Package TO-3 N-Channel Part Number Vos Drafn Roston Source Voltage Volts) On-State Resistance (Ohms) Iq Continuous Drain Current 25°C Case (Amps) IDM Drain Current (Amps) Pq Max Power Dissipation
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OCR Scan
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IRF223
IRF221
IRF233
IRF231
IRF243
IRF241
IRF253
IRF251
IRF222
IRF220
idm 73
IRF244
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PDF
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irf211
Abstract: irf244 Irf154 IRF154 N IRF242 IRF243 IRF245 IRF252 1RF240
Text: - ft A gj £ *± Vd s or € £ Vg s Pd Id * /CH Vd g a t § <Ta=25^C I gss rain * /CH Vg s * V ) (V ) (W) (A ) Vg s t h ) I dss (n A ) (V ) (H A ) (V ) (V ) (V ) Id (n A ) ft & I d (o n ) C is s g fs C oss ft C rss Vg s =0 (m ax) * ty p (0 ) Vg s (V ) * ty p
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OCR Scan
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T0-204AA
O-204AA
RF240
TQ-204AE
IRF242
T0-204AE
IRF243
IRF231
IRF232
IRF233
irf211
irf244
Irf154
IRF154 N
IRF242
IRF243
IRF245
IRF252
1RF240
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PDF
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4311 mosfet transistor
Abstract: D 4206 TRANSISTOR transistor D 322 Power MOSFETs D 843 Transistor Transistor irf230 h a 431 transistor MOSFET IRF460 n-channel 4336 742r
Text: - POWER MOSFETs 4 N-CHANNEL POWER MOSFETs PAGE 2N6755, 2N6756 N-Channel Enhancement-Mode Power Field-Effect Transistors. 2N6757, 2N6758 N-Channel Enhancement-Mode Power Field-Effect Transistors. 4-11 2N6759, 2N6760
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OCR Scan
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2N6755,
2N6756
2N6757,
2N6758
2N6759,
2N6760
2N6761,
2N6762
2N6763,
2N6764
4311 mosfet transistor
D 4206 TRANSISTOR
transistor D 322
Power MOSFETs
D 843 Transistor
Transistor irf230
h a 431 transistor
MOSFET IRF460
n-channel 4336
742r
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PDF
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IRF460 in TO220
Abstract: IRF09110 IRF448 of IRF9540 and IRF540 irf460 switching irf460 to247 IRF250 TO-247 IRF244 Application of irf250 IRFD9120 N CHANNEL
Text: HEXFET Power MOSFETs Products From IR FullPak N-Channel FullPak Fully-isolated HEXFETs from the heatsink/enclosure , then the FullPak is for you. Until now, semiconductors were insulated from grounded heatsinks with insulating w ashers and nylon screws. Improper Installation of
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OCR Scan
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T0-240AA
IRF460 in TO220
IRF09110
IRF448
of IRF9540 and IRF540
irf460 switching
irf460 to247
IRF250 TO-247
IRF244
Application of irf250
IRFD9120 N CHANNEL
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PDF
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IRFZ34 mosfet
Abstract: UNITRODE buck converters DIL16S schematic diagram 72v to 12v converter irf*234 n 16 pin dp
Text: y _ _ U N IT R O D E UC2578 UC3578 PRELIMINARY Buck Pulse Width Modulator Stepdown Voltage Regulator FEATURES Provides Simple Single Inductor Buck PWM Step-Down Voltage Regulation Drives External High Side NMOS Switch 14V to 72V Input Voltage Operating Range
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OCR Scan
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100kHz
UC2578
UC3578
UC3578
100kHz
100kHz.
IRFZ34
IRFZ34 mosfet
UNITRODE buck converters
DIL16S
schematic diagram 72v to 12v converter
irf*234 n
16 pin dp
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PDF
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irf113
Abstract: 1RF440 1RF450 irf244 IRF242 IRF243 IRF245 IRF252 1RF340 Siliconix
Text: - ft A gj £ *± V ds or € £ Vgs t§ <Ta=25^C Pd Id m a Ig s s V gs th ) Id s s ft & F o s o n ) Vd s = & I d (on) Coss C is s g fs * /CH rain * /CH Vg s =0 ( * ty p ) ( * ty p ) (* ty p ) Id (max) (max) (max) Vd s (A) (pF) (pF) (pF) (V) (max) max Id
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OCR Scan
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T0-204AA
O-204AA
RF240
TQ-204AE
IRF242
T0-204AE
IRF243
O-204AE
IRF250
irf113
1RF440
1RF450
irf244
IRF242
IRF243
IRF245
IRF252
1RF340
Siliconix
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PDF
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irf244
Abstract: IRF351 IRF242 IRF243 IRF245 IRF252 1RF450 1RF430 1RF340 T0204AA
Text: - gj £ *± € ft A £ t§ <Ta=25^C Vd s or Vd g Vg s Pd Id * /CH a Ig s s rain * /CH Vg s * V) (V) (W) (A) V g s th) Id s s (nA) (V) (HA) (V) (V) (V) ft Id (nA) & & F os(on) Vd s = Vg s max Vd s m Id (on) Ciss g fs Coss ft Crss V g s =0 (max) *typ V g s
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OCR Scan
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T0-204AA
O-204AA
RF240
TQ-204AE
IRF242
T0-204AE
IRF243
1RF442
irf244
IRF351
IRF242
IRF243
IRF245
IRF252
1RF450
1RF430
1RF340
T0204AA
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PDF
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h bridge irf840 inverter
Abstract: irf840 pwm ac sine inverter 1kva inverter circuit diagram 3 phase inverter 120 conduction mode waveform AN-967A inverter irf840 sine wave 1kva inverter circuit diagram irfp460 inverter IRFP460 full bridge irf840 pwm ac motor
Text: APPLICATION NOTE 967A Using H EXFET III in PWM Inverters for Motor Drives and UPS Systems HEXFET is a registered trademark of International Rectifier by D. Grant Introduction The advantages of M O SFETs for high frequency pulse-width modulated (P W M ) inverters and choppers for variable speed
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OCR Scan
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AN-967A
h bridge irf840 inverter
irf840 pwm ac sine inverter
1kva inverter circuit diagram
3 phase inverter 120 conduction mode waveform
AN-967A
inverter irf840
sine wave 1kva inverter circuit diagram
irfp460 inverter
IRFP460 full bridge
irf840 pwm ac motor
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PDF
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3 phase inverter 120 conduction mode waveform
Abstract: inverter irf840 trf530 IRFP450 inverter sin wave inverter circuit diagram irfp460 inverter Three phase inverter using irfp450 mosfet Diagram irf840 pwm ac sine inverter h bridge irf840 inverter irfp460 mosfet pwm inverter
Text: Using HEXFET III in PWM Inverters for Motor Drives and UPS Systems HEXFET is a registered trademark of International Rectifier by D. Grant The PWM Inverter Introduction The advantages o f MOSFETs for high frequency pulse-width modulated (PWM) inverters and choppers for variable speed
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OCR Scan
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AN-967A
3 phase inverter 120 conduction mode waveform
inverter irf840
trf530
IRFP450 inverter
sin wave inverter circuit diagram
irfp460 inverter
Three phase inverter using irfp450 mosfet Diagram
irf840 pwm ac sine inverter
h bridge irf840 inverter
irfp460 mosfet pwm inverter
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PDF
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