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    Rochester Electronics LLC IRF244

    N-CHANNEL POWER MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRF244 Bulk 38,868 94
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    Vishay Dale IRF24ER470K

    FIXED IND 47UH 205MA 2.3 OHM TH
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRF24ER470K Reel 5,000 5,000
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    Rochester Electronics LLC IRF241

    MOSFET N-CH 150V 18A TO204AE
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRF241 Bulk 18 18
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    Vishay Dale IRF24ER330K

    FIXED IND 33UH 255MA 1.5 OHM TH
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRF24ER330K Bag 5,000
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    Vishay Dale IRF24ER2R2K

    FIXED IND 2.2UH 630MA 250MOHM TH
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    DigiKey IRF24ER2R2K Bag 5,000
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    Find more IRF24 price and stock on Findchips.com

    IRF24 Datasheets (151)

    Part
    ECAD Model
    Manufacturer
    Description
    Curated
    Datasheet Type
    PDF
    IRF-24 Vishay Siliconix Inductors Original PDF
    IRF240 Harris Semiconductor Power MOSFET Selection Guide Original PDF
    IRF240 International Rectifier HEXFET Power Mosfet Original PDF
    IRF240 Intersil 18A, 200V, 0.180 ?, N-Channel Power MOSFET Original PDF
    IRF240 Semelab FET, 2 VThreshold, ID 18 A Original PDF
    IRF240 Semelab N-Channel Power MOSFET for HI-REL Applications Original PDF
    IRF240 Fairchild Semiconductor N-Channel Power MOSFETs, 18A, 150-200V Scan PDF
    IRF240 FCI POWER MOSFETs Scan PDF
    IRF240 Frederick Components Power MOSFET Selection Guide Scan PDF
    IRF240 General Electric Power Transistor Data Book 1985 Scan PDF
    IRF240 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    IRF240 International Rectifier TO-3 N-Channel Hexfet Power MOSFETS Scan PDF
    IRF240 Motorola Switchmode Datasheet Scan PDF
    IRF240 Motorola European Master Selection Guide 1986 Scan PDF
    IRF240 Motorola TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,1.5A I(D),TO-39 Scan PDF
    IRF240 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    IRF240 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    IRF240 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    IRF240 Unknown FET Data Book Scan PDF
    IRF240 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    ...

    IRF24 Datasheets Context Search

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    IRF240

    Abstract: mosfet IRF240
    Text: PD - 90370 REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE IRF240 200V, N-CHANNEL Product Summary Part Number IRF240 BVDSS 200V RDS(on) 0.18Ω ID 18A The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors.


    Original     		O-204AA/AE) IRF240 IRF240 mosfet IRF240 PDF

    mosfet IRF240

    Abstract: IRF242 IRF240 IRF241 IRF243
    Text: Standard Power MOSFETs- IRF240, IRF241, IRF242, IRF243 File N um ber Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors 16 A and 18 A, 150 V - 200 V rDsion» - 0.18 Q and 0.22 O


    OCR Scan     		IRF240, IRF241, IRF242, IRF243 IRF243 08TAIN mosfet IRF240 IRF242 IRF240 IRF241 PDF

    MTM40N20

    Abstract: MTM8N18 MTM45N12 MTM45N15 MTM40N18 IRF233 MTM8N10 MTM20N10 IRF240 IRF252
    Text: POWER TRANSISTORS — TMOS METAL continued Metal TMOS Power MOSFETs — TO-204AA (continued) CASE 1-04 and CASE 1-05 V b R(DSS) (Volts) Min (Ohms) Max (Amp) 200 0.18 10 0.16 7.5 0.12 16 Pd <“•Tc = 25°C (Wans) Max IRF240 • 18 125 M TM 15N 20 • 15


    OCR Scan     		O-204AA IRF240 MTM15N20 IRF252Â IRF250Â MTM40N20 MTM5N18 MTM5P18* MTM7N18 MTM8P18* MTM8N18 MTM45N12 MTM45N15 MTM40N18 IRF233 MTM8N10 MTM20N10 IRF240 IRF252 PDF

    irf246 N

    Abstract: irf244 IRF246
    Text: IRF244, IRF245, IRF246, IRF247 S E M I C O N D U C T O R 14A and 13A, 275V and 250V, 0.28 and 0.34 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 14A and 13A, 275V and 250V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    Original     		IRF244, IRF245, IRF246, IRF247 TA17423. irf246 N irf244 IRF246 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF241 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)150 V(BR)GSS (V)20 I(D) Max. (A)18 I(DM) Max. (A) Pulsed I(D)11 @Temp (øC)100 IDM Max (@25øC Amb)72 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)125 Minimum Operating Temp (øC)-55õ


    Original     		IRF241 PDF

    IRF250a

    Abstract: MTH8P20 MTM20N10 MTM45N15 MTP2P45 IRF240 IRF250 IRF252 MTM12N18 MTM15N20
    Text: POWER TRANSISTORS — TMOS METAL continued Metal TMOS Power MOSFETs — TO-204AA (continued) CASE 1-04 and CASE 1-05 V b R(DSS) (Volts) Min (Ohms) Max (Amp) 200 0.18 10 0.16 7.5 0.12 16 Pd <“•T c = 25°C (Wans) Max IRF240 • 18 125 M TM 15N 20 • 15


    OCR Scan     		O-204AA IRF240 MTM15N20 IRF252Â IRF250Â MTM40N20 MTM5N18 MTM5P18* MTM7N18 MTM8P18* IRF250a MTH8P20 MTM20N10 MTM45N15 MTP2P45 IRF240 IRF250 IRF252 MTM12N18 MTM15N20 PDF

    IRF240

    Abstract: IN4723 irf640 IRF241 diodes IN4723 IRF243 IRF242 IRF641 IRF642 IRF643
    Text: • IRF243 ■ IRF643 ■ IRF242 ■ IRF642 ■ IRF241 ■ IRF641 IRF240 IRF640 IRF240 ■ IRF241 ■ IRF242 ■ IRF243 IRF640 ■ IRF641 ■ IRF642 ■ IRF643 a S ilic o n ix Advanced Information 200V MOSPOWER N-Channel Enhancem ent-Mode These power FETs are designed especially for o ffline sw itching regulators, converters,


    OCR Scan     		IRF240 IRF241 IRF242 IRF243 IRF640 IRF641 IRF642 IRF643 IRF240 IRF241 IN4723 irf640 diodes IN4723 IRF242 IRF641 IRF642 IRF643 PDF

    IRF240R

    Abstract: IRF242R and18a IRF240 IRF241R IRF243R
    Text: Rugged Power MOSFETs File N u m b er 2003 IRF240R, IRF241R IRF242R, IRF243R Avalanche Energy Rated N-Channel Power MOSFETs TERMINAL DIAGRAM 16A and 18A, 200V, 150V ros on = 0 . 1 and 0.220 Features: Single pulse avalanche energy rated SOA Is power-dlsslpation lim ited


    OCR Scan     		IRF240R, IRF241R IRF242R, IRF243R 92CS-4263B IRF241R, IRF242R IRF243R IRF240R and18a IRF240 IRF241R PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF240, IRF241, I i F 2 4 3 h a r r is S E M I C O N D U C T O R 16A and 18A, 200V and 150V, 0.18 and 0.22 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 16A and 18A, 200V and 150V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    OCR Scan     		IRF240, IRF241, PDF

    Untitled

    Abstract: No abstract text available
    Text: H a r r IRF244, IRF245, IRF246, IRF247 i s SEMIC0NDUCT0R 14A and 13A, 275V and 250V, 0.28 and 0.34 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 14A and 13A, 275V and 250V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    OCR Scan     		IRF244, IRF245, IRF246, IRF247 IRF244 1RF245, RF246, RF247 PDF

    power MOSFET IRF240

    Abstract: mosfet IRF240 IRF240 FET
    Text: IRF240 MECHANICAL DATA Dimensions in mm inches 40.01 (1.575) Max. 26.67 (1.050) Max. 4.47 (0.176) Rad. 2 Pls. N–CHANNEL POWER MOSFET FOR HI–REL APPLICATIONS 22.23 (0.875) Max. 11.43 (0.450) 6.35 (0.250) 1.09 (0.043) 0.97 (0.038) Dia. 1.63 (0.064) 1.52 (0.060)


    Original     		IRF240 IRF240" IRF240 IRF240-JQR-B IRF240SMD IRF240SMD-JQR-B O276AB) 600pF power MOSFET IRF240 mosfet IRF240 IRF240 FET PDF

    IRFZ40

    Abstract: irfz42 IRFZ42N
    Text: SCS-THOMSON IRFZ40 IRFZ42 [ * Q m i ( M ( 0M (g s N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS R DS(on 'd IRF240 50 V 0.028 ß 35 A IRF242 50 V 0.035 Q 35 A . VER YLO W RDS(on) • LOW DRIVE ENERGY FOR EASY DRIVE • HIGH TRANSCONDUCTANCE /Crss RATIO


    OCR Scan     		IRFZ40 IRFZ42 IRF240 IRF242 irfz42 IRFZ42N PDF

    mosfet to3

    Abstract: IRF240
    Text: IRF240 MECHANICAL DATA Dimensions in mm inches 40.01 (1.575) Max. 26.67 (1.050) Max. 4.47 (0.176) Rad. 2 Pls. N–CHANNEL POWER MOSFET FOR HI–REL APPLICATIONS 22.23 (0.875) Max. 11.43 (0.450) 6.35 (0.250) 1.09 (0.043) 0.97 (0.038) Dia. 1.63 (0.064) 1.52 (0.060)


    Original     		IRF240 00A/ms mosfet to3 IRF240 PDF

    mosfet IRF240

    Abstract: IRF241 irf240 IRF243 power MOSFET IRF240
    Text: MOTOROLA SEM ICO NDUCTOR TECHNICAL DATA IRF240 IRF241 IRF243 Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS These TM O S Power FETs are designed for low voltage, high speed power sw itching applications such as sw itching regulators, converters, solenoid


    OCR Scan     		IRF240 IRF241 IRF243 97A-02 O-204AE IRF240, mosfet IRF240 IRF243 power MOSFET IRF240 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF24D Linear ICs dc-to-dc/Charge Pump Voltage Converter status Military/High-RelN Output Voltage Nominal V 24 Load Current Max. (A)208m Drop-Out Volt Max. P(D) Max. (W) Nom. Supp (V)8.0 Minimum Operating Temp (øC)-25 Maximum Operating Temp (øC)70 Package StyleModule


    Original     		IRF24D Code8-989 NumberLN00800989 PDF

    irf240

    Abstract: No abstract text available
    Text: HE D I «1055455 INTERNATIONAL OQÛ'JOIt, 3 | Data Sheet No. PD-9.370F RECTIFIER INTERNATIONAL RECTIFIER IÖR REPETITIVE AVALANCHE AND dv/dt RATED* HEXFET TRANSISTORS IRF240 IRF241 IRF242 IM-CHANNEL 200 Volt, 0.18 Ohm HEXFET T0-204AE TO-3 Hermetic Package


    OCR Scan     		IRF240 IRF241 IRF242 T0-204AE IRF243 IRF240, IRF241, irf240 PDF

    IRF240

    Abstract: D88E IRF2402
    Text: [? MiF3°KQ FUF IRF240.241 D88EN2,M2 18 AMPERES 200,150 VOLTS RDS ON = 0.18 n FIELD EFFECT POWER TRANSISTOR This series of N -C hannel Enhancem ent-m ode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­


    OCR Scan     		IRF240 D88EN2 00A//usec, D88E IRF2402 PDF

    irf240

    Abstract: 1RF242 1RF240
    Text: SILICONIX INC l f iE i> 0254735 oom tm 4 • IRF240/241 /242/243 C T 'S ilt e o n ix JmW ■ incorporated N-Channel Enhancement Mode Transistors TO-2Q4AE TO-3 B O T T O M VIEW PRODUCT SUMMARY PART NUM BER V (BR)DSS (V) r DS(ON) (O) Id (A) IRF240 200 0.18


    OCR Scan     		IRF240/241 IRF240 IRF241 1RF242 IRF243 IRF240/241/242/243 T-39-13 1RF240 PDF

    irf246 N

    Abstract: irf244 TA17423 VW250 pj 88 diode
    Text: iH A R R is IRF244, IRF245, IRF246, IRF247 14A and 13A, 275V and 250V, 0.28 and 0.34 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 14A and 13A, 275V and 250V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    OCR Scan     		IRF244, IRF245, IRF246, IRF247 TA17423. RF244, RF245, RF247 irf246 N irf244 TA17423 VW250 pj 88 diode PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF241R Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)150 V(BR)GSS (V)20 I(D) Max. (A)18 I(DM) Max. (A) Pulsed I(D)11 @Temp (øC)100 IDM Max (@25øC Amb)72 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)125 Minimum Operating Temp (øC)-55õ


    Original     		IRF241R PDF

    IRF242

    Abstract: IRF243
    Text: FEF FIELD EFFECT POWER TRANSISTOR This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­ ness and reliability. IRF242.243 16 AMPERES »00,150 VOLTS


    OCR Scan     		IRF242 100ns TC-25Â 100ms IRF243 PDF

    IRF224

    Abstract: irf244 THOMSON DISTRIBUTOR 58e d IRF222 IRF352 irf362 THOMSON 58E THOMSON 58E CASE OUTLINE IRF220 IRF221
    Text: THOMSON/ HtXhtl S flE D ISTRIBU TOR □ □T D • TCSK International m s Rectifier Power MOSFETs Hermetic Package TO-3 N-Channel Part Number IRF223 IRF221 IRF233 IRF231 IRF243 IRF241 IRF253 IRF251 IRF222 IRF220 IRF232 2N6758 IRF230 IRF242 IRF240 IRF252 IRF250


    OCR Scan     		IRF223 IRF221 IRF233 IRF231 IRF243 IRF241 IRF253 IRF251 IRF222 IRF220 IRF224 irf244 THOMSON DISTRIBUTOR 58e d IRF352 irf362 THOMSON 58E THOMSON 58E CASE OUTLINE IRF220 IRF221 PDF

    irf640

    Abstract: IRF240 RF640 IRF 1640 IRF640 applications note PULSE GENERATOR IRF640-643 IRF241 IRF242 IRF243 IRF641
    Text: I FAIRCHILD SEMICONDUCTOR fl4 dÈ J 3 4 b U 7 4 DDETflfiS □ IRF240-243/IRF640-643 T - 3 Ï - H N-Channel Power MOSFETs, 18 A, 150-200 V FA IR C H ILD A Schlumberger Company Power And Discrete Division Description TO-2Q4AE TO-220AB These devices are n-channel, enhancement mode, power


    OCR Scan     		34bTti74 IRF240-243/IRF640-643 IRF240 IRF241 IRF242 IRF243 O-220AB IRF640 IRF641 IRF642 RF640 IRF 1640 IRF640 applications note PULSE GENERATOR IRF640-643 IRF243 PDF

    lg diode 88A

    Abstract: IRF240SM
    Text: im iF F i mi SEME IRF240SM LAB MECHANICAL DATA Dimensions in mm inches 11.5 («— ► 3.5 1 t ' k 1 r !1 2.0 N-CHANNEL POWER MOSFET -►i — 3.5 4 ¥ 200V V Dss 0.25 13.9A ^D(cont) 3.0 0 .1 8 0 0 ^DS(on) FEATURES 3 • HERMETICALLY SEALED SURFACE MOUNT PACKAGE


    OCR Scan     		IRF240SM TQ-220SM 300ms, lg diode 88A IRF240SM PDF