IRF640
Abstract: IRF640FP ST IRF640 IRF640 circuit JESD97 power MOSFET IRF640 fp IRF640 morocco
Text: IRF640 IRF640FP N-channel 200V - 0.15Ω - 18A TO-220/TO-220FP Mesh overlay Power MOSFET General features Type VDSS RDS on ID IRF640 200V <0.18Ω 18A IRF640FP 200V <0.18Ω 18A • Extremely high dv/dt capability ■ Very low intrinsic capacitances ■
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IRF640
IRF640FP
O-220/TO-220FP
O-220
O-220FP
IRF640
IRF640FP
ST IRF640
IRF640 circuit
JESD97
power MOSFET IRF640 fp
IRF640 morocco
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IRF640
Abstract: IRF640 applications note circuit using irf640 power MOSFET IRF640 IRF640FP IRF640 mosfet JESD97
Text: IRF640 IRF640FP N-channel 200V - 0.15Ω - 18A TO-220/TO-220FP Mesh overlay Power MOSFET General features Type VDSS RDS on ID IRF640 200V <0.18Ω 18A IRF640FP 200V <0.18Ω 18A • Extremely high dv/dt capability ■ Very low intrinsic capacitances ■
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IRF640
IRF640FP
O-220/TO-220FP
O-220
O-220FP
IRF640
IRF640 applications note
circuit using irf640
power MOSFET IRF640
IRF640FP
IRF640 mosfet
JESD97
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IRF640
Abstract: IRF640FI IRF640 morocco
Text: IRF640 IRF640FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRF640 IRF640FI • ■ ■ ■ V DSS R DS on ID 200 V 200 V < 0.18 Ω < 0.18 Ω 18 A 10 A TYPICAL RDS(on) = 0.145 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC
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IRF640
IRF640FI
100oC
O-220
ISOWATT220
IRF640
IRF640FI
IRF640 morocco
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IRF640 morocco
Abstract: irf640 IRF640 applications note IRF640FI schematic diagram UPS equivalent IRF640 FI schematic diagram UPS 600 Power free
Text: IRF640 IRF640FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRF640 IRF640FI • ■ ■ ■ V DSS R DS on ID 200 V 200 V < 0.18 Ω < 0.18 Ω 18 A 10 A TYPICAL RDS(on) = 0.145 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC
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IRF640
IRF640FI
100oC
O-220
ISOWATT220
IRF640 morocco
irf640
IRF640 applications note
IRF640FI
schematic diagram UPS
equivalent IRF640 FI
schematic diagram UPS 600 Power free
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irf640
Abstract: IRF640 P CHANNEL MOSFET IRF640 morocco circuit using irf640 IRF64 power MOSFET IRF640 fp irf640f stmicroelectronics datecode TO-220 0118mm
Text: IRF640 IRF640FP N - CHANNEL 200V - 0.150Ω - 18A TO-220/TO-220FP MESH OVERLAY MOSFET TYPE IRF640 IRF640F P • ■ ■ ■ V DSS R DS on ID 200 V 200 V < 0.18 Ω < 0.18 Ω 18 A 18 A TYPICAL RDS(on) = 0.150 Ω EXTREMELY HIGH dV/dt CAPABILITY VERY LOW INTRINSIC CAPACITANCES
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IRF640
IRF640FP
O-220/TO-220FP
IRF640F
O-220
O-220FP
IRF640 P CHANNEL MOSFET
IRF640 morocco
circuit using irf640
IRF64
power MOSFET IRF640 fp
stmicroelectronics datecode TO-220
0118mm
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power MOSFET IRF640 fp
Abstract: irf640 circuit using irf640 power MOSFET IRF640 IRF640FP for irf640 IRF640 mosfet stmicroelectronics datecode TO-220
Text: IRF640 IRF640FP N - CHANNEL 200V - 0.150Ω - 18A TO-220/TO-220FP MESH OVERLAY MOSFET TYPE V DSS R DS on ID IRF640 IRF640FP 200 V 200 V < 0.18 Ω < 0.18 Ω 18 A 18 A • ■ ■ ■ TYPICAL RDS(on) = 0.150 Ω EXTREMELY HIGH dV/dt CAPABILITY VERY LOW INTRINSIC CAPACITANCES
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IRF640
IRF640FP
O-220/TO-220FP
O-220
power MOSFET IRF640 fp
irf640
circuit using irf640
power MOSFET IRF640
IRF640FP
for irf640
IRF640 mosfet
stmicroelectronics datecode TO-220
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IRF640
Abstract: IRF640FP IRF64 IRF640 P CHANNEL MOSFET IRF640 morocco
Text: IRF640 IRF640FP N - CHANNEL 200V - 0.150Ω - 18A - TO-220/FP MESH OVERLAY MOSFET TYPE IRF640 IRF640F P • ■ ■ ■ V DSS R DS on ID 200 V 200 V < 0.18 Ω < 0.18 Ω 18 A 18 A TYPICAL RDS(on) = 0.150 Ω EXTREMELY HIGH dV/dt CAPABILITY VERY LOW INTRINSIC CAPACITANCES
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IRF640
IRF640FP
O-220/FP
IRF640F
O-220
IRF640
IRF640FP
IRF64
IRF640 P CHANNEL MOSFET
IRF640 morocco
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irf640
Abstract: IRF640FP IRF640 P CHANNEL MOSFET
Text: IRF640 IRF640FP N - CHANNEL 200V - 0.150Ω - 18A - TO-220/FP MESH OVERLAY MOSFET TYPE IRF640 IRF640F P • ■ ■ ■ V DSS R DS on ID 200 V 200 V < 0.18 Ω < 0.18 Ω 18 A 18 A TYPICAL RDS(on) = 0.150 Ω EXTREMELY HIGH dV/dt CAPABILITY VERY LOW INTRINSIC CAPACITANCES
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IRF640
IRF640FP
O-220/FP
IRF640F
O-220
irf640
IRF640FP
IRF640 P CHANNEL MOSFET
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irf640
Abstract: IRF640 P CHANNEL MOSFET IRF P CHANNEL MOSFET TO-220 P Channel Power MOSFET IRF DI L6 power MOSFET IRF640 fp IRF640FP IRF640 circuit IRF640 morocco IRF n CHANNEL MOSFET
Text: IRF640 IRF640FP N - CHANNEL 200V - 0.150Ω - 18A TO-220/TO-220FP MESH OVERLAY MOSFET TYPE IRF640 IRF640FP • ■ ■ ■ V DSS R DS on ID 200 V 200 V < 0.18 Ω < 0.18 Ω 18 A 18 A TYPICAL RDS(on) = 0.150 Ω EXTREMELY HIGH dV/dt CAPABILITY VERY LOW INTRINSIC CAPACITANCES
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IRF640
IRF640FP
O-220/TO-220FP
O-220
irf640
IRF640 P CHANNEL MOSFET
IRF P CHANNEL MOSFET TO-220
P Channel Power MOSFET IRF
DI L6
power MOSFET IRF640 fp
IRF640FP
IRF640 circuit
IRF640 morocco
IRF n CHANNEL MOSFET
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irf640
Abstract: power MOSFET IRF640 IRF640 circuit IRF640 applications note for irf640 data sheet IRF640 IRF640 mosfet IRF640 mosfet data sheet "Power MOSFET" 1600 v mosfet
Text: IRF640 POWERTR MOSFET GENERAL DESCRIPTION FEATURES This Power MOSFET is designed for low voltage, high Silicon Gate for Fast Switching Speeds speed power switching applications such as switching Low RDS on to Minimize On-Losses. Specified at Elevated
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IRF640
O-220
IRF640.
irf640
power MOSFET IRF640
IRF640 circuit
IRF640 applications note
for irf640
data sheet IRF640
IRF640 mosfet
IRF640 mosfet data sheet
"Power MOSFET"
1600 v mosfet
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IRF640
Abstract: SiHF640 SiHF640-E3 linear applications of power MOSFET IRF640 IRF640 applications note IRF640 application note
Text: IRF640, SiHF640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 70 • Fast Switching Qgs (nC) 13 • Ease of Paralleling 39 • Simple Drive Requirements Qgd (nC) Configuration
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IRF640,
SiHF640
2002/95/EC
O-220AB
O-220AB
11-Mar-11
IRF640
SiHF640-E3
linear applications of power MOSFET IRF640
IRF640 applications note
IRF640 application note
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IRF640 smd
Abstract: IRF640 applications note irf640 IRF640S IRF640 Field-Effect Transistor IRF640 application note
Text: Philips Semiconductors Product specification N-channel TrenchMOS transistor FEATURES IRF640, IRF640S SYMBOL QUICK REFERENCE DATA • ’Trench’ technology • Low on-state resistance • Fast switching • Low thermal resistance d VDSS = 200 V ID = 16 A
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IRF640,
IRF640S
IRF640
O220AB)
IRF640S
OT404
IRF640 smd
IRF640 applications note
IRF640 Field-Effect Transistor
IRF640 application note
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate MOSFETS IRF640 MOSFET N-Channel FEATURES z Dynamic dv/dt Rating z Repetitive Avalanche Rated z Fast Switching z Ease of Paralleling z Simple Drive Requirement TO-220 1. GATE 2. DRAIN
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O-220
IRF640
O-220
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate MOSFETS IRF640 MOSFET N-Channel FEATURES z Dynamic dv/dt Rating z Repetitive Avalanche Rated z Fast Switching z Ease of Paralleling z Simple Drive Requirement TO-220 1. GATE 2. DRAIN
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O-220
IRF640
O-220
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IRF640 applications note
Abstract: IRF640 circuit IRF640 n-channel MOSFET
Text: IRF640, SiHF640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 70 • Fast Switching Qgs (nC) 13 • Ease of Paralleling 39 • Simple Drive Requirements Qgd (nC) Configuration
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IRF640,
SiHF640
2002/95/EC
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
IRF640 applications note
IRF640 circuit
IRF640 n-channel MOSFET
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Untitled
Abstract: No abstract text available
Text: IRF640, SiHF640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 70 • Fast Switching Qgs (nC) 13 • Ease of Paralleling 39 • Simple Drive Requirements Qgd (nC) Configuration
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IRF640,
SiHF640
2002/95/EC
O-220AB
O-220AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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Untitled
Abstract: No abstract text available
Text: IRF640, SiHF640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 70 • Fast Switching Qgs (nC) 13 • Ease of Paralleling 39 • Simple Drive Requirements Qgd (nC) Configuration
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PDF
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IRF640,
SiHF640
2002/95/EC
O-220AB
O-220AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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irf640
Abstract: hexfet irf640 IRF640 circuit
Text: IRF640, SiHF640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 70 • Fast Switching Qgs (nC) 13 • Ease of Paralleling 39 • Simple Drive Requirements Qgd (nC) Configuration
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Original
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PDF
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IRF640,
SiHF640
O-220
12-Mar-07
irf640
hexfet irf640
IRF640 circuit
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Untitled
Abstract: No abstract text available
Text: IRF640, SiHF640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 70 • Fast Switching Qgs (nC) 13 • Ease of Paralleling 39 • Simple Drive Requirements Qgd (nC) Configuration
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Original
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PDF
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IRF640,
SiHF640
2002/95/EC
O-220AB
O-220AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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IRF640 applications note
Abstract: IRF640 circuit
Text: IRF640, SiHF640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 70 • Fast Switching Qgs (nC) 13 • Ease of Paralleling 39 • Simple Drive Requirements Qgd (nC) Configuration
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Original
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PDF
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IRF640,
SiHF640
2002/95/EC
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
IRF640 applications note
IRF640 circuit
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linear applications of power MOSFET IRF640
Abstract: irf640 IRF641 IRF640 circuit IRF642 F640 RF642 transistors irf640 IRF643
Text: - Standard Power MOSFETs IRF640, IRF641, IRF642, IRF643 File Number 1585 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors
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OCR Scan
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PDF
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IRF640,
IRF641,
IRF642,
IRF643
92CS-3374I
IRF643
1F640,
linear applications of power MOSFET IRF640
irf640
IRF641
IRF640 circuit
IRF642
F640
RF642
transistors irf640
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TP20N20E
Abstract: IRF640
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA IRF640 Pow er Field Effect Transistor IM-Channel Enhancem ent-Mode Silicon Gate This T M O S Power FET is designed for low voltage, high speed power switching applications such as switching regulators, converters, solenoid
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OCR Scan
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PDF
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IRF640
21A-06
O-220AB)
RATINGS22
L3li7254
D2732
TP20N20E
IRF640
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Untitled
Abstract: No abstract text available
Text: Product specification Philips Semiconductors N-channel TrenchMOS transistor SYMBOL FEATURES • • • • IRF640, IRF640S QUICK REFERENCE DATA ’Trench’ technology Low on-state resistance Fast switching Low thermal resistance V dss —200 V lD = 16 A
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OCR Scan
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PDF
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IRF640,
IRF640S
IRF640
T0220AB)
IRF640S
OT404
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1RF640
Abstract: 1RF640S 3V IC LINEAR SMD irf640a RD540 ov5s IRF640 1D11A IRF640 smd IRF640 applications note
Text: PD-9.374G International â ü Rectifier IRF640 HEXFET Power MOSFET • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements VDSS= 200V R DS on = 0 . 1 8 0 lD = 18A Description DATA
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OCR Scan
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PDF
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IRF640
T0-220
O-220
1RF640
1RF640S
3V IC LINEAR SMD
irf640a
RD540
ov5s
1D11A
IRF640 smd
IRF640 applications note
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