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    IRF740 400V 10A Search Results

    IRF740 400V 10A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    LT1354CS8#TRPBF Analog Devices 12MHz, 400V/us Op Amp Visit Analog Devices Buy
    LT1354IS8#PBF Analog Devices 12MHz, 400V/us Op Amp Visit Analog Devices Buy
    LT1354CN8#PBF Analog Devices 12MHz, 400V/us Op Amp Visit Analog Devices Buy
    LT1354IS8#TRPBF Analog Devices 12MHz, 400V/us Op Amp Visit Analog Devices Buy
    LT1354CS8#PBF Analog Devices 12MHz, 400V/us Op Amp Visit Analog Devices Buy

    IRF740 400V 10A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    irf740

    Abstract: power MOSFET IRF740 irf740 mosfet irf740 application IRF740 400V 10A
    Text: IRF740 N-channel 400V - 0.46Ω - 10A TO-220 PowerMESH II Power MOSFET General features Type VDSS @Tjmax RDS(on) ID IRF740 400V <0.55Ω 10A • Exceptional dv/dt capability ■ 100% avalanche tested ■ Low gate charge ■ Very low intrinsic capacitances


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    PDF IRF740 O-220 O-220 IRF740 IRF740@ power MOSFET IRF740 irf740 mosfet irf740 application IRF740 400V 10A

    IRF7405

    Abstract: irf740 irf740 mosfet power MOSFET IRF740 IRF740 application TO-220 DATASHEET IRF740 transistor equivalent irf740 JESD97
    Text: IRF740 N-channel 400V - 0.46Ω - 10A TO-220 PowerMESH II Power MOSFET General features Type VDSS @Tjmax RDS(on) ID IRF740 400V <0.55Ω 10A • Exceptional dv/dt capability ■ 100% avalanche tested ■ Low gate charge ■ Very low intrinsic capacitances


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    PDF IRF740 O-220 IRF7405 irf740 irf740 mosfet power MOSFET IRF740 IRF740 application TO-220 DATASHEET IRF740 transistor equivalent irf740 JESD97

    irf740

    Abstract: irf740 mosfet 53A2
    Text: IRF740 N-CHANNEL 400V - 0.46Ω - 10A TO-220 PowerMESH II MOSFET TYPE IRF740 • ■ ■ ■ ■ VDSS RDS on ID 400 V < 0.55 Ω 10 A TYPICAL RDS(on) = 0.46Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE VERY LOW INTRINSIC CAPACITANCES


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    PDF IRF740 O-220 irf740 irf740 mosfet 53A2

    IRF740

    Abstract: No abstract text available
    Text: IRF740 N-CHANNEL 400V - 0.46Ω - 10A TO-220 PowerMESH II MOSFET TYPE IRF740 • ■ ■ ■ ■ VDSS RDS on ID 400 V < 0.55 Ω 10 A TYPICAL RDS(on) = 0.46Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE VERY LOW INTRINSIC CAPACITANCES


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    PDF O-220 IRF740 IRF740

    Untitled

    Abstract: No abstract text available
    Text: <^/ v i, One. . 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 N-Channel MOSFET Transistor IRF740 0(2) o DESCRIPTION * -> • Drain Current-ID= 10A@ TC=25°C I • Drain Source Voltage: VDSS= 400V(Min)


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    PDF IRF740 O-220C

    power MOSFET IRF740

    Abstract: No abstract text available
    Text: IRF740 Data Sheet Title F74 bt A, 0V, 50 m, an- 10A, 400V, 0.550 Ohm, N-Channel Power MOSFET Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


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    PDF IRF740 TA17424 IRF740 power MOSFET IRF740

    irf740 mosfet

    Abstract: irf740 application note irf740 MOSFET IRF740 as switch TA17424 TB334
    Text: IRF740 Data Sheet January 2002 10A, 400V, 0.550 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of


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    PDF IRF740 O-220AB irf740 mosfet irf740 application note irf740 MOSFET IRF740 as switch TA17424 TB334

    irf740 mosfet

    Abstract: power MOSFET IRF740 transistor IRF740 TA17424 IRF740 TB334
    Text: IRF740 Data Sheet July 1999 10A, 400V, 0.550 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of


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    PDF IRF740 O-220AB irf740 mosfet power MOSFET IRF740 transistor IRF740 TA17424 IRF740 TB334

    SEC IRF740

    Abstract: No abstract text available
    Text: $GYDQFHG 3RZHU 026 7 IRF740 FEATURES BVDSS = 400 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 0.55Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 10 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 400V


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    PDF IRF740 O-220 SEC IRF740

    Untitled

    Abstract: No abstract text available
    Text: IRF740 N-channel 400V - 0.46Ω - 10A TO-220 PowerMESH II Power MOSFET General features VDSS @Tjmax Type RDS(on) ID ) s ( t c u d o ) r s ( P t c Description e t u e d l o o r s Internal schematic diagram P b e O t e l ) o s ( s t b Applications c u O


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    PDF IRF740 O-220

    gate drive circuit for power MOSFET IRF740

    Abstract: irf740 irf741 irf740 mosfet IRF740D IRF743 irf740 STAND FOR IRF740 ir
    Text: IRF740, IRF741, IRF742, IRF743 h a r r is SEMIC0NDUCT0R 8A and 10A, 350V and 400V, 0.55 and 0.80 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 8A and 10A, 350V and 400V • High Input Impedance These are N-Channel enhancement mode silicon gate


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    PDF IRF740, IRF741, IRF742, IRF743 TA17424. gate drive circuit for power MOSFET IRF740 irf740 irf741 irf740 mosfet IRF740D IRF743 irf740 STAND FOR IRF740 ir

    Untitled

    Abstract: No abstract text available
    Text: IRF740 Semiconductor Data Sheet July 1999 10A, 400V, 0.550 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


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    PDF IRF740 O-220AB

    F741

    Abstract: rf74 power MOSFET IRF740 irf740 mosfet IRF741 IRF740 ir TA17424 gate driver circuit IRF741 Transistor IRF743 IRF740
    Text: IRF740, IRF741, IRF742, IRF743 HARRIS a S E M I C O N D U C T O R 8A and 10A, 350V and 400V, 0.55 and 0.80 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 8A and 10A, 350V and 400V • High Input Impedance These are N-Channel enhancement mode silicon gate


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    PDF IRF740, IRF741, IRF742, IRF743 TB334 F741 rf74 power MOSFET IRF740 irf740 mosfet IRF741 IRF740 ir TA17424 gate driver circuit IRF741 Transistor IRF743 IRF740

    1RF740

    Abstract: mosfet 1RF740 IRF740 ir IRF740 ScansUX1020 ScansUX102 International Rectifier IRF740 irf740 mosfet
    Text: PD-9.375H International lïsRi Rectifier IRF740 HEXFET Power MOSFET • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements V DSS = 400V ^DS on = 0 - 5 5 0 lD = 10A Description Third Generation HEXFETs from international Rectifier provide the designer


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    PDF O-220 L50KQ 1RF740 mosfet 1RF740 IRF740 ir IRF740 ScansUX1020 ScansUX102 International Rectifier IRF740 irf740 mosfet

    Untitled

    Abstract: No abstract text available
    Text: IRF740 A d van ced Power MOSFET FEATURES B V DSS - 400 V ^D S o n = 0 .5 5 Î2 ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 10 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area TO-220 ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 400V


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    PDF IRF740 O-220

    power MOSFET IRF740

    Abstract: power MOSFET IRF740 driver circuit irf740 mosfet MOSFET IRF740 MOSFET IRF740 as switch PN channel MOSFET 10A Power MOSFET 50V 10A IRF740
    Text: IRF740 A dvanced Power MOSFET FEATURES BVDSS — 400 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ^D S o n = 0 -5 5 ÌÌ ♦ Lower Input Capacitance lD = 10 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10|xA (Max.) @ V DS = 400V


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    PDF IRF740 power MOSFET IRF740 power MOSFET IRF740 driver circuit irf740 mosfet MOSFET IRF740 MOSFET IRF740 as switch PN channel MOSFET 10A Power MOSFET 50V 10A IRF740

    VN64GA

    Abstract: 1rf820 IRF740 VN1001A 2N6658 IRF120 IRF122 IRF130 IRF132 IRF140
    Text: MOSPOWER Selector Guide MOSPOWER Selector Guide continued N-Channel MOSPOWER (Continued) Device FiC ^ T ' u TO-3 TO-22QAB Breakdown Voltage (Volts) 100 100 100 100 100 100 100 100 100 100 90 90 90 8CI 80 60 6Cl 60 60 60 60 60 60 60 60 60 60 60 40 40 35 35


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    PDF IRF150 IRF152 IRF140 IRF142 VN1000A IRF130 VN1001A IRF132 IRF120 IRF122 VN64GA 1rf820 IRF740 VN1001A 2N6658 IRF120 IRF122 IRF130 IRF132 IRF140

    VN64GA

    Abstract: 1rf820 irf150 IRF340 IRF742 diode 343 18a IRF740 IRF823 SILICONIX IRF740 IRF440
    Text: Ü Ü A C D ^ U / C D M i v i a Dr/\Wi iv iv ^ i v T T k iv r i i i i i v t i v u v iw i C A lA A ^ / \ r f^ .n \M é g ^ i ^ v i v i w u iv i^ 1-2 MOSPOWER Prime Product Selector Guide *2 0 0 °C RATING I i Packages: u BVqss Volts 450-500 TO-3 TO-220 Siliconix


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    PDF O-220 O-237 O-202 IRF450 IRF840 IRF440 VN5001D/IRF830 VNP002A* IRF820 VN5001A/IRF430 VN64GA 1rf820 irf150 IRF340 IRF742 diode 343 18a IRF740 IRF823 SILICONIX IRF740

    irf740

    Abstract: irf740 mosfet power MOSFET IRF740 IRF740 ir irf741 F7403
    Text: N-CHANNEL POWER MOSFETS IRF740/741/742/743 FEATURES • • • • • • • Lower Ros ON Improved inductive ruggedness Fast switching times Rugged polysllicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability


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    PDF IRF740/741/742/743 IRF740 IRF741 IRF742 IRF743 irf740 mosfet power MOSFET IRF740 IRF740 ir F7403

    IRF420

    Abstract: IRF422 IRF430 IRF432 IRF440 IRF442 IRF450 IRF452 VN5001A VN5002A
    Text: !R Selector Guide ] MOSPOWER Selector Guide B Siliconix N-Channel MOSPOWER Device u TO-3 Breakdown Voltage Volts 500 500 500 500 500 500 500 500 500 500 500 450 450 450 450 450 450 450 450 450 450 450 400 400 400 400 400 400 400 400 400 400 400 350 350 350


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    PDF IRF450 IRF452 IRF440 IRF442 VNP002A* VN5001A IRF430 VN5002A IRF432 IRF420 IRF420 IRF422 IRF430 IRF432 IRF440 IRF442 IRF450 IRF452 VN5001A VN5002A

    IRF740

    Abstract: diode lt 341 IRFP340 LT 741 S IRF740 400V 10A power MOSFET IRF740 irf741 irf742 irf740 mosfet IRFP341
    Text: IRF740/741/742/743 IRFP340/341/342/343 N-CHANNEL POWER MOSFETS FEATURES • • • • • • • Lower Rds ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area


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    PDF IRF740/741/742/743 IRFP340/341/342/343 40/IRFP34Û IRF741-IRFP341 IRF742/IRFP342 IRF743/IRFP343 IRF740 diode lt 341 IRFP340 LT 741 S IRF740 400V 10A power MOSFET IRF740 irf741 irf742 irf740 mosfet IRFP341

    Untitled

    Abstract: No abstract text available
    Text: IRF740/741/742/743 IRFP340/341/342/343 SAMSUNG ELECTRONICS INC N-CHANNEL POWER MOSFETS SÎ16K b?E D FEATURES • • • • • • • Lower Rds on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance


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    PDF IRF740/741/742/743 IRFP340/341/342/343 F740/IRFP340 IRF741 /IRFP341 F742/IRFP342 F743/IRFP343 IRF740 IRFP340 IRF741

    irf740 equivalent

    Abstract: irf340 "cross reference" IRF450 equivalent 2SK259 irf150 2SK134 equivalent 2sk135 equivalent IRF240 IRF351 2SK132
    Text: MOSPOWER Cross Reference List MOSPOWER Cross Reference List HEWLETT-PACKARD Industry Part No. HPWR-6501 HPWR-6502 HPWR-6503 HPWR-6504 BV d s S Volts rDS(on) (Ohms) Package 450 400 450 400 0.85 0.74 1.0 1.0 TO-3 TO -3 TO-3 TO-3 100 120 140 160 180 200 160


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    PDF PWR-6501 IRF441 HPWR-6502 IRF340 HPWR-6503 HPWR-6504 VN4001A 2SK132 IRF122 irf740 equivalent irf340 "cross reference" IRF450 equivalent 2SK259 irf150 2SK134 equivalent 2sk135 equivalent IRF240 IRF351

    irf740 spice model

    Abstract: IRF740
    Text: HE D I 4âSS452 QÛ0ÔS44 0 | Data Sheet No. PD-9.375G INTERNATIONAL RECTIFIER T INTERNATIONAL. RECTIFIER l O R REPETITIVE AVALANCHE AND dv/dt RATED* HEXFET TRANSISTORS IRF740 IRF74Ì IRF742 N-CHANNEL IRF743 Product Summary 400 Volt, 0.55 Ohm HEXFET T0-220AB Plastic Package


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    PDF SS452 IRF740 IRF74Ã IRF742 IRF743 T0-220AB IRF741 C-299 irf740 spice model IRF740