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    IRF9531 MOSFET Search Results

    IRF9531 MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCK424G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK425G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK423G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK422G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation

    IRF9531 MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    IRF9530

    Abstract: IRF9531 IRF9530 mosfet
    Text: S E M I C O N D U C T O R IRF9530, IRF9531, IRF9532, IRF9533, RF1S9530, RF1S9530SM 10A and -12A, -80V and -100V, 0.3 and 0.4 Ohm, P-Channel Power MOSFETs January 1998 Features Description • -10A and -12A, -80V and -100V These are P-Channel enhancement mode silicon gate


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    IRF9530, IRF9531, IRF9532, IRF9533, RF1S9530, RF1S9530SM -100V, IRF9530 IRF9531 IRF9530 mosfet PDF

    laptop adapter circuit by delta electronics

    Abstract: varta 57078 cell phone charger 3.7 VDC motorola 12v varta lead acid battery IRF510 SEC mosfet IRF510 SEC saft rectifier 230v ac to dc mobile charger circuit irf510 switch microcontroller 85018 bit
    Text: Application Note 64 August 1996 Using the LTC1325 Battery Management IC Anthony Ng, Peter Schwartz, Robert Reay, Richard Markell INTRODUCTION For a variety of reasons, it is desirable to charge batteries as rapidly as possible. At the same time, overcharging


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    LTC1325 S-191 AN64-44 laptop adapter circuit by delta electronics varta 57078 cell phone charger 3.7 VDC motorola 12v varta lead acid battery IRF510 SEC mosfet IRF510 SEC saft rectifier 230v ac to dc mobile charger circuit irf510 switch microcontroller 85018 bit PDF

    f9530

    Abstract: No abstract text available
    Text: *f*53S IRF9530, IRF9531, IRF9532, IRF9533, RF1S9530, RF1S9530SM 10A and -12A, -80V and -100V, 0.3 and 0.4 Ohm, P-Channel Power MOSFETs January 1998 Features Description • -10A and -12A, -80V and -100V • High Input Impedance These are P-Channel enhancement mode silicon gate


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    IRF9530, IRF9531, IRF9532, IRF9533, RF1S9530, RF1S9530SM -100V, -100V f9530 PDF

    irf9530

    Abstract: irf9532 JEDEC TO-263A IRF9531
    Text: H A F R F R IS S E M I C O N D U C T O R IRF9530, IRF9531, IRF9532, IRF9533, RF1S9530, RF1S9530SM 10A and -12A, -80V and -100V, 0.3 and 0.4 Ohm, P-Channel Power MOSFETs January 1998 Features Description • -10A and -12A, -80V and -100V These are P-Channel enhancement mode silicon gate


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    IRF9530, IRF9531, IRF9532, IRF9533, RF1S9530, RF1S9530SM -100V, IRF9532 irf9530 JEDEC TO-263A IRF9531 PDF

    F9530

    Abstract: diode C339 IRF9530 C337 W 63 complementary of irf9530 C337 W IRF9530 complementary diode c341 IRF9532 IR 9530
    Text: HE 0 I 4A5S452 000 fl5âfl fi | Data Sheet No. PD-9.320F INTERNATIONAL R E C T I F I E R INTERNATIONAL RECTIFIER IOR HEXFET TRANSISTORS IRFS530 IRF9531 P-Channel IRFS532 IRFS533 -100 Volt, 0.3 Ohm HEXFET T0-220AB Plastic Package Features: The HEXFET® technology is the key to International Rectifier’s


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    T0-220AB C-341 43S54S2 IRF9530, IRF9531, IRF9532, IRF9533 T-39-21 C-342 F9530 diode C339 IRF9530 C337 W 63 complementary of irf9530 C337 W IRF9530 complementary diode c341 IRF9532 IR 9530 PDF

    IRF9530 mosfet circuit diagram

    Abstract: IRF9530 mosfet irf9530 IRF9531 IRF9532 iaf9530 40C1 IRF9533 040c1 92CS-43262
    Text: Rugged Power MOSFETs File Number 2221 IRF9530, IRF9531 IRF9532, IRF9533 Avalanche-Energy-Rated P-Channel Power MOSFETs TE R M IN A L DIAGRAM -1 0 A , a n d -1 2 A , -6 0 V a n d -1 0 0 V rDsiom = 0 .3 0 Q a n d 0 .4 0 0 Features: • S ingle pulse avalanche e n ergy rated


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    IRF9530, IRF9531 IRF9532, IRF9533 -100V 92CS-43262 IRF9531, IRF9532 IRF9533 IRF9530 mosfet circuit diagram IRF9530 mosfet irf9530 IRF9531 iaf9530 40C1 040c1 92CS-43262 PDF

    IRF9530

    Abstract: IRF9530 mosfet F9530 diode 9532 IRF9530, IRF9530 P-channel power
    Text: P-CHANNEL POWER MOSFETS IRF9530/9531/9532/9533 FEATURES • • • • • • • Lower R ds ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high tem perature reliability


    OCR Scan
    IRF9530/9531/9532/9533 IRF9530 IRF9531 IRF9532 F9533 IRF9530 mosfet F9530 diode 9532 IRF9530, IRF9530 P-channel power PDF

    1rf9530

    Abstract: IRF9530 IRF9530 mosfet IRF9531 L 9132 IRF9530* p-channel power MOSFET IRF9532 9133 1RF953 IRFP9131
    Text: SA M S UN G E L E C T R O N I C S INC b4E D IR F 9 5 3 0 /9 5 3 1 Z9 5 3 2 / 9 5 3 3 I R F P 9 1 3 0 /9 1 3 1 /9 1 3 2 /9 1 3 3 j • T T b H l H E D D I S E S M Ö D 1! P-CHANNEL POWER MOSFETS FEATU RES • • • • • • • TO-220 Lower R d s o n


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    IRF9530/9531Z9532/9533 IRFP9130/9131/9132/9133 IRF9530/IRFP9130 -100V IRF9531 /IRFP91 IRF9532/IRFP91 IRF9533/IRFP9133 O-220 1rf9530 IRF9530 IRF9530 mosfet L 9132 IRF9530* p-channel power MOSFET IRF9532 9133 1RF953 IRFP9131 PDF

    f9530

    Abstract: IRF9530 L 9132 diode 9532 IRF9530 mosfet IRF9530* p-channel power MOSFET 9532 mosfet IR mosfets OA 91 diode ir 9133
    Text: IRF9530/9531 /9532Z9533 IRFP9130/9131 /9132/9133 P-CHANNEL POWER MOSFETS FEATURES • • • • • • • TO-220 Lower Ros ON Improved inductive ruggedness Fast switching tim es Rugged polysilicon gate cell structure Lower input capacitance Extended sate operating area


    OCR Scan
    IRF9530/9531 /9532Z9533 IRFP9130/9131 O-220 F9530/9531 F9531 /IRFP91 IRFP9130/91 IRF9530/9531/9532/9533 IRFP9130/9131/9132/9133 f9530 IRF9530 L 9132 diode 9532 IRF9530 mosfet IRF9530* p-channel power MOSFET 9532 mosfet IR mosfets OA 91 diode ir 9133 PDF

    Untitled

    Abstract: No abstract text available
    Text: P-CHANNEL POWER MOSFETS IRF9530/9531 FEATURES TO-220 • Lower R d s <on • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability


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    IRF9530/9531 O-220 IRF9530 -100V IRF9531 PDF

    F9530

    Abstract: 9533E IRF9530
    Text: H a r r is IRF9530, IR F 9531 IRF 9532 IRF9533 , Avalanche Energy Rated P-Channel Power MOSFETs January 1 9 9 4 Package F e a tu re s T 0 -2 2 0 A B TOP VIEW • -10 A and -1 2 A, -8 0 V and -100V • ro S O N “ 0 .3 f i and 0 .4 ÎÏ • Single Pulse Avalanche Energy Rated


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    IRF9530, IRF9533 -100V IRF9531, IRF9532 IRF9533 IRF9532, F9533 92CS-43327 F9530 9533E IRF9530 PDF

    IRF9511

    Abstract: IRF9Z15 IRF9613 IRF9632 IRF9631 IRF9643 IRF9642 IRF9641
    Text: FUNCTION GUIDE POWER MOSFETs TO-220 P-CHANNEL B Vdss V Part Number ID(onXA) RDS(onXn) -4 .0 0 -4 .7 0 -8 .9 0 -9 .8 0 -15 .0 0 -18 .0 0 0.70 0.50 0.33 0.28 0.21 0.14 IRF9Z12 IRF9Z10 IRF9Z22 IRF9Z20 IRF9Z32 IRF9Z30 - 60.00 -2 .5 0 -3 .0 0 -4 .0 0 -4 .7 0


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    O-220 IRF9Z12 IRF9Z10 IRF9Z22 IRF9Z20 IRF9Z32 IRF9Z30 IRF9513 IRF9511 IRF9Z15 IRF9613 IRF9632 IRF9631 IRF9643 IRF9642 IRF9641 PDF

    SSP6N60

    Abstract: SSP5N70 IRF9511 IRF9Z34 ssp5n80 ssp7n55 IRF9521 SSP4N70 SSP3N70 IRF9631
    Text: MOSFETs FUNCTION GUIDE 10-220 N-CHANNEL Continued Part Number SSP4N55 SSP6N55 BVossfV) lD(onj(A) RDs(on)(8) R0jc(K/W) PDfWatt) 550 4.00 6.00 2.500 1.67 1.00 75 125 0.90 140 302 307 2.500 1.800 1.67 1.200 0.90 75 125 140 302 307 5.000 3.500 2.500 1.67 75 125


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    SSP4N55 SSP6N55 SSP7N55 SSP4N60 SSP6N60 SSP7N60 SSP3N70 SSP4N70 SSP5N70 SSP3N80 IRF9511 IRF9Z34 ssp5n80 IRF9521 IRF9631 PDF

    IRF740 "direct replacement"

    Abstract: irf9640 REPLACEMENT GUIDE IRF9540 replacement IRF640 irf510 2Sk350 HITACHI IRF9613 rca9213a buz11 cross reference sgsp467 fu120
    Text: CROSS REFERENCE GUIDE POWER MOSFETs Inter­ national Rectifier SAMSUNG Direct Replace­ ment Inter­ national Rectifier SAMSUNG Direct Replace­ ment Inter­ national Rectifier SAMSUNG Direct Replace­ ment Inter­ national Rectifier SAMSUNG Direct Replace­


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    IRF510 IRF511 IRF512 IRF513 IRF520 IRF521 IRF522 IRF523 IRF610 IRF611 IRF740 "direct replacement" irf9640 REPLACEMENT GUIDE IRF9540 replacement IRF640 irf510 2Sk350 HITACHI IRF9613 rca9213a buz11 cross reference sgsp467 fu120 PDF

    IRF9240

    Abstract: IRF9143 IRF9513 IRF9632 irf9243 2n6804 IRF9241 IRF9511 IRFD9110 IRF9132
    Text: TH On SON / D I S T R I B U T O R SflE D TCSK Power MOSFETs Rugged-Series Power MOSFETs — P-Channel P aci ag e — • M axim u r n R a tin g s bvdss (V 60 100 150 20 0 <d s (A) r DS(O N) O HM S e AS (m i) 0.6 0.8 2.5 3 3.5 4 5 5.5 6 6.5 10 12 19 15 25


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    O-204 O-205 T0-220 O-247 irfd9113 irfd9123 irf9513 irf9511 irff9123 irff9121 IRF9240 IRF9143 IRF9513 IRF9632 irf9243 2n6804 IRF9241 IRF9511 IRFD9110 IRF9132 PDF

    1rf730

    Abstract: IRF9513 IRF9521 irfbf30 IRFBG30 THOMSON DISTRIBUTOR 58e d IRF9511 IRF9523 IRFBC30 IRFBE32
    Text: THO d SO N/ D I S T R I B U T O R SflE D • T02t.ñ73 0 D D S Ô D 2 52S ■ International Rectifier TCSK HEXFET Power MOSFETs Plastic Insertable Package TO-220 N-Channel >DM Pu'*« Drain Current Amps Pp Max Power Dissipation (Watts) 1.7 2.0 2.8 3.3 4.5


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    O-220 IRF712 T0-22QAB IRF710 IRF722 IRF720 IRF732 IRF730 IRF742 IRF740 1rf730 IRF9513 IRF9521 irfbf30 IRFBG30 THOMSON DISTRIBUTOR 58e d IRF9511 IRF9523 IRFBC30 IRFBE32 PDF

    p12p10

    Abstract: IRF9530* p-channel power MOSFET 2N6898 Power MOSFETs Field-Effect Transistors IRFP9140/P9141 irf9640 mosfet IRF9530 P-channel power p-channel irfp9240
    Text: - POWER MOSFETs 5 P-CHANNEL POWER MOSFETs PAGE 2N6804 Avalanche Energy Rated P-Channel Power M OSFET. 5-3 2N6849 Avalanche Energy Rated P-Channel Power MOSFET. 5-8 2N6851


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    2N6804 2N6849 2N6851 2N6895 2N6896 2N6897 2N6898 IRF9130, IRF9131, IRF9132, p12p10 IRF9530* p-channel power MOSFET Power MOSFETs Field-Effect Transistors IRFP9140/P9141 irf9640 mosfet IRF9530 P-channel power p-channel irfp9240 PDF

    IRF 850 mosfet

    Abstract: MOSFET IRF 635 MOSFET IRF 630 MOSFET IRF 713 IRF N-Channel Power MOSFETs IRF 740 N IRF 840 MOSFET IRF 450 MOSFET P Channel Power MOSFET IRF irf 540 mosfet
    Text: FUNCTION GUIDE POWER MOSFETs N-CHANNEL MOSFET TO-220 Vos Id 50 60 80 100 120 150 180 200 2 2.5 350 IRF IRF 713 712 IRF IRF IRF 711 710 1.3 1.5 250 400 450 500 550 600 700 800 850 900 IRF IRF IRF IRF IRF SS P SSP 613 612 614 823 822 2N85 2N90 IRF IRF IRF IRF


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    O-220 IR9523 IRF9522 IRF9513 IRF9511 IRF9512 IRF9510 IRF9623 IRF9621 IRF9622 IRF 850 mosfet MOSFET IRF 635 MOSFET IRF 630 MOSFET IRF 713 IRF N-Channel Power MOSFETs IRF 740 N IRF 840 MOSFET IRF 450 MOSFET P Channel Power MOSFET IRF irf 540 mosfet PDF

    1RFP9240

    Abstract: irfp 9640 1RF9540 l 9143 1rfp9140 L 9141 1RF9240 IRF 409 IRFP9I40 IRF95XX
    Text: '"7964142 S A M S U N G SEM_ICONDUCTO ,> ." IRF9130/9131/9132/9133 T " IRFP9130/9131 /9132/9133 IRF9530/9531Z9532/9533 <*I b 4 1 4 d UUU54Ü5 _ ' P-CHANNEL Preliminary Specifications DE 1 7 ^ 4 1 4 2 - 1 0 0 Volt, 0.30 Ohm SFET PRODUCT SUMMARY 0D05405 ? Part Number


    OCR Scan
    IRF9130/9131/9132/9133 IRFP9130/9131 IRF9530/9531Z9532/9533 UUU54DS 7Tti4145 IRF/IRFP9130, IRF9530 -100V IRF/IRFP9131, IRF9531 1RFP9240 irfp 9640 1RF9540 l 9143 1rfp9140 L 9141 1RF9240 IRF 409 IRFP9I40 IRF95XX PDF

    Transistor c 4138

    Abstract: TIP36 Application Note RFK25 IRF540 p channel
    Text: IN T E G R A T E D C IR C U IT S y UNITRODE High Efficiency Regulator Controller FEATURES • Complete Control fo r a High Current, Low Dropout, Linear Regulator • Fixed 5V or Adjustable O utput Voltage • Accurate 2.5A C urrent L im itin g w ith Foldback


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    UC1835 UC1836 UC2835 UC2836 UC3835 UC3836 TIP30 D41D4 TIP32 D45C2 Transistor c 4138 TIP36 Application Note RFK25 IRF540 p channel PDF

    IFRZ44

    Abstract: IRFZ43 KA3842D irf510 switch TRANSISTOR MC7805CT KA336Z Transistor mc7812ct high voltage pnp transistor 700v IRFZ44 PNP KS82C670N
    Text: PRODUCT INDEX ALPHA NUMERIC INDEX Part numbers In BOLD are preferred standard parts. PART NO. 2N3904 2N3906 2N4400 2N4401 2N4402 2N4403 2N5087 2NS088 2NS551 2N6S15 IRF510 IRF511 IRF512 IRF513 IRF520 IRF521 IRF522 IRF523 IRFS30 IRF531 IRF532 IRF533 IRF540 IRF541


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    2N3904 2N3906 2N4400 2N4401 2N4402 2N4403 2N5087 2NS088 2NS551 2N6S15 IFRZ44 IRFZ43 KA3842D irf510 switch TRANSISTOR MC7805CT KA336Z Transistor mc7812ct high voltage pnp transistor 700v IRFZ44 PNP KS82C670N PDF

    Untitled

    Abstract: No abstract text available
    Text: y IN T E G R A T E D C IR C U IT B UNITRODE High Efficiency Regulator Controller DESCRIPTION The U C 1 8 3 5 /6 fa m ilie s of linear controllers, packaged in 8-pin m ini-dips, are optim ized fo r the design of low cost, low dropout, linear regulators. U sing an external pass elem ent,


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    TIP30 D41D4 TIP32 D45C2 D45H5 MJE6040 TIP36 2N6666* TIP36 2N6648* PDF

    MTM13N50E

    Abstract: P40N10 24N40 p50n05 8n50e Power MOSFET Cross Reference Guide motorola 20n50e TP50N05E IRF510 mosfet irf640 33N10E
    Text: ir tmos Cross-Reference The follow ing table represents a cro ss-re fe re n ce guide for all T M O S P ow er M O SFETs w hich are m an ufacture d directly by M otorola. W here the M otorola part nu m be r differs from the Industry part num ber, the M otorola de vice is a “form , fit and fu n ctio n ”


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    BUZ10 BUZ11 BUZ11A BUZ11S2 BUZ15 BUZ171 BUZ20 BUZ21 BUZ23 BUZ31 MTM13N50E P40N10 24N40 p50n05 8n50e Power MOSFET Cross Reference Guide motorola 20n50e TP50N05E IRF510 mosfet irf640 33N10E PDF

    Self-Oscillating Flyback Converters

    Abstract: 74C00 gate step up DC DC converter in 6v out 9V 2 way tv splitter circuit 16-loop 74c00 Series IC 1N4148 2N2907A 2N5434 LT1004
    Text: um A pplication Note 8 May 1985 TECHNOLOGY Power C onditioning Techniques for Batteries Jim W illiam s Declining power requirements for circuitry have made battery operation desirable and common. In many circum­ stances the battery voltage may be applied directly to


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    LT1013 30kHz 15V0UT V01JT Self-Oscillating Flyback Converters 74C00 gate step up DC DC converter in 6v out 9V 2 way tv splitter circuit 16-loop 74c00 Series IC 1N4148 2N2907A 2N5434 LT1004 PDF