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    IRF9623 Search Results

    IRF9623 Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRF9623 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRF9623 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    IRF9623 International Rectifier TO-220 Plastic Package HEXFETs Scan PDF
    IRF9623 International Rectifier TO-220 / TO-247 HEXFET Power MOSFETs Scan PDF
    IRF9623 Unknown FET Data Book Scan PDF
    IRF9623 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRF9623 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    IRF9623 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    IRF9623 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    IRF9623 Vishay Siliconix Shortform Siliconix Datasheet Short Form PDF

    IRF9623 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    IRF9622

    Abstract: IRF9620 IRF9623 IRF9621 TB334
    Text: IRF9620, IRF9621, IRF9622, IRF9623 S E M I C O N D U C T O R -3A and -3.5A, -150V and -200V, 1.5 and 2.4 Ohm, P-Channel Power MOSFETs July 1998 Features Description • -3A and -3.5A, -150V and -200V These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    Original
    IRF9620, IRF9621, IRF9622, IRF9623 -150V -200V, -200V IRF9622 IRF9620 IRF9623 IRF9621 TB334 PDF

    YTA630

    Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
    Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509


    Original
    2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620 PDF

    irf P-Channel MOSFET audio

    Abstract: IRF610 complementary F9622 IRF9623 power MOSFET IRF610 IRF9621 rf9620 irf9622 k 3919 F9620
    Text: HE D I MÖSS452 INTERNATIONAL GOüöbDb Data Sheet No. PD-9.351E b | RECTIFIER T-39-19 INTERNATIONAL RECTIFIER TOR HEXFET TRANSISTORS IRFS620 IRFSG21 P-CHANNEL aoo VOLT IRF9GSS POWER MOSFETs IRF9623 -200 Volt, 1.5 Ohm HEXFET T0-220AB Plastic Package Features:


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    SS452 T-39-19 IRFS620 IRFSG21 T0-220AB IRF9620, IRF9621, IRF9622, IRF9623 irf P-Channel MOSFET audio IRF610 complementary F9622 power MOSFET IRF610 IRF9621 rf9620 irf9622 k 3919 F9620 PDF

    IRF9670

    Abstract: IRF9622 CTL04 DK QF DIODE dmosfet irf9620 IM621 359 AU IRF9623 IRF9523
    Text: Data Sheet No. PD-9.351E in t e r n a t io n a l r e c t i f i e r HEXFET TRANSISTORS IRF962Q IRF96S1 P-CHANIMEL 200 VOLT POWER MOSFETs IRFS622 IRF9623 -200 Volt, 1.5 Ohm H E X FE T T0-220A B Plastic Package T h e H E X F E T * te ch n o lo gy la th e h e y to im em afconai R e c tifie rs


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    O-220AB IRF610 05BVOSS C-359 IRF9620, IRF9621, IRF9622, IRF9623 C-360 IRF9670 IRF9622 CTL04 DK QF DIODE dmosfet irf9620 IM621 359 AU IRF9523 PDF

    Untitled

    Abstract: No abstract text available
    Text: h a r r IRF9620, IRF9621, IRF9622, IRF9623 i s s e m i c o n d u c t o r -3A and -3.5A, -150V and -200V, 1.5 and 2.4 Ohm, P-Channel Power MOSFETs July 1998 Features Description • -3A and -3.5A, -150V and -200V • High Input Impedance These are P-Channel enhancement mode silicon gate


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    IRF9620, IRF9621, IRF9622, IRF9623 -150V -200V, -200V PDF

    irf9620

    Abstract: IRF9622 irf9623 IRF9621 st 9622 9620 ir
    Text: Rugged Power MOSFETs File Number IRF9620, IRF9621 IRF9622, IRF9623 2283 Avalanche-Energy-Rated P-Channel Power MOSFETs -3 A and -3.5 A, -150 V and -200 V rDsioni = 1 .5 0 and 2.4 f i t e r m i n a l d ia g r a m Features: • Single pulse avalanche energy rated


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    IRF9620, IRF9621 IRF9622, IRF9623 92CS-43262 IRF9621, IRF9622 IRF9623 irf9620 IRF9621 st 9622 9620 ir PDF

    IR9620

    Abstract: IRF9620 RF9622 IRF9622 IRF9621 IRF9623 IRF high current p-channel RF9623
    Text: H A R R IS IR F 9 6 2 0 , IR F 9 6 2 1 IRF9622, IRF9623 Avalanche Energy Rated P-Channe! Power MOSFETs August 1991 F ea tu re s Package T0-220A B TOP VIEW • -3 A and -3.5A, -150V and -20 0 V • rDS ON = and 2.4Q • Single Pulse Avalanche Energy Rated


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    IRF9620, fRF9621 IRF9622, IRF9623 -150V -200V IRF9621, IRF9B22 IR9620 IRF9620 RF9622 IRF9622 IRF9621 IRF high current p-channel RF9623 PDF

    F9622

    Abstract: IRF9622 NP-Q40 F962
    Text: HARRIS IR F9620, IRF9621 IR F9622, IRF9623 Avalanche Energy Rated P-Channel Power MOSFETs August 1991 F e a tu re s Package T 0 -2 2 0 A B • -3A and -3.5A , -1 5 0 V and -200V • r D S O N TOP VIEW = 1 -5 0 and 2 .4 Cl • Single Pulse Avalanche Energy Rated


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    F9620, IRF9621 F9622, IRF9623 -200V IRF9620, IRF9621, IRF9622 IRF9623 RF9620, F9622 NP-Q40 F962 PDF

    IRF9521

    Abstract: IRF9612 irfbf30 9390 IRF830 International rectifier IRF9512 IRF9523 irfbe30 9351 IRFBG32
    Text: PLASTIC PACKAGE HEXFETs INTERNATIONAL RECTIFIER 2bE D INTERNATIONAL. RECTIFIER MässMsa oüiassb s • IOR T - 3 ^ - 0 3 TO-220 Package N-CHANNEL Types VDS r D S 0N (max) Iq cont <0M PO T c - 2 5 °C pulsed max A W IRF840 0.85 8.0 3 2.0 125 IR F8 4 2 IRF83 0


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    O-220 IRF840 IRF842 IRF830 IRF832 IRF820 IRF822 IRFBC40 IRFBC42 IRFBC30 IRF9521 IRF9612 irfbf30 9390 IRF830 International rectifier IRF9512 IRF9523 irfbe30 9351 IRFBG32 PDF

    1RF530

    Abstract: 1RF540 1rf520 RF543 IRF530 IRF532 IRF533 IRF541 IRF542 IRF543
    Text: - f * m V Vd s £> tt £ £ Vg s eg. tS Ta=25*0 Id Pd V g s th) loss I gss or € * Vdg Hr (V) (V) * /CH * /CH (A) m (nA) Vg s (V) ( m A) Vd s (V) min max (V) (V) Ciss g fs Coss ft & 11 m Vg s =0 (max) *typ V g s ( Q ) (V) *typ (A) Id (A) Vg s (V) *typ (S)


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    1RF522 O-220AB RF523 IRF530 IRF630 IRF631 T0-220AB 1RF530 1RF540 1rf520 RF543 IRF532 IRF533 IRF541 IRF542 IRF543 PDF

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC bME » • IRF9620/9621 /9622/9623 7 S b 4142 0D 12271 ‘H û «SMlSK P-CHANNEL POWER MOSFETS FEATURES • • • • • • • Lower Ros ON Improved inductive ru gge d n e ss Fast sw itching tim es R u g ge d polysilicon gate cell structure


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    IRF9620/9621 IRF9622 F9621 IRF9620 IRF9621 IRF9623 IRF9620/9621Ã Q01E57b PDF

    F9222

    Abstract: IRF9220 f 9222 l ir 9621 f9223 IRF9222 F9222 L F9222 T IRFP9620 IRFP9220
    Text: IRF9620/9621 /9622/9623 IRFP9220/9221 /9222/9223 IRF9220/92211922219223 P-CHANNEL POWER MOSFETS FEATURES • Low er R ds ON • • • • • • Improved inductive ruggedness Fast switching times Rugged polysiiicon gate cell structure Lower input capacitance


    OCR Scan
    IRF9620/9621 IRFP9220/9221 IRF9220/9221 F9620/IR IRF9220 IRF9621 /IRFP9221 IRF9221 F9622/IR IRF9222 F9222 f 9222 l ir 9621 f9223 F9222 L F9222 T IRFP9620 IRFP9220 PDF

    EATON CM20A

    Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
    Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main


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    IRFP040

    Abstract: IRFP141 IRFP142 IRFP143 IRF9613 irfp245 IRF9620 IRF9632 IRF9643
    Text: HEXFET Power MOSFETs International S Rectifier Plastic Insertable Package TO-220 P-Channel s Drain Source Voltage Volts Vq Part Number RDS(on) On-Siate Resistance (Ohms) I q Continuous Drain Current 25°C Case (Amps) 'D M Pu'*« Drain Current (Amps) P q Max


    OCR Scan
    O-220 IRF9512 IRF9510 IRF9522 IRF9520 IRF9532 IRF9530 IRF9542 IRF9540 IRF9613 IRFP040 IRFP141 IRFP142 IRFP143 irfp245 IRF9620 IRF9632 IRF9643 PDF

    1RF9540

    Abstract: IRF9141 IRF9142 IRF9510 IRF9523 IRF9612 IRF9613 IRF9540 IRF9541 IRF9620
    Text: - 25 6 - m a tt f m ± t Vg s t Vd s or Vd g % V (V) « Æ n fê (Ta=25^) Ig s s Pd Id * /CH * /CH (A) (W) V g s th) Id s s min (nA) Vg s (V) (UA) Vd s (V) (V) max (V) % Id (nA) Í# F Ds(on) Vd s = Vg s te (Ta=25t) b(Qn) Ciss g fs Coss Crss ft JE m m V g s =0


    OCR Scan
    IRF9540 O-220AB IRF9541 F9542 O-220 IRF9543 IRF961G 1RF9540 IRF9141 IRF9142 IRF9510 IRF9523 IRF9612 IRF9613 IRF9620 PDF

    1RF630

    Abstract: irf810 1RF540 1RF530 1RF620 1rf740 ferranti 1RF634 RF543 IRF9613
    Text: - 244 - ä! € tt f # t Vd s or € * $ fg Ta=25‘ C Vg s • f Vd g )V (V) (V) ie. IGSS Pd Id * /CH * /CH (A) m Vg s th) ID S S max (nA) Vg s (V) (MA) Vd s (V) 14 Coss Crss 5* m. ffi % V g s =0 *typ (A) Id (A) Vg s (V) *typ (S) (*typ) (max) (pF) Id (A)


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    Ta-2510) SD210 TD-12 SD211 SD212 S0213 O-220AB IRF630 IRF631 1RF630 irf810 1RF540 1RF530 1RF620 1rf740 ferranti 1RF634 RF543 IRF9613 PDF

    1RF9620

    Abstract: 1RF9540 1RF9622 IRF9532 IRF9522 IRF9523 IRF9611 IRF9630 samsung IRF9613 IRF9240
    Text: - W. f Ä * £ fê 13=25*0 m % tt % IRF9240 tR F 9 2 41 SAMSUNG SAMSUNG IRF9242 IRF9243 IRF9510 SAMSUNG SAMSUNG SAMSUNG 1RF9511 IRF9512 IRF9513 SAMSUNG SAMSUNG SAMSUNG 1RF9520 IRF9521 IRF9522 IRF9523 IRF953Ü IRF9531 IRF9532 IRF9533 IRF954Q IRF9541 íR F 9 542


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    -25cC) IRF9240 IRFS241 25F9542 O-220 IRF9543 IRF961G IRF9612 1RF9620 1RF9540 1RF9622 IRF9532 IRF9522 IRF9523 IRF9611 IRF9630 samsung IRF9613 PDF

    p12p10

    Abstract: IRF9530* p-channel power MOSFET 2N6898 Power MOSFETs Field-Effect Transistors IRFP9140/P9141 irf9640 mosfet IRF9530 P-channel power p-channel irfp9240
    Text: - POWER MOSFETs 5 P-CHANNEL POWER MOSFETs PAGE 2N6804 Avalanche Energy Rated P-Channel Power M OSFET. 5-3 2N6849 Avalanche Energy Rated P-Channel Power MOSFET. 5-8 2N6851


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    2N6804 2N6849 2N6851 2N6895 2N6896 2N6897 2N6898 IRF9130, IRF9131, IRF9132, p12p10 IRF9530* p-channel power MOSFET Power MOSFETs Field-Effect Transistors IRFP9140/P9141 irf9640 mosfet IRF9530 P-channel power p-channel irfp9240 PDF

    IRF 544 N MOSFET

    Abstract: Spice 2 computer models for hexfets 4af2NPP IR transistor D586 induction cooker fault finding circuit diagrams TRANSISTOR mos fet D482 electronics digest transistor D357 equivalent D515 transistor 1RF511
    Text: International S R ectifier HEXFET DAIABOOK POWER MOSFET APPLICATION AND PRODUCT DATA 1985 THIRD EDITION PUBLISHED BY INTERNATIONAL RECTIFIER, 233 KANSAS ST., EL SEGUNDO, CALIFORNIA 90245 The information presented in this DATABOOK is believed to be accurate and reliable. However, International Rectifier can assume no


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    MTM13N50E

    Abstract: P40N10 24N40 p50n05 8n50e Power MOSFET Cross Reference Guide motorola 20n50e TP50N05E IRF510 mosfet irf640 33N10E
    Text: ir tmos Cross-Reference The follow ing table represents a cro ss-re fe re n ce guide for all T M O S P ow er M O SFETs w hich are m an ufacture d directly by M otorola. W here the M otorola part nu m be r differs from the Industry part num ber, the M otorola de vice is a “form , fit and fu n ctio n ”


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    BUZ10 BUZ11 BUZ11A BUZ11S2 BUZ15 BUZ171 BUZ20 BUZ21 BUZ23 BUZ31 MTM13N50E P40N10 24N40 p50n05 8n50e Power MOSFET Cross Reference Guide motorola 20n50e TP50N05E IRF510 mosfet irf640 33N10E PDF

    1rf740

    Abstract: 1RF840 1rf730 IRF810 1RF640 1RFD110 IRF9613 irf9620 IRF9640 IRFI13
    Text: - 254 - f M £ tt ft X Vd s or € £ Vg s < T a = 2 5 cC Id Pd ÏI Ig s s Id s s Vg s th) % Vi>s= ft Ta=25‘ C) I d (on) D s(o n ) g fs Ciss Coss Crss (*typ) (* typ) (*typ) * /CH min Vg s m m ax Vd s (max) 1D (nA) (max) (max) (max) (pF) (pF) (pF) $1-


    OCR Scan
    1RF642 O-220AB IRF643 IRF644 IRF833 IRF840 -220AB 1rf740 1RF840 1rf730 IRF810 1RF640 1RFD110 IRF9613 irf9620 IRF9640 IRFI13 PDF

    IRF1401

    Abstract: IRF4311 IRF1501 IRF4431 IRF4411 IRF3411 IRF7431 IRF8331 IRF8411 IRF6221
    Text: C T ’ SiR conix in c o r p o r a te d Industry Standard Commercial MOSFETs Part Number V BR^DSS Id (A rDS(ON) (A) Package Part Number V(BR^[)SS Id (A) rDS(ON) (A) Package IRF1301 100 14 0.18 TO-2G4 IRF432’ 500 4.0 2.0 T0-204 IRF1311 60 14 0.18 T0-204


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    IRF1301 IRF1311 IRF1321 IRF1331 IRF1401 1RF1411 IRF1421 IRF1431 IRF1501 IRF1511 IRF4311 IRF4431 IRF4411 IRF3411 IRF7431 IRF8331 IRF8411 IRF6221 PDF

    IRF9612

    Abstract: IRF9540 IRF9541 IRF9613 IRF9620 IRF9621 IRF9622
    Text: - 25 6 - m a tt f m ± t Vg s t Vd s or Vdg % V (V) « n Æ fê (T a= 25 ^) I gss Pd Id * /CH * /CH (A) (W) Vg s t h ) I dss min Vd s (V) max Id (nA) Í# % FD s (o n ) Vd s = Vg s te (T a= 2 5 t) b(Q n) C iss g fs C oss Crss ft JE m m Vg s =0 ( m ax ) * t y p Vg s


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    IRF9540 O-220AB IRF9541 O-204AA IRFAE42 IRFAE50 IRFAE52 IRF9612 IRF9613 IRF9620 IRF9621 IRF9622 PDF

    IRF 850 mosfet

    Abstract: MOSFET IRF 635 MOSFET IRF 630 MOSFET IRF 713 IRF N-Channel Power MOSFETs IRF 740 N IRF 840 MOSFET IRF 450 MOSFET P Channel Power MOSFET IRF irf 540 mosfet
    Text: FUNCTION GUIDE POWER MOSFETs N-CHANNEL MOSFET TO-220 Vos Id 50 60 80 100 120 150 180 200 2 2.5 350 IRF IRF 713 712 IRF IRF IRF 711 710 1.3 1.5 250 400 450 500 550 600 700 800 850 900 IRF IRF IRF IRF IRF SS P SSP 613 612 614 823 822 2N85 2N90 IRF IRF IRF IRF


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    O-220 IR9523 IRF9522 IRF9513 IRF9511 IRF9512 IRF9510 IRF9623 IRF9621 IRF9622 IRF 850 mosfet MOSFET IRF 635 MOSFET IRF 630 MOSFET IRF 713 IRF N-Channel Power MOSFETs IRF 740 N IRF 840 MOSFET IRF 450 MOSFET P Channel Power MOSFET IRF irf 540 mosfet PDF