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    IRFD310 Search Results

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    IRFD310 Price and Stock

    Rochester Electronics LLC IRFD310

    0.4A 400V 3.600 OHM N-CHANNEL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRFD310 Bulk 3,189 243
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    • 1000 $1.24
    • 10000 $1.24
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    Vishay Siliconix IRFD310PBF

    MOSFET N-CH 400V 350MA 4DIP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRFD310PBF Bulk 2,112 1
    • 1 $2.17
    • 10 $1.389
    • 100 $2.17
    • 1000 $0.68962
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    Vishay Siliconix IRFD310

    MOSFET N-CH 400V 350MA 4DIP
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    DigiKey IRFD310 Tube 2,500
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    Vishay Intertechnologies IRFD310PBF

    MOSFET N-CHANNEL 400V - Tape and Reel (Alt: IRFD310PBF)
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    Avnet Americas IRFD310PBF Reel 2,500
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    Verical IRFD310PBF 2,330 201
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    Arrow Electronics IRFD310PBF 2,330 18 Weeks 1
    • 1 $0.0267
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    EBV Elektronik IRFD310PBF 13 Weeks 100
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    Vishay Semiconductors IRFD310PBF

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com IRFD310PBF 1,222
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    Find more IRFD310 price and stock on Findchips.com

    IRFD310 Datasheets (19)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRFD310 Harris Semiconductor Power MOSFET Selection Guide Original PDF
    IRFD310 International Rectifier HEXFET Power Mosfet Original PDF
    IRFD310 International Rectifier HEXFET Power Mosfet Original PDF
    IRFD310 Intersil 0.4A, 400V, 3.600 ?, N-Channel Power MOSFET Original PDF
    IRFD310 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRFD310 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 400V 350MA 4-DIP Original PDF
    IRFD310 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    IRFD310 International Rectifier Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Field Effect, N-Channel, Power, 400V, .42A, Pkg Style HEXDIP Scan PDF
    IRFD310 International Rectifier N-Channel Power MOSFETs Scan PDF
    IRFD310 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    IRFD310 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    IRFD310 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    IRFD310 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRFD310 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRFD310PBF International Rectifier HEXFET Power MOSFET Original PDF
    IRFD310PBF Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 400V 350MA 4-DIP Original PDF
    IRFD310R Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    IRFD310R International Rectifier Rugged Series Power MOSFETs - N-Channel Scan PDF
    IRFD310R Unknown Shortform Datasheet & Cross References Data Short Form PDF

    IRFD310 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRFD310

    Abstract: No abstract text available
    Text: PD -9.1225 IRFD310 HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable Fast Switching Ease of paralleling Simple Drive Requirements VDSS = 400V RDS on = 3.6Ω ID = 0.35A Description Third Generation HEXFETs from International Rectifier provide the designer


    Original     		PDF IRFD310 RFD310 IRFD310

    Untitled

    Abstract: No abstract text available
    Text: IRFD310 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)400 V(BR)GSS (V)20 I(D) Max. (A)400m# I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)1.6# @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)1.0# Minimum Operating Temp (øC)-55õ


    Original     		PDF IRFD310

    Untitled

    Abstract: No abstract text available
    Text: IRFD310, SiHFD310 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS V 400 RDS(on) () • Repetitive Avalanche Rated VGS = 10 V 3.6 Qg (Max.) (nC) 17 Qgs (nC) 3.4 Qgd (nC) 8.5 Configuration • For Automatic Insertion


    Original     		PDF IRFD310, SiHFD310 2002/95/EC 11-Mar-11

    IRFD310

    Abstract: SiHFD310
    Text: IRFD310, SiHFD310 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 400 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 3.6 • For Automatic Insertion Qg (Max.) (nC) 17 Qgs (nC) 3.4 • End Stackable 8.5 • Fast Switching


    Original     		PDF IRFD310, SiHFD310 18-Jul-08 IRFD310

    IRFD120

    Abstract: No abstract text available
    Text: PD- 95932 IRFD310PbF • Lead-Free 10/28/04 Document Number: 91133 www.vishay.com 1 IRFD310PbF Document Number: 91133 www.vishay.com 2 IRFD310PbF Document Number: 91133 www.vishay.com 3 IRFD310PbF Document Number: 91133 www.vishay.com 4 IRFD310PbF Document Number: 91133


    Original     		PDF IRFD310PbF IRFD120 IRFD120

    Untitled

    Abstract: No abstract text available
    Text: PD -9.1225 IRFD310 HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable Fast Switching Ease of paralleling Simple Drive Requirements VDSS = 400V RDS on = 3.6Ω ID = 0.35A Description Third Generation HEXFETs from International Rectifier provide the designer


    Original     		PDF IRFD310 08-Mar-07

    Untitled

    Abstract: No abstract text available
    Text: IRFD310, SiHFD310 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS V 400 RDS(on) () • Repetitive Avalanche Rated VGS = 10 V 3.6 Qg (Max.) (nC) 17 Qgs (nC) 3.4 Qgd (nC) 8.5 Configuration • For Automatic Insertion


    Original     		PDF IRFD310, SiHFD310 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    IRFD310

    Abstract: No abstract text available
    Text: PD -9.1225 IRFD310 HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable Fast Switching Ease of paralleling Simple Drive Requirements VDSS = 400V RDS on = 3.6Ω ID = 0.35A Description Third Generation HEXFETs from International Rectifier provide the designer


    Original     		PDF IRFD310 12-Mar-07 IRFD310

    92335

    Abstract: No abstract text available
    Text: IRFD310_RC, SiHFD310_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF IRFD310 SiHFD310 AN609, 25-Oct-10 7558m 7696m 0909m 92335

    SiHFD310

    Abstract: No abstract text available
    Text: IRFD310, SiHFD310 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 400 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 3.6 • For Automatic Insertion Qg (Max.) (nC) 17 Qgs (nC) 3.4 • End Stackable 8.5 • Fast Switching


    Original     		PDF IRFD310, SiHFD310 12-Mar-07

    IRFD310PBF

    Abstract: SiHFD310
    Text: IRFD310, SiHFD310 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS V 400 RDS(on) (Ω) • Repetitive Avalanche Rated VGS = 10 V 3.6 Qg (Max.) (nC) 17 Qgs (nC) 3.4 Qgd (nC) 8.5 Configuration • For Automatic Insertion COMPLIANT


    Original     		PDF IRFD310, SiHFD310 18-Jul-08 IRFD310PBF

    mosfet k 1225

    Abstract: IRFD310
    Text: Previous Datasheet Index Next Data Sheet PD -9.1225 IRFD310 HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable Fast Switching Ease of paralleling Simple Drive Requirements VDSS = 400V RDS on = 3.6Ω


    Original     		PDF IRFD310 mosfet k 1225 IRFD310

    IRFD310

    Abstract: TB334
    Text: IRFD310 Data Sheet January 2002 0.4A, 400V, 3.600 Ohm, N-Channel Power MOSFET Features • 0.4A, 400V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a


    Original     		PDF IRFD310 IRFD310 TB334

    IRFD310

    Abstract: TB334 400V to 6V DC Regulator TO 220 Package
    Text: IRFD310 Data Sheet July 1999 0.4A, 400V, 3.600 Ohm, N-Channel Power MOSFET 2324.4 Features • 0.4A, 400V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a


    Original     		PDF IRFD310 IRFD310 TB334 400V to 6V DC Regulator TO 220 Package

    Untitled

    Abstract: No abstract text available
    Text: PD- 95932 IRFD310PbF • Lead-Free 10/28/04 Document Number: 91133 www.vishay.com 1 IRFD310PbF Document Number: 91133 www.vishay.com 2 IRFD310PbF Document Number: 91133 www.vishay.com 3 IRFD310PbF Document Number: 91133 www.vishay.com 4 IRFD310PbF Document Number: 91133


    Original     		PDF IRFD310PbF IRFD120

    Untitled

    Abstract: No abstract text available
    Text: IRFD310 Data Sheet Title FD 0 bt 4A, 0V, 00 m, July 1999 0.4A, 400V, 3.600 Ohm, N-Channel Power MOSFET Features These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a


    Original     		PDF IRFD310

    Untitled

    Abstract: No abstract text available
    Text: IRFD310, SiHFD310 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS V 400 RDS(on) () • Repetitive Avalanche Rated VGS = 10 V 3.6 Qg (Max.) (nC) 17 Qgs (nC) 3.4 Qgd (nC) 8.5 Configuration • For Automatic Insertion


    Original     		PDF IRFD310, SiHFD310 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: IRFD310 Semiconductor D ata S h eet Ju ly 1999 0.4A, 400V, 3.600 Ohm, N-Channel Power MOSFET • 0.4A, 400V • r DS ON = 3 .6 0 0 i2 • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics


    OCR Scan     		PDF IRFD310 TB334 TA17444.

    TRANSISTORS 132 GD

    Abstract: No abstract text available
    Text: tyvvys S IRFD310, IRFD311, IRFD312, IRFD313 S e m ico n d ucto r y 7 0.3A and 0.4A, 350V and 400V, 3.6 and 5.0 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 0.3A and 0.4A, 350V and 400V • High Input Impedance These are N-Channel enhancement mode silicon gate


    OCR Scan     		PDF IRFD310, IRFD311, IRFD312, IRFD313 TRANSISTORS 132 GD

    IRFD311

    Abstract: FD31 IRFD310 IRFD312 IRFD313 a350v
    Text: -Standard Power MOSFETs IRFD310, IRFD311, IRFD312, IRFD313 File Number 2325 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors


    OCR Scan     		PDF IRFD310, IRFD311, IRFD312, IRFD313 IRFD313 IRFD311 FD31 IRFD310 IRFD312 a350v

    Untitled

    Abstract: No abstract text available
    Text: bitemational [g»lRectifier HEXFET Power MOSFET • • • • • • • PD -9.1225 IRFD310 Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable Fast Switching Ease of paralleling Simple Drive Requirements V d s s = 400V


    OCR Scan     		PDF IRFD310 0G224bl

    fd312

    Abstract: fd 312 s
    Text: 21 H A R R IS IRFD310/ 311/ 312/313 IRFD31OR/311R/312R/313R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Package Features 4 -P IN DIP TOP VIEW • 0.3A and 0.4A, 350V - 400V • i'DS on = 3.6H and 5 .0 0 • Single Pulse Avalanche Energy Rated*


    OCR Scan     		PDF IRFD310/ IRFD31OR/311R/312R/313R IRFD310, IRFD311, IRFD312, IRFD313 IRFD310R, IRFD311R, IRFD312R, IRFD313R fd312 fd 312 s

    IRFD313R

    Abstract: IRFD310R IRFD311R IRFD312R IRF0312
    Text: _ Rugged Power MOSFETs File N u m b er 2039 IRFD310R, IRFD311R, IRFD312R, IRFD313R Avalanche Energy Rated N-Channel Power MOSFETs 0.3A and 0.4A, 350V-400V rDs on = 3.6fi and 5.0Q N-CHANNEL ENHANCEMENT MODE Features: • ■ ■ ■


    OCR Scan     		PDF IRFD310R, IRFD311R, IRFD312R, IRFD313R 50V-400V IRFD312R IRFD313R IRFD310f IRFD310R IRFD311R IRF0312

    sot23 BS170

    Abstract: 2SK2671 P3NB60 IXFN27N80 IRFL014N STP22NE10L irf6348 IRF7305 rfp40n IXTN21N100
    Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su electronics Ten: 495 739-09-95, 644-41-29 TpaH3MCTopbi N-MOSFET (copTMpoBKa no TOKy lD) Kofl: BS107 BSS123 BS170 BSS138 BS108 BSN304 BSS89 IRFD310 IRFD420 IRFD210 IRFD320 2N7002 IRFD220 IRFL210 IRFD110 IRLD110 IRFD120


    OCR Scan     		PDF BS107 BSS123 BS170 BSS138 BS108 BSN304 BSS89 IRFD310 IRFD420 IRFD210 sot23 BS170 2SK2671 P3NB60 IXFN27N80 IRFL014N STP22NE10L irf6348 IRF7305 rfp40n IXTN21N100