IRFP250 application
Abstract: irfp250 application note datasheet irfp250 mosfet IRFP250 irfp250 applications TA9295 TB334
Text: IRFP250 Data Sheet January 2002 33A, 200V, 0.085 Ohm, N-Channel Power MOSFET Features • 33A, 200V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of
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IRFP250
TA9295.
IRFP250 application
irfp250 application note
datasheet irfp250 mosfet
IRFP250
irfp250 applications
TA9295
TB334
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transistor IRFP250
Abstract: No abstract text available
Text: IRFP250 Data Sheet Title FP2 bt A, 0V, 85 m, 33A, 200V, 0.085 Ohm, N-Channel Power MOSFET Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of
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IRFP250
TB334
transistor IRFP250
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Untitled
Abstract: No abstract text available
Text: IRFP250, SiHFP250 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 200 RDS(on) (Ω) VGS = 10 V 0.085 Qg (Max.) (nC) 140 Qgs (nC) 28 Qgd (nC) 74 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole
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IRFP250,
SiHFP250
2002/95/EC
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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IRFP250 application
Abstract: No abstract text available
Text: IRFP250, SiHFP250 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 200 RDS(on) (Ω) VGS = 10 V 0.085 Qg (Max.) (nC) 140 Qgs (nC) 28 Qgd (nC) 74 Configuration Single D S COMPLIANT Third generation Power MOSFETs from Vishay provide the
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IRFP250,
SiHFP250
2002/95/EC
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
IRFP250 application
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Untitled
Abstract: No abstract text available
Text: IRFP250, SiHFP250 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 200 RDS(on) (Ω) VGS = 10 V 0.085 Qg (Max.) (nC) 140 Qgs (nC) 28 Qgd (nC) 74 Configuration Single D S COMPLIANT Third generation Power MOSFETs from Vishay provide the
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Original
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IRFP250,
SiHFP250
2002/95/EC
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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irfp250 application note
Abstract: irfp250 DRIVER
Text: IRFP250, SiHFP250 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 200 RDS(on) (Ω) VGS = 10 V 0.085 Qg (Max.) (nC) 140 Qgs (nC) 28 Qgd (nC) 74 Configuration Single D S COMPLIANT Third generation Power MOSFETs from Vishay provide the
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IRFP250,
SiHFP250
2002/95/EC
O-220AB
11-Mar-11
irfp250 application note
irfp250 DRIVER
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PDF
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Untitled
Abstract: No abstract text available
Text: IRFP250, SiHFP250 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 200 RDS(on) (Ω) VGS = 10 V 0.085 Qg (Max.) (nC) 140 Qgs (nC) 28 Qgd (nC) 74 Configuration Single D S COMPLIANT Third generation Power MOSFETs from Vishay provide the
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IRFP250,
SiHFP250
O-220AB
O-247AC
O-218
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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PDF
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HFA105NH60
Abstract: IRFP250
Text: Previous Datasheet Index Next Data Sheet PD-2.444 HFA105NH60 TM HEXFRED Ultrafast, Soft Recovery Diode LUG TERMINAL ANODE Features • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters VR = 600V VF = 1.5V a d Qrr * = 1200nC
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HFA105NH60
1200nC
HFA105NH60
IRFP250
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HFA105NH60R
Abstract: IRFP250
Text: Previous Datasheet Index Next Data Sheet PD-2.443 HFA105NH60R TM HEXFRED Ultrafast, Soft Recovery Diode LUG TERMINAL CATHODE Features • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters VR = 600V VF = 1.5V a d
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HFA105NH60R
1200nC
IRFP250
HFA105NH60R
IRFP250
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HFA320NJ40C
Abstract: IRFP250
Text: Previous Datasheet Index Next Data Sheet Preliminary Data Sheet PD -2.449 HFA320NJ40C HEXFRED TM Ultrafast, Soft Recovery Diode LUG TERMINAL ANODE 1 Features LUG TERMINAL ANODE 2 VR = 400V • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters
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HFA320NJ40C
2600nC
HFA320NJ40C
IRFP250
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HFA100MD60C
Abstract: IRFP250 Diode 302
Text: Previous Datasheet Index Next Data Sheet PD-2.442 HFA100MD60C TM HEXFRED Ultrafast, Soft Recovery Diode Features • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters VR = 600V LUG LUG LUG TERMINAL TERMINAL TERMINAL
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HFA100MD60C
780nC
HFA100MD60C
IRFP250
Diode 302
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VISHAY DiodE 400
Abstract: No abstract text available
Text: VSUD400CW60 Vishay High Power Products FRED PtTM Ultrafast Soft Recovery Diode, 400 A FEATURES • Ultrafast recovery Lug terminal anode 2 Lug terminal anode 1 • Lead Pb -free RoHS • Designed for industrial level COMPLIANT BENEFITS • Reduced RFI and EMI
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VSUD400CW60
O-244
11-Mar-11
VISHAY DiodE 400
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Untitled
Abstract: No abstract text available
Text: VSUD400CW60 Vishay High Power Products FRED PtTM Ultrafast Soft Recovery Diode, 400 A FEATURES • Ultrafast recovery Lug terminal anode 2 Lug terminal anode 1 • Lead Pb -free RoHS • Designed for industrial level COMPLIANT BENEFITS • Reduced RFI and EMI
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VSUD400CW60
O-244
11-Mar-11
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80EBU02
Abstract: IRFP250
Text: 80EBU02 Vishay High Power Products Ultrafast Soft Recovery Diode, 80 A FRED PtTM FEATURES • Ultrafast recovery • 175 °C operating junction temperature • Screw mounting only • Lead Pb -free plating Cathode • Designed and qualified for industrial level
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80EBU02
2002/95/EC
11-Mar-11
80EBU02
IRFP250
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Untitled
Abstract: No abstract text available
Text: VSUD400CW60 Vishay High Power Products FRED PtTM Ultrafast Soft Recovery Diode, 400 A FEATURES • Ultrafast recovery Lug terminal anode 2 Lug terminal anode 1 • Lead Pb -free RoHS • Designed for industrial level COMPLIANT BENEFITS • Reduced RFI and EMI
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VSUD400CW60
O-244
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: VSUD360CW40 Vishay Semiconductors FRED Pt Ultrafast Soft Recovery Diode Module, 360 A FEATURES • Very low Qrr and trr • Compliant to RoHS directive 2002/95/EC • Designed and qualified for industrial level BENEFITS • Reduced RFI and EMI • Higher frequency operation
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VSUD360CW40
2002/95/EC
O-244
11-Mar-11
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93002
Abstract: 150EBU02 IRFP250
Text: 150EBU02 Vishay High Power Products Ultrafast Soft Recovery Diode, 150 A FRED PtTM FEATURES • Ultrafast recovery • 175 °C operating junction temperature • Screw mounting only • Lead Pb -free plating Cathode Anode • Designed and qualified for industrial level
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150EBU02
2002/95/EC
11-Mar-11
93002
150EBU02
IRFP250
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PDF
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zero crossing
Abstract: No abstract text available
Text: HFA120FA120P Vishay Semiconductors HEXFRED Ultrafast Soft Recovery Diode, 120 A FEATURES • Fast recovery time characteristic • Electrically isolated base plate • Large creepage distance between terminal • Simplified mechanical designs, rapid assembly
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HFA120FA120P
E78996
OT-227
2002/95/EC
HFA120FA120P)
OT-227
11-Mar-11
zero crossing
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Diode 200 A
Abstract: No abstract text available
Text: HFA200FA120P Vishay Semiconductors HEXFRED Ultrafast Soft Recovery Diode, 200 A FEATURES • Fast recovery time characteristic • Electrically isolated base plate • Large creepage distance between terminal • Simplified mechanical designs, rapid assembly
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HFA200FA120P
E78996
OT-227
2002/95/EC
HFA200FA120P)
OT-227
11-Mar-11
Diode 200 A
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IRFP250
Abstract: MUR1620CT mur1620
Text: MUR1620CTPbF Vishay High Power Products Ultrafast Rectifier, 2 x 8 A FRED PtTM FEATURES • Ultrafast recovery time Base 2 common cathode Pb-free • Low forward voltage drop Available • Low leakage current RoHS* • 175 °C operating junction temperature
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MUR1620CTPbF
O-220AB
11-Mar-11
IRFP250
MUR1620CT
mur1620
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IRFP250
Abstract: No abstract text available
Text: HFA180NH40PbF Vishay High Power Products HEXFRED Ultrafast Soft Recovery Diode, 180 A FEATURES • Very low Qrr and trr • Lead Pb -free • Designed and qualified for industrial level Lug terminal anode RoHS COMPLIANT BENEFITS • Reduced RFI and EMI
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HFA180NH40PbF
11-Mar-11
IRFP250
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C160150
Abstract: No abstract text available
Text: VS-15ETH03SPbF, VS-15ETH03-1PbF Vishay High Power Products Hyperfast Rectifier, 15 A FRED Pt VS-15ETH03SPbF FEATURES VS-15ETH03-1PbF • Hyperfast recovery time • Low forward voltage drop • Low leakage current • 175 °C operating junction temperature
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VS-15ETH03SPbF,
VS-15ETH03-1PbF
VS-15ETH03SPbF
J-STD-020,
2002/95/EC
AEC-Q101
O-262
11-Mar-11
C160150
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Untitled
Abstract: No abstract text available
Text: HFA90NH40PbF Vishay High Power Products HEXFRED Ultrafast Soft Recovery Diode, 210 A FEATURES • Very low Qrr and trr • Lead Pb -free • Designed and qualified for industrial level Lug terminal anode RoHS COMPLIANT BENEFITS • Reduced RFI and EMI • Reduced snubbing
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HFA90NH40PbF
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: 8ETU04PbF Vishay High Power Products Ultrafast Rectifier, 8 A FRED PtTM FEATURES • Ultrafast recovery time Base cathode • Low forward voltage drop • Low leakage current 2 • 175 °C operating junction temperature • Lead Pb -free (“PbF” data sheet)
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8ETU04PbF
O-220AC
11-Mar-11
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