Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TA9295 Search Results

    TA9295 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRFP250 application

    Abstract: irfp250 application note datasheet irfp250 mosfet IRFP250 irfp250 applications TA9295 TB334
    Text: IRFP250 Data Sheet January 2002 33A, 200V, 0.085 Ohm, N-Channel Power MOSFET Features • 33A, 200V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    Original
    PDF IRFP250 TA9295. IRFP250 application irfp250 application note datasheet irfp250 mosfet IRFP250 irfp250 applications TA9295 TB334

    TA9295

    Abstract: irfp250 applications IRFP250 TB334 transistor IRFP250
    Text: IRFP250 Data Sheet July 1999 33A, 200V, 0.085 Ohm, N-Channel Power MOSFET Ordering Information PART NUMBER IRFP250 • 33A, 200V • rDS ON = 0.085Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds


    Original
    PDF IRFP250 TB334 O-247 TA9295 irfp250 applications IRFP250 TB334 transistor IRFP250

    transistor IRFP250

    Abstract: No abstract text available
    Text: IRFP250 Data Sheet Title FP2 bt A, 0V, 85 m, 33A, 200V, 0.085 Ohm, N-Channel Power MOSFET Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    Original
    PDF IRFP250 TB334 transistor IRFP250

    65e9 transistor

    Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
    Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12


    Original
    PDF 1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 65e9 transistor transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note

    Irfp250

    Abstract: irfp250 mosfet irfp252
    Text: IRFP250, IRFP251, IRFP252, IRFP253 S E M I C O N D U C T O R 27A and 33A, 150V and 200V, 0.085 and 0.12 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 27A and 33A, 150V and 200V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    Original
    PDF IRFP250, IRFP251, IRFP252, IRFP253 TA9295. Irfp250 irfp250 mosfet irfp252

    RFK25N18

    Abstract: RFK25N20 TI58 rca application notes
    Text: Standard Power MOSFETs RFK25N18, RFK25N20 File Number N-Channel Enhancement-Mode Power Field-Effect Transistors 1500 25 A, 180 V - 2 0 0 V ros on = 0.15 Q Features: • SOA is power-dissipation limited ■ Nanosecond switching speeds m Linear transfer characteristics


    OCR Scan
    PDF RFK25N18, RFK25N20 RFK25N18 RFK25N20* 2CS-37M3 37i6s AN-7254 AN-7260. j7i64 2CS-37166 TI58 rca application notes

    Untitled

    Abstract: No abstract text available
    Text: H a r r IRFP250, IRFP251, IRFP252, IRFP253 i s s e m i c o n d u c t o r 27 A and 33A, 150V and 200V, 0.085 and 0.12 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 27A and 33A, 150V and 200V • High Input Impedance These are N-Channel enhancement mode silicon gate


    OCR Scan
    PDF IRFP250, IRFP251, IRFP252, IRFP253 gatFP250, RFP252, RFP253

    Untitled

    Abstract: No abstract text available
    Text: IRFP250 Semiconductor Data Sheet July 1999 33A, 200V, 0.085 Ohm, N-Channel Power MOSFET • 33A, 200V Ordering Information • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics


    OCR Scan
    PDF IRFP250 O-247 085i2 TB334 TA9295.

    IRFP250

    Abstract: No abstract text available
    Text: H a IRFP250, IRFP251, IRFP252, IRFP253 r r i s ” “ I CONDUCTOE 27A and 33A, 150V and 200V, 0.085 and 0.12 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 27A and 33A, 150 V and 200V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    OCR Scan
    PDF IRFP250, IRFP251, IRFP252, IRFP253 TA929252, RFP252, IRFP250

    RFH25N18

    Abstract: RFH25N20
    Text: G E SOLID STATE dËJ ~ai -_^8Z 50 '* G E S O L I D S T A T E 3075001 0 1E O Q iaiflS 3 18185 Standard Power MOSFETs_ RFH25N18, RFH25N20 File N u m b e r 1631 Power MQS Field-Effect Transistors TERM INAL DIAGRAM N-Channel Enhancement-Mode Power Field-Effect Transistors


    OCR Scan
    PDF 3875081G RFH25N18, RFH25N20 2CS-5J74I RFH25N18 RFH25N20* 98CS-37IS4 92CS-57I65 RFH25N20