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    Rochester Electronics LLC IRFR121

    N-CHANNEL POWER MOSFET
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    Rochester Electronics LLC IRFR1219A

    N-CHANNEL POWER MOSFET
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    Harris Semiconductor IRFR121

    8.4A, 80V, 0.27ohm, N-Channel, POWER MOSFET '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics IRFR121 2,880 1
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    Harris Semiconductor IRFR1219A

    8.4A, 80V, 0.27ohm, N-Channel, POWER MOSFET '
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    Rochester Electronics IRFR1219A 2,500 1
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    • 1000 $0.3223
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    IRFR121 Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRFR121 Harris Semiconductor Power MOSFET Product Matrix Original PDF
    IRFR121 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRFR121 International Rectifier HEXFET Power MOSFETs Scan PDF
    IRFR121 International Rectifier Surface Mount HEXFETs Scan PDF
    IRFR121 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRFR121 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    IRFR121 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    IRFR121 Unknown FET Data Book Scan PDF
    IRFR1219A Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    IRFR121 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: IRFR121 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)80 V(BR)GSS (V)20 I(D) Max. (A)8.4# I(DM) Max. (A) Pulsed I(D)5.9# @Temp (øC)100 IDM Max (@25øC Amb)34# @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)50# Minimum Operating Temp (øC)-55õ


    Original     		PDF IRFR121

    std2n52

    Abstract: stp2na60 buz102 equivalent SSH6N80 rfp60n06 replacement for IRL2203N BUZ91 equivalent RFP60N06LE IRFP460 cross reference buz91a equivalent
    Text: POWER MOSFETS CROSS REFERENCE Industry standard 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 2SK1159 2SK1160 2SK1161 2SK1164 2SK1166 2SK1167 2SK1168 2SK1169 2SK1170 2SK1199 2SK1202 2SK1203 2SK1204 2SK1205 2SK1231 2SK1232


    Original     		PDF 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 std2n52 stp2na60 buz102 equivalent SSH6N80 rfp60n06 replacement for IRL2203N BUZ91 equivalent RFP60N06LE IRFP460 cross reference buz91a equivalent

    YTA630

    Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
    Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509


    Original     		PDF 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620

    BUZ90af

    Abstract: hv82 MGF4919G-01 MGF4919G MGF2407A-01 BUZ80AF1 6n60 MGF1302-15 SSP 50N06 2n10l
    Text: МИКРОСХЕМЫ 1 ПОЛЕВЫЕ ТРАНЗИСТОРЫ ИМПОРТНЫЕ Наименование 2SJ 103 2SJ 200 2SJ 306 2SJ 307 2SJ 449 2SJ 79 2SK 1023 2SK 1058 2SK 1060 2SK 107 2SK 1082 2SK 1102 2SK 1117 2SK 1118 2SK 1120 2SK 1162 2SK 118 2SK 1198


    Original     		PDF O-251AA O-247AC O-220AB PowerSO-20 BUZ90af hv82 MGF4919G-01 MGF4919G MGF2407A-01 BUZ80AF1 6n60 MGF1302-15 SSP 50N06 2n10l

    irfb220

    Abstract: TO-251AA 251AA 251C IRFR020 IRFR120 IRFR121 IRFR210 IRFR212 T0-251
    Text: - 1 f « ± £ *£ Ta=25tC SI € tt € Id Pd r Vds Vgs or * /CH * /CH * Vdg ft 1RFPG50 1RFPG52 IRFRG10 IRFR012 IRFR020 IRFR032 IRFR110 IRFR111 IRFR120 IRFR121 IRFR210 IRFR212 IRFR220 IRFR222 IRFR9010 IRFR9012 1R F R 9 0 2 0 1R F R 9 0 2 2 IRFR9110 IRFR9111


    OCR Scan     		PDF 1HFPG50 O-247AC T0-247AC O-251AA IRFR9222 O-243AA IRFU010 irfb220 TO-251AA 251AA 251C IRFR020 IRFR120 IRFR121 IRFR210 IRFR212 T0-251

    k 3525 MOSFET

    Abstract: No abstract text available
    Text: HE D I Data Sheet No. PD-9.523B MâssMsa QOüôaaM g I INTERNATIONAL T-35-25 RECTIFIER INTERNATIONAL RECTIFIER P O O R I REPETITIVE AVALANCHE AND dv/dt RATED 175°C OPERATING TEMPERATURE HEXFET TRANSISTORS IRFR120 IRFR121 IRFU1SO IRFU121 N-CHANNEL Product Summary


    OCR Scan     		PDF T-35-25 IRFR120 IRFR121 IRFU121 IRFU12Ã IRFR120) IRFU120) k 3525 MOSFET

    Untitled

    Abstract: No abstract text available
    Text: MOSFETs FUNCTION GUIDE D -PA K N -C H A N N EL Part Number BVdss V lo(on)(A) IRFR010 IRFR020 50 8.20 15.00 0.200 0.100 IRFR014 SSR3055 IRFR024 60 8.20 12.00 15.00 IRFR111 IRFR121 .30 IRFR110 IRFR120 PofWatt) Page 5.00 3.00 25 42 63 73 0.200 0,150 0.100 5.00


    OCR Scan     		PDF IRFR010 IRFR020 IRFR014 SSR3055 IRFR024 IRFR111 IRFR121 IRFR110 IRFR120 IRFR211

    irc832

    Abstract: No abstract text available
    Text: H EXFET Power MOSFETs International S Rectifier H EXSense Current Sensing N-Channel Part Number IRCZ24 IRCZ34 IRCZ44 IRC531 IRC530 IRC540 Vqs Drain Source Voltage Volts RDS(on) On-State Resistance (Ohms) ID Continuous Drain Current 2S°C Casa (Amps) >DM Pu'*


    OCR Scan     		PDF IRCZ24 IRCZ34 IRCZ44 IRC531 IRC530 IRC540 IRC630 IRC640 IRC634 IRC644 irc832

    RF1S42N03L

    Abstract: No abstract text available
    Text: HARRI S DI S CRE TE P O W E R MOS F E T LINE T O - 2 5 2 PACKAGE STANDARD GATE DEVICES V dss V r DS(ON) 1 (A ) T O -2 5 2 A A CHANNEL 20V 0.0250 20A RFD20N02SM N 50V 0.3000 8A RFD8P05SM P 0.0470 16A RFD16N05SM N 0.100Q 14A RFD14N05SM N 0.1500 15A RFD15P05SM


    OCR Scan     		PDF RFD20N02SM RFD8P05SM RFD16N05SM RFD14N05SM RFD15P05SM RFD16N06SM RFD14N06SM RFD15P06SM RFD8P06ESM RFD3055SM RF1S42N03L

    Untitled

    Abstract: No abstract text available
    Text: IRFR120/121 IRFU120/121 N-CHANNEL POWER MOSFETS FEATURES • • • • • • • Lower Ros ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability


    OCR Scan     		PDF IRFR120/121 IRFU120/121 120/U IRFR121/U121

    IRFR012

    Abstract: IRFR411
    Text: FUNCTION GUIDE POWER MOSFETs D-PAK N-CHANNEL BVdss V ID(onXA) RDS(onX0) 50.00 6.70 8.20 8.20 14.00 15.00 15.00 0.300 0.300 0.200 0.120 0.120 0.100 IRFR012 IRLR010 IRFR010 IRFR022 IRLR020 IRFR020 60.00 6.70 8.20 8.20 14.00 15.00 15.00 0.300 0.200 0.300 0.120


    OCR Scan     		PDF IRFR012 IRLR010 IRFR010 IRFR022 IRLR020 IRFR020 IRFR015 IRFR014 IRLR014 IRFR025 IRFR411

    Untitled

    Abstract: No abstract text available
    Text: HARRIS s e m ic o n d u c to r IR F R 1 2 0 , IR F R 1 2 1 , IR F U 1 2 0 , IR F U 1 2 1 8.4A, 80V AND 100V, 0.27 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 8.4A, 80V and 100V • High Input Impedance These are N-Channel enhancement mode silicon gate


    OCR Scan     		PDF typesRFU121 IRFR120, RFR121, IRFU120, RFU121

    IFU120

    Abstract: fu120 IFU-121 fr120 irfu121 Harris IRFR120 IRFU N-Channel Power MOSFETs a 4556
    Text: m HARRIS IR FR 120/1R F R 121 IR F U 1 2 0 /IR F U 1 2 1 N-Channel Power MOSFETs Avalanche-Energy-Rated August 1991 Packages Features T 0 -2 S 1 A A TOP VIEW • 8.4A, 80V and 100V • rDS on = 0 .2 7 0 3 SOURCE • Single Pulse Avalanche Energy Rated DRAIN


    OCR Scan     		PDF 120/1R O-252AA IRFR120, IRFR121, IRFU120, IRFU121 IFU120 fu120 IFU-121 fr120 Harris IRFR120 IRFU N-Channel Power MOSFETs a 4556

    4311 mosfet transistor

    Abstract: D 4206 TRANSISTOR transistor D 322 Power MOSFETs D 843 Transistor Transistor irf230 h a 431 transistor MOSFET IRF460 n-channel 4336 742r
    Text: - POWER MOSFETs 4 N-CHANNEL POWER MOSFETs PAGE 2N6755, 2N6756 N-Channel Enhancement-Mode Power Field-Effect Transistors. 2N6757, 2N6758 N-Channel Enhancement-Mode Power Field-Effect Transistors. 4-11 2N6759, 2N6760


    OCR Scan     		PDF 2N6755, 2N6756 2N6757, 2N6758 2N6759, 2N6760 2N6761, 2N6762 2N6763, 2N6764 4311 mosfet transistor D 4206 TRANSISTOR transistor D 322 Power MOSFETs D 843 Transistor Transistor irf230 h a 431 transistor MOSFET IRF460 n-channel 4336 742r

    MTM13N50E

    Abstract: P40N10 24N40 p50n05 8n50e Power MOSFET Cross Reference Guide motorola 20n50e TP50N05E IRF510 mosfet irf640 33N10E
    Text: ir tmos Cross-Reference The follow ing table represents a cro ss-re fe re n ce guide for all T M O S P ow er M O SFETs w hich are m an ufacture d directly by M otorola. W here the M otorola part nu m be r differs from the Industry part num ber, the M otorola de vice is a “form , fit and fu n ctio n ”


    OCR Scan     		PDF BUZ10 BUZ11 BUZ11A BUZ11S2 BUZ15 BUZ171 BUZ20 BUZ21 BUZ23 BUZ31 MTM13N50E P40N10 24N40 p50n05 8n50e Power MOSFET Cross Reference Guide motorola 20n50e TP50N05E IRF510 mosfet irf640 33N10E

    IRFP9640

    Abstract: 1RFR320 IRFP9610 IRFP9640 SAMSUNG IRFR120 IRFP9630 IRFP9622 D-PAK IRFP9621 IRFP9631
    Text: - 302 - §y =s tt f m t Vd s or « A £ Vg s Vd g % V (V) fë (Ta=25tO ) Id it Ig s s Pd * /CH * /CH (A) m V g s th) loss (nA) Vg s (V) < m A) Vd s (V) min max (V) (V) % fà 1D (nA) tä (Ta=25cC ) lö(on) Ds(on) Vd s = Vg s Ciss g fs Coss B Crss V g s =0


    OCR Scan     		PDF 1RFP9620 O-220 IRFP9621 IRFP9622 IRFR120 IRFR121 IRFR210 IRFR212 IRFR220 IRFR222 IRFP9640 1RFR320 IRFP9610 IRFP9640 SAMSUNG IRFP9630 D-PAK IRFP9631

    IRFP9640

    Abstract: IRFP9610 IRFS1Z3 irfb220 IRFS1Z0 IRFP9630 251C IRFR020 IRFR120 IRFR121
    Text: - SI € tt f « r Vd s or € ± * Vd g ft V £ Vg s (V) 1 *£ (Ta=25tC ) Ig s s Pd Id * /CH * /CH (A) (W) V g s th) Id s s (nA) Vg s (V) ( M A) Vd s (V) min max (V) (V) n ft '14 Ciss 9 fs Coss Crss ft B ffi % V g s =0 (max) *typ V g s (V) (0) Id (A) *typ


    OCR Scan     		PDF 1HFPG50 O-247AC T0-247AC IRFR120 IRFR121 IRFR210 IRFR212 IRFR220 IRFR222 IRFR310 IRFP9640 IRFP9610 IRFS1Z3 irfb220 IRFS1Z0 IRFP9630 251C IRFR020

    sot89 footprint

    Abstract: INTERNATIONAL RECTIFIER 9516 9524 IRFR20 IRFS1Z0 T0252AA 9519 9520
    Text: SURFACE MOUNT HEXFETs INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER lIO R l *4Ö S S 4 S 2 2bE D QG1DSS2 ~T~3c -03 Ô • Surface Mount Packages N-CHANNEL Types Vos Q max) V Iq cont Tq - 25°C 'DM pulsed PD max A A W r 0S(0N) Bulletin IRFS1Z3 60 3.20 0.75


    OCR Scan     		PDF IRFR024 IRFR014 IRFR121 IRFR111 IRFR120 IRFR110 IRFR20 IRFR222 IRFR210 IRFR212 sot89 footprint INTERNATIONAL RECTIFIER 9516 9524 IRFS1Z0 T0252AA 9519 9520

    IRFS1Z3

    Abstract: IRFR121 IRFR014 IRFR024 IRFR110 IRFR111 IRFR120 IRFR210 IRFR212 IRFR220
    Text: SURFACE MOUNTED DEVICES INTERNATIONAL RECTIFIER ICR O ' CONTENTS E- Page p- APPLICATION DETAILS DIODES — SCHGTTKY — STANDARD RECOVERY — ULTRA FAST RECOVERY ENCAPSULATED BRIDGES FOOTPRINT AND PAD DIMENSIONS HEXFETs MILITARY CAPABILITY OUTLINES TAPE REEL INFORMATION


    OCR Scan     		PDF t0-243AA is0t-89i IRFR024 IRFR014 T0-252AA IRFR121 IRFR111 524R214 IRFR320 IRFR310 IRFS1Z3 IRFR110 IRFR120 IRFR210 IRFR212 IRFR220

    IRC540

    Abstract: irfs1z0 IRCB40 irfs1z3 irFR9024 HEXFET IRCZ34 IRC832 IRC840 *FR9110 THOMSON 58E
    Text: THOMSON/ DISTRIBUTOR 5ÖE TCSK D HEXFET Power MOSFETs International S»] Rectifier HEXSense Current Sensing N-Channel Part Number Vq s Drain Source Voltage Volts IRCZ24 IRCZ34 IRCZ44 IRC531 IRC530 IRC540 IRC630 IRC640 IRC634 IRC644 IRC730 IRC740 IRC832 IRC830


    OCR Scan     		PDF T02tia73 IRCZ24 IRCZ34 IRCZ44 IRC531 IRC530 IRC540 IRC630 IRC640 IRC634 IRC540 irfs1z0 IRCB40 irfs1z3 irFR9024 HEXFET IRCZ34 IRC832 IRC840 *FR9110 THOMSON 58E

    IRFS1Z0

    Abstract: IRFS1Z3 irfb220 irfu310 251C IRFR020 IRFR120 IRFR121 IRFR210 IRFR212
    Text: - SI € tt f « ± r Vd s £ Vgs *£ 1 T a = 2 5 tC Ig s s Pd Id Id s s Vg s th) or € n ft ft f Ds(on) Vd s = '14 lD(on) Ciss 9 fs Coss Crss * Vd g (V) (V) * /CH * /CH (A) (W) (nA) Vg s (V) ( M A) Vd s (V) min max (V) (V) (max) Id (mA) ft B ffi % Vg s =0


    OCR Scan     		PDF 1HFPG50 O-247AC T0-247AC RFU310 1RFU32Ã 1RFU411 IRFU420 IRFU901Ã IRFU9012 IRFU9020 IRFS1Z0 IRFS1Z3 irfb220 irfu310 251C IRFR020 IRFR120 IRFR121 IRFR210 IRFR212

    IRF740 "direct replacement"

    Abstract: irf9640 REPLACEMENT GUIDE IRF9540 replacement IRF640 irf510 2Sk350 HITACHI IRF9613 rca9213a buz11 cross reference sgsp467 fu120
    Text: CROSS REFERENCE GUIDE POWER MOSFETs Inter­ national Rectifier SAMSUNG Direct Replace­ ment Inter­ national Rectifier SAMSUNG Direct Replace­ ment Inter­ national Rectifier SAMSUNG Direct Replace­ ment Inter­ national Rectifier SAMSUNG Direct Replace­


    OCR Scan     		PDF IRF510 IRF511 IRF512 IRF513 IRF520 IRF521 IRF522 IRF523 IRF610 IRF611 IRF740 "direct replacement" irf9640 REPLACEMENT GUIDE IRF9540 replacement IRF640 irf510 2Sk350 HITACHI IRF9613 rca9213a buz11 cross reference sgsp467 fu120

    IRFR120

    Abstract: IRFR121 ISE Electronics
    Text: IRFR120/121 IRFU120/121 N-CHANNEL POWER MOSFETS FEATURES • • • • • • • Lower Rds ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high tem perature reliability


    OCR Scan     		PDF IRFR120/121 IRFU120/121 20/U1 IRFR121/U121 IRFR120/U120 IRFR120 IRFR121 ISE Electronics

    FR9110

    Abstract: 1RFR9020 irfb220 IRFS1Z3 251C IRFR020 IRFR120 IRFR121 IRFR210 IRFR212
    Text: - SI € tt f « ± r Vd s £ Vgs *£ 1 T a = 2 5 tC Ig s s Pd Id Id s s Vg s th) or € n ft ft f Ds(on) Vd s = '14 lD(on) Ciss 9 fs Coss Crss * Vd g (V) (V) * /CH * /CH (A) (W) (nA) Vg s (V) ( M A) Vd s (V) min max (V) (V) (max) Id (mA) ft B ffi % Vg s =0


    OCR Scan     		PDF 1HFPG50 O-247AC T0-247AC IRFS150 O-247 IRFS151 IRFS152 IRFS153 FR9110 1RFR9020 irfb220 IRFS1Z3 251C IRFR020 IRFR120 IRFR121 IRFR210 IRFR212