Untitled
Abstract: No abstract text available
Text: PD - 91806C RADIATION HARDENED POWER MOSFET SURFCACE MOUNT LCC-18 IRHE7130 JANSR2N7261U 100V, N-CHANNEL REF: MIL-PRF-19500/601 RAD Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level IRHE7130 100K Rads (Si) IRHE3130 300K Rads (Si) IRHE4130
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91806C
LCC-18)
IRHE7130
JANSR2N7261U
MIL-PRF-19500/601
IRHE3130
IRHE4130
IRHE8130
1000K
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2N7261U
Abstract: IRHE7130 2N7261 equivalent IRHE8130 JANSH2N7261U JANSR2N7261U
Text: PD - 91806A REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR IRHE7130 IRHE8130 JANSR2N7261U JANSH2N7261U N CHANNEL 100Volt, 0.18Ω Ω , MEGA RAD HARD HEXFET International Rectifier’s RAD HARD technology HEXFETs demonstrate excellent threshold voltage
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1806A
IRHE7130
IRHE8130
JANSR2N7261U
JANSH2N7261U
100Volt,
1x106
2N7261U
IRHE7130
2N7261 equivalent
IRHE8130
JANSH2N7261U
JANSR2N7261U
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IRHE7130
Abstract: IRHE3130 IRHE4130 IRHE8130 JANSR2N7261U LCC-18
Text: PD - 91806B RADIATION HARDENED POWER MOSFET SURFCACE MOUNT LCC-18 IRHE7130 JANSR2N7261U 100V, N-CHANNEL REF: MIL-PRF-19500/601 RAD Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level R DS(on) IRHE7130 100K Rads (Si) 0.18Ω IRHE3130 300K Rads (Si)
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91806B
LCC-18)
IRHE7130
JANSR2N7261U
MIL-PRF-19500/601
IRHE3130
IRHE4130
IRHE8130
1000K
IRHE7130
IRHE3130
IRHE4130
IRHE8130
JANSR2N7261U
LCC-18
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IRHE3130
Abstract: IRHE4130 IRHE7130 IRHE8130 JANSR2N7261U LCC-18
Text: PD - 91806C RADIATION HARDENED POWER MOSFET SURFCACE MOUNT LCC-18 IRHE7130 JANSR2N7261U 100V, N-CHANNEL REF: MIL-PRF-19500/601 RAD Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level IRHE7130 100K Rads (Si) IRHE3130 300K Rads (Si) IRHE4130
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91806C
LCC-18)
IRHE7130
JANSR2N7261U
MIL-PRF-19500/601
IRHE3130
IRHE4130
IRHE8130
1000K
IRHE3130
IRHE4130
IRHE7130
IRHE8130
JANSR2N7261U
LCC-18
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IRHE713
Abstract: IRHE7130 IRHE813 IRHE8130 IRHN7054 IRHN8054
Text: Data Sheet No. PD 9.6 IRHE713 IRHE813 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N-CHANN MEGA RAD HAR 100 Volt, 0.18Ω, MEGA RAD HARD HEXFET International Rectifier’s MEGA RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total radiation
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IRHE713
IRHE813
MIL-STD-750,
MlL-STD-750,
IRHE713
IRHE7130
IRHE813
IRHE8130
IRHN7054
IRHN8054
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IRF460
Abstract: SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065
Text: Aerospace and Defense Products Short Form Catalog 2007 Welcome to the Aerospace and Defense Products Short Form Catalog. Inside is an overview of our product line including product specific information. To learn more, visit our web site at irf.com where you will find technical documents, data sheets for all products, application notes, design tips, technical papers, application-specific information,
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30am-5
44-0-1737-2com
DB8029C
IRF460
SMD TRANSISTOR MARKING k38
smd transistor k38
we 751002 s
SMD-6C
transistor smd k45
RAD-HARD igbt
IRF3504
afl2805s manufactured by international rectifier
550-065
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IRFM9034
Abstract: irh7c50se IRFM460 irhy IRFE310 international rectifier p JANSR2N7261
Text: International Rectifier Government and Space Products BVDSS Part Number Channel V RDS(on) (Ω) PD @ TC = 25°C ID @ T =100°C C (A) ID @ T =25 C (A) Total Dose Rating Rads (Si) (W) Fax-on-Demand HEXFET Power MOSFETs to view a data sheet, click on the part number
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IRHE7110
IRHE7130
IRHE7230
IRHE8110
IRHE8130
IRHE8230
IRHE9130
IRHE9230
IRHG7110
IRHG6110
IRFM9034
irh7c50se
IRFM460
irhy
IRFE310
international rectifier p
JANSR2N7261
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irf5n5210sc
Abstract: IRHNA57064SCS IRHM597260 irf5n5210 irhna597160scs irhf7110scs IRHG57110 IRHNA57264SESCS 35CLQ045SCS 12CLQ150SCS
Text: PD - 94246A IRHG567110 RADIATION HARDENED 100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET POWER MOSFET 4# TECHNOLOGY THRU-HOLE MO-036AB Product Summary Part Number IRHG567110 IRHG563110 IRHG567110 IRHG563110 Radiation Level RDS(on) 100K Rads (Si)
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4246A
IRHG567110
MO-036AB)
IRHG563110
MO-036AB
O-254AA
22JGQ045SCV
irf5n5210sc
IRHNA57064SCS
IRHM597260
irf5n5210
irhna597160scs
irhf7110scs
IRHG57110
IRHNA57264SESCS
35CLQ045SCS
12CLQ150SCS
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10RIA10
Abstract: HFA40HF120 irfm9034 10RIA100 10RIA120 10RIA20 10RIA40 10RIA60 JANSR2N7261 70HF
Text: Index International Rectifier Government and Space Products Level of Quality Part Number Rectifiers Voltage Current CECC Issue Issue Assessment and CECC V (A) Specs Number Date 50 000 Screen Level Options Fax-on-Demand CECC-Qualifed, Europe Mfg. in Italy
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DO-203AA
HFA40HF120
HFA40HF60
O-254AA
HFA35HB120
HFA35HB120C
HFA35HB60
HFA35HB60C
O-258AA
HFA45HC120C
10RIA10
HFA40HF120
irfm9034
10RIA100
10RIA120
10RIA20
10RIA40
10RIA60
JANSR2N7261
70HF
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IRHNA57064SCS
Abstract: IRHNJ597230SCS IRHNJ9130SCS IRHG6110SCS IRHY7434 IRHE57130SCS 8CLJQ045SCV IRHNJ57034SCS irfy9230 35CLQ045SCS
Text: PD - 94046B RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 IRHNJ597230 200V, P-CHANNEL 4# TECHNOLOGY c Product Summary Part Number Radiation Level IRHNJ597230 100K Rads (Si) IRHNJ593230 300K Rads (Si) RDS(on) 0.505Ω 0.505Ω ID -8.0A -8.0A SMD-0.5
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94046B
IRHNJ597230
IRHNJ593230
O-254AA
22JGQ045SCV
22GQ100SCV
25GQ045SCS
IRHNA57064SCS
IRHNJ597230SCS
IRHNJ9130SCS
IRHG6110SCS
IRHY7434
IRHE57130SCS
8CLJQ045SCV
IRHNJ57034SCS
irfy9230
35CLQ045SCS
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2N7550
Abstract: 2N7549 2n7545 2N7476T1 smd 92112 2N7546 IRHNJ9130SCS 2N7471 2N7426 2N7468
Text: Hi-Rel Products Shortform Hermetic MOSFETs High Voltage MOSFETs for PFC and Primary Switch Applications Hi-Rel Components Schottky and HEXFRED Products Hi-Rel Schottky Diodes Hi-Rel HEXFRED Diodes Hi-Rel Linear and Switching Regulators Fixed Voltage Regulators
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2N6764 JANTX
Abstract: 91447 IR2113L
Text: Government / Space Products Catalog of Available Documents Revised 5/11/99 www.irf.com IR ProCenter Fax-On-Demand 310 252-7100 Radiation-Hardened HEXFET Description Datasheets IRH7054 IRH7130 IRH7150 IRH7230 IRH7250 IRH7250SE IRHF7330SE IRHF7430SE IRH7450
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IRH7054
IRH7130
IRH7150
IRH7230
IRH7250
IRH7250SE
IRHF7330SE
IRHF7430SE
IRH7450
IRH7450SE
2N6764 JANTX
91447
IR2113L
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2n7425
Abstract: 2n7389 2N7422 2N7433 2N7389 TO39 TO-254 2N7269 2n7391 to39 2N7262
Text: MIL-PRF-19500 QPL STATUS QPL Status Hex Size 1 1 1 1 2 2 3 3 3 3 3 3 3 3 4 4 5 5 5 5 CH N N N/P P N P N N P P N N P P N P N N N N Package TO39 M0036 MO036 MO036 TO39 TO39 TO3 TO39 TO3 TO39 TO39 TO257 TO257 TO39 TO254 TO254 TO3 TO254 TO254 TO254 March 1998
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MIL-PRF-19500
M0036
MO036
2N7394
2N6782
2N7334
2N7336
2N7335
2N6788
2n7425
2n7389
2N7422
2N7433
2N7389 TO39
TO-254
2N7269
2n7391
to39
2N7262
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IRHE7110
Abstract: IRHE7130 IRHE8110 IRHE8130
Text: PD - 90732B IRHE7110 IRHE8110 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N CHANNEL MEGA HARD RAD 100Volt, 0.60Ω Ω , MEGA RAD HARD HEXFET International Rectifier’s RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total
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90732B
IRHE7110
IRHE8110
100Volt,
1x106
IRHE7110
IRHE7130
IRHE8110
IRHE8130
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2N7334
Abstract: irfg9110 H24 SMD
Text: Other Products from IR Government and Space H EX FET Power M O SFETs Radiation Hardened N - and P-Channel Part • d@ T ,= 25°C Iq@ Tq = 100*C A (A) RthJC Max. (K/W) Pd@ Tq = 25°C Number BVq ss (V) RDS(on) (Ohms) IRHE7110 100 IRHE8110 IRHE7130 IRHE8130
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IRHE7110
IRHE8110
IRHE7130
IRHE8130
IRHE7230
IRHE8230
IRHE9130
IRHN7054
IRHN8054
IRHN7130
2N7334
irfg9110
H24 SMD
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Untitled
Abstract: No abstract text available
Text: Data Sheet No. PD-9.680A INTERNATIONAL RECTIFIER IO R AVALANCHE ENERGY AND dv/dt RATED HEXFET TRANSISTORS IRHE7130 IRHE8130 N-CHANNEL MEGA RAD HARD 100 Volt, 0.18Q, MEGA RAD HARD HEXFET International Rectifier’s MEGA RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability
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OCR Scan
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IRHE7130
IRHE8130
1x10s
1x106
SS452
IRHE7130,
IRHE8130
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Untitled
Abstract: No abstract text available
Text: Data Sheet No. PD-9.680A INTERNATIONAL RECTIFIER IO R AVALANCHE ENERGY AND dv/dt RATED HEXFET TRANSISTORS IRHE7130 IRHE8130 N-CHANNEL MEGA RAD HARD 100 Volt, 0.18ft, MEGA RAD HARD HEXFET International Rectifier’s MEGA RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability
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IRHE7130
IRHE8130
1x10s
IRHE7130,
IRHE8130
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IRHE7110
Abstract: IRHE7130 IRHE7230 IRHE8110 IRHE8130 IRHE8230 IRHE9130 IRHN7054 IRHN7130 1RHF8130
Text: 4flss4s2 DQlblbb 2Û4 - From ,R HEXFET Paît Number bvdss V RDS(on) (OHMS) RAD HARD id @ Tq = 25°C •d @ Tc = 100”C RthJC Max. Pd @ Tc = 25-C (A) (A) (K/W) (W) IRHE7110 100 0.60 3.1 2.0 11 11 IRHE8110 100 0.60 3.1 2.0 11 11 22 IRHE7130 100 0.18 8.0 5.0
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4flss452
IRHE7110
IRHE8110
IRHE7130
IRHE8130
IRHE7230
IRHE8230
IRHE9130
IRHN7054
IRHN80S4
IRHN7130
1RHF8130
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IRHC7110
Abstract: IRHC7130 IRHC7150 D47 MOSFET
Text: International [^Rectifier Government/ Space Products Radiation Hard HEXFETs N-Channel Part Number Vqs Drain Source Voltage Volts Resistance (Ohms) Ip Continuous Drain Current 25°C Case (Amps) •DM Pu'*« Drain Current (Amps) IRHN7150 IRHN8150 IRHN7250
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IRHN7150
IRHN8150
IRHN7250
IRHN8250
IRHN7450
IRHN8450
IRHE7110
IRHE8110
IRHE7130
IRHE8130
IRHC7110
IRHC7130
IRHC7150
D47 MOSFET
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MO-D36AB
Abstract: IRF9510 SEC IRF510 SEC 2n6845 jantx D 10.7 A IRF540 smd irf740 STAND FOR irfm9230 2N7237 JANTXV BC 542
Text: Government/ Space Products Products From ir Life, Power-Age, Environmental and Military Testing Capabilities — USA MIL-S-19500 Qualified Life Tests and Power-Age Capabilities A. H ig h te m p e ra tu re sto ra g e life te stin g up to 2 0 0 ° C . 0 . H T R B te st c a p a b ilitie s o v e r 2 5,00 0 p o s itio n s for V G S a n d for
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MIL-S-19500
T0-254AA
T0-204AA/AE
MO-D36AB
IRF9510 SEC
IRF510 SEC
2n6845 jantx
D 10.7 A
IRF540 smd
irf740 STAND FOR
irfm9230
2N7237 JANTXV
BC 542
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IRF1644
Abstract: 12CTQ030-12CT0045 10JQ030-10JQ100 IRL0024 31D003-31D010 IRKT210-16 IRF1401 6cw 78 IRF140-143 IRFT003
Text: International i « r R e c tifie r PART NO./SERIES 100HF20-100HF160. 100JB05L-100JB12L. 10CTF10-10CTF40. 10CTQ140.150. 10D05-10010.
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100HF20-100HF160.
100JB05L-100JB12L.
10CTF10-10CTF40.
10CTQ140
10D05-10010.
10DF1100F8
10JF1-10JF4.
10JQ030-10JQ100.
1OJTF10-10JTF40
10MQ040-10MQ090.
IRF1644
12CTQ030-12CT0045
10JQ030-10JQ100
IRL0024
31D003-31D010
IRKT210-16
IRF1401
6cw 78
IRF140-143
IRFT003
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JANSR2N7261
Abstract: No abstract text available
Text: International lÜRectifier Government and Space HEXFET Power MOSFETs Radiation Hardened N & P Channel R tltJC Max. Pd@ Case rc = ioo°c TC = 25°C Outline A (K/W) (W) Number (1) (2) Pari b v dss Number (V) RDS(on) (Ohms) IRHE7110 100 0.60 3.1 2.0 11 11 IRHE8110
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IRHE7110
IRHE8110
IRHE7130
IRHE8130
IRHE7230
IRHE8230
IRHE9130
IRHN7054
IRHN8054
IRHN7130
JANSR2N7261
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Untitled
Abstract: No abstract text available
Text: INTE RNATIONAL RECTIFIER 2bE D • HflSSMSS OülOlfi? Q ■ Government/ Space Products T-39-ôl International ^¡Rectifier Radiation Hard HEXFETs N-Channel V d s Drain Part Number Source Voltage Volts On-sitata Resistance (Ohms) IRHN7150 IRHN8150 IRHN7250
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T-39-Ã
IRHN7150
IRHN8150
IRHN7250
IRHN8250
IRHN7450
IRHN8450
IRHE7110
IRHE8110
IRHE7130
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Untitled
Abstract: No abstract text available
Text: I n t e r n a t io n a l R e c t if ie r Government and Space Products Part Numb« Wffl bvdss Vota ROS(on) (Ohm) ID* TC«25" 4A"P*) Iq O TolOO* (Amp») Total Dow Riling Rids (St) Pq O Tc»2P (Witts) Fu-ooDwnmd Numbtr _ _ _ _ _ _ _ -_ _ _ _ _ _ _ _ _ _ _
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IRHE7110
IRHE8110
IRHE7130
IRHE8130
IRHE7230
IRHE8230
IRHE9130
IRHE9230
IRHN7054
IRHN8054
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