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    ISOPLUS MOSFET Search Results

    ISOPLUS MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    ISOPLUS MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor 12n60c

    Abstract: 12N60c equivalent 30N120D1 13N50 equivalent 12n60c MOSFET 1200v 30a MOSFET 1000v 30a 30n120d CS20-22MOF1 12N60c MOSFET
    Text: ISOPLUS Summary Title Page Isolated Discrete Packages A4 - 1 ISOPLUS247TM A4 - 2 ISOPLUS i4-PACTM A4 - 3 ISOPLUS247 – ISOPLUS i4-PACTM Isolated Discrete Packages ISOPLUS247™ is the DCB isolated version of the PLUS247™-package TO247 without a mounting hole . The design


    Original     		PDF ISOPLUS247TM ISOPLUS247TM PLUS247TM-package FBO16-08N FBE22-06N1 21-05QC 22-08N 75-01F 21-08i01 transistor 12n60c 12N60c equivalent 30N120D1 13N50 equivalent 12n60c MOSFET 1200v 30a MOSFET 1000v 30a 30n120d CS20-22MOF1 12N60c MOSFET

    IXAN0022

    Abstract: KU4-499 KU4-495 KU4-498 isoplus ixys cross KU4499 isoplus ixys mounting KU3-381 4490 mosfet
    Text: IXAN0022 Capitalizing on the Advantages of ISOPLUS Products Introduction IXYS Corporation offers unique power packages with internal isolation, and performance and reliability advantages. The IXYS isolated packages include ISOPLUS220TM, ISOPLUS247TM, ISOPLUS


    Original     		PDF IXAN0022 ISOPLUS220TM, ISOPLUS247TM, ISOPLUS264 ISOPLUS220, ISOLPUS247 advantKU4-498/X ISOPLUS220 KU4-498/X O-247 IXAN0022 KU4-499 KU4-495 KU4-498 isoplus ixys cross KU4499 isoplus ixys mounting KU3-381 4490 mosfet

    Untitled

    Abstract: No abstract text available
    Text: IXFC 15N80Q HiPerFETTM ISOPLUS 220TM MOSFET VDSS ID25 RDS on Q-Class Electrically Isolated Back Surface = 800 V = 13 A = 0.65 Ω trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg ISOPLUS 220TM Symbol Test Conditions Maximum Ratings


    Original     		PDF 15N80Q 220TM IXFH15N80Q 728B1

    IXYS Extending ISOPLUS-DILTM Package Range Less copper, Less Weight, Better Performance

    Abstract: MOSFET OF K SERIES IXYS GMM 3x160-0055X2 IXYS Corporation power mosfet smd package
    Text: IXYS Extending ISOPLUS-DILTM Package Range Less copper, Less Weight, Better Performance Biel, Switzerland, May 14, 2009 – IXYS Corporation NASDAQ: IXYS announced today the extension of the ISOPLUS-DILTM package range using the latest generation TrenchMVTM


    Original     		PDF

    40N60SCD1

    Abstract: ixkf40n60scd1 IXYS DS 145
    Text: IXKF 40N60SCD1 CoolMOS 1 Power MOSFET VDSS = 600 V ID25 = 41 A RDS on) typ. = 60 mΩ trr = 70 ns with Series Schottky Diode and Ultra Fast Antiparallel Diode in High Voltage ISOPLUS i4-PAC™ ISOPLUS i4-PAC™ 5 DS Preliminary data 1 DF 1 T 2 5 E72873


    Original     		PDF 40N60SCD1 E72873 20110201b 40N60SCD1 ixkf40n60scd1 IXYS DS 145

    Untitled

    Abstract: No abstract text available
    Text: IXKF 40N60SCD1 CoolMOS 1 Power MOSFET VDSS ID25 RDS on) typ. trr with Series Schottky Diode and Ultra Fast Antiparallel Diode = 600 V = 41 A = 60 m = 70 ns in High Voltage ISOPLUS i4-PAC™ ISOPLUS i4-PAC™ 5 DS DF Preliminary data 1 1 2 T 5 E72873 2


    Original     		PDF 40N60SCD1 E72873 20110201b

    1262-33

    Abstract: IXTP44N10T IXTH200N10T ixtp76n075 IXTA60N10T IXTQ130N10T IXTP98N075T IXTP130N10T IXTP240N055T IXTP64N055T
    Text: TrenchMV 55V-100V Power MOSFETs The ISOPLUS™ Advantage All IXYS ISOPLUS packages are manufactured with an internal direct-copper-bonded (DCB) isolated substrate, are UL certified and provide integral backside case isolation. These packages provide high isolation capability (up to 2500V), improve creepage distance and dramatically reduce total thermal resistance.


    Original     		PDF 5V-100V) O-247 PLUS220 ISOPLUS220TM PLUS220SMD O-252 O-220 O-263 1262-33 IXTP44N10T IXTH200N10T ixtp76n075 IXTA60N10T IXTQ130N10T IXTP98N075T IXTP130N10T IXTP240N055T IXTP64N055T

    3x120-0075X2-SMD

    Abstract: GMM 3x180-004x2 IXYS GMM 3x160-0055X2 Measurement of the circuit stray inductance L 3x100-01X1 single phase moulded bridges
    Text: ISSN: 1863-5598 Electronics in Motion and Conversion ZKZ 64717 10-09 October 2009 COVER STORY ISOPLUS-DIL Series Designed for Highest Reliability The GWM series in ISOPLUS-DIL™ package Dual-In-Line has been developed to production standard. It is a transfer moulded module which combines the advantage of a


    Original     		PDF 3x100-01X1-SMD 3x60-015X1-SMD 3x120-0075X2-SMD GMM 3x180-004x2 IXYS GMM 3x160-0055X2 Measurement of the circuit stray inductance L 3x100-01X1 single phase moulded bridges

    32N12

    Abstract: 32N120P
    Text: Preliminary Technical Information PolarTM HiPerFETTM Power MOSFET IXFL32N120P VDSS ID25 RDS on trr ( Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 1200V 24A Ω 340mΩ 300ns ISOPLUS i5-PakTM Symbol Test Conditions


    Original     		PDF IXFL32N120P 300ns 100ms 32N120P 1-22-10-C 32N12

    IXTF200N10T

    Abstract: 200N1
    Text: Preliminary Technical Information IXTF200N10T TrenchMVTM Power MOSFET VDSS ID25 RDS on (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated = 100V = 90A Ω ≤ 7mΩ ISOPLUS i4-PakTM (5-lead) Symbol Test Conditions Maximum Ratings


    Original     		PDF IXTF200N10T 200N10T 9-30-08-D IXTF200N10T 200N1

    20n60c

    Abstract: No abstract text available
    Text: ADVANCE TECHNICAL INFORMATION CoolMOSTM Power MOSFET ISOPLUS220TM IXKC 20N60C Electrically Isolated Back Surface N-Channel Enhancement Mode Low RDS on , High Voltage MOSFET Symbol Test Conditions ISOPLUS 220LVTM Maximum Ratings VDSS TJ = 25°C to 150°C 600


    Original     		PDF ISOPLUS220TM 20N60C 220LVTM O-220LV 728B1 065B1 123B1 20n60c

    20N60C

    Abstract: UPS 380v
    Text: ADVANCE TECHNICAL INFORMATION CoolMOS Power MOSFET ISOPLUS220TM IXKC 20N60C Electrically Isolated Back Surface N-Channel Enhancement Mode Low RDS on , High Voltage MOSFET Symbol Test Conditions ISOPLUS 220LVTM Maximum Ratings VDSS TJ = 25°C to 150°C 600


    Original     		PDF ISOPLUS220TM 20N60C 220LVTM 728B1 065B1 123B1 20N60C UPS 380v

    Untitled

    Abstract: No abstract text available
    Text: PolarHVTM HiPerFET Power MOSFET VDSS ID25 IXFC16N50P RDS on trr (Electrically Isolated Back Surface) = = ≤ ≤ 500V 10A Ω 450mΩ 200ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode ISOPLUS 220TM E153432 Symbol Test Conditions Maximum Ratings


    Original     		PDF IXFC16N50P 200ns 220TM E153432 16N50P 5J-745 5-1-09-C

    13N50

    Abstract: IXTH12N50A
    Text: Power MOSFET IXTC 13N50 VDSS = 500 V ID25 = 12 A RDS on = 0.4 Ω ISOPLUS220TM Electrically Isolated Back Surface N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Preliminary Data Sheet ISOPLUS 220TM Symbol Test Conditions Maximum Ratings VDSS


    Original     		PDF 13N50 ISOPLUS220TM 220TM IXTH12N50A 728B1 13N50

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information IXTF200N10T TrenchMVTM Power MOSFET VDSS ID25 RDS on (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated = 100V = 120A Ω ≤ 6.3mΩ ISOPLUS i4-PakTM (5-lead) Symbol Test Conditions Maximum Ratings


    Original     		PDF IXTF200N10T 338B2

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information TrenchMVTM Power MOSFET VDSS ID25 IXTF200N10T RDS on (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated = 100V = 90A Ω ≤ 7mΩ ISOPLUS i4-PakTM (5-lead) Symbol Test Conditions Maximum Ratings


    Original     		PDF IXTF200N10T 200N10T 9-30-08-D

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM VDSS ID25 IXFL38N100P RDS on trr ( Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 1000V 29A Ω 230mΩ 300ns ISOPLUS i5-PakTM (HV) Symbol Test Conditions


    Original     		PDF IXFL38N100P 300ns 100ms 38N100 7-14-09-D

    tl 078

    Abstract: No abstract text available
    Text: Advance Technical Information PolarTM Power MOSFET HiPerFETTM IXFL38N100P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 1000V 29A Ω 230mΩ 300ns ISOPLUS i5-PakTM (HV) Symbol Test Conditions Maximum Ratings


    Original     		PDF IXFL38N100P 300ns 338B2 tl 078

    123B16

    Abstract: No abstract text available
    Text: Advance Technical Information PolarTM Power MOSFET HiPerFETTM IXFL32N120P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 1200V 24A Ω 340mΩ 300ns ISOPLUS i5-PakTM (HV) Symbol Test Conditions Maximum Ratings


    Original     		PDF IXFL32N120P 300ns 338B2 123B16

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information PolarTM Power MOSFET HiPerFETTM IXFL36N110P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 1100V 26A Ω 260mΩ 300ns ISOPLUS i5-PakTM (HV) Symbol Test Conditions Maximum Ratings


    Original     		PDF IXFL36N110P 300ns 338B2

    IXFC16N50P

    Abstract: 16n50 16N50P F16N f16n50
    Text: IXFC16N50P PolarHVTM HiPerFET Power MOSFET VDSS ID25 RDS on trr (Electrically Isolated Back Surface) = = ≤ ≤ 500V 10A Ω 450mΩ 200ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode ISOPLUS 220TM E153432 Symbol Test Conditions Maximum Ratings


    Original     		PDF IXFC16N50P 200ns 220TM E153432 16N50P 5J-745 5-1-09-C IXFC16N50P 16n50 F16N f16n50

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE TECHNICAL INFORMATION Power MOSFET ISOPLUS220TM IXKC 13N80C VDSS = 800 V ID25 = 13 A Ω RDS on = 290 mΩ Electrically Isolated Back Surface Low RDS(on), High Voltage, CoolMOSTM Superjunction MOSFET Preliminary Data Sheet Symbol Test Conditions ISOPLUS 220


    Original     		PDF ISOPLUS220TM 13N80C 728B1 065B1 123B1

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information IXTF02N450 High Voltage Power MOSFET VDSS ID25 = 4500V = 200mA   625 RDS on (Electrically Isolated Tab) ISOPLUS i4-PakTM N-Channel Enhancement Mode Symbol Test Conditions VDSS TJ = 25C to 150C Maximum Ratings


    Original     		PDF IXTF02N450 200mA 100ms 02N450 H5-P640

    IXUC160N075

    Abstract: No abstract text available
    Text: ADVANCED TECHNICAL INFORMATION Trench Power MOSFET IXUC160N075 VDSS = 75 V ID25 = 160 A Ω RDS on = 6.5 mΩ ISOPLUS220TM Electrically Isolated Back Surface ISOPLUS 220TM Symbol Test Conditions Maximum Ratings G VDSS TJ = 25°C to 150°C 75 V VGS Continuous


    Original     		PDF IXUC160N075 ISOPLUS220TM 220TM 728B1 065B1 123B1 IXUC160N075