MCH3447
Abstract: MCH5824 marking xa
Text: MCH5824 Ordering number : ENN8201 MCH5824 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • Composite type with an N-channel silicon MOSFET MCH3447 and a schottky barrier diode (SS05015)
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MCH5824
ENN8201
MCH3447)
SS05015)
MCH3447
MCH5824
marking xa
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MCH3447
Abstract: MCH5824 IT09125
Text: 注文コード No. N 8 2 0 1 MCH5824 MCH5824 MOSFET : N チャネル MOS 形シリコン電界効果トランジスタ SBD : ショットキバリアダイオード 汎用スイッチングデバイス 特長 ・N チャネル MOS 形電界効果トランジスタ MCH3447 とショットキバリアダイオード(SS05015)を 1 パッケージに
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MCH5824
MCH3447)
SS05015)
900mm2
21805PE
TB-00001213
IT06804
IT06805
MCH3447
MCH5824
IT09125
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marking ZY
Abstract: MCH3447
Text: MCH3447 Ordering number : ENN8200 N-Channel Silicon MOSFET MCH3447 General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol
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MCH3447
ENN8200
900mm2
marking ZY
MCH3447
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SCH2807
Abstract: MARKING QG
Text: SCH2807 Ordering number : ENN8215 SCH2807 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • Composite type with an N-channel silicon MOSFET SCH1407 and a schottky barrier diode (SS05015)
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SCH2807
ENN8215
SCH1407)
SS05015)
SCH2807
MARKING QG
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