ITS15F12P
Abstract: T0247
Text: M ITEL S E M IC O N D U C T O R ITS15F12 Medium Frequency Powerline N-Channel IGBT Supersedes February 1998, version DS4717-2.3 DS4717-3.2 March 1999 Key Parameters The ITS15F12 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for
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ITS15F12
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T0247
ITS15F12P
T0247
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Untitled
Abstract: No abstract text available
Text: S i GEC P L ES SE Y SEPTEMBER 1997 ADVANCE INFORMATION S E M I C O N D U C T O R S DS4717-2.2 ITS15F12 POWERLINE N-CHANNEL IGBT The ITS15F12 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for low power dissipation in a wide range of high voltage
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DS4717-2
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ITS15F12
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