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    ITS15F12P

    Abstract: T0247
    Text: M ITEL S E M IC O N D U C T O R ITS15F12 Medium Frequency Powerline N-Channel IGBT Supersedes February 1998, version DS4717-2.3 DS4717-3.2 March 1999 Key Parameters The ITS15F12 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for


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    PDF ITS15F12 DS4717-2 DS4717-3 ITS15F12 T0247 ITS15F12P T0247

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    Abstract: No abstract text available
    Text: S i GEC P L ES SE Y SEPTEMBER 1997 ADVANCE INFORMATION S E M I C O N D U C T O R S DS4717-2.2 ITS15F12 POWERLINE N-CHANNEL IGBT The ITS15F12 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for low power dissipation in a wide range of high voltage


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    PDF DS4717-2 ITS15F12 ITS15F12