IXFB40N110P Search Results

IXFB40N110P Price and Stock

Filter by Manufacturer


Littelfuse Inc IXFB40N110P MOSFET N-CH 1100V 40A PLUS264
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFB40N110P	Tube	32		1	1 $35.34 10 $35.34 100 $34.6168 1000 $34.6168 10000 $34.6168	Buy Now
Newark	IXFB40N110P	Bulk			300	1 - 10 - 100 - 1000 $36.28 10000 $36.28	Buy Now
RS	IXFB40N110P	Bulk		8 Weeks	25	1 - 10 - 100 $53.54 1000 $53.54 10000 $53.54	Get Quote
IXYS Corporation IXFB40N110P MOSFETs 40 Amps 1100V 0.2600 Rds
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	IXFB40N110P					1 - 10 - 100 - 1000 $34.61 10000 $34.61	Get Quote
TTI	IXFB40N110P	Tube			300	1 - 10 - 100 - 1000 $34.62 10000 $34.62	Buy Now

IXFB40N110P Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IXFB40N110P		IXYS	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1100V 40A PLUS264		Original	PDF

IXFB40N110P Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
IXFB40N110P Abstract: IXFB 40N110P 40n110p F40N Text: PolarTM Power MOSFET HiPerFETTM IXFB40N110P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 1100V 40A Ω 260mΩ 300ns PLUS264TM (IXFB) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ	Original	IXFB40N110P 300ns PLUS264TM 40N110P 3-28-08-A IXFB40N110P IXFB 40N110P F40N	PDF
Untitled Abstract: No abstract text available Text: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFB40N110P VDSS = 1100V ID25 = 40A Ω RDS on ≤ 260mΩ ≤ 300ns trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode PLUS264TM (IXFB) Symbol Test Conditions Maximum Ratings	Original	IXFB40N110P 300ns PLUS264TM 40N110P	PDF
Untitled Abstract: No abstract text available Text: PolarTM Power MOSFET HiPerFETTM VDSS ID25 IXFB40N110P RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 1100V 40A Ω 260mΩ 300ns PLUS264TM (IXFB) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ	Original	IXFB40N110P 300ns PLUS264TM 40N110P 3-28-08-A	PDF
Untitled Abstract: No abstract text available Text: Preliminary Technical Information PolarVHVTM HiPerFET Power MOSFET IXFB40N110P VDSS = ID25 = RDS on ≤ ≤ trr N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ VGSS PLUS264TM (IXFB)	Original	IXFB40N110P 300ns PLUS264TM 338B2	PDF
1200 volt mosfet Abstract: 1000 volt mosfet mosfet 300 volt HiperFET IXFN38N100 sot 227b diode fast transistor polar 2R4N120P IXFN44N100P IXFB44N100P Text: IXYS POWER Efficiency through Technology NE W P R O D UCT B R I E F 1000V to 1200V Polar Standard and HiPerFET Power MOSFETs NEXT GENERATION N-CHANNEL POWER MOSFETS OCTOBER 2007 OVERVIEW These new 1000-1200V Standard and HiPerFETTM additions to the IXYS PolarTM Power MOSFET	Original	000-1200V IXFB30N120P IXFL30N120P IXFN30N120P IXFL32N120P IXFN32N120P PluS220 IXFV110N10PS 1200 volt mosfet 1000 volt mosfet mosfet 300 volt HiperFET IXFN38N100 sot 227b diode fast transistor polar 2R4N120P IXFN44N100P IXFB44N100P	PDF