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Littelfuse Inc IXFH14N80P MOSFET N-CH 800V 14A TO247AD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFH14N80P	Tube	628		1	1 $7.75 10 $7.75 100 $4.80133 1000 $4.00149 10000 $4.00149	Buy Now
Newark	IXFH14N80P	Bulk			300	1 - 10 - 100 - 1000 $4.2 10000 $4.2	Buy Now
RS	IXFH14N80P	Bulk		8 Weeks	30	1 - 10 - 100 $6.19 1000 $6.19 10000 $6.19	Get Quote
IXYS Corporation IXFH14N80 MOSFET N-CH 800V 14A TO247AD
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DigiKey	IXFH14N80	Tube			30	1 - 10 - 100 $8.07433 1000 $8.07433 10000 $8.07433	Buy Now
Mouser Electronics	IXFH14N80					1 - 10 - 100 - 1000 - 10000 -	Get Quote
IXYS Corporation IXFH14N80P MOSFETs DIODE Id14 BVdass800
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Mouser Electronics	IXFH14N80P					1 $7.7 10 $6.84 100 $5.99 1000 $4.74 10000 $4.74	Get Quote
TTI	IXFH14N80P	Tube			300	1 - 10 - 100 - 1000 $4.19 10000 $4.19	Buy Now
TME	IXFH14N80P				1	1 $6.78 10 $5.4 100 $4.84 1000 $4.84 10000 $4.84	Get Quote
IXYS Integrated Circuits Division IXFH14N80P MOSFET DIS.14A 800V N-CH TO247AD POLARHV THT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Ozdisan Elektronik	IXFH14N80P		18			1 $6.86939 10 $6.86939 100 $6.2449 1000 $6.2449 10000 $6.2449	Buy Now

IXFH14N80 Datasheets (3)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IXFH14N80		IXYS	N-Channel Enhancement Mode HiPerFET Power MOSFET		Original	PDF
IXFH14N80		IXYS	800V HiPerFET power MOSFET		Original	PDF
IXFH14N80P		IXYS	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 800V 14A TO-247		Original	PDF

IXFH14N80 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
IXFH15N80 Abstract: 15n80 14N80 DS965 IXFH14N80 125OC Text: HiPerFETTM Power MOSFETs VDSS N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family IXFH14N80 IXFH15N80 Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 800 800 V V VGS VGSM Continuous Transient	Original	IXFH14N80 IXFH15N80 14N80 15N80 125OC 728B1 IXFH15N80 15n80 14N80 DS965 IXFH14N80 125OC	PDF
Untitled Abstract: No abstract text available Text: HiPerFETTM Power MOSFETs VDSS N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family IXFH14N80 IXFH15N80 Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 800 800 V V VGS VGSM Continuous Transient	Original	IXFH14N80 IXFH15N80 14N80 15N80 125OC 728B1	PDF
MJ 73 Abstract: 14n80 Text: VDSS HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family ID25 800 V 14 A 800 V 15 A trr £ 250 ns IXFH14N80 IXFH15N80 RDS on 0.70 W 0.60 W Preliminary data Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW	Original	IXFH14N80 IXFH15N80 14N80 15N80 O-247 Figure10. MJ 73	PDF
14N80 Abstract: 15N80 125OC IXFH14N80 IXFH15N80 Text: VDSS HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family ID25 800 V 14 A 800 V 15 A trr £ 250 ns IXFH14N80 IXFH15N80 RDS on 0.70 W 0.60 W Preliminary data Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW	Original	IXFH14N80 IXFH15N80 14N80 15N80 Figure10. 125OC 14N80 15N80 125OC IXFH14N80 IXFH15N80	PDF
Untitled Abstract: No abstract text available Text: HiPerFETTM Power MOSFETs VDSS N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family IXFH14N80 IXFH15N80 Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 800 800 V V VGS VGSM Continuous Transient	Original	IXFH14N80 IXFH15N80 14N80 15N80 O-247 125OC	PDF
IXFH32N50Q equivalent Abstract: ixfk24n100 IXFD80N20Q-8X IXFN80N50 1672 mos-fet IXFH40N30 Text: HiPerFETTM Power MOSFET Chips N-Channel Enhancement-Mode with Fast Intrinsic Diode Type VDSS max. TJM = 150°C RDS on @ ID max. Ciss trr max. Chip type Chip size dimensions Source ¬ bond wire recommend Equivalent device data sheet Dim. outline No. V Ω	Original	IXFD50N20-7X IXFD50N20Q-7X IXFD80N20Q-8X IXFD90N20Q-8Y IXFD120N20-9X IXFD180N20-9Y IXFD60N25Q-8X IXFD100N25-9X IXFD40N30-7X IXFD40N30Q-7X IXFH32N50Q equivalent ixfk24n100 IXFN80N50 1672 mos-fet IXFH40N30	PDF
IXTD08N100P-1A Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2 Text: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types	Original		PDF
IRF1830G Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696 Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Inﬁneon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23	Original	AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696	PDF
Untitled Abstract: No abstract text available Text: HiPerFETTM Power MOSFETs IXFH 15N80Q IXFT 15N80Q Q-Class VDSS ID25 RDS on Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW 800 800 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25 TC = 25°C 15 A IDM TC = 25°C, pulse width limited by TJM	Original	15N80Q O-247 O-268 125OC Figure10.	PDF
sd 20n60 Abstract: IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80 Text: HiPerFETTM F-Series HiPerFETTM Power MOSFETs with Fast Intrinsic Diode HiPerFETTM F-Series Contents VDSS max V ID cont RDS(on) TC = 25 °C TC = 25 °C Ω A TO-247 (IXFH) PLUS247 (IXFX) ISOPLUS247TM (IXFR) TO-268 (IXFT) TO-264 (IXFK) miniBLOC (IXFN) ä IXFT 80N06	Original	O-247 PLUS247 ISOPLUS247TM O-268 O-264 80N06-11 76N07-11 76N07-12 100N10 170N10 sd 20n60 IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80	PDF
IXFd50n20 Abstract: IXGD32N60B IXFD75N10 IXTD5N100 IXTH40N25 91x0 IXGH25N120A IXTD5N100-5T IXGD32N60B-5X IXGD8N100-2L Text: Chips and DCB Ceramic Substrates Contents Page General Information for Chips IGBT Chips J-2 VCES IC VCE sat G-Series, Low VCE(sat) type G-Series, High Speed type 600 - 1200 V 600 - 1200 V 10 - 60 A 10 - 100 A 1.8 - 3.5 V 2.5 - 4.0 V J-3 S-Series, Low VCE(sat) type	Original		PDF
IXFH15N100 Abstract: 2N3051 IXFX15N100 IXFH40N30 IXFM6N90 IRFP450R IXTH24N50L IXTH26N50 IXFH20N50 IXFH9N80 Text: STI Type: IRFP354 Notes: Breakdown Voltage: 450 Continuous Current: 14 RDS on Ohm: 0.35 Trans Conductance Mhos: 5.9 Trans Conductance A: 8.4 Gate Threshold min: 2.0 Gate Threshold max: 4.0 Resistance Switching ton: 14 TYP Resistance Switching toff: 89 TYP	Original	IRFP354 O-247 IRFP360LC 2N3049DIE 2C3049 O-204AA/TO-3 IXTM20N55A IXFH15N100 2N3051 IXFX15N100 IXFH40N30 IXFM6N90 IRFP450R IXTH24N50L IXTH26N50 IXFH20N50 IXFH9N80	PDF
15N80Q Abstract: 15N80 125OC IXFH14N80 IXFH15N80 Text: HiPerFETTM Power MOSFETs IXFH 15N80Q IXFT 15N80Q Q-Class VDSS ID25 RDS on Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW 800 800 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25 TC = 25°C 15 A IDM TC = 25°C, pulse width limited by TJM	Original	15N80Q O-247 O-268 125OC Figure10. 15N80Q 15N80 125OC IXFH14N80 IXFH15N80	PDF
15N80Q Abstract: No abstract text available Text: HiPerFETTM Power MOSFETs IXFH 15N80Q IXFT 15N80Q Q-Class VDSS ID25 RDS on Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW 800 800 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25 TC = 25°C 15 A IDM TC = 25°C, pulse width limited by TJM	Original	15N80Q 15N80Q O-247 O-268 125OC Figure10.	PDF

IXFD14N80 Abstract: CMP 3.48 ixfh50n20 1XFH12N90 IXFN170N10 diode 348 IXFD110N20 IXFD76N07-12 IXFD21N50 IXFH21N50 Text: OIXYS HiPerFET Power MOSFET Chips N-Channel Enhancement-Mode with Fast Intrinsic Diode Type v c * D6S tN BL tn CMp max yp Chip elze Source 3 b e n tlw li« Equivalent device dutaahaet T * * tS O * G out line NO PF na 70 0.012 5 4400 200 IX77 8 .8 4 x 7 .1 9	OCR Scan	IXFD76N07-12 XFD67N10 IXFD75N10 IXFD170N10 IXFD42N20 IXFD50N20 IXFD68N20 1XFD90N20Q IXFD110N20 IXFD35N30 IXFD14N80 CMP 3.48 ixfh50n20 1XFH12N90 IXFN170N10 diode 348 IXFD76N07-12 IXFD21N50 IXFH21N50	PDF
ne 22 mosfet Abstract: IXFH26N60Q IXFT12N100Q IXFR100N25 IXFN26N90 FN230 IXFN36N60 N50P IXFN44N50U2 IXFN80N50 Text: HiPerFET Power MOSFETs L° w Gate-Ch TVPeS = S u „t9 Q Avalanche rated with Fast Intrinsic Diode VDSS Max. V p DSON Wort) Tc=25 C T_=25 C A m l) G on) ISOPLUS220™ (C) ISOPLUS247™V T0268 TO-263 TO-220 PLU S 247™ ^^ l3PAK (x > .4 TO-247 ‘ (H)	OCR Scan	ISOPLUS220TM ISOPLUS247TMV T0268 T0264 OT227B O-263 O-220 247TM O-247 O-204 ne 22 mosfet IXFH26N60Q IXFT12N100Q IXFR100N25 IXFN26N90 FN230 IXFN36N60 N50P IXFN44N50U2 IXFN80N50	PDF
POWER MOSFET 4600 Abstract: MOSFET 4600 4600 mosfet IXFD80N20Q-8X IXFD40N30-7X IXFX90N20Q 1219X IXFN80N50 IXFn44N80 IXFN39N90 Text: HiPerFET Power MOSFET Chips N-Channel Enhancement-Mode with Fast Intrinsic Diode B Type " dbmm e«» m ax. m ax. m ax. Chip typ * Chip sue cHmehsfons Tm = 150°C V Q A 1XFD76N07-7X IXFD180N07-9X IXFD340N07-9Y 70 0.012 0.006 0.004 IXFD67N10-7X XFD75N10-7X	OCR Scan	1XFD76N07-7X IXFD180N07-9X IXFD340N07-9Y IXFD67N10-7X XFD75N10-7X IXFD75N10Q-7X XFD80N100-8X XFD170N10-9X XFD230N10-9Y IXFD70N15-7X POWER MOSFET 4600 MOSFET 4600 4600 mosfet IXFD80N20Q-8X IXFD40N30-7X IXFX90N20Q 1219X IXFN80N50 IXFn44N80 IXFN39N90	PDF