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    IXFK20N Search Results

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    IXFK20N Price and Stock

    Littelfuse Inc IXFK20N120P

    MOSFET N-CH 1200V 20A TO264AA
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    DigiKey IXFK20N120P Tube 3 300
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    Newark IXFK20N120P Bulk 300
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    RS IXFK20N120P Bulk 8 Weeks 25
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    IXYS Corporation IXFK20N80Q

    MOSFET N-CH 800V 20A TO264AA
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    DigiKey IXFK20N80Q Tube
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    IXYS Corporation IXFK20N120

    MOSFET N-CH 1200V 20A TO264AA
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    DigiKey IXFK20N120 Tube 25
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    Mouser Electronics IXFK20N120
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    New Advantage Corporation IXFK20N120 17 1
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    IXYS Corporation IXFK20N120P

    MOSFETs 20 Amps 1200V 1 Rds
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    Mouser Electronics IXFK20N120P
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    TTI IXFK20N120P Tube 300
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    TME IXFK20N120P 1
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    IXYS Integrated Circuits Division IXFK20N120

    MOSFET DIS.20A 1200V N-CH TO264 HIPERFET THT
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    Ozdisan Elektronik IXFK20N120 21
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    Find more IXFK20N price and stock on Findchips.com

    IXFK20N Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXFK20N120 IXYS Discrete MOSFETs: HiPerFET Power MOSFETS Original PDF
    IXFK20N120P IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1200V 20A TO-264 Original PDF
    IXFK20N80Q IXYS 800V HiPerFET power MOSFET Q-class Original PDF

    IXFK20N Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information HiPerFETTM Power MOSFETs IXFH20N80Q IXFK20N80Q IXFT20N80Q Q-Class VDSS = 800 V = 20 A ID25 RDS on = 0.42 W trr £ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings VDSS


    Original     		O-247 O-268 O-264 IXFH20N80Q IXFK20N80Q IXFT20N80Q PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFK20N120P IXFX20N120P VDSS ID25 = 1200V = 20A Ω ≤ 570mΩ ≤ 300ns RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode trr TO-264 (IXFK) Symbol Test Conditions Maximum Ratings


    Original     		IXFK20N120P IXFX20N120P 300ns O-264 PLUS247 20N120P PDF

    PLUS247

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs VDSS = 800 V ID25 = 20 A RDS on = 0.42 Ω IXFK20N80Q IXFX20N80Q Q-Class trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary Data Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C


    Original     		O-264 IXFK20N80Q IXFX20N80Q PLUS-247 728B1 123B1 065B1 PLUS247 PDF

    Untitled

    Abstract: No abstract text available
    Text: PolarTM Power MOSFET HiPerFETTM IXFK20N120P IXFX20N120P VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode trr TO-264 (IXFK) Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ 1200 1200 V V


    Original     		IXFK20N120P IXFX20N120P 300ns O-264 20N120P 04-03-08-B PDF

    IXFK20N120P

    Abstract: IXFX20N120P IXFX20N120 IXFK20N120 PLUS247 DS99854B
    Text: PolarTM Power MOSFET HiPerFETTM IXFK20N120P IXFX20N120P VDSS ID25 = 1200V = 20A Ω ≤ 570mΩ ≤ 300ns RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode trr TO-264 (IXFK) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C


    Original     		IXFK20N120P IXFX20N120P 300ns O-264 20N120P 04-03-08-B IXFK20N120P IXFX20N120P IXFX20N120 IXFK20N120 PLUS247 DS99854B PDF

    IXFH20N80Q

    Abstract: IXFK20N80Q IXFT20N80Q IXFT20N80
    Text: Advanced Technical Information HiPerFETTM Power MOSFETs IXFH20N80Q VDSS = 800 V IXFK20N80Q ID25 = 20 A IXFT20N80Q RDS on = 0.42 W Q-Class trr £ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings VDSS


    Original     		IXFH20N80Q IXFK20N80Q IXFT20N80Q O-247 IXFT20N80 PDF

    IXFH20N80Q

    Abstract: IXFK20N80Q IXFT20N80Q
    Text: HiPerFETTM Power MOSFETs VDSS = 800 V ID25 = 20 A RDS on = 0.42 Ω IXFH20N80Q IXFK20N80Q IXFT20N80Q Q-Class trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary Data Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C


    Original     		IXFH20N80Q IXFK20N80Q IXFT20N80Q O-247 728B1 IXFH20N80Q IXFK20N80Q IXFT20N80Q PDF

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs IXFH20N80Q IXFK20N80Q IXFT20N80Q Q-Class trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary Data Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 800 800


    Original     		IXFH20N80Q IXFK20N80Q IXFT20N80Q O-247 728B1 PDF

    sd 20n60

    Abstract: IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80
    Text: HiPerFETTM F-Series HiPerFETTM Power MOSFETs with Fast Intrinsic Diode HiPerFETTM F-Series Contents VDSS max V ID cont RDS(on) TC = 25 °C TC = 25 °C Ω A TO-247 (IXFH) PLUS247 (IXFX) ISOPLUS247TM (IXFR) TO-268 (IXFT) TO-264 (IXFK) miniBLOC (IXFN) ä IXFT 80N06


    Original     		O-247 PLUS247 ISOPLUS247TM O-268 O-264 80N06-11 76N07-11 76N07-12 100N10 170N10 sd 20n60 IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80 PDF

    Untitled

    Abstract: No abstract text available
    Text: □ IXYS Advanced Technical Information HiPerFET Power MOSFETs Q-Class IXFH20N80Q IXFK20N80Q IXFT20N80Q V DSS = ^D25 ” RDS on 800 V 20 A — 0.42 n t < 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Q g, High dv/dt rr {&• V . os Maximum Ratings


    OCR Scan     		IXFH20N80Q IXFK20N80Q IXFT20N80Q O-247 PDF

    20N80Q

    Abstract: No abstract text available
    Text: DIXYS Advanced Technical Information HiPerFET Power MOSFETs IXFH 20N80Q IXFK20N 80Q IXFT 20N80Q Maximum Ratings V VDGR Tj =25°C to150°C T,J = 25°C to 150°C;’ R_. = 1 M ii OS 800 800 V V Vos v GSM Continuous Transient ±20 ±30 V V 20 80 20 A A A 45


    OCR Scan     		20N80Q IXFK20N 20N80Q to150 O-247 O-268 O-264 PDF

    ne 22 mosfet

    Abstract: IXFH26N60Q IXFT12N100Q IXFR100N25 IXFN26N90 FN230 IXFN36N60 N50P IXFN44N50U2 IXFN80N50
    Text: HiPerFET Power MOSFETs L° w Gate-Ch TVPeS = S u „t9 Q Avalanche rated with Fast Intrinsic Diode VDSS Max. V p DSON Wort) Tc=25 C T_=25 C A m l) G on) ISOPLUS220™ (C) ISOPLUS247™V T0268 TO-263 TO-220 PLU S 247™ ^^ l3PAK (x > .4 TO-247 ‘ (H)


    OCR Scan     		ISOPLUS220TM ISOPLUS247TMV T0268 T0264 OT227B O-263 O-220 247TM O-247 O-204 ne 22 mosfet IXFH26N60Q IXFT12N100Q IXFR100N25 IXFN26N90 FN230 IXFN36N60 N50P IXFN44N50U2 IXFN80N50 PDF