IXGH22N50B
Abstract: IXGH22N50BU1 IXGH22N50BU1S smd diode 819 To-247 Jedec package outline
Text: Preliminary data TM HiP erF AST HiPerF erFAST with Diode IXGH22N50B U1 IXGH22N50BU1 IXGH22N50B U1S IXGH22N50BU1S IGBT Combi P ac k Pac ack VCES IC 25 VCE(sat)typ tfi(typ) = 500 V = 44 A = 2.1 V = 55 ns TO-247 SMD* Symbol Test Conditions Maximum Ratings VCES
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IXGH22N50BU1
IXGH22N50BU1S
O-247
IXGH22N50B
IXGH22N50BU1
IXGH22N50BU1S
smd diode 819
To-247 Jedec package outline
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IXGH22N50B
Abstract: IXGH22N50BS
Text: Preliminary data IXGH22N50B IXGH22N50BS HiP erF ASTTM IGBT HiPerF erFAST VCES IC 25 VCE(sat)typ tfi(typ) = 500 V = 44 A = 2.1 V = 55 ns TO-247 SMD* Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ 500 500 V V VGES VGEM
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IXGH22N50B
IXGH22N50BS
O-247
IXGH22N50B
IXGH22N50BS
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IXFd50n20
Abstract: IXGD32N60B IXFD75N10 IXTD5N100 IXTH40N25 91x0 IXGH25N120A IXTD5N100-5T IXGD32N60B-5X IXGD8N100-2L
Text: Chips and DCB Ceramic Substrates Contents Page General Information for Chips IGBT Chips J-2 VCES IC VCE sat G-Series, Low VCE(sat) type G-Series, High Speed type 600 - 1200 V 600 - 1200 V 10 - 60 A 10 - 100 A 1.8 - 3.5 V 2.5 - 4.0 V J-3 S-Series, Low VCE(sat) type
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smd A1 t
Abstract: No abstract text available
Text: □ IXYS Preliminary data IXGH22N50B IXGH22N50BS HiPerFAST IGBT V CES 500 V 44 A 2.1 V 55 ns ^C 25 V C E(sat)typ ^fi(typ) TO-247 SMD* Symbol Test Conditions v v*C G R T j = 25°C to 150°C T j = 25°C to 150°C; RGE = 1 M£i 500 500 V V v v*G E M Continuous
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IXGH22N50B
IXGH22N50BS
O-247
smd A1 t
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Untitled
Abstract: No abstract text available
Text: HiPerFAST IGBT with Diode VCES I IXGH22N50BU1 ix g h 22N50BU i s = 500 V = 44 A Preliminary data Symbol Test Conditions Maximum Ratings V VCGfl T, = 25°C to 150°C T , = 25°C to 150°C; RGE = 1 Mi2 500 500 V V VGES VGEM Continuous T ransient ±20 ±30
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IXGH22N50BU1
22N50BU
B2-13
22N50BU1
22NS0BU1S
----------------TVJ-125
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Untitled
Abstract: No abstract text available
Text: Preli mi nary data IXGH22N50B IXGH22N50BS HiPerFAST IGBT 500 V 44 A 2.1 V 55 ns v,E! 'e m CE sat typ ^fl(typ) TO-247SMD* Symbol Test Conditions VCES vCGR ^ = 25°C to 150°C Td = 25°C to 150°C; RGE = 1 Mi2 500 500 V V VGES vGEM Continuous Transient ±20
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IXGH22N50B
IXGH22N50BS
O-247SMD*
T0-247
O-247
Emi11er
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Untitled
Abstract: No abstract text available
Text: □IXYS Preliminary data IXGH22N50BU1 IXGH22N50BU1S HiPerFAST IGBT with Diode V CES 500 V 44 A 2.1 V 55 ns ^C 25 V CE(sat)typ Combi Pack ^fi(typ) ?C G f| TO-247 SMD* Symbol Test Conditions V VCGH Ta= 25°C to 150°C v oE Maximum Ratings m T,J = 25°C to 150°C; FU
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IXGH22N50BU1
IXGH22N50BU1S
O-247
4bflb22b
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Untitled
Abstract: No abstract text available
Text: • lililí! Preliminary data IXGH22N50BU1 IXGH22N50BU1S HiPerFAST IGBT with Diode v0E, u, CE sat typ Combi Pack ^fi(typ) 500 V 44 A 2.1 V 55 ns TO-247SMD* Symbol Test Conditions VCES VCOR Jj 25°C to 150°C T,J = 25°C to 150°C; Rb t VGES VQEM Continuous
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IXGH22N50BU1
IXGH22N50BU1S
O-247SMD*
O-247
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Untitled
Abstract: No abstract text available
Text: OIXYS HiPerFAST IGBT IXGH22N50B IXGH22N50BS v CES ^C 25 ^ C E ( s a t ) ty p ^fi(typ) 500 V 44 A 2.1 V 55 ns Preliminary data Sym bol Test Conditions V V ¥ CGR Tj = 25°C to 150°C T j = 25°C to 150°C; RGE = 1 M f i 500 5 00 V V v v’ C o n tin uous
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IXGH22N50B
IXGH22N50BS
O-247
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IXGD40N60A
Abstract: 1XGH10N60 xgh10n60a IXGD30N60 IXGD10N60 IXGH40N60 IXGH50N60A 1X57 IXGD40N60 IXGH60N60
Text: IXYS Insulated Gate Bipolar Transistors IGBT-Chips Type e» High Speed Low T j. s is ir c £ tn typ 28°C ns C hip typ V V A S* IXGD28N30 IXGD40N30 300 1.8 1.45 20 20 1500 2500 180 220 1X43 1X57 IXGD10N60 IXGD20N60 IXGD31N60 IXGD30N60 IXGD38N60 IXGD40N60
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IXGD28N30
IXGD40N30
IXGD10N60
IXGD20N60
IXGD31N60
IXGD30N60
IXGD38N60
IXGD40N60
IXGD60N60
IXGD200N60
IXGD40N60A
1XGH10N60
xgh10n60a
IXGH40N60
IXGH50N60A
1X57
IXGH60N60
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IXGH24N50B
Abstract: IXGH50N60B IXGH32N60B IXGH50N60A ixgh24n60a equivalent IXGH24N60A IXGH17N100
Text: nixYS Insulated Gate Bipolar Transistors IGBT-Chips v Type •• c «V- Chip typ - tn » Chip s o b dbnemtons Source bm d wire »C Tj„ = l&O'C TO Equivalent device datasheet Dim. out line V V A pF IXGD28N30-43 IXGD40N30-5X 300 2.1 1.5 20 20 1500 2500
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IXGD28N30-43
IXGD40N30-5X
IXGD12N60B-33
IXGD31N60-4X
IXGD41N60-5X
IXGD60N60-7X
IXGD200N60-9X
IXGD8N100-2L
IXGD12N100-33
IXGD17N100-4T
IXGH24N50B
IXGH50N60B
IXGH32N60B
IXGH50N60A
ixgh24n60a equivalent
IXGH24N60A
IXGH17N100
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