30N30
Abstract: No abstract text available
Text: HiPerFASTTM IGBT IXGH30N30 VCES IC25 VCE sat tfi = = = = 300 V 60 A 1.6 V 180 ns Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 300 V VGES Continuous ±20 V VGEM Transient ±30
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IXGH30N30
O-247
30N30
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30n30
Abstract: IXGH30N30
Text: HiPerFASTTM IGBT IXGH30N30 VCES IC25 VCE sat tfi = = = = 300 V 60 A 1.6 V 180 ns Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 300 V VGES Continuous ±20 V VGEM Transient ±30
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IXGH30N30
O-247
30N30
30n30
IXGH30N30
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Untitled
Abstract: No abstract text available
Text: IXGH30N30 Transistors N-Channel IGBT V BR CES (V)250 V(BR)GES (V)20 I(C) Max. (A)60 Absolute Max. Power Diss. (W)200 Minimum Operating Temp (øC)-55 Maximum Operating Temp (øC)150õ Thermal Resistance Junc-Case620m Thermal Resistance Junc-Amb. g(fe) Min. (S) Trans. admitt.
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IXGH30N30
Junc-Case620m
delay100nÃ
time200nÃ
time700nÃ
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200n60
Abstract: 20N30 n60c 50N60 7N60B IC IGBT 25N120 IC600 80n60 60n60 igbt 25N120
Text: HiPerFASTTM IGBT G-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode HiPerFASTTM IGBT G-Series Contents IGBT VCES V 300 Low VCE(sat) 600 1000 TO-220 TO-263 TO-247 IC VCE(sat) (IXGP) (IXGA) (IXGH) max TC = 25 °C TC=25 °C A V 40 56 60 40
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PLUS247
20N30
28N30
30N30
40N30
31N60
38N60
41N60
60N60
O-264
200n60
20N30
n60c
50N60
7N60B
IC IGBT 25N120
IC600
80n60
60n60 igbt
25N120
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96542B
Abstract: 30N30 GEM X 365
Text: g ix Y S HiPerFAST IGBT IXGH30N30 IXGH30N30S V CES 300 60 1.6 180 ^C25 V CE sat tfi V A V ns Preliminary data Symbol TestConditions v CES Td = 25°C to 150°C 300 V V CGR Td = 25°C to 150°C; RGE = 1 Mß 300 V v GES Continuous ±20 V v GEM Transient ±30
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OCR Scan
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IXGH30N30
IXGH30N30S
O-247
96542B
30N30
GEM X 365
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30N30
Abstract: 96542B
Text: HiPerFAST IGBT IXGH30N30 IXGH30N30S vCES *C25 VCE sat 300 60 1.6 180 V A V ns Preliminary data Symbol Test Conditions VCES Tj = 25°Cto150°C 300 V vCGR ^ = 25°Cto150°C; RGE = 1 MO 300 V vGES Continuous ±20 V VGEM Transient ±30 V 60 A 30 A 120 A Maximum Ratings
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IXGH30N30
IXGH30N30S
Cto150
O-247
30N30
96542B
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30N30S
Abstract: No abstract text available
Text: aixYS HiPerFAST IGBT IXGH30N30 IXGH30N30S CES C25 v" CE sat *fi 300 60 1.6 180 V A V ns Preliminary data Symbol Test Conditions v* CES v CGR Tj = 25°C to 150°C 300 V Tj = 25°C to 150°C; Rge = 1 MQ 300 V V» Continuous ±20 V VeEM T ransient ±30 V
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IXGH30N30
IXGH30N30S
O-247
30N30S
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IXGH30N30
Abstract: DIXYS
Text: DIXYS HIPerFAST IGBT IXGH30N30 VCES ^C25 V CE sat tfi = = = = 300 60 1.6 180 V A V ns P re lim in a ry d a ta Symbol Test Conditions V CES ^ Maxi mum Ratings = 25°C to 150°C 300 V = 25°C to 150°C; RGE = 1 M il 300 V Continuous ±20 V Transient ±30
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IXGH30N30
125oC
DIXYS
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