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IXYS Corporation IXGH56N60B3D1 IGBT PT 600V TO-247AD
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IXGH56N60B3 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IXGH56N60B3D1		IXYS	IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 330W TO247		Original	PDF

IXGH56N60B3 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: IXGH56N60B3D1 GenX3TM 600V IGBT w/ Diode VCES = = IC110 VCE sat  600V 56A 1.80V Medium-Speed-Low-Vsat PT IGBT 5-40kHz Switching TO-247 Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M 600 600 V	Original	IXGH56N60B3D1 IC110 5-40kHz O-247	PDF
Untitled Abstract: No abstract text available Text: Advance Technical Information GenX3TM 600V IGBT VCES = IC110 = VCE sat ≤ IXGH56N60B3 600V 56A 1.80V Medium-Speed Low Vsat PT IGBT 5 - 40 kHz Switching TO-247 Symbol Test Conditions Maximum Ratings VCES VCGR TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ	Original	IC110 IXGH56N60B3 O-247 56N60B3 5-05-08-B	PDF
IXGH56N60B3 Abstract: 5-05-08-B IXYS Corporation Text: Advance Technical Information IXGH56N60B3 GenX3TM 600V IGBT VCES = IC110 = VCE sat ≤ 600V 56A 1.80V Medium-Speed Low Vsat PT IGBT 5 - 40 kHz Switching TO-247 Symbol Test Conditions Maximum Ratings VCES VCGR TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ	Original	IXGH56N60B3 IC110 O-247 56N60B3 5-05-08-B IXGH56N60B3 5-05-08-B IXYS Corporation	PDF
IXGH56N60B3D1 Abstract: IXGH 56N60B3 Text: IXGH56N60B3D1 GenX3TM 600V IGBT VCES = IC110 = VCE sat ≤ Medium speed low Vsat PT IGBTs 5-40 kHz switching Symbol Test Conditions TO-247 (IXGH) Maximum Ratings VCES VCGR TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ VGES VGEM 600 600 V V Continuous	Original	IXGH56N60B3D1 IC110 O-247 IXGH56N60B3D1 IXGH 56N60B3	PDF
Untitled Abstract: No abstract text available Text: GenX3TM 600V IGBT VCES = IC110 = VCE sat ≤ IXGH56N60B3D1 Medium speed low Vsat PT IGBTs 5-40 kHz switching Symbol Test Conditions TO-247 (IXGH) Maximum Ratings VCES VCGR TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ VGES VGEM 600 600 V V Continuous	Original	IC110 IXGH56N60B3D1 O-247	PDF
IXTD08N100P-1A Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2 Text: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types	Original		PDF
Inverter Welder Abstract: inverter welder circuit resonant inverter for welding smps welder inverter resonant converter for welding IXGR48N60C3D1 600V igbt dc to dc boost converter IXGH48N60C3D1 SMPS INVERTER FULL BRIDGE FOR WELDING full bridge inverter Text: IXYS POWER Efficiency through Technology NEW 600V GenX3 IGBTs PRO D UC T next generation 600V IGBTs for power conversion applications january 2009 OVERVIEW IXYS extends its GenX3TM insulated gate bipolar transistor IGBT product line to 600 volts. These new IGBTs are manufactured using IXYS’ state-of-the-art GenX3TM	Original	PB60IGBTA3B3C3 Inverter Welder inverter welder circuit resonant inverter for welding smps welder inverter resonant converter for welding IXGR48N60C3D1 600V igbt dc to dc boost converter IXGH48N60C3D1 SMPS INVERTER FULL BRIDGE FOR WELDING full bridge inverter	PDF