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    IXGH60N60C3 Price and Stock

    IXYS Corporation IXGH60N60C3

    IGBT 600V 75A 380W TO247AD
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    DigiKey IXGH60N60C3 Tube 30
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    IXYS Corporation IXGH60N60C3D1

    IGBT 600V 75A 380W TO247AD
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    DigiKey IXGH60N60C3D1 Tube 1
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    Mouser Electronics IXGH60N60C3D1 304
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    Newark IXGH60N60C3D1 Bulk 213 1
    • 1 $12.98
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    TTI IXGH60N60C3D1 Tube 300 30
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    TME IXGH60N60C3D1 350 1
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    IXGH60N60C3 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXGH60N60C3 IXYS IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 75A 380W TO247AD Original PDF
    IXGH60N60C3D1 IXYS IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 75A 380W TO247AD Original PDF

    IXGH60N60C3 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information GenX3TM 600V IGBT IXGH60N60C3 VCES IC110 VCE sat tfi (typ) High Speed PT IGBTs for 40-100kHz switching = = ≤ = 600V 60A 2.5V 55ns TO-247 AD (IXGH) Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		PDF 40-100kHz IXGH60N60C3 IC110 O-247 60N60C3 02-12-08-B

    Untitled

    Abstract: No abstract text available
    Text: GenX3TM 600V IGBTs with Diode VCES IC110 VCE sat tfi (typ) IXGH60N60C3D1 IXGT60N60C3D1 High Speed PT IGBTs for 40-100kHz switching = = ≤ = 600V 60A 2.5V 50ns TO-247 (IXGH) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		PDF IC110 IXGH60N60C3D1 IXGT60N60C3D1 40-100kHz O-247 IF110 60N60C3 01-15-10-E

    ixgh60n60c3

    Abstract: G60N60 G60N 60N60C3 siemens igbt inverters 02-23-09-D
    Text: IXGH60N60C3 GenX3TM C3-Class IGBT VCES IC110 VCE sat tfi (typ) High Speed PT IGBT for 40-100kHz Switching = = ≤ = 600V 60A 2.5V 50ns TO-247 AD Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Maximum Ratings 600 600


    Original     		PDF IXGH60N60C3 IC110 40-100kHz O-247 60N60C3 02-23-09-D ixgh60n60c3 G60N60 G60N siemens igbt inverters 02-23-09-D

    IXGH60N60C3D1

    Abstract: G60N60 g60n 01-15-10-E IXGT60N60C3D1 IF110 ixgh60
    Text: GenX3TM 600V IGBTs with Diode IXGH60N60C3D1 IXGT60N60C3D1 VCES IC110 VCE sat tfi (typ) High Speed PT IGBTs for 40-100kHz switching = = ≤ = 600V 60A 2.5V 50ns TO-247 (IXGH) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		PDF IXGH60N60C3D1 IXGT60N60C3D1 IC110 40-100kHz O-247 IF110 60N60C3 01-15-10-E IXGH60N60C3D1 G60N60 g60n 01-15-10-E IXGT60N60C3D1 IF110 ixgh60

    ixgh60n60c3

    Abstract: G60N60
    Text: IXGH60N60C3 GenX3TM 600V IGBT VCES IC110 VCE sat tfi (typ) High Speed PT IGBT for 40-100kHz Switching = = ≤ = 600V 60A 2.5V 50ns TO-247 AD Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Maximum Ratings 600 600 V V


    Original     		PDF IXGH60N60C3 IC110 40-100kHz O-247 60N60C3 01-15-10-E ixgh60n60c3 G60N60

    Untitled

    Abstract: No abstract text available
    Text: GenX3TM 600V IGBT VCES IC110 VCE sat tfi (typ) IXGH60N60C3 High Speed PT IGBT for 40-100kHz Switching = = ≤ = 600V 60A 2.5V 50ns TO-247 AD Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Maximum Ratings 600 600 V V


    Original     		PDF IC110 IXGH60N60C3 40-100kHz O-247 60N60C3 01-15-10-E

    G60N60

    Abstract: ixgh60n60c3d1 IXGT60N60C3D1 g60n 60N60C3
    Text: GenX3TM 600V IGBT with Diode IXGH60N60C3D1 IXGT60N60C3D1 VCES IC110 VCE sat tfi (typ) High Speed PT IGBTs for 40-100kHz switching = = ≤ = 600V 60A 2.5V 55ns TO-268 Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		PDF IXGH60N60C3D1 IXGT60N60C3D1 IC110 40-100kHz O-268 G60N60 ixgh60n60c3d1 IXGT60N60C3D1 g60n 60N60C3

    Inverter Welder

    Abstract: inverter welder circuit resonant inverter for welding smps welder inverter resonant converter for welding IXGR48N60C3D1 600V igbt dc to dc boost converter IXGH48N60C3D1 SMPS INVERTER FULL BRIDGE FOR WELDING full bridge inverter
    Text: IXYS POWER Efficiency through Technology NEW 600V GenX3 IGBTs PRO D UC T next generation 600V IGBTs for power conversion applications january 2009 OVERVIEW IXYS extends its GenX3TM insulated gate bipolar transistor IGBT product line to 600 volts. These new IGBTs are manufactured using IXYS’ state-of-the-art GenX3TM


    Original     		PDF PB60IGBTA3B3C3 Inverter Welder inverter welder circuit resonant inverter for welding smps welder inverter resonant converter for welding IXGR48N60C3D1 600V igbt dc to dc boost converter IXGH48N60C3D1 SMPS INVERTER FULL BRIDGE FOR WELDING full bridge inverter