Untitled
Abstract: No abstract text available
Text: IGBT IXGA/IXGP12N100U1 IXGA/IXGP12N100AU1 Combi Pack VCES IC25 VCE sat 1000 V 1000 V 24 A 24 A 3.5 V 4.0 V Preliminary Data Sheet TO-220AB(IXGP) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MW
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IXGA/IXGP12N100U1
IXGA/IXGP12N100AU1
O-220AB
O-263
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IXGA12N100AU1
Abstract: IXGA12N100U1 IXGP12N100AU1 IXGP12N100U1
Text: IGBT IXGA/IXGP12N100U1 IXGA/IXGP12N100AU1 Combi Pack VCES IC25 VCE sat 1000 V 1000 V 24 A 24 A 3.5 V 4.0 V Preliminary Data Sheet TO-220AB(IXGP) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MW
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IXGA/IXGP12N100U1
IXGA/IXGP12N100AU1
O-220AB
O-263
IXGA12N100AU1
IXGA12N100U1
IXGP12N100AU1
IXGP12N100U1
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IXGP12N100U1
Abstract: No abstract text available
Text: VCES IGBT IXGA/IXGP12N100U1 1000 V IXGA/IXGP12N100AU1 1000 V Combi Pack IC25 VCE sat 24 A 24 A 3.5 V 4.0 V Preliminary Data Sheet TO-220AB(IXGP) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MW
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IXGA/IXGP12N100U1
IXGA/IXGP12N100AU1
O-220AB
O-263
IXGP12N100U1
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12N100
Abstract: No abstract text available
Text: IGBT with Diode Low VCE sat High speed IXGA/IXGP12N100U1 IXGA / IX G P 12N100AU1 Symbol Test Conditions V CES T j = 25°C to 150°C 1000 V v CGR T J, = 25°C to 150°C; Rrc = 1 MQ Gfc 1000 V v GES Continuous ±20 V VGEM Transient ±30 V Tc = 25°C 24 A Tc = 90°C
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IXGA/IXGP12N100U1
12N100AU1
O-220
O-263
12N100
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Untitled
Abstract: No abstract text available
Text: Prelim inary Data Sheet V CES IGBT IXGA/IXGP12N100U1 1000 V IXGA/IXGP12N100AU1 1000 V Combi Pack Symbol Tj = 25°C to 150°C 1000 V v CGR T,J = 25°C to 150°C;' RrF = 1 MÜ ijt 1000 V VGES v G EM Continuous ±20 V Transient ±30 V ^C 2 5 T c = 25°C 24 A
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IXGA/IXGP12N100U1
IXGA/IXGP12N100AU1
-263AA
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12N100U1
Abstract: T9lc 12N100AU1
Text: V CES LowVCE sat IGBT with Diode High speed IGBT with Diode IXGA/IXGP12N100U1 IXGA/IXGP12N100AU1 Sym bol Test C onditions VCES Tj = 25°C to 150°C 1000 V Vco* Tj = 25°C to 150°C; RGE = 1 M il 1000 V v GES C ontinuous ±20 V v GEM T ransient ±30 V 'c25
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IXGA/IXGP12N100U1
IXGA/IXGP12N100AU1
standard03
K38Ts
12N100U1
T9lc
12N100AU1
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Untitled
Abstract: No abstract text available
Text: □ 1XYS Preliminary Data Sheet IGBT IXG A /IXG P12N 100U 1 IXGA/IXG P12N100AU1 Combi Pack Symbol Test Conditions V CES Tj = 25°C to 150°C 1000 V VCGR Tj = 25°C to 150°C; RGE= 1 Mi2 1000 V Continuous ±20 V V GEM Transient +30 V ^C25 Tc = 25°C 24 A ^C90
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P12N100AU1
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ixgr32n60cd1
Abstract: IXGT-32N60BD1 IXGH32N60CD1 IXGH24N60CD1 IXGH17N100AU1 IXGK50N60BD1 IXGH24N60BD1 IXGH40N30BD ixgh15n120cd1 IXGH32N60
Text: Discrete IGBTs with FRED Diode U r u G series *C<25> min V A v T0-220(P CSH5A.T) max V typ ne PLUS247 (X) TO-268(T) ISOPLUS247™(R) TO-247(H) T0-204(M) TO-264(K) SOT-227B(N) J0* TO-263(A) ► NetV LOW SATURATION VOLTAGE TYPES 600 1000 40 2.0 200 IXGH28N60D1
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O-268
ISOPLUS247TM
OT-227B
T0-220
PLUS247TM
O-263
O-247
T0-204
O-264
IXGA12N100U1
ixgr32n60cd1
IXGT-32N60BD1
IXGH32N60CD1
IXGH24N60CD1
IXGH17N100AU1
IXGK50N60BD1
IXGH24N60BD1
IXGH40N30BD
ixgh15n120cd1
IXGH32N60
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IXGN40N60
Abstract: IXGH24N60CD1 IXGR39N60BD1 ixgr32n60cd1
Text: Discrete IGBT with FAST Diodes WifaH High Speed Series VcES V *C<25 A VCE SAT) max V t* typ ns TO-220 (P) JP TO-263 (A) PLUS247 (X) TO-247 (H) ► Ne w TO-268 AA T0 -2 04 (T) (M) ♦ ra ^ ISOPLUS220 ISOPLUS247™(R) SOT-2^ TO-264 (K) PLUS264™ (B) LOW SATU RATION VOLTAGE TYPES
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ISOPLUS247TM
O-220
PLUS247TM
O-263
O-268
O-247
ISOPLUS220
O-264
PLUS264TM
IXGA12N100U1*
IXGN40N60
IXGH24N60CD1
IXGR39N60BD1
ixgr32n60cd1
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