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    IXTA240N055T Price and Stock

    IXYS Corporation IXTA240N055T

    MOSFET N-CH 55V 240A TO263
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    IXYS Corporation IXTA240N055T7

    MOSFET N-CH 55V 240A TO263-7
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    IXYS Integrated Circuits Division IXTA240N055T

    MOSFET DIS.240A 55V N-CH TO263(D2PAK) TRENCHMV SMT
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    Ozdisan Elektronik IXTA240N055T
    • 1 $2.65375
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    IXTA240N055T Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXTA240N055T IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 55V 240A TO-263 Original PDF
    IXTA240N055T7 IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 55V 240A TO-263-7 Original PDF

    IXTA240N055T Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    240N055T

    Abstract: IXTA240N055T7
    Text: Preliminary Technical Information TrenchMVTM Power MOSFET IXTA240N055T7 VDSS ID25 RDS on = 55 V = 240 A Ω ≤ 3.6 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings V DSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ


    Original     		PDF IXTA240N055T7 O-263 240N055T 11-16-06-B 240N055T IXTA240N055T7

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information TrenchMVTM Power MOSFET IXTA240N055T IXTP240N055T VDSS ID25 RDS on = 55 V = 240 A Ω ≤ 3.6 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings V DSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ


    Original     		PDF IXTA240N055T IXTP240N055T O-263 240N055T 11-16-06-B

    IXTA240N055T

    Abstract: IXTP240N055T 240N055T
    Text: Preliminary Technical Information IXTA240N055T IXTP240N055T TrenchMVTM Power MOSFET VDSS ID25 RDS on = 55 V = 240 A Ω ≤ 3.6 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings V DSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ


    Original     		PDF IXTA240N055T IXTP240N055T O-263 O-220) 240N055T 11-16-06-B IXTA240N055T IXTP240N055T 240N055T

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information TrenchMVTM Power MOSFET VDSS ID25 IXTA240N055T7 RDS on = 55 V = 240 A Ω ≤ 3.6 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings V DSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ


    Original     		PDF IXTA240N055T7 240N055T 11-16-06-B

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    1262-33

    Abstract: IXTP44N10T IXTH200N10T ixtp76n075 IXTA60N10T IXTQ130N10T IXTP98N075T IXTP130N10T IXTP240N055T IXTP64N055T
    Text: TrenchMV 55V-100V Power MOSFETs The ISOPLUS™ Advantage All IXYS ISOPLUS packages are manufactured with an internal direct-copper-bonded (DCB) isolated substrate, are UL certified and provide integral backside case isolation. These packages provide high isolation capability (up to 2500V), improve creepage distance and dramatically reduce total thermal resistance.


    Original     		PDF 5V-100V) O-247 PLUS220 ISOPLUS220TM PLUS220SMD O-252 O-220 O-263 1262-33 IXTP44N10T IXTH200N10T ixtp76n075 IXTA60N10T IXTQ130N10T IXTP98N075T IXTP130N10T IXTP240N055T IXTP64N055T