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    IXYA8N90C3D1 Price and Stock

    IXYS Corporation IXYA8N90C3D1

    IGBT 900V 20A 125W C3 TO-263AA
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    DigiKey IXYA8N90C3D1 Tube 300
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    Mouser Electronics IXYA8N90C3D1
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    Future Electronics IXYA8N90C3D1 Tube 44 Weeks 300
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    Bristol Electronics IXYA8N90C3D1 50
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    Quest Components IXYA8N90C3D1 40
    • 1 $6.552
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    TTI IXYA8N90C3D1 Tube 300
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    TME IXYA8N90C3D1 1
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    Littelfuse Inc IXYA8N90C3D1

    Disc Igbt Xpt-Genx3 To-263D2/ Tube |Littelfuse IXYA8N90C3D1
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    Newark IXYA8N90C3D1 Bulk 300
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    IXYA8N90C3D1 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXYA8N90C3D1 IXYS IGBTs - Single, Discrete Semiconductor Products, IGBT 900V 20A 125W C3 TO-263AA Original PDF

    IXYA8N90C3D1 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information 900V XPTTM IGBTs GenX3TM w/Diode VCES IC110 VCE sat tfi(typ) IXYA8N90C3D1 IXYP8N90C3D1 High-Speed IGBT for 20-50 kHz Switching = = ≤ = 900V 8A 2.5V 130ns TO-263 AA (IXYA) G Symbol Test Conditions Maximum Ratings VCES VCGR


    Original
    PDF IC110 IXYA8N90C3D1 IXYP8N90C3D1 130ns O-263 IF110 8N90C3

    Untitled

    Abstract: No abstract text available
    Text: IXYA8N90C3D1 IXYP8N90C3D1 900V XPTTM IGBTs GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 900V 8A 2.5V 130ns TO-263 AA (IXYA) G Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1MΩ


    Original
    PDF IXYA8N90C3D1 IXYP8N90C3D1 IC110 130ns O-263 IF110 8N90C3

    IXYA8N90C3D1

    Abstract: No abstract text available
    Text: Preliminary Technical Information IXYA8N90C3D1 IXYP8N90C3D1 900V XPTTM IGBTs GenX3TM w/Diode VCES IC110 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 900V 8A 2.5V 130ns TO-263 AA (IXYA) G Symbol Test Conditions Maximum Ratings VCES VCGR


    Original
    PDF IXYA8N90C3D1 IXYP8N90C3D1 IC110 130ns O-263 IF110 O-220AB 8N90C3