IRF1830G
Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23
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AO4405
AO4407
AO4408
AO4409
AO4410
AO4411
AO4413
AO4415
AO4422
AO4700
IRF1830G
IRF1830
transistor IRF1830G
APM2054N equivalent
apm2054n
AP85L02h
AP70N03S
2SK3683
ap70l02h
2SK2696
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IXAN0009
Abstract: 0009 ixan0009 2 ixan0009 3 TMS320F2407a GE SCR Manual mosfet inverter 2kW 100khz smps 1kW schematic diagram inverter 500w USING MOSFET schematic diagram PWM inverter 500w
Text: IXAN0009 HOW TO DRIVE MOSFETs AND IGBTs INTO THE 21ST CENTURY By Mr. Abhijit D. Pathak and Mr. Ralph E. Locher, IXYS Corporation Santa Clara, CA 95054 ABSTRACT As the industry pushes for higher power levels and higher switching frequencies, power supplies, which use MOSFETs/IGBTs for power
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IXAN0009
IXAN0009
0009
ixan0009 2
ixan0009 3
TMS320F2407a
GE SCR Manual
mosfet inverter 2kW 100khz
smps 1kW
schematic diagram inverter 500w USING MOSFET
schematic diagram PWM inverter 500w
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IXFX55N50F
Abstract: IXFK55N50F ixfn*55N50F 55N50F IXFN55N50F PLUS247
Text: Advance Technical Information IXFK55N50F IXFX55N50F HiPerRFTM Power MOSFETs VDSS ID25 = = 500V 55A Ω 85mΩ 250ns RDS on ≤ ≤ trr F-Class: MegaHertz Switching N-Channel Enhancement Mode Avalanche Rated Low Qg, Low Intrinsic Rg High dV/dt, Low trr TO-264 (IXFK)
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IXFK55N50F
IXFX55N50F
250ns
O-264
IXFX55N50F
IXFK55N50F
ixfn*55N50F
55N50F
IXFN55N50F
PLUS247
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information HiPerRFTM Power MOSFETs VDSS ID25 IXFK55N50F IXFX55N50F = = 500V 55A Ω 85mΩ 250ns RDS on ≤ ≤ trr F-Class: MegaHertz Switching N-Channel Enhancement Mode Avalanche Rated Low Qg, Low Intrinsic Rg High dV/dt, Low trr TO-264 (IXFK)
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IXFK55N50F
IXFX55N50F
250ns
O-264
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ixys ixfn 55n50
Abstract: 50n50 IXFK50N50 IXFN50N50 IXFK55N50 IXFN55N50
Text: HiPerFETTM Power MOSFET IXFN IXFN IXFK IXFK Single Die MOSFET 55N50 50N50 55N50 50N50 VDSS ID25 RDS on 500V 500V 500V 500V 55A 50A 55A 50A 80mΩ 100mΩ 80mΩ 100mΩ trr 250ns 250ns 250ns 250ns Preliminary data sheet Symbol Test Conditions TO-264 AA (IXFK)
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55N50
50N50
250ns
O-264
ixys ixfn 55n50
50n50
IXFK50N50
IXFN50N50
IXFK55N50
IXFN55N50
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ixys ixfn 55n50
Abstract: ixys ixfn55n50 IXFK50N50
Text: HiPerFETTM Power MOSFET IXFN 55N50 IXFN 50N50 IXFK 55N50 IXFK 50N50 Single MOSFET Die VDSS I D25 RDS on t rr 500V 500V 500V 500V 55A 80mW 250ns 50A 100mW 250ns 55A 80mW 250ns 50A 100mW 250ns Preliminary data sheet Symbol Test Conditions TO-264 AA (IXFK) Maximum Ratings
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55N50
50N50
50N50
250ns
100mW
ixys ixfn 55n50
ixys ixfn55n50
IXFK50N50
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55n50
Abstract: ixys ixfn 55n50 IXFK50N50
Text: HiPerFETTM Power MOSFET IXFN 55N50 IXFN 50N50 IXFK 55N50 IXFK 50N50 Single MOSFET Die VDSS I D25 RDS on t rr 500V 500V 500V 500V 55A 80mW 250ns 50A 100mW 250ns 55A 80mW 250ns 50A 100mW 250ns Preliminary data sheet Symbol Test Conditions TO-264 AA (IXFK) Maximum Ratings
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55N50
50N50
50N50
250ns
100mW
ixys ixfn 55n50
IXFK50N50
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Untitled
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFET IXFK 55N50 IXFX 55N50 IXFN 55N50 VDSS ID25 RDS on t rr Single Die MOSFET Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C 500 500 V V VGSS VGSM Continuous Transient ±20 ±30 V V ID25 IDM TC = 25°C
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55N50
PLUS247
O-264
IXFX55N50
IXFN55N50
125OC
IXFK55N50/IXFX55N50
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MD 202
Abstract: IXFX55N50 IXFK55N50 SOT-227B Outline IXFN55N50 55N50 "SOT-227 B" dimensions PLUS247 55n5
Text: IXFK 55N50 IXFX 55N50 IXFN 55N50 HiPerFETTM Power MOSFET VDSS ID25 RDS on t rr Single Die MOSFET Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C 500 500 V V VGSS VGSM Continuous Transient ±20 ±30 V V ID25 IDM TC = 25°C
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55N50
PLUS247
O-264
IXFX55N50
IXFN55N50
125OC
IXFK55N50/IXFX55N50
MD 202
IXFX55N50
IXFK55N50
SOT-227B Outline
IXFN55N50
55N50
"SOT-227 B" dimensions
55n5
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Untitled
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFET VDSS IXFE 55N50 IXFE 50N50 Single Die MOSFET ID25 RDS on Ω 90 mΩ Ω 100 mΩ 500 V 50 A 500 V 47 A trr ≤ 250 ns Preliminary data sheet ISOPLUS 227TM (IXFE) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C
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55N50
50N50
227TM
IXFN55N50
IXFE55N50:
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50n50
Abstract: IXFN55N50 IXFE50N50 IXFE55N50 55n50
Text: HiPerFETTM Power MOSFET VDSS IXFE 55N50 IXFE 50N50 Single Die MOSFET ID25 RDS on Ω 90 mΩ Ω 100 mΩ 500 V 50 A 500 V 47 A trr ≤ 250 ns Preliminary data sheet ISOPLUS 227TM (IXFE) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C
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55N50
50N50
227TM
IXFN55N50
IXFE55N50:
50n50
IXFE50N50
IXFE55N50
55n50
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50N50
Abstract: IXFE50N50 IXFE55N50 IXFN55N50
Text: HiPerFETTM Power MOSFET VDSS IXFE 55N50 IXFE 50N50 Single Die MOSFET ID25 RDS on Ω 80 mΩ Ω 100 mΩ 500 V 52 A 500 V 47 A trr ≤ 250 ns Preliminary data sheet ISOPLUS 227TM (IXFE) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C
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55N50
50N50
227TM
3000VSD
IXFN55N50
IXFE55N50:
50N50
IXFE50N50
IXFE55N50
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IXFK50N50
Abstract: IXYs M ixys ixfn 55n50 125OC 50N50 IXFK55N50 IXFN50N50 IXFN55N50 55n50
Text: HiPerFETTM Power MOSFET IXFN IXFN IXFK IXFK Single Die MOSFET 55N50 50N50 55N50 50N50 VDSS ID25 RDS on RMMs RMMs RMMs RMMs RR^ RM^ RR^ RM^ =UMãΩ NMMãΩ =UMãΩ NMMãΩ trr ORMåë ORMåë ORMåë ORMåë Preliminary data sheet Symbol Test Conditions
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55N50
50N50
O-264
125OC
IXFK50N50
IXYs M
ixys ixfn 55n50
125OC
50N50
IXFK55N50
IXFN50N50
IXFN55N50
55n50
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7N60B equivalent
Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches
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MS-013
10-Pin
5M-1994
MO-229
7N60B equivalent
18N50 equivalent
ixgh 1499
MOSFET smd 4407
IXDD 614
C 547 B W57 BJT transistor
r1275ns20l
R1271ns12C
IXYS CS 20-22 MOF1
IXTP 220N04T2
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schematic diagram atx Power supply 500w
Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455
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P462-ND
P463-ND
LNG295LFCP2U
LNG395MFTP5U
US2011)
schematic diagram atx Power supply 500w
pioneer PAL 012A
1000w inverter PURE SINE WAVE schematic diagram
600va numeric ups circuit diagrams
winbond bios 25064
TLE 9180 infineon
smsc MEC 1300 nu
TBE schematic diagram inverter 2000w
DK55
circuit diagram of luminous 600va UPS
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Untitled
Abstract: No abstract text available
Text: □ IXYS Preliminary Data Sheet V DSS HiPerFET Power MOSFET IXFN IXFN IXFK IXFK Single MOSFET Die 55N50 50N50 55N50 50N50 500V 500V 500V 500V D trr DS on ^D25 55A 50A 55A 50A 85m£2 100m£2 85m£2 100m£2 250ns 250ns 250ns 250ns TO-264 AA (IXFK) Symbol
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55N50
50N50
250ns
O-264
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IXTN79N20
Abstract: IXFN48N50 IXFN120N20 IXFN27N80 IXFN36N60 IXFN73N30 IXTN21N100 IXFN106N20 IXFN130N30 IXFN150N15
Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 CunoBbie TpaH3MCTopbi MOSFET b K o p n y c e SOT-227B (ISOTOP) $ M pM bi IXYS C # e p a npM M eH eH M a: n p e o 6 p a 3 0 B a ie n M D C-DC, n po M biw ne rn-ib ie MMnynbCHbie 6jiokm nMTaHMfl, cucTeM bi
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OT-227B
npe06pa30Baienm
flMana30H
ot-55Â
IXTN21N100
IXFN27N80
IXFN36N60
IXFN48N50
IXFN55N50
IXFN130N30
IXTN79N20
IXFN120N20
IXFN73N30
IXFN106N20
IXFN150N15
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IXFN40N50
Abstract: No abstract text available
Text: DIXYS IXFN 55N50 IXFN 50N50 IXFK 55N50 IXFK 50N50 Single MOSFET Die rr Test Conditions Maximum Ratings IXFK IXFN IXFN 50 55 50 IXFK 55 Td = 25°C to 150°C T j = 25°C to 150°C 500 500 500 500 V V VGS v GSM Continuous Transient ±20 ¿30 ±20 ±30 V V »D25
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IXFN55N50
IXFN50N50
IXFK55N50
IXFK50N50
O-264
OT-227
IXFK55N50
IXFN55N50
BffW80N50
IXFN40N50
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