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    Microchip Technology Inc JANTX2N1711

    Bipolar Transistors - BJT Power BJT
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    Mouser Electronics JANTX2N1711 90
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    Microchip Technology Inc JAN2N1711

    Bipolar Transistors - BJT Power BJT
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    Microchip Technology Inc Jantx2N1711S

    Bipolar Transistors - BJT Power BJT
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    Microchip Technology Inc Jan2N1711S

    Bipolar Transistors - BJT Power BJT
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    Microchip Technology Inc Jantxv2N1711S

    Bipolar Transistors - BJT Power BJT
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    J 2N1711 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    J 2N1711 Thomson-CSF Condensed Data Book 1977 Scan PDF
    J2N1711 Thomson-CSF Condensed Data Book 1977 Scan PDF
    J.2N1711 Thomson-CSF Condensed Data Book 1977 Scan PDF

    J 2N1711 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1N404 diode

    Abstract: ESM 740 TV flyback transformer tlf v633 diode transistor l335 TDa8170 TDA8172 equivalent TDA8170 equivalent orega flyback transformer ESM740
    Text: APPLICATION NOTE TEA2028 - TEA2029 By : J-M. MERVAL & B. D’HALLUIN SUMMARY Page TEA2028 I II GENERAL DESCRIPTION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . MAIN FUNCTIONS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original
    PDF TEA2028 TEA2029 TEA2028 TEA2028B) 1N404 diode ESM 740 TV flyback transformer tlf v633 diode transistor l335 TDa8170 TDA8172 equivalent TDA8170 equivalent orega flyback transformer ESM740

    b0345

    Abstract: B0815 to-53 TO53 2SC840 KT934V Matsua 2SC840 2S0288
    Text: POWER SILICON NPN Item Number Part Number I C 5 10 >= 20 2N1711B 2SC1419 2SC1419 2Nl085 2S0330 2S0331 BSS1S NSOS179 ~~g~~~oo 25 30 SK32SS 2S011S0Y 92GU45A 2S0288 2S0289 KT9340 KT934V B0827-10 ~~~~~~7 35 40 SML5512 SML5902 SML5907 SML5912 ST440 ST450 2S013


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    PDF B0373A 2NS705 92PE37A B0375-10 B037M O-12S b0345 B0815 to-53 TO53 2SC840 KT934V Matsua 2SC840 2S0288

    RCA SK CROSS-REFERENCE

    Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
    Text: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered


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    2N2147

    Abstract: 2N2075 2N2148 2N2160 2N1545 2N1924 2n2222 book TRANSISTOR 2N2222 2N2016 2N2219 transistor
    Text: DIGITRON ELECTRONIC CORP 3LE D • 2045^07 DOOOODM 0 ■ DGE ' 2 ^} ~ 0 \ Page #4 DIQITRON ELECTRONIC CORF 110 Hillside Avenue • Springfield, New Jersey 07081 • 201-379-9016 • 201-379-9019 F a x No. J O H N J. SCHWARTZ ENGINEERING D I G I T R O N E L E C T R O N I C S , CORP ,


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    PDF 2N1542A 2N1599 2N1671A 2N1811 2N2077A 2N2192B 2N1543 2N1606 2N1671B 2N1812 2N2147 2N2075 2N2148 2N2160 2N1545 2N1924 2n2222 book TRANSISTOR 2N2222 2N2016 2N2219 transistor

    2N2148

    Abstract: 2N2148 transistor 2N2147 2n2222 2N1545 2N2160 2N1906 transistor 2N2147 transistor 2n1906 2N1924
    Text: DIGITRON ELECTRONIC CORP 3LE D • 2045^07 DOOOODM 0 ■ DGE ' 2 ^} ~ 0 \ Page #4 DIQITRON ELECTRONIC CORF 110 Hillside Avenue • Springfield, New Jersey 07081 • 201-379-9016 • 201-379-9019 F a x No. J O H N J. SCHWARTZ ENGINEERING D I G I T R O N E L E C T R O N I C S , CORP ,


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    PDF 2N1542A 2N1599 2N1671A 2N1811 2N2077A 2N2192B 2N1543 2N1606 2N1671B 2N1812 2N2148 2N2148 transistor 2N2147 2n2222 2N1545 2N2160 2N1906 transistor 2N2147 transistor 2n1906 2N1924

    2n1574

    Abstract: 2n1983 2N2049 2N1117 TO-5 2n11 2N1572
    Text: CENTRAL SEMICONDUCTOR _1 9 8 9 9 6 3 CENTRAL SEMICONDUCTOR ti DE J n ñ n b 3 0 0 0 0 2 1 5 □ J f * 6 1 C 0 0 2 1 5 T >3 $ - ó ¡ NPN - METAL CAN - SWITCHING AND GENERAL PURPOSE Cont'd. *c VC E max mA V V — — — 300 10 10 . 10 150 20° 10


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    PDF 000021S 2n910 to-18 2n911 2n912 2n956- 2n1052 2n1053 2n1574 2n1983 2N2049 2N1117 TO-5 2n11 2N1572

    Untitled

    Abstract: No abstract text available
    Text: TYPES ¿Nfnifi ? n m . vNv.ii / f u m m m U i i , 2N1613, j n t j h N-P-N SILICON TRANSISTORS n z 1} B U L L E T IN NO. D L-S 693471, M A Y 1 9 6 3 - R E V I S E D A U G U S T 1969 Highly Reliable, Versatile Devices Designed for Amplifier, Switching and Oscillator Applications


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    PDF 2N1613, 2N717, 2N718, 2N718A, 2N730, 2N731, 2N956 2N696, 2N697, 2N1420,

    2n11

    Abstract: 2N1052 2N1053 2N1054 2N1055 2N1116 2N1117 2N1420 2N910 2N911
    Text: CENTRAL SEMICONDUCTOR _1 9 8 9 9 6 3 CENTRAL SEMICONDUCTOR ti DE J n ñ n b 3 0 0 0 0 2 1 5 □ J f * 6 1 C 0 0 2 1 5 T >3 $ - ó ¡ NPN - METAL CAN - SWITCHING AND GENERAL PURPOSE Cont'd. VCB VCE Veb V V V min hFE at *c VC E max mA V V 10 10 . 10


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    PDF 2N910 2N911 2N912 2N956- 2N1052 2N1053 2N1054 2N1055 CBR30 0000S23 2n11 2N1116 2N1117 2N1420

    1N5411

    Abstract: npn transistor RCA 467 CD4004T CA3051 CD4001D 40468A RCA 40822 40664 SCR rca 40583 2N5756
    Text: for HF-VHF-UHF-Microwave Applications RF Power Transistors R C A R F Power Transistors for 12.5 Volt Operation Hermetic Ceramic-Metal Stripline Package Flange TYPICAL OUTPUT POWER — WATTS 'j Hermetic Ceramic-Metal Coaxial Package (Large) Hermetic Ceramic-Metal


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    PDF CON-46 O-104 14-Lead 16-Lead 12-Lead 16-Lead O-220AB 1N5411 npn transistor RCA 467 CD4004T CA3051 CD4001D 40468A RCA 40822 40664 SCR rca 40583 2N5756

    2N2243

    Abstract: No abstract text available
    Text: DEVICE TYPF pa c k a g e ByCEO BVC80 BVEBO ICBO @ VCB IV i M- N i V l M>N . MN i •• A1 MAX JV» HFE @ VC & IC MIN MAR .V COB J v*. FT 2N1507 2N1566 2N16I3 2N1711 2N1889 NPN NPN NPN NPN NPN ro-5 ro-5 TO 5 ro- 5 TO-5 30 60 50 50 60 60 00 75 75 100 5 5 7


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    PDF BVC80 2N1507 2N1566 2N16I3 2N1711 2N1889 2NI890 2NI973 2N1974 2N1975 2N2243

    2N9308

    Abstract: 2N221BA 2N69S 2N3304 2M2193 2NI893 2N4080 2N236S 2N408 2N238
    Text: INTEX/ SEMITRôNICS CORP 27E D T-A 7 - 0 [ 4ñLTSMb 00DDS7Ì t J E m iE T D F l Sem itronics Corp. SEMICONDUCTORS metal can transistors silicon sm all signal transistors Msxinium Ratines Device 2N497 2N49B 2N65S 2H657 Type NPN NPN NPN NPN NPN- Package TO 5


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    PDF 00DDS7Ã T-A7-01 2N497 12/3S 30/S9 2N3725A 2N3947 2N4080 2N4137 2N4207 2N9308 2N221BA 2N69S 2N3304 2M2193 2NI893 2N236S 2N408 2N238

    CDIL BC141-16

    Abstract: BFX40 CDIL 2N2219a 2N3019 CDIL bfx64 h071 2N1613 2N1644 2N1837 2N1840
    Text: -39 : H DIM A B C D E F G H J K PIN CONFIGURATION 1. EMITTER 2. BASE 3. COLLECTOR L MEN 8,50 7,74 6,09 0,40 - 2,41 4,82 0,71 0,73 12,7 42 DEG . ' MAX 9,39 8,50 6,60 0,53 0,88 2,66 5,33 0,86 1,02 48 DEG ALL DIMENSIONS ARE IN M.M. TO-39 Metal-Can Package Transistors NPN


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    PDF 2N656 2N657 BFX40 BFX41 BFX87 CK100 CK150 CDIL BC141-16 CDIL 2N2219a 2N3019 CDIL bfx64 h071 2N1613 2N1644 2N1837 2N1840

    L5832

    Abstract: buz11 application note buz11 r5 STVHD90
    Text: r Z J S G S -T H O M ^ 7 # » S O N APPLICATION NOTE R B O M iillC T M lö E i DRIVE CIRCUIT FOR AN ELECTRIC FUEL CUT-OFF VALVE INTRODUCTION CIRCUIT DESCRIPTION The circuit described in this application note has been designed to drive the solenoid of an electric


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    PDF L5832 L5832. GU-1262 GU-1263 buz11 application note buz11 r5 STVHD90

    706a

    Abstract: 2n1890 N1711 250M T018 T072 2N1724A 699 NPN hirel
    Text: r SEMELAB LT]> 37E J> 6133167 □□□□□12 =] • SULB ■c 2C 2C “~2C S-2C * 2N 415 425 444 746 696 HI-REL HI-REL HI-REL HI-REL SCREEN NPN NPN NPN NPN NPN * * T077 T077 T077 T077 T039 35 75 35 50 60 0.03 0.1 0.05 0.1 0.2 lOOmin 35min 40min 35min 40min


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    PDF 35min 40min 5/10m 5/50m 75min 20min l/10m 706a 2n1890 N1711 250M T018 T072 2N1724A 699 NPN hirel

    2N1420

    Abstract: 2N956 2n161 2N1507 2N956 TEXAS INSTRUMENTS 2N731
    Text: TYPES 2N731, 2N956, 2N1420, 2N1S07, N-P-N SILICON TRANSISTORS ¿ U t » ' ? J . U n - B U L L E T IN NO. DL-S 6 9 3 4 7 1 , MAY 1 9 6 3 - R E V I S E D A U G U S T 1 9 6 9 Highly Reliable, Versatile Devices Designed for Amplifier, Switching and Oscillator Applications


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    PDF 2N731, 2N956, 2N1420, 2N1S07, 2N717, 2N718, 2N718A, 2N730, 2N956 2N1420 2n161 2N1507 2N956 TEXAS INSTRUMENTS 2N731

    Untitled

    Abstract: No abstract text available
    Text: SbE m J> cn7D57fl O O D b ' m NPN LOW LEVEL 4Tb • ZETB ~ \^ 2 T \ - £> | ZETEX SEMICONDUCTORS TABLE 1 - NPN SILICON PLANAR LOW LEVEL TRA N SISTO RS The devices show n in this table are low level transistors designed for small and medium signal, low and medium power amplification from D C to radio frequencies in Commercial, Industrial and Military


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    PDF n7D57fl

    2n2301

    Abstract: 2N4001 diode d880 2N3051 2N2B31 2N125 Ti D880 NPN 2N70j transistor d880 2N1815
    Text: . GENERAL DIODE CORP d T J 3 f l b T 72 0 Sb GD OOB D 4 ö | 7 - - 2-*? ~ D SILICON P L A N A R TRANSISTO RS — S M A L L SIG N A L VI TYPE 2N72» 2N727 2N8E9 2N869A 2N92S 300 •300 360 360 300 2N929A 2N930 2N930A 2N1S72 2N1573 NPN NPN NPN NPN NPN • 2N1S74


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    PDF 2N727 2N869A 2N929A 2N930' 2N930A 2N1572 2N1S73 2N1574 2N24S3 2N2484 2n2301 2N4001 diode d880 2N3051 2N2B31 2N125 Ti D880 NPN 2N70j transistor d880 2N1815

    2N1G13

    Abstract: 2N1B90 2N1972 2n1889
    Text: TO-39 MIN 8,50 DIM * a * B C S P * E F 7.74 6.09 0.40 - MAX 9,39 8,50 6.60 0,53 0 .U 2,68 5.33 2.41 4.82 o.ae 0.71 1,02 0.73 12,7 42 DEC 4« DEC G H J K L PIN CQNFICURAHON:1. EMITTER 2. BASE 3. COLLECTOR TO-39 Metal-Can Package Transistors NPN Electrical Cha ra cte ristics (Ta=25“C, U nle ss O therw ise Specified)


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    PDF 2N1644 2N1711 2N1837 2N1838 2N1840 2N1889 2N1B90 2N1507 2N1G13 2N1893 2N1G13 2N1972

    BF336

    Abstract: 2N1613 2N1907 2n2440 BC300-5
    Text: PIN C ON FIG UR ATIO N 1. EMITTER 2. BASE 3. C O LLE CTO R DIM MIN MAX A 8,50 9,39 B 7,74 8,50 C 6,09 6,60 D 0,40 0,53 E - 0,88 F 2.41 2,66 G 4,82 5,33 H 0,71 0,86 J 0,73 1,02 K 12,7 - L 42 DEG 48 DEG ALL D IM E N S IO N S ARE IN M.M. TO-39 Metal-Can Package Transistors NPN


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    PDF BSX63-6 BSX63-16 BSY54 CL100 CL150 BF336 2N1613 2N1907 2n2440 BC300-5

    102n3500

    Abstract: 2n2440 2n3502 2N699 bsx62-16 2N1613 2N1644 BFX2 2N1837 2N656
    Text: PIN C O N FIG U R A TIO N 1. EM ITTER 2. BASE 3. COLLECTOR DIM MIN M AX A 8,50 9,39 B 7,74 8,50 C 6,09 6,60 D 0,40 0,53 E - 0,88 F 2,41 2,66 G 4,82 5,33 H 0,71 0,86 J 0,73 1,02 K 12,7 - L 42 DEG 4 8 DEG ALL D IM E N SIO N S A RE IN M.M. TO-39 Metal-Can Package Transistors NPN


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    PDF 2N656 2N657 2N696 2N697 2N699 2N1507 BFX38 BFX40 BFX41 BFX87 102n3500 2n2440 2n3502 bsx62-16 2N1613 2N1644 BFX2 2N1837

    40314

    Abstract: 2N3055 40323 power inverter 140w dc to ac 2N2102 2N3879 2N4036 2N5320 2N5322 2N6178
    Text: HIGH-SPEED SWITCHING N-P-N & P-N-P POWER TYPES f T to 2 5 0 M H z . . . I r to 6 0 A . . . P r to 1 4 0 W i c • 1 A H IM . P f ■ 5 W m ax. T O -3 9 * le * - 1 A MX. P j « 7 W m ax . (T O -» ) • 30 x 30* 30x30 2N2102 (N-P-N] 2N4036 [P-N-P] 2N3053


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    PDF ITO-391 Pt-85-117 80-12SW 30x30 42x42 103x103 40314 2N3055 40323 power inverter 140w dc to ac 2N2102 2N3879 2N4036 2N5320 2N5322 2N6178

    2n3054

    Abstract: RCA transistor 40410 RCA 40310 2n2870 RCA 40636 transistor transistor 40410 ta7719 2n2338 2N2405 2N2147
    Text: jo is is u e jj. J 9 M O d .1 1 - <r*#► • 1 - t * « 1 I -tr 14 p i-er 2 1 his edition of the P o w e r T r a n s is to r D ir e c ­ to r y has been completely revised to reflect new An important change in this Directory is in the Index of Types which has been expanded to include


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    PDF edi358 TA7557 TA7611 TA7612 TA7639 TA7640 TA7719 TA7739 TA7740 TA7741 2n3054 RCA transistor 40410 RCA 40310 2n2870 RCA 40636 transistor transistor 40410 ta7719 2n2338 2N2405 2N2147

    2N1972

    Abstract: b774 2n1837 2N1838 2N1507 2N1644 2N1840 2N1986 2N1613 2N1975
    Text: TO-39 P IN C O N F IG U R A T IO N 1. E M IT T E R DIM MIN MAX A 8,50 9,39 B 7,74 8,50 C 6,09 6,60 D 0,40 0,53 E - 0,88 F 2,41 2,66 G 4,82 5,33 H 0,71 0,86 J 0 ,73 1,02 K 12,7 - L 42 D E G 48 D E G A L L D I M E N S I O N S A R E IN M .M . 2. B A S E 3. C O L L E C T O R


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    PDF 2N1507 2N2N1838 2N1840 2N1889 2N1890 2N1893 2N1972 2N1973 2N1974 2N1975 b774 2n1837 2N1838 2N1644 2N1986 2N1613

    pj 899

    Abstract: No abstract text available
    Text: T im es ? 2N1711* *also available a: JAN, JANTX, JANTXV SILICON SMALL-SIGNAL NPN TRANSISTORS NPN GENERAL PURPOSE TRANSISTOR HIGH FREQUENCY HIGH CURRENT GAIN @ 1 5 0 mA LOW SATURATION VOLTAGE TO-39 TO-205AD M A X IM U M R A T IN G S SY M BO L 2N 1711 U N IT S


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    PDF 2N1711* O-205AD 794-1BBB pj 899