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    J202 TRANSISTOR Search Results

    J202 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    J202 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    J202

    Abstract: J202 application note
    Text: MOTOROLA Order this document by J202/D SEMICONDUCTOR TECHNICAL DATA JFETs Low Frequency/ Low Noise J202 N–Channel — Depletion 1 DRAIN 3 GATE 2 SOURCE 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Drain – Source Voltage VDS 40 Vdc Drain – Gate Voltage


    Original     		PDF J202/D 226AA) J202 J202 application note

    transistor j201

    Abstract: MMBFJ202 MMBFJ201 F63TNR J201 J202 PN2222N CBVK741B019 j201 data J202 TRANSISTOR
    Text: G S G S TO-92 SOT-23 D NOTE: Source & Drain are interchangeable D Mark: 62P / 62Q J201 / J202 / MMBFJ201 / MMBFJ202 MMBFJ201 MMBFJ202 J201 J202 N-Channel General Purpose Amplifier This device is designed primarily for low level audio and general purpose applications with high impedance signal sources. Sourced


    Original     		PDF OT-23 MMBFJ201 MMBFJ202 MMBFJ201 transistor j201 MMBFJ202 F63TNR J201 J202 PN2222N CBVK741B019 j201 data J202 TRANSISTOR

    transistor j201

    Abstract: MMBFJ202 J201 j201 data J202 TRANSISTOR MMBFJ201 J201 equivalent CBVK741B019 F63TNR J202
    Text: G S G S TO-92 SOT-23 D NOTE: Source & Drain are interchangeable D Mark: 62P / 62Q J201 / J202 / MMBFJ201 / MMBFJ202 MMBFJ201 MMBFJ202 J201 J202 N-Channel General Purpose Amplifier This device is designed primarily for low level audio and general purpose applications with high impedance signal sources. Sourced


    Original     		PDF OT-23 MMBFJ201 MMBFJ202 MMBFJ201 transistor j201 MMBFJ202 J201 j201 data J202 TRANSISTOR J201 equivalent CBVK741B019 F63TNR J202

    2x20 lcd HD44780

    Abstract: R8 SMD display 2x20 lcd lcd 2x16 ht lcd 2X20 ea 8202 4X16 lcd module hd44780 lcd 2X20 8 pin P202-B3HNLED 8202-CNLED
    Text: DOTMATRIXDISPLAYS 2x20 01.2004 LCD DOTMATRIXDISPLAYS 2 Zeilen à 20 Zeichen Artikelbezeichnung Zeich. höhe EA J202-NLED 5.6 EA P202-BNLED 5.6 EA E202-NLW Modulmaße B H Sichtfenste Anschluß Rahmen Hinweise


    Original     		PDF J202-NLED P202-BNLED E202-NLW 017-7U P202-B2HNLED P202-B3HNLED 500mA 2x20 lcd HD44780 R8 SMD display 2x20 lcd lcd 2x16 ht lcd 2X20 ea 8202 4X16 lcd module hd44780 lcd 2X20 8 pin P202-B3HNLED 8202-CNLED

    J201 equivalent

    Abstract: transistor j201 transistor b54 J201 J202 equivalent SMPJ202 J202 TRANSISTOR and gate J202 NJ16
    Text: Databook.fxp 1/13/99 2:09 PM Page B-54 B-54 01/99 J201, J202 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ Audio Amplifiers ¥ General Purpose Amplifiers Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current


    Original     		PDF 226AA SMPJ201, SMPJ202 J201 equivalent transistor j201 transistor b54 J201 J202 equivalent SMPJ202 J202 TRANSISTOR and gate J202 NJ16

    BC237

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFETs Low Frequency/ Low Noise J202 N–Channel — Depletion 1 DRAIN 3 GATE 2 SOURCE 1 2 3 CASE 29–04, STYLE 5 TO–92 TO–226AA MAXIMUM RATINGS Rating Symbol Value Unit Drain – Source Voltage VDS 40 Vdc Drain – Gate Voltage


    Original     		PDF 226AA) MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 MV1644 BC237

    siliconix - j201

    Abstract: j201 jfet 2N4392 jfet cascade SST4119 2N4341 AN103 J112 J202 SST112
    Text: AN103 Siliconix The FET ConstantĆCurrent Source/Limiter Introduction The combination of low associated operating voltage and high output impedance makes the FET attractive as a constantĆcurrent source. An adjustableĆcurrent source Figure 1 may be built with a FET, a variable resistor,


    Original     		PDF AN103 SST112 2N4392 2N4393 SST/J113 2N4392, SST/J112 2N4393, SST/J113 siliconix - j201 j201 jfet 2N4392 jfet cascade SST4119 2N4341 AN103 J112 J202 SST112

    FET J202

    Abstract: transistor j201 high impedance current sources -rs 2N4393 j112 fet siliconix fet data book Transistor J304 Siliconix 2n Siliconix FET siliconix fet 2N4392
    Text: AN103 The FET Constant-Current Source/Limiter Introduction The combination of low associated operating voltage and high output impedance makes the FET attractive as a constant-current source. An adjustable-current source Figure 1 may be built with a FET, a variable resistor, and


    Original     		PDF AN103 PN4117A SST4117 2N4117A PN4118A SST4118 2N4118A PN4119A SST4119 2N4119A FET J202 transistor j201 high impedance current sources -rs 2N4393 j112 fet siliconix fet data book Transistor J304 Siliconix 2n Siliconix FET siliconix fet 2N4392

    FET J202

    Abstract: siliconix fet data book J113 equivalent CR180 datasheet j201 jfet J201 equivalent 2N4392 2N4393 J112 j112 fet
    Text: AN103 The FET Constant-Current Source/Limiter Introduction The combination of low associated operating voltage and high output impedance makes the FET attractive as a constant-current source. An adjustable-current source Figure 1 may be built with a FET, a variable resistor, and a


    Original     		PDF AN103 PN4117A SST4117 2N4117A PN4118A SST4118 2N4118A PN4119A SST4119 2N4119A FET J202 siliconix fet data book J113 equivalent CR180 datasheet j201 jfet J201 equivalent 2N4392 2N4393 J112 j112 fet

    2N4393

    Abstract: FET J202 siliconix fet j112 fet siliconix fet data book pn4117a transistor j201 FET J506 J112 jfet 2n4339
    Text: AN103 The FET Constant-Current Source/Limiter Introduction The combination of low associated operating voltage and high output impedance makes the FET attractive as a constant-current source. An adjustable-current source Figure 1 may be built with a FET, a variable resistor, and


    Original     		PDF AN103 PN4117A SST4117 2N4117A PN4118A SST4118 2N4118A PN4119A SST4119 2N4119A 2N4393 FET J202 siliconix fet j112 fet siliconix fet data book pn4117a transistor j201 FET J506 J112 jfet 2n4339

    Jamicon capacitor

    Abstract: SKR220M2AFBB 1206zC106K jamicon electrolytic capacitors jamicon ST-4EG-103 lvr03r 3 phase invertor schematic MC33297 TDK TSL0709
    Text: Freescale Semiconductor User’s Guide KIT33927EKEVBE Evaluation Board User’s Guide Freescale Semiconductor, Inc., 2007-2008. All rights reserved. KT33927UG Rev 2.0, 3/2008 Important Notice Important Notice Freescale provides the enclosed product s under the following conditions:


    Original     		PDF KIT33927EKEVBE KT33927UG Jamicon capacitor SKR220M2AFBB 1206zC106K jamicon electrolytic capacitors jamicon ST-4EG-103 lvr03r 3 phase invertor schematic MC33297 TDK TSL0709

    J200 mosfet

    Abstract: Jamicon capacitor jamicon np capacitor u101b Jamicon capacitor np jamicon MC33937A KIT33937AEKEVBE Jamicon 47uf miniature 2.1mm DC power jack connector
    Text: Freescale Semiconductor User’s Guide KT33937AUG Rev 1.0, 10/2009 KIT33937AEKEVBE Evaluation Board User’s Guide Freescale Semiconductor, Inc., 2009. All rights reserved. Important Notice Important Notice Freescale provides the enclosed product s under the following conditions:


    Original     		PDF KT33937AUG KIT33937AEKEVBE J200 mosfet Jamicon capacitor jamicon np capacitor u101b Jamicon capacitor np jamicon MC33937A Jamicon 47uf miniature 2.1mm DC power jack connector

    J555

    Abstract: 2SK17 2SK40 2SK105 E J231 transistor j556 2N4221 transistor j557
    Text: Databook.fxp 1/13/99 2:09 PM Page F-6 F-6 01/99 NJ16 Process Silicon Junction Field-Effect Transistor ¥ Low Current Switch ¥ General Purpose Amplifier ¥ High Breakdown Voltage G S-D Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj


    Original     		PDF 2N3954, 2N3955 2N3956 2N3957, 2N3958 2N4220, 2N4220A 2N4221, 2N4221A 2N4338, J555 2SK17 2SK40 2SK105 E J231 transistor j556 2N4221 transistor j557

    transistor 2N3563

    Abstract: 2n3819 cross reference 2SK30 2SA726 2sk41e 2SC1026 transistor 2sc1417 2Sa1026 2SC2259 BC150 transistor
    Text: Section 1 Cross Reference Guide . 1-3 Process Selection Guides Preferred Part Numbers by Process .


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by J202/D SEMICONDUCTOR TECHNICAL DATA JFETs Low Frequency/ Low Noise J202 N-Channel — Depletion 1 DRAIN MAXIMUM RATINGS Rating Symbol Value Unit Vdc Drain-Source Voltage Vd S 40 Drain-Gate Voltage Vd G 40 Vdc Gate-Source Voltage


    OCR Scan     		PDF J202/D -20Vdc)

    J202 equivalent

    Abstract: No abstract text available
    Text: FMMJ201 to FM M J204 SOT23 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTORS PARTMARKING DETAILS: FMMJ201 FM M J202 FM M J203 FM M J204 - P01 P02 PO3 P 04 ABSOLUTE MAXIMUM RATINGS at Tamb = 2 5°C -40V Gate Drain or Gate-Source Voltage Notes Continous Forward Gate Current


    OCR Scan     		PDF FMMJ201 J202 equivalent

    J203

    Abstract: J202 2N545
    Text: J202 J203 CASE 29-04, STYLE 5 TO-92 TO-226AA MAXIMUM RATINGS Symbol Value Unit Drain-Source Voltage Rating Vd S 40 Vdc D rain-G ate Voltage VDG 40 Vdc G ate-Source Voltage V GS 40 Vdc Gate C urrent 'G 50 mA Total Device D issipa tion (w T^ = 2haC Derate above 25°C


    OCR Scan     		PDF O-226AA) 2N5457 J203 J202 2N545

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JF E T s Low Frequency/ Low N o ise J202 N-Channel — Depletion 1 DRAIN > -£F^ GATE V / 2 SOURCE MAXIMUM RATINGS Rating D rain-S ource Voltage Symbol Value Vdc Vdc VDS 40 D ra in -G a te Voltage Vdg 40 G a te -S o u rce Voltage


    OCR Scan     		PDF 10nAdc)

    J203

    Abstract: No abstract text available
    Text: FMMJ201 to FM M J204 SOT23 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTORS P A R T M A R K IN G D E T A IL S : FM M J201 - POI FM M J202 - PO2 FM M J203 - PO3 F M M J204 - PO4 ABSOLUTE M A X IM U M RATINGS at Tamb = 2 5 °C Gate Drain or G ate-S ource V oltag e Notes


    OCR Scan     		PDF FMMJ201 DS168 J203

    Untitled

    Abstract: No abstract text available
    Text: B 54 9 -9 7 J 2 0 1 ,J 2 0 2 N -C H A N N E L SILICO N JUNCTION FIELD-EFFECT TRANSISTOR • AUDIO AM PLIFIERS • G EN ER A L PURPOSE AM PLIFIERS Absolute maximum ratings at Ta = 25°C Reverse Gate Source & Reverse Gate Drain Voltage - 40 V Continuous Forward Gate Current


    OCR Scan     		PDF T0-226AA

    2N4220 MOTOROLA

    Abstract: j201 J203 2N4220
    Text: M O T O R O L A SC XSTRS/R F !2E D | b3fc,72S4 Q0âb?13 1 | 1201 thru J203 CASE 29-04, STYLE 5 TO-92 TO-226AA M A X IM U M R A T IN G S Symbol Valus U nit Drain-Source Voltage Vos 40 Vdc Drain-Gate Voltage Vdg 40 Vdc Gate-Source Voltage Vg s 40 Vdc 50 mA


    OCR Scan     		PDF O-226AA) 2N4220 2N4220 MOTOROLA j201 J203

    transistor MWTA 06

    Abstract: transistor marking bh ra diode SS 3 marking WMM T460-8525 BH rn transistor nec 8525 transistor bh ra 2SJ202 2SK1580
    Text: 7 * — • S 5 /— H Mos M O S Field Effect Transistor 2 P 2 S J 202 ü ^ ' y f ' J M O S * m o s Ì ' ò £ ' ^ W g n t i « f F E T F E T % € J ± f ë € i t ë 2 {@ i m & T m m x - è , m W l? ~ ?<F> P 4 V T R : ì ' ' f 2 tb , è & g t t z > & %


    OCR Scan     		PDF 2SJ202 2SK1580 transistor MWTA 06 transistor marking bh ra diode SS 3 marking WMM T460-8525 BH rn transistor nec 8525 transistor bh ra 2SJ202 2SK1580

    U1898

    Abstract: No abstract text available
    Text: F8 9-97 Small Outline Surface Mount Package Devices N ^H A N N E rsÌLÌcO N T Ù N C T ÌO N T ÌE L D -E F F E C T TRANSISTORS Id s s V g s (O FF ) •g s s BVGSS Device Type Conditions Limits Min @IG Max @Vqs Min Max VDS M m (nA) (V) (V) (V) (V) Id (nA)


    OCR Scan     		PDF BF244C BF246A BF246B BF246C BF256A NJ132 NJ26L U1898

    00R3

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFETs Low Frequency/ Low Noise N-Channel — Depletion 1 DRAIN MAXIMUM RATINGS Rating Symbol Value Unit D rain-S ource Voltage VDS 40 Vdc D rain-G ate Voltage VDG 40 Vdc G ate-S ource Voltage vgs 40 Vdc 'g 50 mAdc Pd 310


    OCR Scan     		PDF