DRQ73-100-R
Abstract: No abstract text available
Text: Coiltronics RoHS Compliance Status - Standard Part Number List SERIES FAMILY PART NO EX. RoHS COMPLIANT *LEAD FREE CONVERSION DATE EFFECTIVE DATE CODE CCFL FL04 CTX210403-R Y Y Jan-04 01SW04, 01CB04 CCFL FL06 CTX110600-R Y Y Jan-04 01SW04, 01CB04 CCFL FL14
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CTX210403-R
Jan-04
01SW04,
01CB04
CTX110600-R
CTX410805-R
DRQ73-100-R
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Untitled
Abstract: No abstract text available
Text: BFR949F NPN Silicon RF Transistor Preliminary data For low noise, high-gain broadband amplifiers at 2 3 collector currents from 1 mA to 20 mA fT = 9 GHz 1 F = 1 dB at 1 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type
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BFR949F
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ua 722 fc
Abstract: BCR847BF MARKING rks BFR94
Text: BFR949F NPN Silicon RF Transistor Preliminary data For low noise, high-gain broadband amplifiers at 2 3 collector currents from 1 mA to 20 mA fT = 9 GHz 1 F = 1 dB at 1 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type
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BFR949F
ua 722 fc
BCR847BF
MARKING rks
BFR94
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NSVS1060
Abstract: 174MHZ
Text: *NSVS1060 Jan-04 JRC SAW FILTER NSVS1060 Application Electrical Specification: Table 1 The device characteristics are measured in the circuit shown in Fig.1. Table 1. Electrical Specifications Parameter Typ. Input and Output Impedance 50Ω Nominal Center Frequency (f0)
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NSVS1060
Jan-04
NSVS1060
174MHz
22MHz
199MHz
10dBm
174MHZ
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AT73C204
Abstract: 1248 camera 49-BALL ATMEL 436
Text: P OWER M ANAGEMENT AT73C204 POWER MANAGEMENT UNIT P RODUCTS FOR M ULTIMEDIA M ODULES Integrates in a single IC the power management circuitry required for multimedia handsets and PDAs. Image: Haz'art Studio l l l 7 independent linear voltage regulators optimized for supplies
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AT73C204
49-ball
AT73C204
130mA,
300mA
49-ball
49-pin
1248 camera
ATMEL 436
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OF TL084 OPAMP
Abstract: audio Amp. mosfet 1000 watt 3000 Watt BTL Audio Amplifier AUDIO AMPLIFIER 140 WATT MOSFET 24v 5 amp smps TDA2320A replacement DC MOTOR DRIVE WITH LM324 NE555 IGBT DRIVER TSM1001 lm336 sot23
Text: Standard linear portfolio From innovative devices to application specific products Package Flip chip DFN8 Mini SO8 SO8 S014/16 SO20 SO24 batwing SOT23-3/5 TO92 TQFP44/48 TSSOP8 TSSOP14/16 TSSOP28 Tape width mm Qty/reel (min.order qty) Lead-free available
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S014/16
OT23-3/5
TQFP44/48
TSSOP14/16
TSSOP28
Jan-04
SGSTDLINPO/1003
OF TL084 OPAMP
audio Amp. mosfet 1000 watt
3000 Watt BTL Audio Amplifier
AUDIO AMPLIFIER 140 WATT MOSFET
24v 5 amp smps
TDA2320A replacement
DC MOTOR DRIVE WITH LM324
NE555 IGBT DRIVER
TSM1001
lm336 sot23
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MARKING rks
Abstract: BFR949F transistor bf 186
Text: BFR949F NPN Silicon RF Transistor Preliminary data For low noise, high-gain broadband amplifiers at 2 3 collector currents from 1 mA to 20 mA fT = 9 GHz 1 F = 1 dB at 1 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type
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BFR949F
EHA07524
Jan-04-2002
MARKING rks
BFR949F
transistor bf 186
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NSVS1028
Abstract: No abstract text available
Text: *NSVS1028 Jan-04 JRC SAW FILTER NSVS1028 Application 627.330 MHz Data Communications Electrical Specification: Table 1 The device characteristics are measured in the circuit shown in Fig.1. Table 1. Electrical Specifications Item Nominal Center Frequency (f0)
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NSVS1028
Jan-04
NSVS1028
330MHz
424MHz
32deg/kHz
045ppm/
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NSVS1105
Abstract: No abstract text available
Text: NSVS1105 Jan-04 JRC SAW FILTER NSVS1105 Application 422.2MHz SAW FILTER Electrical Specification: Table 1 The device characteristics are measured in the circuit shown in Fig.1. Table 1. Electrical Specifications Item Spec. Input and Output Impedance 50Ω
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NSVS1105
Jan-04
NSVS1105
20dBm
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ENVS101
Abstract: No abstract text available
Text: *ENVS101 Jan-04 JRC SAW MODULE ENVS101 Application 622.0800MHz or 666.5143MHz SONET/SDH 155.5200MHz or 166.6286MHz Electrical Specification: (Table 1) Table 1. Electrical Specifications Item Supply Voltage(Vcc) Minimum 3.135 Typical 3.3 Maximum 3.465 Unit
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ENVS101
Jan-04
ENVS101
0800MHz
5143MHz
5200MHz
6286MHz)
08MHz)
12kHz
20MHz)
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NSVS1061
Abstract: No abstract text available
Text: *NSVS1061 Jan-04 JRC SAW FILTER NSVS1061 Application Electrical Specification: Table 1 The device characteristics are measured in the circuit shown in Fig.1. Table 1. Electrical Specifications Parameter Typ. Input and Output Impedance 50Ω Nominal Center Frequency (f0)
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NSVS1061
Jan-04
NSVS1061
174MHz
22MHz
100ns
157MHz
199MHz
10dBm
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Untitled
Abstract: No abstract text available
Text: A B C D E G F H REVISIONS REV DESCRIPTION, ECN, EAR NO. DATE APP'D A PRODUCT DRAWING EAR 14150 JAN07/13 KL 5.50 [.217] DEEP THREADED HOLES. SEE ORDERING CODE THREAD OPTION 1 1 4.50 .177 24.00 .945 2.50 .098 RUGGED 8 POSITION RECEPTACLE DATE CODE INK MARKING
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JAN07/13
MRJR-578
JAN04/13
P-MRJR-578X-X1
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180-nm CMOS standard cell library inverter
Abstract: 130 nm CMOS standard cell library 45-nm CMOS standard cell library process technology 45 nm library CS200A 130nm 130-nm CMOS standard cell library inverter S/130 nm CMOS standard cell library SEM 2006 CS201
Text: Fujitsu @ 65nm: Providing Solutions through Integrated Design Services The Fujitsu Advantage…Not Just a Foundry Contents Benefits of leading-edge technology at 65nm Challenges Solutions Fujitsu Microelectronics America, Inc. 2 FSA Semiconductor Forum, June 14, 2006
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130nm
180-nm CMOS standard cell library inverter
130 nm CMOS standard cell library
45-nm CMOS standard cell library process technology
45 nm library
CS200A
130-nm CMOS standard cell library inverter
S/130 nm CMOS standard cell library
SEM 2006
CS201
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HVQFN20
Abstract: BGD502 BGR269 BGS67A BGY585A BGY587 BGY587B BGY588N BGY66B BGY67
Text: Semiconductors Product Portfolio RF Access Systems CATV RF Hybrid Amplifiers * Type Number Reverse Hybrids BGS67A BGY68 BGY66B BGY67 BGY67A BGR269 40 - 550MHz Push-Pulls BGY585A BGY587 BGY587B BGY588N 40 - 550 MHz Power Doubler BGD502 40 - 600MHz Push-Pulls
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BGS67A
BGY68
BGY66B
BGY67
BGY67A
BGR269
550MHz
BGY585A
BGY587
BGY587B
HVQFN20
BGD502
BGR269
BGS67A
BGY585A
BGY587
BGY587B
BGY588N
BGY66B
BGY67
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jrc 319
Abstract: NSVS1103
Text: NSVS1103 Jan-04 JRC SAW FILTER NSVS1103 Application 314.35MHz SAW FILTER Electrical Specification: Table 1 The device characteristics are measured in the circuit shown in Fig.1. Table 1. Electrical Specifications Item Spec. Input and Output Impedance 50Ω
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NSVS1103
Jan-04
NSVS1103
35MHz
35MHz
85MHz
jrc 319
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Untitled
Abstract: No abstract text available
Text: 3 6 THIS DR A WI N G COPYRI GHT IS UNPUBL IS HED. 19 RELEASED BY AMP INCORPORATED. ALL F OR P U B L I C A T I O N RIGHTS D LOC DIST REVISIONS RESERVED. LTR DESCRIPTION RELEASE -1 REV 0520-0237-05 PER THRU -12 DA T E DWN A PV D 2 1 JAN04 T5 JH 18FEB05 T5
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18FEB05
JAN04
JUN97
/home/usQl5872/edmmod
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Untitled
Abstract: No abstract text available
Text: TH I S D R A WI N G IS UNPUBLISHED. C O P YR I G HT 2 0 0 4 RELEASED BY TYCO ELECTRONICS CORPORATION F OR ALL 2004 PUBLICATION R I GHTS LOC R E V I S I ONS D I ST RESERVED. LTR DE S C R I P T I O N m RELEASED ADD - 2 REVISED 01 DWN DATE FJAO-0067-04 APVD
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FJAO-0067-04
JAN04
22SEP05
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Untitled
Abstract: No abstract text available
Text: z DRAWING THIS MADE IN DRAWING THIRD IS ANGLE UNRUBLI S H E D , COPYRIGHT 6 5 2 3 4 PROJECTION 19 RELEASED BY AMP F OR LOC PUBLICATION INCORPORATED. ALL INTERNATIONAL RIGHTS D I ST REV I 5 I 0 N 5 DF RESERVED. ZONE LTR D E S C R I P T I ON G REV PER DATE
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ASTN-B-36
-D-416,
JAN-04
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Untitled
Abstract: No abstract text available
Text: 3 THIS DR A WI N G C IS COPYRI GHT UNPUBL IS HE D. RELEASED BY AMP 19 INCORPORATED. F OR P U B L I C A T I O N ALL RIGHTS J 9 REVISIONS R ES ERVED. DF DESCRIPTION REV PER 0G30- DWN -03 -04 A PV D DE D D SOCKET MAT ' L : C O P P E R F I N I S H : GOLD OVE R N I C K E L
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0G30-
O23/98
-JAN-04
JUN97
usO16412
/home/usOI6412/docmod
00TT9
8S8890-5
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1210301
Abstract: bbc scr 78
Text: /h o m e /u s 0 1 6 9 2 6 /D M T E C m o d DRAWI NG MADE I N T H I R D ANGDE P R O J E C T I O N RARO NNNBER 5 I R55 U55D R5V M AC H IN E 466502 -1 N 834400-1 466502 - 2 6 583435-3 466502 - 3 — 466502 - 4 ii 466502 - 5 6 5-466502 -5 G 555 T5RMINAM N A M 5 :
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BBB435-B
/home/us016926/DMTECmod
4F863F-1
I2-0CT-05
us016326
00TS3
1210301
bbc scr 78
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PDF
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Untitled
Abstract: No abstract text available
Text: E S T E P L A N O E S UN D O C U M E N T O C O N T R O L A D O DE A M P I N C O R P O R A T E D Y PUEDE SER M O D I F I C A D O . PARA LA U L T I M A R E V I S I O N . C O N T A C T A R C O N L A O R G A N I Z A C I O N DE C O N T R O L D E I N G E N I E R I A .
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I02-00
24JAN
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DIN 16901
Abstract: DIN 16901 140 DIN ISO 286 EGOO-1202-98 AMPMODU 560 K SMD ISO 8015 smd cm SMD p05
Text: THIS DRAWING IS UNPI RELEASED FOR PUBLICATION fru f f l y ^ jP m iV K m . BY AMP INCORPORATED. ALLE RECHTE VORBEHALTEN J UbXo a COPYRIGHT 1997 ï ,19-. I HATED WITH. JPASSEND ZU, LOC DI5T REVISIONS P A I PROJEKT NR.« E98-52560 tn o VIEW Y -H in ► D O T
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E98-52560
29-SEP-98
10-N0V-98
I5-SEP-99
27/im
I3-FEB-04
DIN 16901
DIN 16901 140
DIN ISO 286
EGOO-1202-98
AMPMODU
560 K SMD
ISO 8015
smd cm
SMD p05
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Untitled
Abstract: No abstract text available
Text: 3 6 T H I S DRAWI NG C OPYRI GHT I S UNP UB L I S HE D. 19 R E L E A S E D FOR P U B L I C A T I O N BY AMP INCORPORATED. LOC DIST REVISIONS A L L R I GH T S R ES ERVED. LTR DESCRIPTION RELEASE -1 REV 0520-0726-04 PER THRU -12 DATE DWN APVD JAN04 TS JH
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14JUN04
19JAN04
INCHE51
/home/usOI5872/edmmod
00T79
JUN97
-JAN-04
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espec
Abstract: No abstract text available
Text: E S T E P L A N O E S UN D O C U M E N T O C O N T R O L A D O DE A M P I N C O R P O R A T E D Y PUEDE SER M O D I F I C A D O . PARA LA U L T I M A R E V I S I O N , C O N T A C T A R C ON L A O R G A N I Z A C I O N DE C O N T R O L DE I N G E N I E R I A .
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JAN04
29SEP97
espec
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