Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    JANSR2N7406 Search Results

    JANSR2N7406 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    JANSR2N7406 Fairchild Semiconductor 24A, 200V, 0.110 ?, Rad Hard, N-Channel Power MOSFET Original PDF
    JANSR2N7406 Intersil 24A, 200V, 0.110 ?, Rad Hard, N-Channel Power MOSFET (Formerly FSF250R4) Original PDF

    JANSR2N7406 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: JANSR2N7406 S E M I C O N D U C T O R September 1997 Formerly Available As FSF250R4 Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs Features Description • 24A, 200V, rDS ON = 0.110Ω The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs


    Original
    PDF JANSR2N7406 1-800-4-HARRIS

    1E14

    Abstract: 2E12 FSF250R4 JANSR2N7406 Rad Hard in Fairchild for MOSFET
    Text: JANSR2N7406 Formerly FSF250R4 24A, 200V, 0.110 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Title ANS N74 bt A, 0V, 10 m, d rd, anwer OST utho eyrds errpoon, minctor, A, 0V, 10 m, d rd, Features Description • 24A, 200V, rDS(ON) = 0.110Ω The Discrete Products Operation of Intersil Corporation has


    Original
    PDF JANSR2N7406 FSF250R4 1E14 2E12 FSF250R4 JANSR2N7406 Rad Hard in Fairchild for MOSFET

    Untitled

    Abstract: No abstract text available
    Text: JANSR2N7406 Formerly FSF250R4 24A, 200V, 0.110 Ohm, Rad Hard, N-Channel Power MOSFET January 2002 Features Description • 24A, 200V, rDS ON = 0.110Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs


    Original
    PDF JANSR2N7406 FSF250R4

    1E14

    Abstract: 2E12 FSF250R4 JANSR2N7406
    Text: JANSR2N7406 Formerly FSF250R4 24A, 200V, 0.110 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Features Description • 24A, 200V, rDS ON = 0.110Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event


    Original
    PDF JANSR2N7406 FSF250R4 1E14 2E12 FSF250R4 JANSR2N7406

    Rad hard MOSFETS in Harris

    Abstract: No abstract text available
    Text: JANSR2N7406 S W A« Formerly FSF250R4 24A, 200V, 0.110 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Features Description • 24A, 200V, Td s ON) = 0.110£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs


    OCR Scan
    PDF FSF250R4 JANSR2N7406 MIL-STD-750, MIL-S-19500, 100ms; 500ms; Rad hard MOSFETS in Harris

    500V 25A Mosfet

    Abstract: Power MOSFET Selection Guide MOSFET 500V 15A n-channel 250V power mosfet 500v 2A mosfet p-channel 250V power mosfet 200v 5A mosfet rad hard Power Mosfet P-channel mosfet 500V
    Text: RAD HARD MOSFET& JANS RAD HARD MOSFETs PAGE JANS Rad Hard Power MOSFET Selection Guide. 2-2 Rad Hard Data Packages - Harris Power Transistors.


    OCR Scan
    PDF JANSR2N7272 JANSR2N7275 JANSR2N7278 JANSR2N7292 JANSR2N7294 JANSR2N7395 JANSR2N7396 JANSR2N7397 JANSR2N7398 JANSR2N7399 500V 25A Mosfet Power MOSFET Selection Guide MOSFET 500V 15A n-channel 250V power mosfet 500v 2A mosfet p-channel 250V power mosfet 200v 5A mosfet rad hard Power Mosfet P-channel mosfet 500V