JEDEC TO-3 METAL CASE Search Results

JEDEC TO-3 METAL CASE Result Highlights (5)

Part	Manufacturer	Description
TPHR7404PU	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H
TCK424G	Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G
TCK425G	Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G
TCK423G	Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G
TCK422G	Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G

JEDEC TO-3 METAL CASE Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
2N3771 Abstract: 2N3772 transistor 2n3772 Text: 2N3771 2N3772 HIGH POWER NPN SILICON TRANSISTOR • STMicroelectronics PREFERRED SALESTYPES DESCRIPTION The 2N3771, 2N3772 are silicon epitaxial-base NPN transistors mounted in Jedec Jedec TO-3 metal case. They are intended for linear amplifiers and inductive switching applications.	Original	2N3771 2N3772 2N3771, 2N3772 2N3771/2N3772 P003F 2N3771 transistor 2n3772	PDF
2N3771 Abstract: 2N3772 2N3771 power circuit 2N3772 APPLICATIONS Text: 2N3771 2N3772 HIGH POWER NPN SILICON TRANSISTOR • STMicroelectronics PREFERRED SALESTYPES DESCRIPTION The 2N3771, 2N3772 are silicon epitaxial-base NPN transistors mounted in Jedec Jedec TO-3 metal case. They are intended for linear amplifiers and inductive switching applications.	Original	2N3771 2N3772 2N3771, 2N3772 2N3771 2N3771 power circuit 2N3772 APPLICATIONS	PDF
2N3772 Abstract: 2N3771 2N3772 APPLICATIONS 2N3771 canada 20A40 Text: 2N3771 2N3772 HIGH POWER NPN SILICON TRANSISTOR • SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The 2N3771, 2N3772 are silicon epitaxial-base NPN transistors mounted in Jedec Jedec TO-3 metal case. They are intended for linear amplifiers and inductive switching applications.	Original	2N3771 2N3772 2N3771, 2N3772 2N3771 2N3772 APPLICATIONS 2N3771 canada 20A40	PDF
2N3771 Abstract: 2N3772 P003N Text: 2N3771 2N3772 HIGH POWER NPN SILICON TRANSISTOR n SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The 2N3771, 2N3772 are silicon epitaxial-base NPN transistors mounted in Jedec Jedec TO-3 metal case. They are intended for linear amplifiers and inductive switching applications.	Original	2N3771 2N3772 2N3771, 2N3772 2N3771 P003N	PDF
MJ1000 Abstract: MJ900 MJ901 mj1001 ic 901 adc 515 Comset Text: COMSET SEMICONDUCTORS MJ900/901/1000/1001 COMPLEMENTARY POWER DARLINGTONS TO-3 The MJ900, MJ901, MJ1000 and MJ1001 are silicon epitaxial-bas transistors in monolithic Darlington configuration, and are mounted in JEDEC TO-3 metal case. They are intended for use in power linear and	Original	MJ900/901/1000/1001 MJ900, MJ901, MJ1000 MJ1001 MJ900 MJ900 MJ901 ic 901 adc 515 Comset	PDF
BUX80 Abstract: P003N transistor b 1185 Text: BUX80 SILICON NPN SWITCHING TRANSISTOR n SGS-THOMSON PREFERRED SALESTYPE DESCRIPTION The BUX80 is a silicon multiepitaxial mesa NPN transistor in Jedec TO-3 metal case, particularly intended for converters, inverters, switching regulators and motors control	Original	BUX80 BUX80 P003N transistor b 1185	PDF
508df Abstract: BU508D schematic diagram sgs 508d 508D bu208d datasheet TO-218AC Package transistor BU508D ATT218 BU208D BU508D Text: BU208D/508D/508DFI HIGH VOLTAGE FASTSWITCHING NPN POWER TRANSISTOR • ■ ■ ■ ■ SGS-THOMSON PREFERRED SALESTYPES HIGH VOLTAGE CAPABILITY U.L. RECOGNISED ISOWATT218 PACKAGE U.L. FILE # E81734 (N JEDEC TO-3 METAL CASE NPN TRANSISTOR WITH INTEGRATED	Original	BU208D/508D/508DFI ISOWATT218 E81734 BU208D, BU508D BU508DFI O-218 ISOWATT218 508df BU508D schematic diagram sgs 508d 508D bu208d datasheet TO-218AC Package transistor BU508D ATT218 BU208D	PDF
508df Abstract: 508DFI sgs 508d 508d BU208D ATT218 BU508D BU508DFI P003N T218 Text: BU208D/508D/508DFI HIGH VOLTAGE FASTSWITCHING NPN POWER TRANSISTOR • ■ ■ ■ ■ SGS-THOMSON PREFERRED SALESTYPES HIGH VOLTAGE CAPABILITY U.L. RECOGNISED ISOWATT218 PACKAGE U.L. FILE # E81734 (N JEDEC TO-3 METAL CASE NPN TRANSISTOR WITH INTEGRATED	Original	BU208D/508D/508DFI ISOWATT218 E81734 BU208D, BU508D BU508DFI O-218 ISOWATT218 508df 508DFI sgs 508d 508d BU208D ATT218 P003N T218	PDF
MJ802 Abstract: I/Audio Power Amplifier mj802 Text: MJ802 SILICON NPN POWER TRANSISTOR • STMicroelectronics PREFERRED SALESTYPE DESCRIPTION The MJ802 is a silicon Epitaxial-Base power transistor mounted in Jedec TO-3 metal case. It is intended for general purpose power amplifier and switching applications.	Original	MJ802 MJ802 I/Audio Power Amplifier mj802	PDF
BUX98A Abstract: BUX98 P003N BUX98B BUX98-BUX98A Text: BUX98 BUX98A SILICON NPN SWITCHING TRANSISTOR n SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The BUX98, and BUX98A are silicon multiepitaxial mesa NPN transistor in jedec TO-3 metal case, intended and industrial applications from single and three-phase mains operation.	Original	BUX98 BUX98A BUX98, BUX98A BUX98 P003N BUX98B BUX98-BUX98A	PDF
transistor 892 Abstract: 2N5038 OC-90 Text: 2N5038 HIGH CURRENT NPN SILICON TRANSISTOR • ■ STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR DESCRIPTION The 2N5038 is a silicon planar multiepitaxial NPN transistors in Jedec TO-3 metal case. They are especially intended for high current and switching	Original	2N5038 2N5038 transistor 892 OC-90	PDF
2N3055 Abstract: 2n3055 pin Text: COMSET SEMICONDUCTORS 2N3055 POWER LINEAR AND SWITCHING APPLICATIONS The 2N3055 is a silicon epitaxial-base NPN transistor in JEDEC TO-3 metal case. It is intended for power switching circuits, series and shunt regulators, output stages and high fidelity amplifiers.	Original	2N3055 2n3055 pin	PDF
2n3055 Abstract: 2n3055 pin 2N3055 power circuit Text: 2N3055 POWER LINEAR AND SWITCHING APPLICATIONS The 2N3055 is a silicon epitaxial-base NPN transistor in JEDEC TO-3 metal case. It is intended for power switching circuits, series and shunt regulators, output stages and high fidelity amplifiers. ABSOLUTE MAXIMUM RATINGS	Original	2N3055 2N3055 2n3055 pin 2N3055 power circuit	PDF
2N3055 Abstract: 2n3055 voltage regulator 2N3055 series voltage regulator 2n3055 application note 2N3055 power circuit 2n3055 pin 2n3055 amplifier 2N3055 NPN Transistor 2N3055 power amplifier circuit 2N3055 TO-3 Text: 2N3055 POWER LINEAR AND SWITCHING APPLICATIONS The 2N3055 is a silicon epitaxial-base NPN transistor in JEDEC TO-3 metal case. It is intended for power switching circuits, series and shunt regulators, output stages and high fidelity amplifiers. ABSOLUTE MAXIMUM RATINGS	Original	2N3055 2N3055 200/b 2n3055 voltage regulator 2N3055 series voltage regulator 2n3055 application note 2N3055 power circuit 2n3055 pin 2n3055 amplifier 2N3055 NPN Transistor 2N3055 power amplifier circuit 2N3055 TO-3	PDF

BSY95A Abstract: BSY95 Text: BSY95A NPN Silicon Epitaxial Planar Transistor for general purpose switching applications max.0.50 Metal case JEDEC TO-18 18 A 3 according to DIN 41 876 Collector connected to case Weight approximately 0.35 g Dimensions in mm Absolute Maximum Ratings Symbol	OCR Scan	BSY95A 100mA 100mA BSY95A BSY95	PDF
BUX43 Abstract: No abstract text available Text: SGS-THOMSON IMIBCB lllLieTB©C80e8 S G S - T HO MS ON BUX43 30E D HIGH VOLTAGE POWER SWITCH DESCRIPTION The BUX43 is a silicon multiepitaxiai mesa NPN transistor in Jedec TO-3 metal case, intented for high voltage, fast switching applications. TO -3 ABSOLUTE MAXIMUM RATINGS	OCR Scan	C80e8 BUX43 BUX43	PDF
2N2222 circuit Abstract: 2N2222 npn 2N2222 2n2222 test circuit 2N2222 base capacitance Text: 2N2222 NPN Silicon Epitaxial Planar Transistor with high cutoff frequency, for high speed switching mox.0.5^ Metal case JEDEC TO-18 18 A 3 according to DIN 41876 Collector connected to case Weight approximately 0.35 g Dimensions in mm Absolute Maximum Ratings	OCR Scan	2N2222 2N2222 circuit 2N2222 npn 2N2222 2n2222 test circuit 2N2222 base capacitance	PDF
2N2222A Abstract: J 2N2222A Transistor 2N2222A 2N2222A npn transistor 2N2221A 2N2221A-2N2222A BR 2N2222A NPN 2N222 2n2222a transistor Metal 2n2222a Text: 2N2221A, 2N2222A NPN Silicon Epitaxial Planar Transistors with high cutoff frequency, for high speed switching mox.0.50 Metal case JEDEC TO-18 18 A 3 according to DIN 41876 Collector connected to case Weight approximately 0.35 g Dimensions in mm Absolute Maximum Ratings	OCR Scan	2N2221A, 2N2222A 2N2222A 2N2221A J 2N2222A Transistor 2N2222A 2N2222A npn transistor 2N2221A-2N2222A BR 2N2222A NPN 2N222 2n2222a transistor Metal 2n2222a	PDF
2N2907A Abstract: 2N2906A Text: 2N2906A, 2N2907A PNP Silicon Epitaxial Planar Transistors with high cutoff frequency, for high speed switching Metal case JEDEC TO-18 18 A 3 according to DIN 41 876 Collector connected to case Weight approximately 0.35 g Dimensions in mm Absolute Maximum Ratings	OCR Scan	2N2906A, 2N2907A 2N2907A 2N2906A	PDF
Untitled Abstract: No abstract text available Text: .152^237 ooaTabi a • " IT - 3 3 - 1 3 SCS-THOMSON RfflDOœHLIÛTri^OKlDOi S G S-THOMSON 2N5875-2N5876 2N5877-2N5878 3DE D SILICON HIGH POWER TRANSISTORS D ESCRIPTIO N The 2N5877 and 2N5878 are silicon epitaxial-base NPN power transistors in Jedec TO-3 metal case.	OCR Scan	2N5875-2N5876 2N5877-2N5878 2N5877 2N5878 2N5875 2N5876 hFE-10 2N5875/6/7/8	PDF
BCY70 Abstract: BCY72 BCY71 BGY71 transistor bcy70 BCY71A Text: BCY70 . . . BCY72 PNP Silicon Epitaxial Planar T ransistors for industrial switching and amplifier applications The BCY71 and BCY71A feature low noise figures. max .0.50 Metal case JEDEC TO-18 18 A 3 according to DIN 41 876 Collector connected to case Weight approximately 0.35 g	OCR Scan	BCY70 BCY72 BCY71 BCY71A BCY70 BCY71, BCY72 BGY71 transistor bcy70	PDF
BC260 Abstract: No abstract text available Text: BC260 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications The transistor is subdivided into three groups A, B and C according to its DC current gain. m ax .0.5 $ Metal case JEDEC TO-18 18 A 3 according to DIN 41876 Collector connected to case	OCR Scan	BC260 BC260	PDF
mj4502 Abstract: MJ802 Text: SGS-THOMSON [MOigœilLiera *® MJ802 MJ4502 COMPLEMENTARY SILICON HIGH POWER TRANSISTORS . SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The MJ802 NPN and MJ4502 (PNP) are silicon epitaxial-base complementary power transistor in Jedec TO-3 metal case, intended for general	OCR Scan	MJ802 MJ4502 MJ802/MJ4502 P003N mj4502 MJ802	PDF
mj2955 Abstract: No abstract text available Text: 2N3055 MJ2955 COMPLEMENTARY SILICON POWER TRANSISTORS • STMicroelectronics PREFERRED SALESTYPES . COMPLEMENTARY NPN-PNP DEVICES DESCRIPTION The 2N3055 is a silicon Epitaxial-Base Planar NPN transistor mounted in Jedec TO-3 metal case. It is intended for power switching circuits, series	OCR Scan	2N3055 MJ2955 2N3055 MJ2955. SC08820 SC08830 P003F mj2955	PDF

JEDEC TO-3 METAL CASE Search Results

JEDEC TO-3 METAL CASE Result Highlights (5)

JEDEC TO-3 METAL CASE Datasheets Context Search

2N3771

2N3771

2N3772

2N3771

MJ1000

BUX80

508df

508df

MJ802

BUX98A

transistor 892

2N3055

2n3055

2N3055

BSY95A

BUX43

2N2222 circuit

2N2222A

2N2907A

Untitled

BCY70

BC260

mj4502

mj2955