JS SOT23-3
Abstract: sot23 marking JR BAS20LT1 BAS21 BAS21DW5T1 BAS21LT1 BAS19 BAS19LT1 BAS20 MARKING JS sot-23
Text: BAS19LT1, BAS20LT1, BAS21LT1, BAS21DW5T1 Preferred Devices High Voltage Switching Diode Device Marking: • BAS19LT1 = JP • BAS20LT1 = JR • BAS21LT1 = JS • BAS21DW5T1 = JS http://onsemi.com HIGH VOLTAGE SWITCHING DIODE SOT-23 3 CATHODE 1 ANODE SC-88A
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BAS19LT1,
BAS20LT1,
BAS21LT1,
BAS21DW5T1
BAS19LT1
BAS20LT1
BAS21LT1
OT-23
SC-88A
JS SOT23-3
sot23 marking JR
BAS20LT1
BAS21
BAS21DW5T1
BAS21LT1
BAS19
BAS19LT1
BAS20
MARKING JS sot-23
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. HIGH VOLTAGE SWITCHING DIODE LBAS21HT1G 1 • Device Marking: JS 1 CATHODE • 2 ANODE 2 CASE 477, STYLE 1 SOD– 323 Pb-Free Package is Available. Ordering Information MARKING DIAGRAM Device Marking Shipping LBAS21HT1G JS 3000/Tape&Reel
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LBAS21HT1G
3000/Tape
LBAS21HT3G
10000/Tape
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Diodes BAS21/A/C/SLT1 SOT—23 SWITCHING DIODE FEATURES BAS21LT1 Marking: JS BAS21ALT1 Marking: JS2 Reverse breakdown voltage Reverse voltage Forward Diode leakage current voltage
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OT-23
BAS21/A/C/SLT1
BAS21LT1
BAS21ALT1
BAS21CLT1
037TPY
950TPY
550REF
022REF
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. High Voltage Switching Diode LBAS21LT1G FETURE • We declare that the material of product 3 compliance with RoHS requirements. 1 2 DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LBAS21LT1G JS 3000/Tape&Reel LBAS21LT3G
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LBAS21LT1G
3000/Tape
LBAS21LT3G
10000/Tape
236AB)
OT-23
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. High Voltage Switching Diode LBAS21LT1G FEATURE • We declare that the material of product 3 compliance with RoHS requirements. 1 2 DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LBAS21LT1G JS 3000/Tape&Reel LBAS21LT3G
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LBAS21LT1G
3000/Tape
LBAS21LT3G
10000/Tape
OT-23
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spice germanium diode
Abstract: SNW-EQ-611 PXTA14 sot89 JB TRANSISTOR SMD letter CODE PACKAGE SOT23 BSP15 BSP19 BST60 germanium transistor pnp MDA100
Text: GENERAL Page Quality 2 Pro Electron type numbering system 2 Rating systems 3 Letter symbols 4 S-parameter definitions 7 Equivalent package designators 8 Transistor ratings 8 Thermal considerations 11 Power derating curves for SMDs Power derating curve for SOT23
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OT143
SC-59
SC-70
SC-88
SC-75
OT223
BD839.
O-202
spice germanium diode
SNW-EQ-611
PXTA14
sot89 JB
TRANSISTOR SMD letter CODE PACKAGE SOT23
BSP15
BSP19
BST60
germanium transistor pnp
MDA100
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Untitled
Abstract: No abstract text available
Text: PJSLC05 SERIES ULTRA LOW CAPACITANCE SINGLE TVS FOR HIGH SPEED DATA LINES This Transient Voltage Suppressor is intended to Protect Sensitive Equipment against Electrostatic Discharge and Transient Events as well to offer a Miminum insertion loss in high speed data communication transmission line ports used in Portable Consumer,Computing
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PJSLC05
IEC61000-4-2
IEC61000-4-5
OT-23,
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Thermal considerations for SOT89
Abstract: BD136 BD226 BDX35
Text: Philips Semiconductors Thermal Impedance Curves General THERMAL IMPEDANCE CURVES Transistor thermal impedance curves for various packages and duty cycles are shown in Figures 1 to 23 inclusive. MGL193 103 handbook, full pagewidth Zth j-a δ=1 0.75 0.5 (K/W)
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MGL193
MGG837
OT416
SC-75)
MGL613
OT490
SC-89)
Thermal considerations for SOT89
BD136
BD226
BDX35
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sd1113 teledyne
Abstract: SD1112 2sd1102 sj 76a
Text: TELEDYNE COMPONENTS •. SÛE D . , , ■ ATlTbDB G0Gb4Gla T ■ — . T-29-25 T F l CD II^ JsÆ \ ^ Z, SD1102, SD1112, SEMICONDUCTOR S D 1113 N-CHANNEL ENHANCEMENT-MODE HIGH-VOLTAGE D-MOS POWER FETs ORDERING INFORMATION
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T-29-25
SD1102,
SD1112,
O-206AA
O-205AF
TQ-226AA
SD1102CHP
SD1102DD
SDH02HD
SD1102BD
sd1113 teledyne
SD1112
2sd1102
sj 76a
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Untitled
Abstract: No abstract text available
Text: DUAL SUPPLY VOLTAGE MONITOR ZSMD5333 ISSUE 1 - NOVEMBER 1995 DEVICE DESCRIPTION FEATURES The ZSMD5333 js a dual three terminal under voltage monitor for use in microprocessor systems. The device is designed to monitor both 5 volt and 3.3 volt supplies containing two
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ZSMD5333
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IRF621
Abstract: IRF620
Text: ZETEX SEMICONDUCTORS *JS]> D •=1=170570 OOOSSbS 3 ■ 95D 0 5 5 6 5 3 ^* 7/ IRF620 IRF621 IRF622 IRF623 N-channel enhancement mode vertical DMOS FET FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability
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IRF620
IRF621
IRF622
IRF623
O-220
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Untitled
Abstract: No abstract text available
Text: jp f 'js E I X / I T E O H 5mA CAPLESS CHARGE PUMP SC1460 Today’s Results.Tor PRELIMINARY-July 6, 1999 TEL805-498-2111 FAX:805-498-3804 WEB:http://www.semtech.com DESCRIPTION The SC1460 is a versatile charge pump designed for use in battery operated power supply applications re
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SC1460
TEL805-498-2111
SC1460
OT-23-3L
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4392
Abstract: 2N4393 2N4391 marking 18w sot23 18W SOT23 PN4391 SST4391 SST4392 SST4393 SOT23 MARKING N03
Text: Colo^ÎC N-Channel JFET Switch CORPORATION \J 2N4391 - 2N4393/PN4391 - PN4393/SST4391 - SST4393 A B S O L U T E MAXIMUM RATINGS FEATURES Ta = 25°C unless otherwise noted • r<js(on)<300 O h m s (2N4391) • G ate-Source or Gate-Drain V o lt a g e . -40V
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2N4391
-2N4393/
PN4391
PN4393/SST4391
SST4393
2N4391)
100pA
OT-23)
SST4391
SST4392
4392
2N4393
marking 18w sot23
18W SOT23
SST4393
SOT23 MARKING N03
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LB 122
Abstract: sc 1365 MPS571 MPS571B LB122
Text: 1SE D | MOTOROLA MQ TO R C LA fc>3b72SM SC b | XSTRS/R F T -2 1 -JS "“ • SEM ICOND UCTOR TECHNICAL DATA _ MPS571 MMBR571 The RF Line N P N Silicon High Frequency Transistors LOW N O ISE HIGH RF GA IN . designed for low noise, wide dynamic range front-end amplifiers and low-noise
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3b72SM
MPS571
MMBR571
O-226AA
A/500
LB 122
sc 1365
MPS571B
LB122
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MAX4180ESA
Abstract: No abstract text available
Text: , 19-1221; Rev 1; 8/97 Single/Dual/Quad 270M H z, 1mA, SOT23, C urrent-Feedback Am plifiers w ith Shutdown The M A X 4 1 8 0 -M A X 4 1 87 fe a tu re 0 .0 8 % /0 .03 ° d iffe re n tial gain and phase errors, a 20ns settling tim e to 0.1% , and a 45 0 V/|js slew rate, m aking th e m ideal fo r highp e r f o r m a n c e v id e o a p p lic a t io n s . T h e M A X 4 1 8 0 /
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4181/M
4183/M
SDT23,
MAX4180ESA
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smd transistor js
Abstract: smd transistor gs f BSH102 smd transistor 608
Text: Product specification Philips Semiconductors N-channel enhancement mode MOS transistor BSH102 FEATURES PINNING - SOT23 • Very low threshold PIN SYMBOL • High-speed switching 1 • No secondary breakdown 2 g s DESCRIPTION source • Direct interface to C-MOS, TTL etc.
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BSH102
smd transistor js
smd transistor gs f
BSH102
smd transistor 608
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transistor npn d 2058
Abstract: PBR941 UHF transistor GHz K 2058 transistor AA 9943 MDA871
Text: Philips Semiconductors Product specification UHF wideband transistor PBR941 PINNING - SOT23 FEATURES • Small size PIN DESCRIPTION • Low noise 1 base • Low distortion 2 emitter • High gain 3 collector • Gold metallization ensures excellent reliability.
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PBR941
transistor npn d 2058
PBR941
UHF transistor GHz
K 2058 transistor
AA 9943
MDA871
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MARKING W2 SOT23 TRANSISTOR
Abstract: PBR951 C 2577 transistor B 1566 Transistor UHF transistor GHz Transistor B 1566 top marking Z0 sot23 F 9016 transistor 9016 transistor specification FF402
Text: Philips Semiconductors Product specification UHF wideband transistor PBR951 FEATURES PINNING - SOT23 • Small size PIN DESCRIPTION • Low noise 1 base • Low distortion 2 emitter • High gain 3 collector • Gold metallization ensures excellent reliability.
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PBR951
MARKING W2 SOT23 TRANSISTOR
PBR951
C 2577 transistor
B 1566 Transistor
UHF transistor GHz
Transistor B 1566
top marking Z0 sot23
F 9016 transistor
9016 transistor specification
FF402
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Untitled
Abstract: No abstract text available
Text: 19-1089; Rev 2; 8/97 Single/Dual/Quad, W ide-Bandwidth, Low-Power, Single-Supply, Rail-to-Rail I/O Op Amps F e a tu re s ♦ 5-Pin SOT23-5 Package MAX4130 With their rail-to-rail inp ut co m m on-m ode range and output swing, the M AX4130-M AX4134 are ideal for lowvoltage, single-supply operation. Although the minimum
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OT23-5
MAX4130)
AX4130-M
AX4134
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RD SOT23
Abstract: FLLD258
Text: SOT23 SILICON PLANAR LOW LEAKAGE COMMON ANODE DIODE PAIR ISSUE 2 - JANUARY 1996 FLLD263 O 3 SOT23_ PART M AR KIN G DETAIL - D63 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL. R e p e titiv e Peak Reverse V o lta g e A v e ra g e R e c tifie d F o rw a rd C u rre n t
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FLLD263
-200m
FLLD258
FLLD261
RD SOT23
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Untitled
Abstract: No abstract text available
Text: FMMTA12 FMMTA13 FMMTA14 SOT23 NPN SILICON PLANAR DARLINGTON TRANSISTORS ISSUE 3 - OCTOBER 1995 CO M PLEM EN TARY TYPES - F M M TA 12 - NONE F M M TA 13 - F M M TA 63 F M M TA 14 - FM M TA 64 PARTM ARKING DETAILS - FM M TA 12 - 3W FM M TA 13 - 1M F M M T A 1 4 - 1N
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FMMTA12
FMMTA13
FMMTA14
FMMTA12
FMMTA13/14
A13/14
fr10V.
lc----10mA.
100mA,
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marking code CM
Abstract: No abstract text available
Text: Central CMPS5061 CMPS5062 CMPS5063 CMPS5064 S e m ic o n d u c to r Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPS5061 Series types are epoxy molded PNPN Silicon Controlled Rectifiers manufactured in an SOT23 case, designed for control systems and sensing circuit applications.
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CMPS5061
CMPS5062
CMPS5063
CMPS5064
marking code CM
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L-442
Abstract: l43d L442
Text: SOT23 SILICON EPITAXIAL SOHOTTKY BARRIER DIODES ISSUE 1 - SEPTEMBER 1995 , 1 o c r ic c I ' O 1 A i f 2 3 t 3 \ 2 3 2 BAT54 BAT54A BAT54S BAT54C SINGLE COMMON ANODE SERIES COMMON CATHODE Pin Configuration L4Z L42 L44 L43 Partmarking Detail D evice T ype FEATURES: Low VF & High Current Capability
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BAT54
BAT54A
BAT54S
BAT54C
100mA
L-442
l43d
L442
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Untitled
Abstract: No abstract text available
Text: BAS 19 BAS20 BAS21 SOT23 SILICON PLANAR HIGH SPEED SWITCHING DIODES PIN CONFIGURATION P A R T M A R K IN G D E TA ILS A BAS19 A8 B A S 2 0 . A 8 1 B A S 2 1 .A 8 2 3 ABSOLUTE M A X IM U M RATINGS PARAMETER SYM BO L C ontin uou s Reverse V oltag e
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BAS20
BAS21
BAS19
8AS21
17GS7fi
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