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    JS SOT23 Search Results

    JS SOT23 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    ISL54103IHZ-T7A Renesas Electronics Corporation DDC Accelerator (DDCA), SOT23, /Reel Visit Renesas Electronics Corporation
    EL6204CWZ-T7A Renesas Electronics Corporation Laser Driver Oscillator, SOT23, /Reel Visit Renesas Electronics Corporation
    ISL54103IHZ-T7 Renesas Electronics Corporation DDC Accelerator (DDCA), SOT23, /Reel Visit Renesas Electronics Corporation
    ISL21070CIH320Z-TK Renesas Electronics Corporation 25µA Micropower Voltage References, SOT23, /Reel Visit Renesas Electronics Corporation

    JS SOT23 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    JS SOT23-3

    Abstract: sot23 marking JR BAS20LT1 BAS21 BAS21DW5T1 BAS21LT1 BAS19 BAS19LT1 BAS20 MARKING JS sot-23
    Text: BAS19LT1, BAS20LT1, BAS21LT1, BAS21DW5T1 Preferred Devices High Voltage Switching Diode Device Marking: • BAS19LT1 = JP • BAS20LT1 = JR • BAS21LT1 = JS • BAS21DW5T1 = JS http://onsemi.com HIGH VOLTAGE SWITCHING DIODE SOT-23 3 CATHODE 1 ANODE SC-88A


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    PDF BAS19LT1, BAS20LT1, BAS21LT1, BAS21DW5T1 BAS19LT1 BAS20LT1 BAS21LT1 OT-23 SC-88A JS SOT23-3 sot23 marking JR BAS20LT1 BAS21 BAS21DW5T1 BAS21LT1 BAS19 BAS19LT1 BAS20 MARKING JS sot-23

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. HIGH VOLTAGE SWITCHING DIODE LBAS21HT1G 1 • Device Marking: JS 1 CATHODE • 2 ANODE 2 CASE 477, STYLE 1 SOD– 323 Pb-Free Package is Available. Ordering Information MARKING DIAGRAM Device Marking Shipping LBAS21HT1G JS 3000/Tape&Reel


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    PDF LBAS21HT1G 3000/Tape LBAS21HT3G 10000/Tape

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    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Diodes BAS21/A/C/SLT1 SOT—23 SWITCHING DIODE FEATURES BAS21LT1 Marking: JS BAS21ALT1 Marking: JS2 Reverse breakdown voltage Reverse voltage Forward Diode leakage current voltage


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    PDF OT-23 BAS21/A/C/SLT1 BAS21LT1 BAS21ALT1 BAS21CLT1 037TPY 950TPY 550REF 022REF

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. High Voltage Switching Diode LBAS21LT1G FETURE • We declare that the material of product 3 compliance with RoHS requirements. 1 2 DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LBAS21LT1G JS 3000/Tape&Reel LBAS21LT3G


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    PDF LBAS21LT1G 3000/Tape LBAS21LT3G 10000/Tape 236AB) OT-23

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. High Voltage Switching Diode LBAS21LT1G FEATURE • We declare that the material of product 3 compliance with RoHS requirements. 1 2 DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LBAS21LT1G JS 3000/Tape&Reel LBAS21LT3G


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    PDF LBAS21LT1G 3000/Tape LBAS21LT3G 10000/Tape OT-23

    spice germanium diode

    Abstract: SNW-EQ-611 PXTA14 sot89 JB TRANSISTOR SMD letter CODE PACKAGE SOT23 BSP15 BSP19 BST60 germanium transistor pnp MDA100
    Text: GENERAL Page Quality 2 Pro Electron type numbering system 2 Rating systems 3 Letter symbols 4 S-parameter definitions 7 Equivalent package designators 8 Transistor ratings 8 Thermal considerations 11 Power derating curves for SMDs Power derating curve for SOT23


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    PDF OT143 SC-59 SC-70 SC-88 SC-75 OT223 BD839. O-202 spice germanium diode SNW-EQ-611 PXTA14 sot89 JB TRANSISTOR SMD letter CODE PACKAGE SOT23 BSP15 BSP19 BST60 germanium transistor pnp MDA100

    Untitled

    Abstract: No abstract text available
    Text: PJSLC05 SERIES ULTRA LOW CAPACITANCE SINGLE TVS FOR HIGH SPEED DATA LINES This Transient Voltage Suppressor is intended to Protect Sensitive Equipment against Electrostatic Discharge and Transient Events as well to offer a Miminum insertion loss in high speed data communication transmission line ports used in Portable Consumer,Computing


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    PDF PJSLC05 IEC61000-4-2 IEC61000-4-5 OT-23,

    Thermal considerations for SOT89

    Abstract: BD136 BD226 BDX35
    Text: Philips Semiconductors Thermal Impedance Curves General THERMAL IMPEDANCE CURVES Transistor thermal impedance curves for various packages and duty cycles are shown in Figures 1 to 23 inclusive. MGL193 103 handbook, full pagewidth Zth j-a δ=1 0.75 0.5 (K/W)


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    PDF MGL193 MGG837 OT416 SC-75) MGL613 OT490 SC-89) Thermal considerations for SOT89 BD136 BD226 BDX35

    sd1113 teledyne

    Abstract: SD1112 2sd1102 sj 76a
    Text: TELEDYNE COMPONENTS •. SÛE D . , , ■ ATlTbDB G0Gb4Gla T ■ — . T-29-25 T F l CD II^ JsÆ \ ^ Z, SD1102, SD1112, SEMICONDUCTOR S D 1113 N-CHANNEL ENHANCEMENT-MODE HIGH-VOLTAGE D-MOS POWER FETs ORDERING INFORMATION


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    PDF T-29-25 SD1102, SD1112, O-206AA O-205AF TQ-226AA SD1102CHP SD1102DD SDH02HD SD1102BD sd1113 teledyne SD1112 2sd1102 sj 76a

    Untitled

    Abstract: No abstract text available
    Text: DUAL SUPPLY VOLTAGE MONITOR ZSMD5333 ISSUE 1 - NOVEMBER 1995 DEVICE DESCRIPTION FEATURES The ZSMD5333 js a dual three terminal under voltage monitor for use in microprocessor systems. The device is designed to monitor both 5 volt and 3.3 volt supplies containing two


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    PDF ZSMD5333

    IRF621

    Abstract: IRF620
    Text: ZETEX SEMICONDUCTORS *JS]> D •=1=170570 OOOSSbS 3 ■ 95D 0 5 5 6 5 3 ^* 7/ IRF620 IRF621 IRF622 IRF623 N-channel enhancement mode vertical DMOS FET FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability


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    PDF IRF620 IRF621 IRF622 IRF623 O-220

    Untitled

    Abstract: No abstract text available
    Text: jp f 'js E I X / I T E O H 5mA CAPLESS CHARGE PUMP SC1460 Today’s Results.Tor PRELIMINARY-July 6, 1999 TEL805-498-2111 FAX:805-498-3804 WEB:http://www.semtech.com DESCRIPTION The SC1460 is a versatile charge pump designed for use in battery operated power supply applications re­


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    PDF SC1460 TEL805-498-2111 SC1460 OT-23-3L

    4392

    Abstract: 2N4393 2N4391 marking 18w sot23 18W SOT23 PN4391 SST4391 SST4392 SST4393 SOT23 MARKING N03
    Text: Colo^ÎC N-Channel JFET Switch CORPORATION \J 2N4391 - 2N4393/PN4391 - PN4393/SST4391 - SST4393 A B S O L U T E MAXIMUM RATINGS FEATURES Ta = 25°C unless otherwise noted • r<js(on)<300 O h m s (2N4391) • G ate-Source or Gate-Drain V o lt a g e . -40V


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    PDF 2N4391 -2N4393/ PN4391 PN4393/SST4391 SST4393 2N4391) 100pA OT-23) SST4391 SST4392 4392 2N4393 marking 18w sot23 18W SOT23 SST4393 SOT23 MARKING N03

    LB 122

    Abstract: sc 1365 MPS571 MPS571B LB122
    Text: 1SE D | MOTOROLA MQ TO R C LA fc>3b72SM SC b | XSTRS/R F T -2 1 -JS "“ • SEM ICOND UCTOR TECHNICAL DATA _ MPS571 MMBR571 The RF Line N P N Silicon High Frequency Transistors LOW N O ISE HIGH RF GA IN . designed for low noise, wide dynamic range front-end amplifiers and low-noise


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    PDF 3b72SM MPS571 MMBR571 O-226AA A/500 LB 122 sc 1365 MPS571B LB122

    MAX4180ESA

    Abstract: No abstract text available
    Text: , 19-1221; Rev 1; 8/97 Single/Dual/Quad 270M H z, 1mA, SOT23, C urrent-Feedback Am plifiers w ith Shutdown The M A X 4 1 8 0 -M A X 4 1 87 fe a tu re 0 .0 8 % /0 .03 ° d iffe re n ­ tial gain and phase errors, a 20ns settling tim e to 0.1% , and a 45 0 V/|js slew rate, m aking th e m ideal fo r highp e r f o r m a n c e v id e o a p p lic a t io n s . T h e M A X 4 1 8 0 /


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    PDF 4181/M 4183/M SDT23, MAX4180ESA

    smd transistor js

    Abstract: smd transistor gs f BSH102 smd transistor 608
    Text: Product specification Philips Semiconductors N-channel enhancement mode MOS transistor BSH102 FEATURES PINNING - SOT23 • Very low threshold PIN SYMBOL • High-speed switching 1 • No secondary breakdown 2 g s DESCRIPTION source • Direct interface to C-MOS, TTL etc.


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    PDF BSH102 smd transistor js smd transistor gs f BSH102 smd transistor 608

    transistor npn d 2058

    Abstract: PBR941 UHF transistor GHz K 2058 transistor AA 9943 MDA871
    Text: Philips Semiconductors Product specification UHF wideband transistor PBR941 PINNING - SOT23 FEATURES • Small size PIN DESCRIPTION • Low noise 1 base • Low distortion 2 emitter • High gain 3 collector • Gold metallization ensures excellent reliability.


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    PDF PBR941 transistor npn d 2058 PBR941 UHF transistor GHz K 2058 transistor AA 9943 MDA871

    MARKING W2 SOT23 TRANSISTOR

    Abstract: PBR951 C 2577 transistor B 1566 Transistor UHF transistor GHz Transistor B 1566 top marking Z0 sot23 F 9016 transistor 9016 transistor specification FF402
    Text: Philips Semiconductors Product specification UHF wideband transistor PBR951 FEATURES PINNING - SOT23 • Small size PIN DESCRIPTION • Low noise 1 base • Low distortion 2 emitter • High gain 3 collector • Gold metallization ensures excellent reliability.


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    PDF PBR951 MARKING W2 SOT23 TRANSISTOR PBR951 C 2577 transistor B 1566 Transistor UHF transistor GHz Transistor B 1566 top marking Z0 sot23 F 9016 transistor 9016 transistor specification FF402

    Untitled

    Abstract: No abstract text available
    Text: 19-1089; Rev 2; 8/97 Single/Dual/Quad, W ide-Bandwidth, Low-Power, Single-Supply, Rail-to-Rail I/O Op Amps F e a tu re s ♦ 5-Pin SOT23-5 Package MAX4130 With their rail-to-rail inp ut co m m on-m ode range and output swing, the M AX4130-M AX4134 are ideal for lowvoltage, single-supply operation. Although the minimum


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    PDF OT23-5 MAX4130) AX4130-M AX4134

    RD SOT23

    Abstract: FLLD258
    Text: SOT23 SILICON PLANAR LOW LEAKAGE COMMON ANODE DIODE PAIR ISSUE 2 - JANUARY 1996 FLLD263 O 3 SOT23_ PART M AR KIN G DETAIL - D63 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL. R e p e titiv e Peak Reverse V o lta g e A v e ra g e R e c tifie d F o rw a rd C u rre n t


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    PDF FLLD263 -200m FLLD258 FLLD261 RD SOT23

    Untitled

    Abstract: No abstract text available
    Text: FMMTA12 FMMTA13 FMMTA14 SOT23 NPN SILICON PLANAR DARLINGTON TRANSISTORS ISSUE 3 - OCTOBER 1995 CO M PLEM EN TARY TYPES - F M M TA 12 - NONE F M M TA 13 - F M M TA 63 F M M TA 14 - FM M TA 64 PARTM ARKING DETAILS - FM M TA 12 - 3W FM M TA 13 - 1M F M M T A 1 4 - 1N


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    PDF FMMTA12 FMMTA13 FMMTA14 FMMTA12 FMMTA13/14 A13/14 fr10V. lc----10mA. 100mA,

    marking code CM

    Abstract: No abstract text available
    Text: Central CMPS5061 CMPS5062 CMPS5063 CMPS5064 S e m ic o n d u c to r Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPS5061 Series types are epoxy molded PNPN Silicon Controlled Rectifiers manufactured in an SOT23 case, designed for control systems and sensing circuit applications.


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    PDF CMPS5061 CMPS5062 CMPS5063 CMPS5064 marking code CM

    L-442

    Abstract: l43d L442
    Text: SOT23 SILICON EPITAXIAL SOHOTTKY BARRIER DIODES ISSUE 1 - SEPTEMBER 1995 , 1 o c r ic c I ' O 1 A i f 2 3 t 3 \ 2 3 2 BAT54 BAT54A BAT54S BAT54C SINGLE COMMON ANODE SERIES COMMON CATHODE Pin Configuration L4Z L42 L44 L43 Partmarking Detail D evice T ype FEATURES: Low VF & High Current Capability


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    PDF BAT54 BAT54A BAT54S BAT54C 100mA L-442 l43d L442

    Untitled

    Abstract: No abstract text available
    Text: BAS 19 BAS20 BAS21 SOT23 SILICON PLANAR HIGH SPEED SWITCHING DIODES PIN CONFIGURATION P A R T M A R K IN G D E TA ILS A BAS19 A8 B A S 2 0 . A 8 1 B A S 2 1 .A 8 2 3 ABSOLUTE M A X IM U M RATINGS PARAMETER SYM BO L C ontin uou s Reverse V oltag e


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    PDF BAS20 BAS21 BAS19 8AS21 17GS7fi